Nanoimaging and metrology of Nanopatterns under Opaque layers Using Subsurface Ultrasonic Resonance Force Microscopy

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1 TechARENA: Metrology M. Pfeffer Group Manager Fraunhofer IISB, Manufacturing Control, Erlangen, Germany Biography Dr. Markus Pfeffer (M): holds a diploma in Electrical Engineering and a PhD (Dr.-Ing.) with specialization in manufacturing optimization both from the University of Erlangen- Nu-remberg. Since 2002 he is with Fraunhofer IISB in the department Semiconductor Manufac-turing Equipment and Methods. He is leading the group Manufacturing Control with a strong focus on equipment control, contamination control, manufacturing optimisation, equipment assessment and discrete event simulation. He was/is involved in several national and interna-tional cooperative R&D projects, e. g. FLYING WAFER, PULLNANO, IMPROVE, EEMI450, SEA-NET, SEAL, NEREID, EuroCPS and SEA4KET in a variety of functions. Nanoimaging and metrology of Nanopatterns under Opaque layers Using Subsurface Ultrasonic Resonance Force Microscopy H. Sadeghian Principal Scientist TNO, Delft, Netherlands Nondestructive subsurface nanoimaging of buried nanostructures is considered to be extremely challenging and is essential for the reliable manufacturing of nanotechnology products such as three-dimensional (3D) transistors, 3D NAND memory, and future quantum electronics. In this talk, the development of a subsurface nanoimaging technique, called subsurface ultrasonic resonance force microscopy (SSURFM) is reported. The capability and versatility of this method is demonstrated by the subsurface imaging of various samples including rigid structures buried under a soft matrix, rigid structures buried under multiple opaque layers, and rigid structures under a rigid matrix. The experimental results provide possible new industrial metrology and inspection solutions for nanostructures buried below the surface and through optically nontransparent layers. Dr. Hamed Sadeghian received his PhD (Cum Laude) in 2010 from Delft University of Technology. He then continued his career as a Postdoctoral fellow, where he developed several sensing and instrumentation method.

2 He is currently a Principal Scientist at TNO, leading the program NOMI (Nano-Optomechatronics Instrumentations) and the research program 3D nanomanufacturing Instruments at TNO. In 2014 he also received his MBA degree from Leuven Vlerick Business School, Belgium. Dr. Sadeghian holds more than 40 patents, and has authored more than 60 technical papers and co-authored a book. He is a member of editorial advisory board of Sensors & Transducers Journal. He is also a member of technical committee of SENSORDEVICES conference since 2010 till present. He is also a recipient of several best paper awards. In 2012 he was awarded as TNO excellent researcher.

3 Next generation metrology obstacles will be overcome by MDM (Multi- Dimension Metrology) Y. Uziel Tecnnology Director Applied Materials, IPC / PDC, Rehovot, Israel The metrology equipment developers need to prepare new technologies to deal with the following major issues: - A need to accurately measure objects of just a few nanometers with sub 1 nanometer accuracy - An ability to extract signals from under-layers to reveal hidden defects and to characterize hidden elements in the upcoming, complex 3D structures - An ability to detect materials with a small sample, having a sensitivity of just a few atoms In addition to the above requirements, our metrology equipment need to perform this task at an acceptable throughput X CoO (cost of ownership) The MDM concept will be assessed in a few consortia. The idea is to overcome the difficult requirements by smart, rapid metrology data collection, from both in-line and off-line equipment, in order to generate a reliable process control indication which will comply with nano-electronic production requirements. The lecture will describe the difficulties and possible paths to the solution. Yoram Uziel is a technology Director at Applied Materials, IPC/PDC group. He has a BsC in mechanical engineering and an MsC in business management. Yoram has more than 30 years of semiconductor metrology equipment experience and more than 20 related patents.

