Assembly Site Expansion for 1.2um IDR PLCC 52/68 from NXP-ATKL to ATP1

Transcription

1 5/7/2018 epcn Print: Final Product Change Notification F01 Final Product Change Notification F01 Issue Date: Effective Date: Dear Product Data, 09-May Aug-2018 Here's your personalized quality information concerning products Mouser Electronics purchased from NXP. For detailed information we invite you to view this notification online Change Category Wafer Fab Process Assembly Process Wafer Fab Assembly Materials Materials Wafer Fab Assembly Location Location Firmware Other Product Marking Test Location Design Mechanical Specification Test Process Errata Test Electrical spec./test Packing/Shipping/Labeling Equipment coverage Assembly Site Expansion for 1.2um IDR PLCC 52/68 from NXP-ATKL to ATP1 Description of Change NXP Semiconductors announces the Assembly site expansion for the IDR technology on the PLCC68 and PLCC52 associated with this notification from the current NXP-ATKL, Kuala Lumpur, Malaysia assembly facility to the Amkor Technology Philippines (ATP1), Muntinlupa, Philippines assembly facility. The change in assembly site also include change in mold compound, die attach, Au wire diameter and lead frame paddle size. A CofDC comparison is attached to this notification to provide detailed comparisons between the bill of materials. Assembly site expansion was successfully qualified adhering to NXP specifications. Corresponding ZVEI Delta Qualification Matrix ID: SEM-PA-03, SEM-PA-07, SEM-PA-08, SEM-PA-11 and SEM-PA- 18. Please see attached files for additional details. Reason for Change Qualification of the Amkor Technology Philippines (ATP1), Muntinlupa, Philippines assembly facility is required for manufacturing flexibility and customer supply assurance. Identification of Affected Products There is no change to orderable part number. Change in package trace code is explained under the 'Remarks' section below. Product Availability Sample Information Samples are available from 13-Jul-2018 Qualified samples part numbers KC11F1CFNE3/KC11E1CFNE2/KC705C8AFNE from ATP1 material will be provided upon request. 1/2

2 5/7/2018 epcn Print: Final Product Change Notification F01 Production Planned first shipment 29-Jun-2018 Anticipated Impact on Form, Fit, Function, Reliability or Quality There is no change to product form, fit, function, or reliability. Disposition of Old Products Assembly site expansion. No Depletion of Inventory required. Customer may receive products assembled from either site after Effective Date. Additional information Self qualification: view online Additional documents: view online Timing and Logistics In compliance with JEDEC J-STD-046, your acknowledgement of this change is expected by 08-Jun Remarks The assembly site is reflected in the package trace code. The format for the NXP standard trace code: PLCC 52/68: AWLYYWWZ or ATWLYYWWZ A=Assembly Location, T=Test Location, WL=Wafer Lot, YYWW=Date Code, Z =Assembly Lot Split, The marking for NXP-ATKL is A=Q. The marking for ATP1 is A=ZR. Contact and Support For all inquiries regarding the epcn tool application or access issues, please contact NXP "Global Quality Support Team". For all Quality Notification content inquiries, please contact your local NXP Sales Support team. For specific questions on this notice or the products affected please contact our specialist directly: Name P.J Chen Position Product Engineer address pinjiao.chen@nxp.com At NXP Semiconductors we are constantly striving to improve our product and processes to ensure they reach the highest possible Quality Standards. Customer Focus, Passion to Win. NXP Quality Management Team. About NXP Semiconductors NXP Semiconductors N.V. (NASDAQ: NXPI) provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. These innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. NXP Semiconductors High Tech Campus, 5656 AG Eindhoven, The Netherlands NXP Semiconductors. All rights reserved. 2/2

