InGaN quantum dot based LED for white light emitting
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1 Emerging Photonics 2014 InGaN quantum dot based LED for white light emitting Luo Yi, Wang Lai, Hao Zhibiao, Han Yanjun, and Li Hongtao Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing , China
2 Background Outline Spectrum optimization of white LED Phosphor-free RGB white LED expects & challenges MOCVD growth of InGaN quantum dots based LED Summary 2
3 Conventional lighting vs. Solid state lighting High efficiency High lighting quality 3
4 Lumen efficiency (lm/w) Advantages of solid state lighting on energy-saving 200 > lm/w lm/w Year 4
5 Lumen efficiency strongly depends on spectrum 5
6 Spectrum of current white LED Current white LED Blue LED chip+yellow phosphor little green and red in spectrum rendering index ~ 60 Yellow phosphor Blue LED chip 6
7 Drawbacks of blue LED + yellow phosphor LER ~330lm/W Assuming η p (determined by internal quantum efficiency, light extraction efficiency, voltage and conversion efficiency) can reach 50% in commercial manufacture process, blue LED + yellow phosphor is difficult to achieve goal of 200lm/W. Rendering index ~60 Phosphor Influence the lifetime, efficiency and color uniformity of LED 7
8 CRI Requirements of general lighting indoor Rendering index > 80 Museum Theater Rendering index > 85 Due to the gap on lighting quality, current solid state lighting sources are difficult to win the market. 8
9 Solution for future high quality white LED Lumen efficiency >200lm/W Assuming η p is 50% in commercial manufacture process, LER should be higher than 400 lm/w Rendering index >80 RGB white LED is a possible solution to achieve high lumen efficiency and high rendering index simultaneously 9
10 Spectra optimization is the key of high efficiency and high quality Lighting Using RGB LEDs, to achieve color rendering index>80 while LER>400 lm/w Searching the peak wavelength λ i, and fractional radiant flux I i of the RGB LEDs Assuming that the FWHM for green LEDs is 30 nm, and that for blue and red LEDs are both 20 nm 10
11 CCT of SSL sources 4000K 4500K 5000K 5700K 3500K 2700K 3000K Planckian Locus 6500K According to ANSI, SSL products shall have chromaticity values that fall into the corresponding nominal Correlated Color Temperature (CCT) categories. 11
12 Maximum LER that RGB white LED could achieve with color rendering index greater than Max LER (lm/w) CRI CCT(K) 12
13 Optimized Spectra for Low CCT For CCT 4500K, RGB white LED could achieve LER 400lm/W under CRI 80 As an example, the optimized spectral for CCT of 2700K is illustrated The center wavelength range for : R LED: nm G LED: nm B LED: nm Peak Intensity R-LED G-LED B-LED CCT 2700K CRI 80 LER 400lm/W Center Wavelength(nm) 13
14 Spectra optimized for CCT of 2700K 0.02 CRI=80, max LER=433 lm/w max CRI=88, LER=400 lm/w Relative Intensity Wavelength(nm) 14
15 Optimized Spectra for High CCT For CCT >4500K, RGB white LED could not achieve LER 400lm/W under CRI 80 The optimized spectral for CCT of 6500K is illustrated The max LER:366 lm/w The center wavelength range ( for LER 350 lm/w) : R LED: nm G LED: nm B LED: nm Peak Intensity R-LED G-LED B-LED CCT 6500K CRI 80 LER 350lm/W Center Wavelength(nm) 15
16 Spectra optimized for CCT of 6500K Relative Intensity CRI=80, max LER=366 lm/w max CRI=89, LER=351 lm/w Wavelength(nm) 16
17 Challenges of RGB white LED In appropriate combinations of wavelength and power, RGB can obtain high LER (~400 lm/w) and high RI (>80) simultaneously. Efficiency of green LED is lower compared to blue and red LED. Red LED is based on AlGaInP, while blue and green LEDs are based on InGaN. Drivers and light mixing systems are complex. The best solution is that RGB colors are emitted from one chip in high efficiency. 17
18 Realization of RGB white LED on chip-level p-gan Active region n-gan Nonuniform carrier injection in different QWs, leading to spectrum shift with injection Low efficiency 7.9 lm/w Stack of multiple RGB QWs LED based on red 2QWs + green 1QW + blue 2QWs Jpn. J. Appl. Phys. 41, L246 (2002) 18
19 Low Quantum Efficiency of Green LED Green Gap large lattice mismatch between InGaN and GaN quantum confined stark effect (QCSE) of high In-content InGaN/GaN MQWs 19
20 InGaN/GaN quantum well is not suitable for long wavelength visible LED Large mismatch and strong strain in high indium content InGaN QW reduce the emission efficiency Elec. Wave function Hole wave function 20
