Investigation of Carbon Nanotube Growth on Multimetal Layers for Advanced Interconnect Applications in Microelectronic Devices
|
|
- Bethanie Newman
- 6 years ago
- Views:
Transcription
1 Journal of The Electrochemical Society, XXXX /2009/156 3 /1/0/$23.00 The Electrochemical Society Investigation of Carbon Nanotube Growth on Multimetal Layers for Advanced Interconnect Applications in Microelectronic Devices Nay Lin, a, * Huili Wang, a Pradeep Dixit, b, * Ting Xu, a Sam Zhang, a and Jianmin Miao a,z a Micromachines Centre, School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore b Packaging Research Center, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia , USA In this paper we present the microstructural study behind the growth of carbon nanotubes CNTs on the multimetal buffer layers due to its importance in microelectronics and microelectromechanical systems applications. Two different buffer layers, i.e., aluminum Al and titanium nitride TiN, were deposited on the conductive layers of tantalum/copper/tantalum. A 5 nm thick iron film was used as a catalyst layer to grow the CNTs. The fundamental mechanism behind the formation of catalyst nanoparticles on these two buffer layers, i.e., Al and TiN, was studied and analyzed by various characterization tools, such as atomic force microscopy, X-ray photoelectron spectroscopy, and scanning electron microscope. The formation of aluminum oxide nanoparticles during the CNT growth process was observed in the case of aluminum buffer layer. From the experimental results, it was concluded that TiN can be used as a stable buffer layer on the conductive metal lines. The CNTs growth on both buffer layers was found to be in random directions, which is due to the formation of bigger and less dense catalyst nanoparticles in comparison with the CNTs grown on the conventional buffer layer of thermally grown silicon dioxide on the silicon substrate, on which vertically aligned CNTs are grown The Electrochemical Society. DOI: / All rights reserved. Manuscript submitted October 29, 2008; revised manuscript received December 1, Published xx xx, xxxx. 25 Since their discovery by Sumio Iijima, 1 carbon nanotubes 26 CNTs have shown excellent thermal, 2 mechanical, 3 and electrical 27 properties 4 and thus are being extensively studied for various applications in nanoelectronics, 5 nano-electromechanical systems, 6 bio microelectromechanical systems, 7 biosensors, etc. CNTs have demonstrated scattering-free, ballistic electron transport and due to this, a current density as high as A/cm 2 can be achieved. The capability of carrying such a high current density has initiated the need for fabricating CNT-based electronic devices such as resonators, 34 field-emission displays, etc. These CNT-based electronic devices 35 will be more compact in size and will have ultrahigh-processing 36 speed and lower time delay than the present copper-interconnectbased devices. Although high-aspect-ratio through-wafer copper interconnection 8,9 was proposed for the next immediate generation 39 of three-dimensional packaging, CNT interconnection is likely to be 40 the final goal for future ultrahigh-current-density packaging technologies In past years, growth of CNTs by various methods, such as electric arc, 10 laser ablation 11 and chemical vapor deposition CVD, have been reported. Due to its abilities of growing ultralong CNTs in 45 large numbers and selective area growth, the CVD process has 46 emerged as the main process to grow vertically aligned CNTs. Various research groups have reported the growth of single as well as multiwalled CNTs with varying lengths, diameters, and orientations. 49 In past research publications, CNTs were grown on various metal 50 catalysts, such as iron Fe, nickel Ni, and cobalt Co, which 51 themselves were deposited on the silicon substrate by physical vapor 52 deposition methods such as sputtering or evaporation. In all these 53 cases, a silicon dioxide layer was grown on the silicon substrate by 54 the thermal oxidation method. The silicon dioxide layer acts as a 55 buffer layer between the silicon substrate and the metal catalyst and 56 prevents the diffusion of metal catalyst into silicon. In the absence 57 of any buffer layer, the metal catalyst will diffuse into silicon, which 58 in turn will affect CNT growth. 59 The successful realization of CNT-based interconnects also requires on-chip copper interconnect lines and CNT interconnect con necting to on-chip copper interconnects. The most important process 62 in achieving the CNT interconnect is the growth of CNTs on metallization. A schematic diagram of CNT growth on a multimetal layer 63 is illustrated in Fig. 1. In this diagram, copper Cu acts as the 64 conductive metal line with a buffer layer to prevent the diffusion of 65 copper into silicon and also acts as an adhesion layer. The growth 66 mechanism of CNTs on metal buffer layers is different from that on 67 a silicon dioxide buffer layer. At the high process temperature C there are relatively higher chances that the metal catalyst 69 may react with the other metals and form intermetallic compounds 70 IMCs. These IMCs are not desired for the satisfactory growth of 71 CNTs and must be avoided. Due to the continuously growing need 72 of CNT-based interconnects on copper conductive lines, it is necessary to understand the growth mechanism of CNTs on multimetal layers. Unfortunately, there are not many published results available 75 which elaborate on CNT growth on multimetal layers. The growth 76 of CNTs on aluminum substrate 13 was reported in the literature. The 77 growth mechanism of CNTs on aluminum substrate was observed to 78 be a tip growth mechanism with an iron catalyst layer deposited by 79 spin-coating iron nitrate Fe NO 3 3 9H 2 O and C 2 H 2 as carbon 80 feedstock at 650 C at the CNT growth process. Titanium nitride had 81 been used as a diffusion barrier layer between aluminum and silicon 82 in the microelectronics industry for many years. More recently, there 83 were attempts to grow CNTs and carbon nanofiber on different 84 metal underlayers due to motivation for practical applications. 14,15 85 Although CNT growth on the Ti/Cu metal system was 86 demonstrated, 16 the length of the CNTs is limited due to the plasmaenhanced CVD process In this paper, CNT growth on different buffer layers SiO 2,Al, 89 and TiN was studied. The growth mechanism of CNTs on the two 90 * Electrochemical Society Student Member. z mjmmiao@ntu.edu.sg Figure 1. Schematic diagram of CNT growth on copper conductive lines.