3 Objective: AEC-Q100H Automotive Tier Qual NXP-ATKL Assembly Site Transfer to ATP1 For PLCC Package with Au Wire Qualification NXP PN: MCHC11F1 & HC711E20 Customer Name(s): Various Part Name: PN(s): Various Revision: O Technology: I120JXXS / 1200nm 60%IDRNVM Package: I120EJXS / 1200nm 60%IDRNVM 0803 / PLCC / PLCC 52 Design Engineer: Not Applicable Revision Date: See below revision history Fab / Assembly/ NXP-CHD-FAB / ATP1 / NXP-ATKL Final Test Sites: Maskset#: M88Y & M07Z Rev#: 0 Product Engineer: P.J Chen QUARTZ Tracking #: & Package Engineer: Jasmine Lim CAB Approval M Number & Date: 30-Mar-2018 Die Size (in mm) x W x L x R&QA Engineer: Chew Kim Seong Customer Approval Signature & Date: NA Datasheet Operating AEC Grade = 1 Temp Temp Range = - 40 C to C Ambient. Trace/DateCode: LOT A XE528C4L00 (PLCC68) LOT B XE528C4K00 (PLCC68) LOT C 8EXE542C1Y00 (PLCC52) TESTS HIGHLIGHTED IN YELLOW ARE PERFORMED FOR THIS STUDY This testing is performed by NXP Reliability Lab (ATKL) unless otherwise noted in the Comments. Qual Vehicle A MCHC11F1 Maskset: 0M88Y Fab/Tech: NXP-CHD-FAB / I120JXXS Final Test Site: NXP-ATKL Die size: x mm Package: PLCC 68 Part Operating Temperature: -40 C to 125 C Quartz# Qual Vehicle B HC711E20 Maskset: 0M07Z Fab/Tech: NXP-CHD-FAB / I120EJXS Final Test Site: NXP-ATKL Die size: x mm Package: PLCC 52 Part Operating Temperature: -40 C to 125 C Quartz# Stress Test Reference Test Conditions Preconditioning (PC) : PC A113 PC required for SMDs only. J-STD-020 MSL 250 C, +5/-0 C Highly Accelerated Stress Test (HAST): A110 (HAST) PC before HAST (for SMDs only): Required HAST = 130 C/85%RH for 96hrs HAST Bias = Max Vdd GROUP A - ACCELERATED ENVIRONMENTAL STRESS TESTS End Point Minimum Sample Minimum # of Lots including Lot ID-(#Rej/SS) # of Lots including Lot ID-(#Rej/SS) Requirements Size Sample Size RH All surface mount devices prior to HAST, UHST, TC, and as Lot A: 0/154 All surface mount devices prior to HAST, UHST, Lot A: 0/154 required per test conditions. Lot B: 0/154 TC and as required per test conditions. RH Pass Generic Data: PASS Generic Data: MC68HC711K4, (0N78E), 84PLCC, ATP1, Q215518: 0/77 MC68HC711K4, (0N78E), 84PLCC, ATP1, Q215518: 0/77 MC711K4VFNE4, (1K59D), 84PLCC, ATP1, Q : 0/77 MC711K4VFNE4, (1K59D), 84PLCC, ATP1, Q : 0/77 MC68HC11K1, (1D58N), 84PLCC, ATP1, Q : 0/77 MC68HC11K1, (1D58N), 84PLCC, ATP1, Q : 0/77 A118 (uhast) Unbiased HAST (UHST): PC before UHST (for SMDs only): Required UHST = 130 C/85%RH for 96hrs R Lot A: 0/77 Lot B: 0/77 Generic Data: AC = 121 C/100%RH/15 psig for 96hrs MC68HC711K4, (0N78E), 84PLCC, ATP1, Q215518: 0/ Lot A: 0/77 Generic Data: AC = 121 C/100%RH/15 psig for 96hrs MC68HC711K4, (0N78E), 84PLCC, ATP1, Q215518: 0/77 UHST MC711K4VFNE4,(1K59D), 84PLCC, ATP1, Q : 0/77 MC68HC11K1, (1D58N), 84PLCC, ATP1, Q : 0/77 MC711K4VFNE4, (1K59D), 84PLCC, ATP1, Q : 0/77 MC68HC11K1, (1D58N), 84PLCC, ATP1, Q : 0/77 TC HTSL A104 AEC Q100- Appendix 3 A103 Temperature Cycle (TC): H Lot A: 0/77 PC before TC (for SMDs only): Required For AEC: WBP =/> 3 WP: 0/5; min>3.0g TC = -65 C to 150 C for 500 cycles. grams Lot B: 0/77 For AEC: WBP after TC on 5 devices from 1 lot; 2 bonds WP: 0/5; min>3.0g per corner and one mid-bond per side on each device. Record which pins were used. High Temperature Storage Life (HTSL): RH Lot A: 0/ C for 1008 hrs Lot B: 0/ Lot A: 0/77 WP: 0/5; min>3.0g Lot A: 0/45 TEST GROUP B - ACCELERATED LIFETIME SIMULATION TESTS End Point Minimum Sample # of Lots including Lot ID-(#Rej/SS) Requirements Size RHC PASS Generic Data: MC68HC711K4, (0N78E), 84PLCC, Q215518: 0/77 Minimum # of Lots including Lot ID-(#Rej/SS) Sample Size Pass Generic Data: MC68HC711K4, (0N78E), 