21 How to Improve the Efficiency of Green LED? Nonpolar and Semipolar GaN QCSE eliminated Poor crystal quality, unless expensive nonpolar GaN sub. applied Threading dislocations Stacking faults Appl. Phys. Lett, 81, 3 (2002) Large mismatch between InGaN and GaN still exists 21
22 QW vs QD In QD the strain is partially relieved. QCSE is likely to be partially suppressed InGaN QDs are grown in the c-plane, which is adaptable in conventional production 22
23 QWs + QDs for white LED Intensity wavelength InGaN QW for blue light QDs for long wavelength light 23
24 Three growth modes Frank van der Merwe (FM) mode D growth Stranski Krastanov (SK) mode D to 3D growth Volmer Weber (VW) mode D growth 24
25 Critical Thickness of InGaN on GaN Dislocation generation is preferred, new growth method should be developed 3D growth is preferred, but the wetting layer is too thick W. Zhao, L. Wang, et al., Journal of Crystal Growth, 327 (2011), Page 25
26 Growth Interruption Method for QD growth by MOCVD InGaN GaN Deposite InGaN film on GaN first GaN Growth interruption Adatoms migrate on surface and form dots 2 steps GaN Regrowth of InGaN to make dots dense 3 steps W. Zhao, L. Wang, et al. Jpn. J. Appl. Phys. 50 (2011) Page 26
27 Optical Properties of InGaN QDs Density cm -2 Diameter 14.3 nm Height 7.6 nm T-dependent PL spectra T-dependent PL intensity and linewidth Micro-PL from a single QD wetting-layer S-K mode L. Wang, et al. Phys. Status Solidi C, 9, 782 (2012) 27
28 Growth of multilayer InGaN quantum dots GaN Sapphire substrate GaN Sapphire substrate GaN Sapphire substrate It is very critical to obtain the flat GaN capping layer on rough InGaN quantum dots for next layer growth 28
29 100 nm Why need optimization of GaN barriers? GaN barriers are grown with the same temperature and carrier gas with InGaN QDs. 2 layers GaN GaN InGaN InGaN Ga N In 5 layers It shows rather rough surface morphology of GaN barriers Rough surface of GaN will influence the uniformity and morphology of InGaN QDs in different layers. Wenbin Lv, Lai Wang, et al. Chinese Physics Letters, 28, ,
30 Surface morphology of GaN barrier grown under optimized conditions Uncapped single layer QDs QDs + GaN capping layer GaN Sapphire substrate GaN Sapphire substrate InGaN: 650 O C N 2 GaN: 650 O C N 2 Ra=1.937 nm GaN: 760 O C H 2 Ra=0.416 nm Surface of GaN barrier becomes much smoother by using hydrogen as carrier gas and increasing growth temperature. 30
31 QDs Morphology between single layer and 10-layer FM of Single layer QDs TEM of Multilayer QDs [0001] Diameter nm Height nm Single QD Multilayer QDs
32 Temperature dependent PL of single layer and 10-layer QDs 8 GaN Sapphire substrate Intensity (a.u.) K 20K 40K 60K 80K 100K 130K 160K 190K 220K 250K 300K PLIntensity PLIntensity 300K 10K 4.4% Wavelength (nm) 10 GaN Sapphire substrate Intensity (a.u.) K 15K 20K 30K 40K 60K 80K 100K 130K 160K 190K 220K 250K 300K PLIntensity PLIntensity 300K 10K 24% Wavelength (nm) 32
33 LED Based on Multilayer InGaN QDs GaN Sapphire substrate GaN Sapphire substrate GaN Sapphire substrate 33
34 Cross-Sectional TEM of Green LED [0001] 10 nm 2 nm 5-layer of InGaN/GaN QDs (3 nm/15 nm) 34
35 EL Spectrum of InGaN QD Green LED ma Blue-shift 1.5 2~100 ma W. B. Lv, L. Wang, et al., Appl. Phys. Express 7, (2014) 35
36 Comparison of blue-shift with other results Current density (A/cm 2 ) Blue-shift (nm) 1 c-plane MQW nanorod QD (MBE) Non-polar (m-plane) Semi-polar QD (our sample) Commercial LED 2. D.-W. Lin et al., Appl. Phys. Lett. 101, (2012) 3. M. Zhang et al., Appl. Phys. Lett. 97, (2010) 4. T. Detchprohm et al., Appl. Phys. Lett. 96, (2010) 5. Y. Zhao, et al., Appl. Phys. Express 6, (2013) 6. W B. Lv, et al., Appl. Phys. Express 7, (2014) 36
37 Cross-Sectional TEM of Red LED [0001] 10-layer of InGaN/GaN QDs (3 nm/30 nm) 10-pair superlattice of In 0.02 Ga 0.98 N (3 nm)/gan (3 nm) 37
38 EL Spectrum of InGaN QD Red LED Leakage at small current Easy to realize long wavelength W. B. Lv, L.Wang, et al., Jpn. J. Appl. Phys. 52, 08JG13 (2013) 38
39 Visible QDs LEDs grown by THU cyan green yellow orange red white Page 39
40 Summary and Outlook Spectra of RGB white LED are optimized to meet high color rendering index InGaN QDs with high indium contents are grown by MOVPE using growth interruption method. Visible QDs LED working under electrical injection are demonstrated. For a 530-nm green LED, the peak wavelength shift is only 1.5 nm (2 to 100 ma). InGaN/GaN SL is used to obtain a red LED beyond 700 nm Phosphor-free white LED based on QDs, CRI~60 Future Work High CRI phosphor-free white LED Low threshold green laser based on InGaN QD Thank you very much for your attention 40
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