2 2 Journal of The Electrochemical Society, XXXX 2009 Figure 3. Temperature profiles of annealing and CNT growth steps in the thermal CVD. represents the sample with the standard silicon dioxide buffer layer 126 used for growing CNTs. In order to realize a practical CNT-based 127 device, where other metal layers such as Cu conductive layer, 128 Ti/Ta adhesion/barrier layer, and Fe/Ni/Co catalyst layer are 129 also present, samples B and C were also investigated. Sample B 130 utilizes TiN as a buffer layer, while sample C considers Al. In both 131 cases, the conductive metal layers used were Ta/Cu/Ta. 132 Figure 2. Schematic diagram of samples used in experiments. 91 different buffer layers, i.e., Al and TiN on the Ta/Cu/Ta metal layers, is reported and compared with the CNTs grown on silicon oxide X-ray photoelectron spectroscopy XPS was used to study the 94 chemical state of the resulting catalyst nanoparticles. The surface 95 morphologies of the multimetal layers with and without catalyst 96 layers were studied by atomic force microscopy AFM and scanning electron microscopy 97 SEM. 98 Experimental 99 Sample preparation. The fabrication process can be summarized by the following steps: Silicon substrates 100, p-type, cm resistivity, and 100 mm diam were cleaned in piranha 102 solution for 20 min at 120 C to remove any organic contaminations. 103 A1 m thick silicon dioxide layer was thermally grown on the 104 wafer in a furnace by wet oxidation at 1100 C. The deposition of 105 metal layers was performed using the magnetron sputtering process. 106 A tantalum layer of 20 nm thickness was used as an adhesion layer 107 followed by a 1 m thick copper layer. A 20 nm thick Ta layer was 108 deposited again, which acts as a barrier layer and also prevents 109 copper oxidation. 110 For deposition of the TiN layer, the wafers were loaded into a 111 different magnetron sputtering chamber. The TiN sputtering process 112 was performed at room temperature and at a chamber pressure of Pa. The gas flow rates of argon and nitrogen were 50 and sccm, respectively. A plasma source power of 500 W was used at 115 a substrate bias voltage of 20 V. The average thickness of 50 nm 116 TiN was deposited for a duration of 6 min. For Al buffer layer 117 deposition, an electron-beam evaporation process was used. An Al 118 layer of 5 nm and an Fe catalyst layer of 5 nm were deposited 119 without breaking the vacuum. A very low chamber pressure of Torr was used to ensure the satisfactory uniformity of the 121 film. 122 Three samples with different buffer layers were prepared to study 123 the formation of catalyst nanoparticles and their effects on CNT 124 growth. Figure 2 shows a schematic description of the samples 125 along with the thicknesses of individual metal layers. Sample A Annealing of samples and CNT growth in thermal CVD. In 133 order to study the formation of catalyst nanoparticles and material 134 composition, the samples, consisting of the conductive layer, buffer 135 layer, and iron catalyst layer, were annealed in a thermal CVD 136 chamber. The samples were annealed at 700 C for 15 min in the 137 presence of H sccm and Ar 400 sccm with a chamber pressure of 4.9 Torr. This annealing step induces the nucleation and formation of catalyst nanoparticles which are needed to grow the 140 CNTs. 17 After the annealing step, the CNT growth step was performed. The temperature profile for annealing and CNT growing process is illustrated in Fig. 3. Once the annealing step was over, 143 acetylene C 2 H 2 gas 100 sccm was introduced for 15 min at a 144 chamber pressure of 5.9 Torr. After the CNT growth process, the 145 temperature was ramped down to room temperature of 25 C at approximately 3 C/min Characterization of catalyst nanoparticles and CNTs. For the 148 XPS study of catalyst nanoparticles, a Kratos-Axis spectrometer 149 with monochromatic Al K ev X-ray radiation 15 kv 150 and 10 ma and hemispherical electron energy analyzer were used. 151 The morphology of the annealed catalyst layer was taken by AFM 152 Digital Instruments, Santa Barbara in the tapping mode. The 153 grown CNTs were characterized by the Hitachi scanning electron 154 microscope under an accelerating voltage of kv. 155 Results and Discussion 156 CNT growth on silicon dioxide buffer layer (sample A). For 157 sample A, a catalyst layer Fe having a thickness of 5 nm was 158 deposited. After annealing in the thermal CVD chamber at 700 C, 159 the samples were characterized by SEM. Figure 4a shows the top 160 view of sample A after annealing, which has Fe catalyst on 1 m 161 thick thermally grown silicon dioxide layer. It can be seen that the 162 Fe film has been broken into nanoparticles of varying sizes and 163 shapes. The average size of these highly dense nanoparticles varies 164 between 30 and 100 nm. Such a highly dense nanoparticle array is 165 ideally suited for growing dense CNTs of relatively smaller diameter. When the CNTs were grown on this sample, a very satisfactory CNT growth was observed. Figure 4b shows an SEM image of the 168 vertically aligned CNTs grown on this sample. The CNTs grown on 169 the sample are of multiwalled type and have a diameter varying 170 between 40 and 100 nm. The dense, vertically aligned CNT bundles 171 were grown on the annealed iron nanoparticles. Due to the high 172 density and the close packing of the nanoparticles, the CNT growth 173 was preferred in the vertical direction, as it is the only degree of 174 freedom available during CNT growth. The measured electrical resistivity of the CNTs is about cm
3 Journal of The Electrochemical Society, XXXX Figure 6. CNTs grown on the TiN buffer layer. Figure 4. SEM images of a the top view of iron catalyst particles on the silicon dioxide layer after annealing at 700 C and b CNTs grown on the silicon oxide buffer layer. 177 CNT growth on Ta/Cu/Ta metal layers with TiN buffer layer 178 (sample B). When CNTs were grown on sample B, which has TiN 179 buffer layer, some interesting mechanisms were observed. Figure 5a 180 shows the AFM profile of the sample with an annealed TiN surface 181 with underlying Ta/Cu/Ta metal layers. AFM analysis of the surface 182 profile of sample B shows that the grain structure of TiN before the 183 annealing is almost the same as the sputtered TiN thin film, as reported in the literature. 