84PLCC, Q215518: 0/77 ELFR AEC Q Early Life Failure Rate (ELFR): AEC Ta = 125 C for 48 hrs Bias = Vddmax RH Lot A: 0/800 Generic Data: MC68HC711K4, (0N78E), 84PLCC, Q215518: 0/ Pass Generic Data: MC68HC711K4, (0N78E), 84PLCC, Q215518: 0/611 EDR AEC Q NVM Endurance, Data Retention, and Operational Life RHC Not required Not required (EDR): 150 C for 1008 hrs Devices incorporating NVM shall receive 1X 'NVM endurance preconditioning'(w/e cycling) at Ta = 125 C. Test R, H, C after W/E cycling. Stress Test Reference Test Conditions High Temperature Operating Life (HTOL): A108 AEC Ta = 125 C for 168 hrs HTOL Bias = Vddmax TEST GROUP C - PACKAGE ASSEMBLY INTEGRITY TESTS End Point Minimum Sample Stress Test Reference Test Conditions # of Lots including Lot ID-(#Rej/SS) Requirements Size AEC Q Wire Bond shear (WBS) Cpk = or > bonds 2 10 Lot A: Cpk>1.67 WBS from minimum 5 Lot B: Cpk>1.67 units MilStd883- Wire Bond Pull (WBP): Cpk = or > bonds 2 10 Lot A: Cpk>1.67 WBP 2011 Cond. C or D from minimum 5 Lot B: Cpk>1.67 units Solderability (SD): >95% lead coverage Lot A: Pass SD B102 If production burn-in is done, samples must also undergo of critical areas Lot B: Pass burn-in prior to SD. Physical Dimensions (PD): Cpk = or > Lot A: Cpk>1.67 PD B100 PD per NXP 98A drawing Lot B: Cpk>1.67 Minimum # of Lots including Lot ID-(#Rej/SS) Sample Size 30 bonds 1 5 Lot A: Cpk>1.67 from minimum 5 units 30 bonds 1 5 Lot A: Cpk>1.67 from minimum 5 units Lot A: Pass Lot A: Cpk>1.67 DIM & BOM Dimensional (DIM): GAO to verify PD results against valid 98A drawing. BOM Verification (BOM): GAO to verify qual lot ERF BOM is accurate. DIM: Pass BOM: Approved DIM: Pass BOM: Approved SBS AEC-Q Solder Ball Shear (SBS): Performed on all solder ball mounted packages e.g. PBGA, Chip Scale, Micro Lead Frame (but NOT Flip Chip). Two 220 C reflow cycles before shear. Cpk = or > (5 balls from a min. of 10 devices) 0 0 Not required 10 (5 balls from a min. of 10 devices) 0 0 Not required LI B105 Lead Integrity (LI): Not required for surface mount devices; Only required for through-hole devices. No lead breakage or 5 cracks (10 leads from each of 5 parts) 0 0 Not required 5 (10 leads from each of 5 parts) 0 0 Not required

4 Stress Test Reference Test Conditions NXP 48A Pre- and Post Functional / Parametrics (TEST): For AEC, test software shall meet requirements of AEC- Q TEST Testing performed to the limits of device specification in temperature and limit value. TEST GROUP E - ELECTRICAL VERIFICATION TESTS End Point Minimum Sample Minimum # of Lots including Lot ID-(#Rej/SS) # of Lots including Lot ID-(#Rej/SS) Requirements Size Sample Size 0 Fails All All All See This action refers to Final Testing of all qualification units. All All All See Summary This action refers to Final Testing of all qualification units. Summary HBM AEC-Q / A114E Jan 2007 ElectroStatic Discharge/ Human Body Model Classification (HBM): 500/1000/1500/2000 Volts For AEC, see AEC-Q for classification levels. RH 2KV min. 3 units per Voltage level 0 0 Not required 3 units per Voltage level 0 0 Not required CDM AEC-Q ElectroStatic Discharge/ Charged Device Model Classification (CDM): 250/500/750 Volts For AEC, see AEC-Q for classification levels. Timed RO of 96hrs MAX. RH 3 units per Voltage All pins =/> 500V level For AEC, Corner pins =/> 750V; 0 0 Not required 3 units per Voltage level 0 0 Not required LU JESD78 plus AEC-Q for AEC Latch-up (LU): Ta during stress = 125 C Vsupply = Maximum operating voltage May allow alternate condition as per JESD78 RH Not required Not required ED AEC-Q , NXP 48A spec Electrical Distribution (ED) RHC For AEC, Cpk target > Pass; Cpk>1.67 T0 comparison between ATP Au wire and KLM Au wire Not required FG For AEC, AEC-Q Fault Grading (FG) FG shall be = or > 90% for qual units FG%= No change