4 Hybrid Metrology 2.0: From Metrology to Information Technology A. Ger VP, Strategic Partnership Programs Nova Measuring Instruments, Rehovot, Israel As semiconductor device architectures have become more complex, with ever-tightening process control requirements, metrology solutions have become more resourceful and innovative. One such solution has been hybrid metrology, which has been defined as the practice of combining measurements from multiple equipment types in order to enable or improve measurement performance. But with advancements not only in metrology, but also computing and machine learning, the combining of data from multiple sources has quickly grown in terms of its sophistication, as well as its benefit to the end-user. Thus, it seems increasingly appropriate that the definition of hybrid metrology be expanded to the practice of combining data from multiple sources of information in order to improve measurement performance. With this interpretation, we present several hybrid metrology solutions that have been developed with leading semiconductor device manufacturers to solve some of their most challenging applications. These solutions utilize hybrid techniques that range from conventional hybrid metrology between scatterometry and X-ray based metrologies, to more diversified hybrid methods that rely on information from the complex geometry of the structure, machine learning, and other advanced computing technologies. Collectively, these next-generation hybrid methods enable the solution of many applications that were previously beyond the reach of metrologists best methods. In this work, such applications, along with their innovative solutions, will be documented. The flexibility of the hybrid methods applied to both front-end and back-end applications will also be made evident. B.Sc. in electronic engineering from the Technion Israel Institute of Technology More than 21 years of experience in the semiconductor industry, including product development, service and application, mainly in Process control related positions. Held several management positions in Nova, including US service management, Product and algorithms development, and the world wide application group management Leads Strategic cooperation activities and joint development programs with customers, partners and research centers.

5 X-ray Metrology: Challenges and Solutions in the 3D era J. van der Meer Head of X-ray Application Development Bruker, Semiconductor, Karlsruhe, Germany X-rays are non-contacting, non-destructive and suitable to probe 3D nanoscale features. Therefore, X-ray metrology is used in multiple processing steps for finfet logic and 3D memory structures, providing information on critical dimensions, film thickness, strain and composition. High Resolution XRD (HRXRD) works from first principles and thus no standards are needed. It is a powerful technique to determine strain in epitaxial layers. Microspot measurements are enabled by the latest advances in brilliant small spot X-ray sources and detector technology. µxrf is a volumetric method. It measures atoms, regardless the complexity of the shape. It is capable to measure the thickness of (ultra-)thin films and also the sidewalls around fins. Crystalline defects in the substrate can cause cracks and slip. The latter is problematic and may lead to yield loss, because the overlay budget is continuously decreasing due to multiple patterning schemes. Cracks can eventually cause wafer breakage. XRD Imaging (XRDI) detects defects through the wafer. Bruker offers metrology platforms for all introduced X-ray technologies. Juliette holds a MSc in Geochemistry direction igneous petrology (2003) and a PhD in Thermodynamics on molten nuclear fuel salts (2006) from Utrecht University, Netherlands. Then she took a swing. Via a post-doctoral research project on porous silica using various X-ray measurement techniques at CEA Marcoule in France she moved to the field of X-ray metrology for semiconductors in which she works since : Bruker AXS, Karlsruhe, Germany. Application scientist XRF and thin film metrology 2015-present: Bruker Semiconductor, Karlsruhe, Germany. Head of X-ray Application Development and Product Manager TXRF

6 FD-SOI film-thickness metrology S. Braun project/product leader HSEB Dresden, Dresden, Germany The newly evolving technology of building transistors superior in speed and/or power consumption on fully depleted silicon on insulator wafers (FD-SOI) is well known to be critical dependent on film thickness homogeneity of the silicon and BOX layer used. These transistors compete with the early FINFET or if combined with it makes its production easier while boosting FINFET performance to even higher parameters at the same time. The threshold voltage of a FD-SOI transistor is reported to depend with 25 mv/nm on a nominal 8.5 nm thick silicon SOI film thickness (Khafikirooz et al, 2010). Hence, in order to gain the full benefit of the FD-SOI technique the silicon film thickness and its homogeneity needs to be tightly controlled during wafer and chip manufacturing. Any thickness variation makes the low voltage operation worse by dictating to run the chip at the voltage level of the worst transistor. We present a metrology technique in shape of an AOI tool dedicated to this purpose. The system combines the extreme thickness resolution and accuracy of sub-angström range with the needed high spatial resolution and a production worthy wafer throughput. The lateral resolution can be adjusted by recipe parameters to the user needs from full wafer overview to sub-micron resolution. We use an all optical method with special emphasis on high reliability and reproducibility. Results of the tool performance checks like reproducibility and accuracy are reported. Measurement results are presented for a range of production wafers. The tool is a new part of HSEB s field proven modular tool platform for fully automated inspection and metrology applications. Thus, it can run fully automatic as well as in a manual mode and incorporates all automation requirements in a SEMI conform manner. Sebastian Braun did his master degree in Mechatronic (deepening: Simulation and Control) at the Technical University Darmstadt in After participating as product developer in different minor medical and automation projects, in 2014 he was promoted to leadership of a comprehensive redevelopment project of a cable manufacturing machine. After completion of alpha and beta phase, he changed to HSEB and assumed the product management of BALDUR platform in 2016.