18 The average grain size of the sputtered TiN film is about nm. Figure 5b shows the AFM profile of the Figure 5. Color online AFM profile of annealed TiN surface, a without Fe catalyst and b with Fe catalyst. same sample after the annealing step. The formation of nanoparticles on the TiN layer can be observed from the picture. It can be observed that the size of nanoparticles formed is larger than that 188 required for catalytic growth of CNTs 100 nm. The density of 189 particles having a diameter of approximately nm is very low, 190 as it can be observed in the figure. This is the reason only the forest 191 of CNTs were grown on the TiN barrier layer rather than a vertically 192 aligned CNT bundle as widely reported, 19 because the formation of 193 a vertically aligned CNT bundle is due to the vertical direction of 194 CNT growth being the only possible degree of freedom for highly 195 dense catalyst nanoparticles. 196 The incomplete formation of Fe catalyst nanoparticles of bean 197 shape can also be seen in Fig. 5b. With the same experimental parameters and catalyst thickness varying from 2 to 10 nm on the ther mally grown silicon dioxide layer, the vertically aligned dense CNTs 200 bundles were grown. An annealing temperature of 700 C was used 201 for 15 min for the Fe catalyst layer on the TiN buffer layer. The 202 above experiments show that an annealing temperature of 700 C is 203 not enough for complete formation of nanoparticles, which may be 204 due to the difference in adhesion properties between the Fe/SiO interface and the Fe/TiN interface. Figure 6 shows the top view of 206 CNTs grown on the TiN buffer layer. It can be seen that the density 207 of CNTs is much lower in comparison with the results usually reported in literature with CNT growth on a stable buffer such as silicon dioxide. The CNTs grew in random orientations, forming a 210 layer of porous CNT-coated surface approximately 2 m thick. 211 CNT growth on Ta/Cu/Ta metal layers with an aluminum buffer 212 layer (sample C). Figure 7 shows an AFM surface profile of 213 sample C with an Al buffer layer and Fe catalyst after annealing. 214 Formation of nanoparticles with sizes ranging from 20 to 200 nm 215 can be seen. The density of nanoparticles is much lower than that of 216 catalyst nanoparticles on the buffer layer such as silicon dioxide. 217 According to the available experimental data, the nanoparticles consist of aluminum oxide, iron catalyst, and possibly iron oxide, and the source of oxygen is postulated to be from the atmosphere and 220 oxidized iron catalyst. In order to determine the chemical state of the 221 Al and Fe catalyst layer, XPS examination was performed with annealed samples having an Al buffer layer on the Ta/Cu/Ta metal layer. An XPS spectrum of the sample is shown in Fig. 8. One of the 224 curves shows the peak before etching in argon plasma and the other 225 shows the peak after etching for 960 s. XPS experimental results 226 show that the aluminum oxide particles were formed during the 227 annealing process in the presence of hydrogen flow. The source of 228 oxygen is the oxidized iron catalyst layer. Although there is a reduction reaction inside the reaction chamber with the presence of hy drogen gas flow, oxygen from the iron oxide layer may have at- 231
4 4 Journal of The Electrochemical Society, XXXX 2009 Figure 9. SEM image of CNTs grown on the aluminum buffer layer. Figure 7. Color online AFM profiles of Al 2 O 3 nanoparticles after annealingat700 C. 232 tracted the underlying Al layer, forming stable ceramic aluminum 233 oxide particles which act as the stable support for CNT growth 234 during the recrystallization of Al and Fe nanoparticles. Although it is 235 possible to have a very thin native aluminum oxide layer on the 236 samples during Al/Fe deposition and after taking the samples out of 237 the vacuum chamber, the thickness is limited to less than 1 nm, 238 enabling the metallic Al to reflow during annealing. 239 Figure 9 shows the CNTs grown on the Al buffer layer with 240 Ta/Cu/Ta metal layers. The density of CNTs is very low and CNTs 241 are randomly oriented. This is due to the formation of low-density 242 catalyst nanoparticles allowing the CNTs to grow in random orientation. In thermal CVD growth of CNTs, vertically aligned CNTs were obtained due to the densely grown CNTs guiding themselves 245 vertically. The only possible direction for CNT growth to continue is 246 the vertical direction, because growth in the lateral direction is impossible due to the presence of other CNTs on the side. However, with the low density of catalyst, no such self-guiding mechanism is 249 possible because CNTs continuing to grow will also have the free 250 space to grow laterally until coinciding with others. Along with the 251 absence of another guiding mechanism e.g., electric field in plasmaenhanced CVD, CNTs grown on the low-density catalyst layer are randomly oriented. In contrast to this situation, experiments with CNTs grown on a silicon dioxide layer showed highly dense nanoparticle formation and vertically aligned CNT growth, as discussed in the previous section. From the above experimental results, the 256 growth mechanism of CNTs in the present case is similar to that of 257 CNTs with an Al/Fe bimetallic layer catalyst 13 with a tip growth 258 mechanism. Figure 10 shows a schematic diagram of the growth of 259 CNTs on Ta/Cu/Ta metal layers with CNTs grown on the aluminum 260 oxide particles. Figure 11 shows CNTs grown on patterned 261 Ta/Cu/Ta metal layers on which an Al buffer layer and an Fe catalyst layer were selectively deposited. Figure 11b shows a detailed view of CNTs grown 4 m thick on the multimetal layers. Due 264 to the possible implication of a buffer layer, the type and conductivity of the CNTs may differ from those grown on the silicon oxide layer, and further research is needed to investigate the type and 267 electrical properties of those CNTs. 268 Conclusion 269 CNT growth on Ta/Cu/Ta metal layers was studied with different buffer layers, namely, Al and TiN. In order to compare the growth of CNTs on TiN and Al buffer layers with those grown on 272 silicon dioxide buffer layers, we studied the formation of catalyst 273 nanoparticles on the silicon dioxide layer. Highly dense catalyst particles were observed and vertically aligned CNTs were grown, as widely reported in literature. From experiments with a TiN buffer 276 layer, we found a stable TiN layer after annealing without recrystallization. The grain size of the TiN layer was the same as that of sputtered TiN thin film reported in the literature. Study of the size 279 and density of nanoparticles shows that the larger and incomplete 280 formation of nanoparticles after annealing is attributed to the smaller 281 Figure 8. Color online XPS spectrum of aluminum oxide before and after argon plasma etching in XPS. Figure 10. Schematic diagram of the CNT growth mechanism on an Al buffer layer. Al was formed to Al 2 O 3 nanoparticles after annealing.