FG%= No change EMC SAE J1752/3 - Radiated Emissions Electromagnetic Compatibility (EMC) <40dBuV (see AEC Q100 Appendix 5 for test applicability; done on 150kHz - 1GHz case-by-case basis per customer/nxp agreement) Not required Not required Bill of Material (BOM) of Qualification Vehicles: Quartz # Mask Set / Fabrication Site / Tech Product-Qual Description / Part Number(s) Die Size (mm) Assembly Site Package Type / Mold Compound Die Attach Epoxy Wire Type / Size CD Code PLCC M88Y / NXP-CHD-FAB / MCHC11F x ATP1 68 / 0803 Sumitomo G600 ABLESTICK 8361J 30.5um Au I120JXXS 0M07Z / NXP-CHD-FAB / HC711E x ATP1 PLCC52 / 0805 Sumitomo G600 ABLESTICK 8361J 30.5um Au I120EJXS Package Generic Data List: Quartz # Mask Set / Fabrication Site / Tech Product-Qual Description / Part Number(s) Die Size (mm) Assembly Site Package Type / Mold Compound Die Attach Epoxy Wire Type / Size CD Code Q K59D / TSC / I120EJXS MC711K4VFNE x ATP1 PLCC 84 / 0806 Sumitomo G600 ABLESTICK 8361J 30.5um Au Q D58N / TSC / I120EJXS MC68HC11K x ATP1 PLCC 84 / 0806 Sumitomo G600 ABLESTICK 8361J 30.5um Au Q N78E / NXP-CHD-FAB / I120EJXS MC68HC711K x ATP1 PLCC 84 / 0806 Sumitomo G600 ABLESTICK 8361J 30.5um Au Die Generic Data List: Quartz # Q Mask Set / Fabrication Site / Tech Product-Qual Description / Part Number(s) Die Size (mm) Assembly Site Package Type / Mold Compound Die Attach Epoxy Wire Type / Size CD Code 0N78E / NXP-CHD-FAB/ MC68HC711K x ATP1 PLCC 84 / 0806 Sumitomo G600 ABLESTICK 8361J 30.5um Au I120EJXS Devices Qualified By Similarity: Quartz # Mask Set / Fabrication Site / Tech Product-Qual Description / Part Number(s) Die Size (mm) Assembly Site Package Type / Mold Compound Die Attach Epoxy Wire Type / Size CD Code PLCC52 NA 0N20B / NXP-CHD-FAB / HC05B x ATP1 / 0805 Sumitomo G600 ABLESTICK 8361J 30.5um Au I120XXXS / NXP-CHD-FAB NA 0M28Z / HC11E x ATP1 PLCC52 / 0805 Sumitomo G600 ABLESTICK 8361J 30.5um Au I080JXXS / NXP-CHD-FAB NA 0M28Z / HC11E x ATP1 PLCC52 / 0805 Sumitomo G600 ABLESTICK 8361J 30.5um Au I080JXXS / NXP-CHD-FAB NA 0M28Z / HC11E x ATP1 PLCC52 / 0805 Sumitomo G600 ABLESTICK 8361J 30.5um Au I080JXXS Revision Date Comments Author Rev 0 12-March-2018 Qualification result update. Chew Kim Seong

5 COFDC SUMMARY FOR ATP1 ASSEMBLY SITE QUALIFICATION FOR PLCC PACKAGE WITH AU WIRE EXTERNAL USE

6 MC68HC05Bx (N20B) PLCC52 AEC Q100 Certification of Design, Construction and Qualification Q100base-revG; -001revC, -002revD, -003revE, -004revC, -005recC, -006revD, -007revA, -008revA, -009revB, -010revA, -011revB, -012Rev-. Supplier Name: NXP Semiconductor Date: 6 March 2018 Item Name Supplier Response (CHD/ATKL - AU) Supplier Response (CHD/ATP1 - AU) 1. User s Part Number: See PPAP See PPAP 2. Supplier s Part Number/Data Sheet: MC68HC05Bx MC68HC05Bx 3. Device Description: PLCC52 PLCC52 6. Assembly Location & Process ID: a. Facility name/plant #: NXP-ATKL ATP1 b. Street address: Available upon request KM 22 East Service Road Special Economic Zone Cupang, Muntinlupa City 1771 c. Country: Malaysia Philippines 17. Die Attach: a. Die attach material ID: EPOXY ABLEBOND 8290 ABLESTICK 8361J b. Die attach method: Epoxy Epoxy c. Die placement diagram: Available upon request Available upon request 18. Package: a. Type of package (e.g. plastic, ceramic, unpackaged): Plastic Plastic b. Ball/lead count: 52 PLCC 52 PLCC c. JEDEC designation (e.g., MS029, MS034, etc.) Non JEDEC Non JEDEC d. Lead (Pb) free (<.1% homogenouse material) Yes Yes e. Package outline drawing See PPAP See PPAP 19. Mold Compound: a. Plastic mold compound supplier & ID: HITACHI GE1030FA SUMITOMO G600 b. Mold compound type: Epoxy resin Epoxy resin c. Flammability rating: UL 94 V0 UL 94 V0 d. Fire Retardant type/composition Multi aromatic resin system Multi aromatic resin system e. Tg (glass transition temperature) ( C): f. CTE (above & below Tg) (ppm/ C): 10/33 10/ Wire Bond: a. Wire bond material: Au Au b. Wire bond diameter (um): 32.5 Au 30.5 Au c. Type of wire bond at die: Ball bond Ball bond d. Type of wire bond at leadframe: Stitch bond Stitch bond e. Wire bonding diagram: Available upon request Available upon request 21. Leadframe (if applicable): a. Paddle/flag material: Cu Cu b. Paddle/flag width (mm): c. Paddle/flag length (mm): d. Paddle/flag plating composition: If plating is present, same as 21g If plating is present, same as 21g e. Paddle/flag plating thickness (µin): If plating is present, same as 21h If plating is present, same as 21h f. Leadframe material: Cu Cu g. Leadframe bonding plating composition: Ag Ag 1 h. Leadframe bonding plating thickness (um): i. External EXTERNAL lead plating USE composition: Sn Sn j. External lead plating thickness (um): Note: Yellow are changes between current NXP-ATKL against ATP1

7 MC68HC11E1 (M28Z) PLCC52 AEC Q100 Certification of Design, Construction and Qualification Q100base-revG; -001revC, -002revD, -003revE, -004revC, -005recC, -006revD, -007revA, -008revA, -009revB, -010revA, -011revB, -012Rev-. Supplier Name: NXP Semiconductor Date: 6 March 2018 Item Name Supplier Response (CHD/Au - ATKL) Supplier Response (CHD/Au ATP1) 1. User s Part Number: See PPAP See PPAP 2. Supplier s Part Number/Data Sheet: MC68HC11E1VFNE3R MC68HC11E1VFNE3 MC68HC11E1VFNE3R MC68HC11E1VFNE3 3. Device Description: HC11E1 HC11E1 6. Assembly Location & Process ID: a. Facility name/plant #: NXP-ATKL ATP1 KM 22 East Service Road b. Street address: Special Economic Zone No.2 Jalan SS 8/2; Petaling Jaya Selangor Malaysia Cupang, Muntinlupa City 1771 c. Country: Malaysia Philippines 17. Die Attach: a. Die attach material ID: EPOXY ABLEBOND 8290 ABLESTICK 8361J b. Die attach method: Epoxy Epoxy c. Die placement diagram: Available upon request Available upon request 18. Package: a. Type of package (e.g. plastic, ceramic, unpackaged): Plastic Plastic b. Ball/lead count: 52 PLCC 52 PLCC c. JEDEC designation (e.g., MS029, MS034, etc.) Non JEDEC Non JEDEC d. Lead (Pb) free (<.1% homogenouse material) Yes Yes e. Package outline drawing See PPAP See PPAP 19. Mold Compound: a. Plastic mold compound supplier & ID: HITACHI GE1030FA SUMITOMO G600 b. Mold compound type: Epoxy resin Epoxy resin c. Flammability rating: UL 94 V0 UL 94 V0 d. Fire Retardant type/composition Multi aromatic resin system Multi aromatic resin system e. Tg (glass transition temperature) ( C): f. CTE (above & below Tg) (ppm/ C): 10/33 10/ Wire Bond: a. Wire bond material: Au Au b. Wire bond diameter (um): 32.5 Au 30.5 Au c. Type of wire bond at die: Ball bond Ball bond d. Type of wire bond at leadframe: Stitch bond Stitch bond e. Wire bonding diagram: Available upon request Available upon request 21. Leadframe (if applicable): a. Paddle/flag material: Cu Cu b. Paddle/flag width (mm): c. Paddle/flag length (mm): d. Paddle/flag plating composition: If plating is present, same as 21g If plating is present, same as 21g e. Paddle/flag plating thickness (µin): If plating is present, same as 21h If plating is present, same as 21h f. Leadframe material: Cu Cu g. Leadframe bonding plating composition: Ag Ag 2 h. Leadframe bonding plating thickness (um): i. External EXTERNAL lead plating USE composition: Sn Sn j. External lead plating thickness (um): Note: Yellow are changes between current NXP-ATKL against ATP1