5 Journal of The Electrochemical Society, XXXX density of nanoparticles available for CNT growth. This causes 283 growth of CNTs in random directions rather than in the vertical 284 direction. From the experiments with an Al buffer layer, the formation of aluminum oxide nanoparticles was observed together with Fe 285 and Fe 2 O 3 in the XPS analysis. We found that the CNT growth 286 mechanism with the Al buffer layer is due to the formation of Al 2 O nanoparticles on the underlying metal layers during the CNT growth 288 process. It can be concluded that the growth of randomly oriented 289 CNTs on the multimetal layer with Al and TiN buffer layers on the 290 metal layers is due to the sparse nanoparticle formation of the CNT 291 growth process during annealing as compared to the CNT grown on 292 a silicon dioxide buffer layer. A randomly oriented CNT-coated surface was observed on the samples with Al and TiN buffer layers on the underlying metal layers, although the TiN buffer layer may be 295 suitable due to its electrically conductive properties in practical applications Figure 11. SEM picture showing a the CNTs grown on the Al buffer layer on a Ta/Cu/Ta multimetal system and b a magnified view of CNTs grown on a selective area. Acknowledgments 298 The authors acknowledge support by the Agency for Science, Technology and Research A * 299 STAR, Singapore, under SERC grant 300 no and the industrial sponsorship by Delphi Automotive, Singapore Nanyang Technological University assisted in meeting the publication costs of this article. References 1. S. Iijima and T. Ichihashi, Nature (London), 354, P. Kim, L. Shi, A. Majumdar, and P. L. McEuen, Phys. Rev. Lett., 87, R. S. Ruoff, D. Qian, and W. K. Liu, C. R. Phys., 4, B. Q. Wei, R. Vajtai, and P. M. Ajayan, Appl. Phys. Lett., 79, J. Li, Q. Ye, A. Cassell, H. T. Ng, R. Steven, J. Han, and M. Meyyappan, Appl. Phys. Lett., 82, M. Dequesnes, S. V. Rotkin, and N. R. Aluru, Nanotechnology, 13, N. Sinha, J. Ma, and J. T. W. Yeow, J. Nanosci. Nanotechnol., 6 3, P. Dixit and J. Miao, J. Electrochem. Soc., 153, G P. Dixit, J. Miao, and R. Preisser, Electrochem. Solid-State Lett., 9, G A. A. Puretzky, D. B. Geohegan, X. Fan, and P. Cook, J. Appl. Phys., 70, Y. Zhang, H. Gu, and S. Iijima, Appl. Phys. Lett., 73, Y. Huh, M. L. H. Green, Y. H. Kim, J. Y. Lee, and C. J. Lee, Appl. Surf. Sci., 249, C. Emmenegger, J. M. Bonard, P. Mauron, P. Sudan, A. Lepora, B. Grobety, A. Zuttel, and L. Schlaphach, Carbon, 41, M. S. Kabir, R. E. Morjan, O. A. Nerushev, P. Lundgren, S. Bengtsson, P. Enokson, and E. E. B. Campbell, Nanotechnology, 16, M. S. Kabir, R. E. Morjan, O. A. Nerushev, P. Lundgren, S. Bengtsson, P. Enoksson, and E. E. B. Campbell, Nanotechnology, 17, M. Y. Chen, C. M. Yeh, C. J. Huang, J. Hwang, A. P. Lee, and C. S. Kou, J. Electrochem. Soc., 153, T. Xu, Z. H. Wang, J. M. Miao, X. F. Chen, and C. M. Tan, Appl. Phys. Lett., 91, J. E. Sundgren, B. O. Johansson, H. T. G. Hentzell, and S. E. Karlsson, Thin Solid Films, 105, Z. Linbo, J. Xu, Y. Xiu, Y. Sun, D. W. Hess, and C. P. Wong, Carbon, 44, AQ: #1 AQ: #2
6 NOT FOR PRINT! FOR REVIEW BY AUTHOR NOT FOR PRINT! AUTHOR QUERIES JES #1 AQ: Please insert pg. no. for Ref. 7 on line 315. #2 AQ: Please check accuracy of Ref. 10 on line 318
ENS 06 Paris, France, December 2006
CARBON NANOTUBE ARRAY VIAS FOR INTERCONNECT APPLICATIONS Jyh-Hua ng 1, Ching-Chieh Chiu 2, Fuang-Yuan Huang 2 1 National Nano Device Laboratories, No.26, Prosperity Road I, Science-Based Industrial Park,
More informationJournal of Chemical and Pharmaceutical Research, 2017, 9(1): Research Article
Available online www.jocpr.com Journal of Chemical and Pharmaceutical Research, 2017, 9(1):163-167 Research Article ISSN : 0975-7384 CODEN(USA) : JCPRC5 Synthesis and Characterization of Carbon Nano Spheres
More informationGrowth and Doping of SiC-Thin Films on Low-Stress, Amorphous Si 3 N 4 /Si Substrates for Robust Microelectromechanical Systems Applications
Journal of ELECTRONIC MATERIALS, Vol. 31, No. 5, 2002 Special Issue Paper Growth and Doping of SiC-Thin Films on Low-Stress, Amorphous Si 3 N 4 /Si Substrates for Robust Microelectromechanical Systems
More informationAnomaly of Film Porosity Dependence on Deposition Rate
Anomaly of Film Porosity Dependence on Deposition Rate Stephen P. Stagon and Hanchen Huang* Department of Mechanical Engineering, University of Connecticut, Storrs, CT 06269 J. Kevin Baldwin and Amit Misra
More informationVisit
Practical Applications for Nano- Electronics by Vimal Gopee E-mail: Vimal.gopee@npl.co.uk 10/10/12 Your Delegate Webinar Control Panel Open and close your panel Full screen view Raise hand for Q&A at the
More informationMetallization deposition and etching. Material mainly taken from Campbell, UCCS
Metallization deposition and etching Material mainly taken from Campbell, UCCS Application Metallization is back-end processing Metals used are aluminum and copper Mainly involves deposition and etching,
More informationCOMPATIBILITY OF THE ALTERNATIVE SEED LAYER (ASL) PROCESS WITH MONO- Si AND POLY-Si SUBSTRATES PATTERNED BY LASER OR WET ETCHING
COMPATIBILITY OF THE ALTERNATIVE SEED LAYER (ASL) PROCESS WITH MONO- Si AND POLY-Si SUBSTRATES PATTERNED BY LASER OR WET ETCHING Lynne Michaelson 1, Anh Viet Nguyen 2, Krystal Munoz 1, Jonathan C. Wang
More informationMorphology of Thin Aluminum Film Grown by DC Magnetron Sputtering onto SiO 2 on Si(100) Substrate
Morphology of Thin Aluminum Film Grown by DC Magnetron Sputtering onto SiO 2 on Si(1) Substrate Fan Wu Microelectronics Center, Medtronic Inc., Tempe, AZ 85261 James E. Morris Department of Electrical
More informationMater. Res. Soc. Symp. Proc. Vol Materials Research Society
Mater. Res. Soc. Symp. Proc. Vol. 940 2006 Materials Research Society 0940-P13-12 A Novel Fabrication Technique for Developing Metal Nanodroplet Arrays Christopher Edgar, Chad Johns, and M. Saif Islam
More informationALD and CVD of Copper-Based Metallization for. Microelectronic Fabrication. Department of Chemistry and Chemical Biology
ALD and CVD of Copper-Based Metallization for Microelectronic Fabrication Yeung Au, Youbo Lin, Hoon Kim, Zhengwen Li, and Roy G. Gordon Department of Chemistry and Chemical Biology Harvard University Introduction
More informationEFFECT OF GROWTH TEMPERATURE ON THE CATALYST-FREE GROWTH OF LONG SILICON NANOWIRES USING RADIO FREQUENCY MAGNETRON SPUTTERING
International Journal of Nanoscience Vol. 10, Nos. 1 & 2 (2011) 13 17 #.c World Scienti c Publishing Company DOI: 10.1142/S0219581X11007594 EFFECT OF GROWTH TEMPERATURE ON THE CATALYST-FREE GROWTH OF LONG
More informationThis article was originally published in a journal published by Elsevier, and the attached copy is provided by Elsevier for the author s benefit and for the benefit of the author s institution, for non-commercial
More informationAn XPS and Atomic Force Microscopy Study of the Micro-Wetting Behavior of Water on Pure Chromium* 1
Materials Transactions, Vol. 44, No. 3 (2003) pp. 389 to 395 #2003 The Japan Institute of Metals An XPS and Atomic Force Microscopy Study of the Micro-Wetting Behavior of Water on Pure Chromium* 1 Rongguang
More informationMicrostructures using RF sputtered PSG film as a sacrificial layer in surface micromachining
Sādhanā Vol. 34, Part 4, August 2009, pp. 557 562. Printed in India Microstructures using RF sputtered PSG film as a sacrificial layer in surface micromachining VIVEKANAND BHATT 1,, SUDHIR CHANDRA 1 and
More informationSilver Diffusion Bonding and Layer Transfer of Lithium Niobate to Silicon
Chapter 5 Silver Diffusion Bonding and Layer Transfer of Lithium Niobate to Silicon 5.1 Introduction In this chapter, we discuss a method of metallic bonding between two deposited silver layers. A diffusion
More informationThermal Evaporation. Theory
Thermal Evaporation Theory 1. Introduction Procedures for depositing films are a very important set of processes since all of the layers above the surface of the wafer must be deposited. We can classify
More informationHigh Performance Lithium Battery Anodes Using Silicon Nanowires
Supporting Online Materials For High Performance Lithium Battery Anodes Using Silicon Nanowires Candace K. Chan, Hailin Peng, Gao Liu, Kevin McIlwrath, Xiao Feng Zhang, Robert A. Huggins and Yi Cui * *To
More informationCombinatorial RF Magnetron Sputtering for Rapid Materials Discovery: Methodology and Applications
Combinatorial RF Magnetron Sputtering for Rapid Materials Discovery: Methodology and Applications Philip D. Rack,, Jason D. Fowlkes, and Yuepeng Deng Department of Materials Science and Engineering University
More informationGrowth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties
Journal of Multidisciplinary Engineering Science and Technology (JMEST) Growth Of TiO 2 Films By RF Magnetron Sputtering Studies On The Structural And Optical Properties Ahmed K. Abbas 1, Mohammed K. Khalaf
More informationSurface Analysis of Electrochromic Switchable Mirror Glass Based on Magnesium-Nickel Thin Film in Accelerated Degradation Test
Materials Transactions, Vol. 52, No. 3 (2011) pp. 464 to 468 #2011 The Japan Institute of Metals Surface Analysis of Electrochromic Switchable Mirror Glass Based on Magnesium-Nickel Thin Film in Accelerated
More informationEtching Mask Properties of Diamond-Like Carbon Films
N. New Nawachi Diamond et al. and Frontier Carbon Technology 13 Vol. 15, No. 1 2005 MYU Tokyo NDFCT 470 Etching Mask Properties of Diamond-Like Carbon Films Norio Nawachi *, Akira Yamamoto, Takahiro Tsutsumoto
More informationEffect of barrier layers on the texture and microstructure of Copper films
Mat. Res. Soc. Symp. Proc. Vol. 766 2003 Materials Research Society E2.2.1 Effect of barrier layers on the texture and microstructure of Copper films Tejodher Muppidi and David P Field School of MME, Washington
More informationNickel-induced crystallization of amorphous silicon
University of Arkansas, Fayetteville ScholarWorks@UARK Mechanical Engineering Undergraduate Honors Theses Mechanical Engineering 5-2009 Nickel-induced crystallization of amorphous silicon Robert Fleming
More informationExcimer Laser Annealing of Hydrogen Modulation Doped a-si Film
Materials Transactions, Vol. 48, No. 5 (27) pp. 975 to 979 #27 The Japan Institute of Metals Excimer Laser Annealing of Hydrogen Modulation Doped a-si Film Akira Heya 1, Naoto Matsuo 1, Tadashi Serikawa
More informationProcess steps for Field Emitter devices built on Silicon wafers And 3D Photovoltaics on Silicon wafers
Process steps for Field Emitter devices built on Silicon wafers And 3D Photovoltaics on Silicon wafers David W. Stollberg, Ph.D., P.E. Research Engineer and Adjunct Faculty GTRI_B-1 Field Emitters GTRI_B-2
More informationDr. Priyabrat Dash Office: BM-406, Mob: Webpage: MB: 205
Email: dashp@nitrkl.ac.in Office: BM-406, Mob: 8895121141 Webpage: http://homepage.usask.ca/~prd822/ MB: 205 Nonmanufacturing In continuation from last class... 2 Top-Down methods Mechanical-energy methods
More informationMicrostructure and Vacuum Leak Characteristics of SiC coating Layer by Three Different Deposition Methods
Microstructure and Vacuum Leak Characteristics of SiC coating Layer by Three Different Deposition Methods Y. Kim Professor, Department of Materials Science and Engineering, College of Engineering, Kyonggi
More informationOxide Growth. 1. Introduction
Oxide Growth 1. Introduction Development of high-quality silicon dioxide (SiO2) has helped to establish the dominance of silicon in the production of commercial integrated circuits. Among all the various
More informationElectronic Supplementary Information (ESI) for
Electronic Supplementary Information (ESI) for Binder-free CNT network/mos 2 composite as high performance anode material in lithium ion battery Congxiang Lu, ab Wen-wen Liu b, Hong Li c and Beng Kang
More informationNovel concept of rechargeable battery using iron oxide nanorods. anode and nickel hydroxide cathode in aqueous electrolyte
Supplementary Information for: Novel concept of rechargeable battery using iron oxide nanorods anode and nickel hydroxide cathode in aqueous electrolyte Zhaolin Liu *, Siok Wei Tay and Xu Li Institute
More informationMARORA A Plasma Selective-oxidation Apparatus for Metal-gate Devices
Hitachi Review Vol. 57 (2008), No. 3 127 MARORA A Plasma Selective-oxidation Apparatus for Metal-gate Devices Tadashi Terasaki Masayuki Tomita Katsuhiko Yamamoto Unryu Ogawa, Dr. Eng. Yoshiki Yonamoto,
More informationA New Liquid Precursor for Pure Ruthenium Depositions. J. Gatineau, C. Dussarrat
1.1149/1.2727414, The Electrochemical Society A New Liquid Precursor for Pure Ruthenium Depositions J. Gatineau, C. Dussarrat Air Liquide Laboratories, Wadai 28, Tsukuba city, Ibaraki Prefecture, 3-4247,
More informationSynthesis of Multi Wall Carbon Nanotube (WCNT) over thin films of SiO 2 -Fe 2 O 3 deposited by Combustion Chemical Vapor Deposition
Synthesis of Multi Wall Carbon Nanotube (WCNT) over thin films of SiO 2 -Fe 2 O 3 deposited by Combustion Chemical Vapor Deposition M. D. Lima*, S. S. Stein, R. Bonadiman, M. J. de Andrade, C. P. Bergmann