8 MC68HC11E20 (M07Z) PLCC52 AEC Q100 Certification of Design, Construction and Qualification Q100base-revG; -001revC, -002revD, -003revE, -004revC, -005recC, -006revD, -007revA, -008revA, -009revB, -010revA, -011revB, -012Rev-. Supplier Name: NXP Semiconductor Date: 6 March 2018 Item Name Supplier Response (CHD/Au KLM) Supplier Response (CHD/Au ATP1) 1. User s Part Number: See PPAP See PPAP 2. Supplier s Part Number/Data Sheet: MC68711E20CFNE4 S711E20E0VFNE2R S711E20E0VFNE2 3. Device Description: HC711E20 HC711E20 MC68711E20CFNE4 S711E20E0VFNE2R S711E20E0VFNE2 6. Assembly Location & Process ID: a. Facility name/plant #: NXP-ATKL ATP1 KM 22 East Service Road b. Street address: Special Economic Zone No.2 Jalan SS 8/2; Petaling Jaya Selangor Malaysia Cupang, Muntinlupa City 1771 c. Country: Malaysia Philippines 17. Die Attach: a. Die attach material ID: EPOXY ABLEBOND 8290 ABLESTICK 8361J b. Die attach method: Epoxy Epoxy c. Die placement diagram: Available upon request Available upon request 18. Package: a. Type of package (e.g. plastic, ceramic, unpackaged): Plastic Plastic b. Ball/lead count: 52 PLCC 52 PLCC c. JEDEC designation (e.g., MS029, MS034, etc.) Non JEDEC Non JEDEC d. Lead (Pb) free (<.1% homogenouse material) Yes Yes e. Package outline drawing See PPAP See PPAP 19. Mold Compound: a. Plastic mold compound supplier & ID: HITACHI GE1030FA SUMITOMO G600 b. Mold compound type: Epoxy resin Epoxy resin c. Flammability rating: UL 94 V0 UL 94 V0 d. Fire Retardant type/composition Multi aromatic resin system Multi aromatic resin system e. Tg (glass transition temperature) ( C): f. CTE (above & below Tg) (ppm/ C): 10/33 10/ Wire Bond: a. Wire bond material: Au Au b. Wire bond diameter (um): 32.5 Au 30.5 Au c. Type of wire bond at die: Ball bond Ball bond d. Type of wire bond at leadframe: Stitch bond Stitch bond e. Wire bonding diagram: Available upon request Available upon request 21. Leadframe (if applicable): a. Paddle/flag material: Cu Cu b. Paddle/flag width (mm): c. Paddle/flag length (mm): d. Paddle/flag plating composition: If plating is present, same as 21g If plating is present, same as 21g e. Paddle/flag plating thickness (µin): If plating is present, same as 21h If plating is present, same as 21h f. Leadframe material: Cu Cu g. Leadframe bonding plating composition: Ag Ag 3 h. Leadframe EXTERNAL bonding USE plating thickness (um): i. External lead plating composition: Sn Sn j. External lead plating thickness (um): Note: Yellow are changes between current NXP-ATKL against ATP1

9 MC68HC11F1 (M88Y) PLCC68 AEC Q100 Certification of Design, Construction and Qualification Q100base-revG; -001revC, -002revD, -003revE, -004revC, -005recC, -006revD, -007revA, -008revA, -009revB, -010revA, -011revB, -012Rev-. Supplier Name: NXP Semiconductor Date: 6 March 2018 Item Name Supplier Response (CHD/Au KLM) Supplier Response (CHD/AU ATP1) 1. User s Part Number: See PPAP See PPAP 2. Supplier s Part Number/Data Sheet: MCHC11F1VFNE4 MCHC11F1VFNE4R MCHC11F1VFNE4 MCHC11F1VFNE4R 3. Device Description: HC11F1 PLCC68 HC11F1 PLCC68 6. Assembly Location & Process ID: a. Facility name/plant #: NXP-ATKL ATP1 KM 22 East Service Road b. Street address: Special Economic Zone No.2 Jalan SS 8/2; Petaling Jaya Selangor Malaysia Cupang, Muntinlupa City 1771 c. Country: Malaysia Philippines 17. Die Attach: a. Die attach material ID: EPOXY ABLEBOND 8290 ABLESTICK 8361J b. Die attach method: Epoxy Epoxy c. Die placement diagram: Available upon request Available upon request 18. Package: a. Type of package (e.g. plastic, ceramic, unpackaged): Plastic Plastic b. Ball/lead count: 68 PLCC 68 PLCC c. JEDEC designation (e.g., MS029, MS034, etc.) Non JEDEC Non JEDEC d. Lead (Pb) free (<.1% homogenouse material) Yes Yes e. Package outline drawing See PPAP See PPAP 19. Mold Compound: a. Plastic mold compound supplier & ID: HITACHI GE1030FA SUMITOMO G600 b. Mold compound type: Epoxy resin Epoxy resin c. Flammability rating: UL 94 V0 UL 94 V0 d. Fire Retardant type/composition Multi aromatic resin system Multi aromatic resin system e. Tg (glass transition temperature) ( C): f. CTE (above & below Tg) (ppm/ C): 10/33 10/ Wire Bond: a. Wire bond material: Au Au b. Wire bond diameter (um): 32.5 Au 30.5 Au c. Type of wire bond at die: Ball bond Ball bond d. Type of wire bond at leadframe: Stitch bond Stitch bond e. Wire bonding diagram: Available upon request Available upon request 21. Leadframe (if applicable): a. Paddle/flag material: Cu Cu b. Paddle/flag width (mm): c. Paddle/flag length (mm): d. Paddle/flag plating composition: If plating is present, same as 21g If plating is present, same as 21g e. Paddle/flag plating thickness (µin): If plating is present, same as 21h If plating is present, same as 21h f. Leadframe material: Cu Cu g. Leadframe bonding plating composition: Ag Ag 4 h. Leadframe bonding plating thickness (um): EXTERNAL USE i. External lead plating composition: Sn Sn j. External lead plating thickness (um): Note: Yellow are changes between current NXP-ATKL against ATP1

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11 Assembly Site Expansion for 1.2um IDR PLCC52/68 from NXP- LI Worked on: ATKL to ATP1 (Name, Function) (P.J Chen, Product Engineer) Date: 22-Mar-18 Form provided by ZVEI - Revision December 2016 PCN number: F01 Signature: Chew Kim Seong For integrated circuits or discrete semiconductors select below: AEC-Q100 Revision H MATERIAL PERFORMANCE TEST RESULTS (on the basis of AEC-Q100 Revision H) includes integrated circuits (e.g. ASICs, µ-controler, memories, voltage regulators, smart power devices, logic devices, analog devices,... ) additional to AEC- Q10x Mark change with an "x" Remaining Assessment of impact on Supply Chain regarding following aspects risks on - contractual agreements Supply - technical interface of processability/manufacturability of customer Chain? - form, fit, function, quality performance, reliability ID Type of change No Yes Understanding of semiconductors experts Examples to explain A: Application level B: Boardlevel Evaluation level C: Component level A / B / C *: Not relevant for qualification matrix Further applicable conditions Line evaluation (can be evaluated by data or audit/on site check) AEC-Q100 Revision H Check of specification (for raw material only) Temperature Humidity Bias or biased HAST THB Autoclave or Unbiased HAST AC Temperature Cycling TC Power Temperature Cycling PTC High Temperature Storage Life HTSL High Temperature Operating Life HTOL Early Life Failure Rate ELFR NVM Endurance, Data Retention, and Operational Life EDR Wire Bond Shear WBS Wire Bond Pull WBP Solderability SD Physical Dimensions PD Solder Ball Shear SBS Lead Integrity Electromigration EM Time Depending Dielectric Breakdown TDDB Hot Carrier Injection HCI Negative Bias Temperature Instability NBTI Stress Migration SM Electronic Discharge Human Body Model HBM Electronic Discharge Charged Device Model CDM Latch up LU Electrical Distribution ED Characterisation CHAR Electromagnetic Compatibility EMC Short Circuit Characterization SC Soft Error Rate SER Lead free LF Hermetic Package Test MECH Package Drop DROP Lid Torque LT Die Shear DS Internal Water Vapor IWV Whisker test (IEC T2-82, JEDEC JESD201) Parameter-Analysis: Comparison of current with changed device characterization, electrical distribution Remarks Change in leadframe dimensions which has impact to the specified electrical parameter acc. data sheet or specification (e.g. heat sink, pin dimensions, die e. g. change in lead frame geometry B X SEM-PA-03 Change in leadframe dimensions P P paddle size,...) Not included: Variation within specification. ESD investigations are only necessary if internal ground and power supply connection of leadframe is affected. A: If impact on EMC behavior cannot be evaluated / excluded on component level. In case of Cu wire product please consider AEC-Q M L H Change of die attach material and / or process X SEM-PA-07 Die attach material P P resulting in a new technology (e.g. soft solder, epoxy, etc.) C