More informationUltra High Barrier Coatings by PECVD
Society of Vacuum Coaters 2014 Technical Conference Presentation Ultra High Barrier Coatings by PECVD John Madocks & Phong Ngo, General Plasma Inc., 546 E. 25 th Street, Tucson, Arizona, USA Abstract Silicon
More informationAnnealing Nano-to-Micro Contacts for Improved Contact Resistance
Annealing Nano-to-Micro Contacts for Improved Contact Resistance Heather Chiamori*, Xiaoming Wu, Xishan Guo, Bao Quoc Ta, and Liwei Lin, Member, IEEE Berkeley Sensor & Actuator Center, Department of Mechanical
More informationLecture Day 2 Deposition
Deposition Lecture Day 2 Deposition PVD - Physical Vapor Deposition E-beam Evaporation Thermal Evaporation (wire feed vs boat) Sputtering CVD - Chemical Vapor Deposition PECVD LPCVD MVD ALD MBE Plating
More informationStudy on Properties of Silicon Oxycarbide Thin Films Prepared by RF Magnetron Sputtering Tao Chen a, Maojin Dong, Jizhou Wang,Ling Zhang and Chen Li
Study on Properties of Silicon Oxycarbide Thin Films Prepared by RF Magnetron Sputtering Tao Chen a, Maojin Dong, Jizhou Wang,Ling Zhang and Chen Li Science and Technology on Surface Engineering Laboratory,
More informationPlasma Activated EB-PVD of Titanium and its Compounds by Means of Large Area SAD
AIMCAL 2005 Myrtle Beach, SC, USA, October 19th, 2005 Plasma Activated EB-PVD of Titanium and its Compounds by Means of Large Area SAD E. Reinhold, C. Steuer VON ARDENNE Anlagentechnik GmbH, Dresden, Germany
More informationVisualization and Control of Particulate Contamination Phenomena in a Plasma Enhanced CVD Reactor
Visualization and Control of Particulate Contamination Phenomena in a Plasma Enhanced CVD Reactor Manabu Shimada, 1 Kikuo Okuyama, 1 Yutaka Hayashi, 1 Heru Setyawan, 2 and Nobuki Kashihara 2 1 Department
More informationSpecimen Preparation Technique for a Microstructure Analysis Using the Focused Ion Beam Process
Specimen Preparation Technique for a Microstructure Analysis Using the Focused Ion Beam Process by Kozue Yabusaki * and Hirokazu Sasaki * In recent years the FIB technique has been widely used for specimen
More informationFabrication of Ru/Bi 4-x La x Ti 3 O 12 /Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical Vapor Deposition
Mat. Res. Soc. Symp. Proc. Vol. 784 2004 Materials Research Society C7.7.1 Fabrication of Ru/Bi 4-x La x Ti 3 O 12 /Ru Ferroelectric Capacitor Structure Using a Ru Film Deposited by Metalorganic Chemical
More informationElectroless deposition, post annealing and characterization of nickel films on silicon
Bull. Mater. Sci., Vol. 31, No. 5, October 2008, pp. 729 736. Indian Academy of Sciences. Electroless deposition, post annealing and characterization of nickel films on silicon SUBIR SABHARWAL,, SIDDHARTH
More informationInvestigation of the oxidation process at the coppersolder interface with atomic force microscopy
Investigation of the oxidation process at the coppersolder interface with atomic force microscopy Attila Bonyár, Tamás Hurtony Department of Electronics Technology Budapest University of Technology and
More informationIntroduction. 1. Sputtering process, target materials and their applications
Sputtering is widely used in the production of electronic devices such as liquid crystal displays (LCDs), optical media, magnetic media and semiconductors. The Kobelco Research Institute, Inc. has been
More informationTransactions on Engineering Sciences vol 2, 1993 WIT Press, ISSN
A study of thin-film continuous coating process by vapour deposition P. Gimondo," F. Arezzo,* B. Grifoni,* G. Jasch& "Centra Sviluppo Materiali SpA, Via di Castel & Von Ardenne Anlagentchnik GmbH, Plattleite
More informationMANUSCRIPT COVER PAGE
MANUSCRIPT COVER PAGE Abstract ID: yclee11 or Program ID: EP406 Title of Paper: Microstructure and Phase Transformation of Zinc Titanate Thin Films Keywords: ZnTiO 3 ; thin film; amorphous; magnetron sputtering;
More informationLecture 22: Integrated circuit fabrication
Lecture 22: Integrated circuit fabrication Contents 1 Introduction 1 2 Layering 4 3 Patterning 7 4 Doping 8 4.1 Thermal diffusion......................... 10 4.2 Ion implantation.........................
More informationCorrosion Protect DLC Coating on Steel and Hastelloy
Materials Transactions, Vol. 49, No. 6 (2008) pp. 1333 to 1337 #2008 The Japan Institute of Metals Corrosion Protect DLC Coating on Steel and Hastelloy Hironobu Miya and Jie Wang Semiconductor Equipment
More informationEffect of nanoimprinted surface relief on Si and Ge nucleation and ordering
Microelectronics Journal 37 (2006) 1481 1485 www.elsevier.com/locate/mejo Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering T.I. Kamins a,, A.A. Yasseri a,1, S. Sharma a,2, R.F.W.
More informationBoron doped diamond deposited by microwave plasma-assisted CVD at low and high pressures
Available online at www.sciencedirect.com Diamond & Related Materials 17 (2008) 481 485 www.elsevier.com/locate/diamond Boron doped diamond deposited by microwave plasma-assisted CVD at low and high pressures
More informationOligomer-Coated Carbon Nanotube Chemiresistive Sensors for Selective Detection of Nitroaromatic Explosives
Supporting information for Oligomer-Coated Carbon Nanotube Chemiresistive Sensors for Selective Detection of Nitroaromatic Explosives Yaqiong Zhang, Miao Xu, Benjamin R. Bunes, Na Wu, Dustin E. Gross,,
More informationVertically aligned Ni magnetic nanowires fabricated by diblock-copolymer-directed Al thin film anodization
Vertically aligned Ni magnetic nanowires fabricated by diblock-copolymer-directed Al thin film anodization Researcher: Kunbae (Kevin) Noh, Graduate Student, MAE Dept. and CMRR Collaborators: Leon Chen,
More informationProcess Flow in Cross Sections
Process Flow in Cross Sections Process (simplified) 0. Clean wafer in nasty acids (HF, HNO 3, H 2 SO 4,...) --> wear gloves! 1. Grow 500 nm of SiO 2 (by putting the wafer in a furnace with O 2 2. Coat
More informationSupporting Information. Low temperature synthesis of silicon carbide nanomaterials using
Supporting Information Low temperature synthesis of silicon carbide nanomaterials using solid-state method Mita Dasog, Larissa F. Smith, Tapas K. Purkait and Jonathan G. C. Veinot * Department of Chemistry,
More informationThin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Can deposit any material on any substrate (in principal) Start with pumping down to high
Thin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Can deposit any material on any substrate (in principal) Start with pumping down to high vacuum ~10-7 torr Removes residual gases eg oxygen from
More informationThin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Sputtering: gas plasma transfers atoms from target to substrate Can deposit any material
Thin Films: Sputtering Systems (Jaeger Ch 6 & Ruska Ch 7,) Sputtering: gas plasma transfers atoms from target to substrate Can deposit any material on any substrate (in principal) Start with pumping down
More informationLead-Free Solder Bump Technologies for Flip-Chip Packaging Applications
Lead-Free Solder Bump Technologies for Flip-Chip Packaging Applications Zaheed S. Karim 1 and Jim Martin 2 1 Advanced Interconnect Technology Ltd. 1901 Sunley Centre, 9 Wing Yin Street, Tsuen Wan, Hong
More informationThis journal is The Royal Society of Chemistry S 1
2013 S 1 Thermochemical analysis on the growth of NiAl 2 O 4 rods Sang Sub Kim, a Yong Jung Kwon, b Gunju Sun, a Hyoun Woo Kim,* b and Ping Wu* c a Department of Materials Science and Engineering, Inha
More informationA NOVEL METHOD FOR THE IMPROVEMENT IN THERMOELECTRIC PROPERTY OF TIN OXIDE THIN FILMS AND ITS APPLICATION IN GAS SENSING
INTERNATIONAL JOURNAL ON SMART SENSING AND INTELLIGENT SYSTEMS, VOL. 1, NO. 2, JUNE 2008 A NOVEL METHOD FOR THE IMPROVEMENT IN THERMOELECTRIC PROPERTY OF TIN OXIDE THIN FILMS AND ITS APPLICATION IN GAS
More informationDevice Fabrication: Metallization
Device Fabrication: Metallization 1 Applications: Interconnection 2 Q & A Can we reduce all dimensions of metal interconnection line at the same ratio? R= l/wh. When we shrink all dimensions (length l,
More informationSimple method for formation of nanometer scale holes in membranes. E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Simple method for formation of nanometer scale holes in membranes T. Schenkel 1, E. A. Stach, V. Radmilovic, S.-J. Park, and A. Persaud E. O. Lawrence Berkeley National Laboratory, Berkeley, CA 94720 When
More informationPARAMETER EFFECTS FOR THE GROWTH OF THIN POROUS ANODIC ALUMINUM OXIDES
10.1149/1.2794473, The Electrochemical Society PARAMETER EFFECTS FOR THE GROWTH OF THIN POROUS ANODIC ALUMINUM OXIDES S. Yim a, C. Bonhôte b, J. Lille b, and T. Wu b a Dept. of Chem. and Mat. Engr., San
More informationInvestigation of Copper Agglomeration at Elevated Temperatures
G826 0013-4651/2003/150 12 /G826/5/$7.00 The Electrochemical Society, Inc. Investigation of Copper Agglomeration at Elevated Temperatures Ching-Yu Yang and J. S. Chen*,z Department of Materials Science
More informationUltra Fine Pitch Bumping Using e-ni/au and Sn Lift-Off Processes
Ultra Fine Pitch Bumping Using e-ni/au and Sn Lift-Off Processes Andrew Strandjord, Thorsten Teutsch, and Jing Li Pac Tech USA Packaging Technologies, Inc. Santa Clara, CA USA 95050 Thomas Oppert, and
More informationDevelopment of low roughness, low resistance bottom electrodes for tunnel junction devices
Development of low roughness, low resistance bottom electrodes for tunnel junction devices Designing and assembly of a new annealing setup for 150mm wafers David Filipe Coelho de Almeida Aurélio Setembro
More informationApplication of ultra-thin aluminum oxide etch mask made by atomic layer deposition technique
IOP Publishing Journal of Physics: Conference Series 61 (2007) 369 373 doi:10.1088/1742-6596/61/1/074 International Conference on Nanoscience and Technology (ICN&T 2006) Application of ultra-thin aluminum
More informationMaterials Characterization
Materials Characterization C. R. Abernathy, B. Gila, K. Jones Cathodoluminescence (CL) system FEI Nova NanoSEM (FEG source) with: EDAX Apollo silicon drift detector (TE cooled) Gatan MonoCL3+ FEI SEM arrived
More informationLecture 12. Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12. ECE Dr. Alan Doolittle
Lecture 12 Physical Vapor Deposition: Evaporation and Sputtering Reading: Chapter 12 Evaporation and Sputtering (Metalization) Evaporation For all devices, there is a need to go from semiconductor to metal.
More informationPlasma-Enhanced Chemical Vapor Deposition
Plasma-Enhanced Chemical Vapor Deposition Steven Glenn July 8, 2009 Thin Films Lab 4 ABSTRACT The objective of this lab was to explore lab and the Applied Materials P5000 from a different point of view.
More informationAlternative Methods of Yttria Deposition For Semiconductor Applications. Rajan Bamola Paul Robinson
Alternative Methods of Yttria Deposition For Semiconductor Applications Rajan Bamola Paul Robinson Origin of Productivity Losses in Etch Process Aggressive corrosive/erosive plasma used for etch Corrosion/erosion
More informationSynthetic antiferromagnet with Heusler alloy Co 2 FeAl ferromagnetic layers
Synthetic antiferromagnet with Heusler alloy Co 2 FeAl ferromagnetic layers X. G. Xu, D. L. Zhang, X. Q. Li, J. Bao, Y. Jiang State Key Laboratory for Advanced Metals and Materials, School of Materials
More informationUTILIZATION OF ATMOSPHERIC PLASMA SURFACE PREPARATION TO IMPROVE COPPER PLATING PROCESSES.
SESSION 14 MATERIALS AND PROCESSES FOR ADVANCED PACKAGING UTILIZATION OF ATMOSPHERIC PLASMA SURFACE PREPARATION TO IMPROVE COPPER PLATING PROCESSES. Eric Schulte 1, Gilbert Lecarpentier 2 SETNA Corporation
More informationX-RAY DIFFRACTION CHARACTERIZATION OF MULTILAYER EPITAXIAL THIN FILMS DEPOSITED ON (0001) SAPPHIRE
The Rigaku Journal Vol. 13/No. 1/ 1996 CONTRIBUTED PAPERS X-RAY DIFFRACTION CHARACTERIZATION OF MULTILAYER EPITAXIAL THIN FILMS DEPOSITED ON (0001) SAPPHIRE THOMAS N. BLANTON AND LIANG-SUN HUNG Imaging
More informationCu(In,Ga)Se 2 FILM FORMATION FROM SELENIZATION OF MIXED METAL/METAL-SELENIDE PRECURSORS
Cu(In,Ga)Se 2 FILM FORMATION FROM SELENIZATION OF MIX METAL/METAL-SELENIDE PRECURSORS Rui Kamada, William N. Shafarman, and Robert W. Birkmire Institute of Energy Conversion University of Delaware, Newark,
More informationLawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Correlation between Microstructure and Mechanical Properties of TiC Films Produced by Vacuum arc Deposition and Reactive
More informationA Novel Method for Low-Resistivity Metal-Interconnection by Using Metallic Functional Liquids and Catalytically Generated Hydrogen Atoms.
A Novel Method for Low-Resistivity Metal-Interconnection by Using Metallic Functional Liquids and Catalytically Generated Hydrogen Atoms. Journal: 2011 MRS Fall Meeting Manuscript ID: Draft Manuscript
More informationGrowth of SiC thin films on graphite for oxidation-protective coating
Growth of SiC thin films on graphite for oxidation-protective coating J.-H. Boo, a) M. C. Kim, and S.-B. Lee Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea S.-J. Park and J.-G.