A: If impact on EMC behavior cannot be evaluated / excluded on component level (if die attach has impact on electrical conductivity). In case of Cu wire product please consider AEC-Q M L H - - H H - X SEM-PA-08 Change of wire bonding P e.g. change from Au to Cu material Material, diameter, change in bonding diagram and / e.g. change from 25µm to 23µm diameter P or change in process resulting in a new technology. e.g. change from single to double bond e.g. change from stich bond to stich on ball bond. C A: In case of bond diagram change and EMC cannot be evaluated on component level. Please also check changes described under SEM-EQ-01. In case of Cu wire bonding please consider AEC-Q006. Q M H Parameter Analysis: Strictly required only for Power devices. In general: Site audit for material change with impact on bondprocess (e.g. from Au to Cu) recommended. AEC-Q100: "For broad changes that involve multiple attributes (e.g., site, materials, processes), refer to section A1.3 of this appendix and section 2.3 of Q100, which allows for the selection of worst-case test vehicles to cover all the possible permutations." X SEM-PA-11 Change of mold compound / encapsulation material P P Change of mold compound / encapsulation material. e.g. change to green mold compound e.g. change of filler particles B A: impact on thermo-mechanical stress caused by mismatch of mold compound, interconnecting technology and carrier is evident anticipated (specific for Power Devices). A: in case of high frequency signals (> 3GHz) it should be assessed if possible changes in permeability of mold compound could affect signal behavior (e.g. digital signal processor). - M L In case of Cu wire product please consider AEC-Q006. X SEM-PA-18 Move of all or part of assembly to a different location/site/subcontractor. P P Assembly transfer or relocation e.g. dual source / fab strategy C A or B: impact on other type of changes described under PROCESS ASSEMBLY and SEM-EQ-01. In case of Cu wire product please consider AEC-Q M - - T L H - - H H G Whisker tests have to be done on monitoring basis! AEC-Q100: "For broad changes that involve multiple attributes (e.g., site, materials, processes), refer to section A1.3 of this appendix and section 2.3 of Q100, which allows for the selection of worst-case test vehicles to cover all the possible permutations." Tests, which should be considered for the appropriate process change. B M,Q - T L H - - H H G - Tests, which should be considered for the appropriate process change after selection of condition table. Q L G - Suppliers performed tests (mark with an 'X' for done or 'G' for generic) G X X X G X X X X X G G G X Reason for exception of tests and/or usage of generic data: 1. PTC not required because maximum rated power is <1 watt and delta Tj is <40C. 2. LI is applicable only for through-hole package. 3. SC applicable for smart power devices only. 4. Standard mold compound used in NXP-ATKL and ATP1. No change to SER is expected Not required. I Information Note required. P PCN required. A letter or " " indicates that performance of that stress test should be considered for the appropriate process change. CONDITIONS A Only for peripheral routing X B For symbol rework, new cure time, temp X C If bond to leadfinger D Design rule change X E Thickness only X F MEMS element only X G Generic Data available H Hermetic only X J EPROM or EEPROM L Lead free M For devices requiring PTC X N Passivation and gate oxide X P Passivation and interlevel dielectric X Q Wire diameter decrease T Only for Solder Ball SMD X # Only from non-100% burned-in parts X * For "burn in" changes IOL or ELFR recommended X => Please mark 'NO' with 'x', default is 'YES' A letter or " " indicates that performance of that stress test should be considered for the appropriate process change.