More informationSILICON carbide (SiC) is one of the attractive wide band
1362 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 32, NO. 3, JUNE 2004 Magnetically Enhanced Inductively Coupled Plasma Etching of 6H-SiC D. W. Kim, H. Y. Lee, S. J. Kyoung, H. S. Kim, Y. J. Sung, S. H. Chae,
More informationSelective atomic layer deposition of zirconium oxide on copper patterned silicon substrate
Selective atomic layer deposition of zirconium oxide on copper patterned silicon substrate Jaya Parulekar, Department of Chemical and Biological Engineering, Illinois Institute of Technology, Chicago,
More informationJ. Mater. Sci. Technol., 2010, 26(11),
J. Mater. Sci. Technol., 2010, 26(11), 1016-1020. Effects of Current Density on the Microstructure and the Corrosion Resistance of Alumina Coatings Embedded with SiC Nano-particles Produced by Micro-arc
More information4. Thermal Oxidation. a) Equipment Atmospheric Furnace
4. Thermal Oxidation a) Equipment Atmospheric Furnace Oxidation requires precise control of: temperature, T ambient gas, G time spent at any given T & G, t Vito Logiudice 34 4. Thermal Oxidation b) Mechanism
More informationSynthesis and Characterization of SiO 2 Nanowires Prepared from Rice Husk Ash
Journal of Metals, Materials and Minerals, Vol.19 No.2 pp.33-37, 2009. Synthesis and Characterization of SiO 2 Nanowires Prepared from Rice Husk Ash Supakorn PUKIRD 1*, Pattanasuk CHAMNINOK 1, Supon SAMRAN
More informationDEPOSITION OF Al 2 O 3 ON CERAMIC SUBSTRATES BY PECVD METHOD. Lucie Špirková a Vlastimil Brožek a Jean Durand b
DEPOSITION OF Al 2 O 3 ON CERAMIC SUBSTRATES BY PECVD METHOD Lucie Špirková a Vlastimil Brožek a Jean Durand b a) Institute of Chemical Technology, 166 28 Prague, Czech Republic b) Laboratoire des Matériaux
More informationSpray Drying Method for Large-Scale and High. Performance Silicon Negative Electrodes in Li-ion. Batteries
SUPPORTING INFORMATION Spray Drying Method for Large-Scale and High Performance Silicon Negative Electrodes in Li-ion Batteries Dae Soo Jung, Tae Hoon Hwang, Seung Bin Park, and Jang Wook Choi,,* Graduate
More informationFABRICATION ENGINEERING MICRO- NANOSCALE ATTHE AND. Fourth Edition STEPHEN A. CAMPBELL. of Minnesota. University OXFORD UNIVERSITY PRESS
AND FABRICATION ENGINEERING ATTHE MICRO- NANOSCALE Fourth Edition STEPHEN A. CAMPBELL University of Minnesota New York Oxford OXFORD UNIVERSITY PRESS CONTENTS Preface xiii prrt i OVERVIEW AND MATERIALS
More information1 Thin-film applications to microelectronic technology
1 Thin-film applications to microelectronic technology 1.1 Introduction Layered thin-film structures are used in microelectronic, opto-electronic, flat panel display, and electronic packaging technologies.
More informationTechnology. Semiconductor Manufacturing. Hong Xiao INTRODUCTION TO SECOND EDITION SPIE PRESS
INTRODUCTION TO Semiconductor Manufacturing Technology SECOND EDITION Hong Xiao TECHNISCHE INFORMATIONSBiBUOTHEK UNIVERSITATSBIBLIOTHEK HANNOVER SPIE PRESS Bellingham,Washington USA Contents Preface to
More informationThermal Annealing Effects on the Thermoelectric and Optical Properties of SiO 2 /SiO 2 +Au Multilayer Thin Films
American Journal of Materials Science 2015, 5(3A): 31-35 DOI: 10.5923/s.materials.201502.05 Thermal Annealing Effects on the Thermoelectric and Optical Properties of SiO 2 /SiO 2 +Au Multilayer Thin Films
More informationVacuum Equipment for TCO and AR Coatings Deposition by Reactive Magnetron Sputtering
Vacuum Equipment for TCO and AR Coatings Deposition by Reactive Magnetron Sputtering E. Yadin; V. Kozlov; E. Machevskis, Sidrabe, Inc., 17 Krustpils str.,riga, LV1073, Latvia. Tel: +371 7249806, Fax: +371
More informationPreparation and structural characterization of thin-film CdTe/CdS heterojunctions
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Vol. 8, No., June 006, p. 96-940 Preparation and structural characterization of thin-film CdTe/ heterojunctions I. SALAORU a, P. A. BUFFAT b, D. LAUB b,
More informationLinear Plasma Sources for Surface Modification and Deposition for Large Area Coating
Linear Plasma Sources for Surface Modification and Deposition for Large Area Coating Dr Tony Williams Gencoa Ltd, UK Victor Bellido-Gonzalez, Dr Dermot Monaghan, Dr Joseph Brindley, Robert Brown SVC 2016,
More informationSession 1A4a AC Transport, Impedance Spectra, Magnetoimpedance
Session 1A4a AC Transport, Impedance Spectra, Magnetoimpedance Magneto-impedance of [Co 40Fe 40B 20/Cu] Multilayer Films S. U. Jen, T. Y. Chou, C. K. Lo,.................................................................
More informationRightCopyright 2006 American Vacuum Soci
Title Gallium nitride thin films deposite magnetron sputtering Author(s) Maruyama, T; Miyake, H Citation JOURNAL OF VACUUM SCIENCE & (2006), 24(4): 1096-1099 TECHNOL Issue Date 2006 URL http://hdl.handle.net/2433/43541
More informationOUTLINE. Preparation of III Nitride thin 6/10/2010
Preparation of III Nitride thin films for LEDs Huaxiang Shen Supervisor: Dr. Adrian Kitai 1 2 Two kinds of EL devices Light emitting diodes Powder EL and thin film EL http://en.wikipedia.org/wiki/file:pnjunction
More informationAnnealing Effect on Elastic Constant of Ultrathin Films Studied by Acoustic-Phonon Resonance Spectroscopy
1st International Symposium on Laser Ultrasonics: Science, Technology and Applications July 16-18 28, Montreal, Canada Annealing Effect on Elastic Constant of Ultrathin Films Studied by Acoustic-Phonon
More informationSynthesis and Evaluation of Electrocatalysts for Fuel Cells
Synthesis and Evaluation of Electrocatalysts for Fuel Cells Jingguang Chen Center for Catalytic Science and Technology (CCST) Department of Chemical Engineering University of Delaware Newark, DE 19711
More informationThin AC-PDP Vacuum In-line Sealing Using Direct-Joint Packaging Method
H128 0013-4651/2004/151 5 /H128/5/$7.00 The Electrochemical Society, Inc. Thin AC-PDP Vacuum In-line Sealing Using Direct-Joint Packaging Method Duck-Jung Lee, a,b,z Seung-IL Moon, a Yun-Hi Lee, c and
More informationDevelopment of different copper seed layers with respect to the copper electroplating process
Microelectronic Engineering 50 (2000) 433 440 www.elsevier.nl/ locate/ mee Development of different copper seed layers with respect to the copper electroplating process a, a a b b b K. Weiss *, S. Riedel,
More informationInvestigation of overpotential and seed thickness on damascene copper electroplating
Surface & Coatings Technology 200 (2006) 3112 3116 www.elsevier.com/locate/surfcoat Investigation of overpotential and on damascene copper electroplating K.W. Chen a, Y.L. Wang b, *, L. Chang a, F.Y. Li
More informationInterreactions of TiAl 3 Thin Film on Bulk -TiAl and on Bulk 2 -Ti 3 Al Alloys at C
Materials Transactions, Vol. 5, No. () pp. 19 to 19 # The Japan Institute of Metals Interreactions of Thin Film on Bulk -TiAl and on Bulk -Ti 3 Al Alloys at 7 1 C Min-Sheng Chu and Shyi-Kaan Wu* Department
More information