What can you do with the NSOM Failure analysis of microchips and chemically mechanically polished microchips

Transcription

1 What can you do with the NSOM Failure analysis of microchips and chemically mechanically polished microchips (i) Generate carriers locally using optical capabilities of NSOM without need for electrical connections. (ii) Light emission from working devices. (iii)kelvin probe measurements with and without light injection. (iv) Contact potential difference or photovoltage measurements with optical capabilities of NSOM tips and significantly reduced metallic cantilever electrical effects due to the distance approx. 100 microns of the tip from the cantilever. Additionally, the NSOM tip resolves the problem of illumination, which conventional AFM cantilevers not only cannot accomplish but also, conventional AFM cantilevers obscure the tip which sits under an opaque material. Thus no conventional upright microscope can be used for viewing the exact position of the tip. In addition all such AFM cantilevers require illumination of the optical axis from above and therefore there is no AFM except the Nanonics AFM/NSOM 100 that can be placed on a conventional upright microscope, e.g. a probe station (v) Capacitance measurements of gate oxide leakage and dopant concentration. (vi) Direct correlation of all of the above and direct registration of simultaneously obtained near-field optical images and AFM images that clearly show that the oxide layers have not been removed and that the NSOM and simultaneous electrical measurements are looking at the structure beneath the overlying oxide, i.e. have been made through the oxide layer. (vii) Simultaneous Fowler-Nordheim oxide thickness measurements exactly overlapped with oxide surface structure using AFM and the underlying layer using NSOM. (viii) Simultaneous NSOM resistivity measurements e.g. correlating resistivity in the titanium saliside layer with overlaid NSOM optical imaging or pn junction resistance with optical imaging through an oxide. (ix) Correlation of resistivity and optical reflectivity of surfaces (x) Correlation of capacitance, optical reflectivity and AFM at the same resolution e.g. gate oxide leakage, ensuring the leakage is through an oxide layer and not just surface exposure. 2. Polymer Imaging (NPLM-Near-field Polarized Light Microscopy) (i) NPLM characterization of polymer microdomain structures; correlation with polymer chemistry (ii) Simultaneous far-field polarized light confocal microscopy, and with NPLM additional data on polymer topography and elasticity [This category of simultaneous imaging can be done by no AFM system today. All of these systems which use silicon cantilevers block the point at which the tip is interacting with the sample and therefore no optical imaging can be done at the tip. In addition, no lens can be brought above the tip for the far-field transmission polarized light microscopy because the feedback of silicon cantilevers requires the z control light beam mechanism to be brought directly above the cantilever for all other AFM systems. For our information an

2 important aspect of polymer microdomain structure is the fact that it is related to polymer crosslinking which is a very important parameter in polymer chemistry and physics. 3. Telecommunication and Optoelectronic devices (i) Waveguides semiconductor diode lasers, microlasers, semiconducting polymers and solid state materials measuring optical distribution of light and mode structure at different emission wavelengths of waveguides and micro lasers and correlating this with electrical properties of the device, both on a macro scale and on a micro scale by using the NSOM tip for monitoring optical distribution and carrier distribution and injected charge (See also 18). In addition measuring the thermal distribution in the device. (ii) Electric optical switching devices (iii) Polymer electro-luminescence either collect or inject and measure electrical properties of such materials and devices made of such materials (see also 18) (iv) Porous silicon (as in a and b) (v) Gallium Nitride lasers (as in a and b) in addition see nano-etching of such lasers in no. 11 (vi) Electro-optically active crystals-measuring light-distribution on a function of electrical injection of charge. (vii)optical fiber and optical waveguide switches characterization. 4 Applications in Bacteriology (i) Staining nucleic acids proteins in bacteria and measuring distribution of specific proteins and DNA and RNA in bacteria. (ii) Bacterial imaging without staining using specific laser wavelengths for example in the DNA absorption at 266nm. (iii)correlation a and b with the bacterial life cycle. (iv) Bacterial of virulence e.g. altered DNA distributions. 5 3D Optical microscopy/nsom/afm combination (i) Correlating a CCD digital optical image or a confocal image or a non-linear optical image through a microscope with NSOM and AFM data at specific points as super-resolution constraints for mathematical deconvolution algorithms and using these few NSOM and AFM data points to rapidly deconvolve the whole 3D optical image at resolutions that are unachievable with lens-based far field microscopy. 6 Biotechnology

3 (a) AFM based topographic structure and simultaneous NSOM chemical structure identification by optical staining. On-line correlation of all this data with far field optical images. (ii) Dissection of specific regions of chromosome correlated with (a) and sequence identification of these regions by the application of PCR technology. (iii)relationship of mechanics of specific regions using AFM capabilities with optical imaging (NSOM and far field) of stained DNA and the dissected chemical structure. (iv) Investigation of the nature of fragile sites. 7 Laser tweezer/ AFM combination Correlating simultaneously, laser tweezer forces with AFM detected forces in nano-regions. 8 Gold or silver balls immuno-labeling antibody attachment to specific proteins. Competitive use of NSOM instead of electron microscopy in pathology laboratories and in investigations of gold and silver labelled biological tissue and sectioned biological tissue such as brain slices for monitoring neuronal interconnections. Also live tissue investigations with such staining is possible. 9 Optical ion sensing (i) Ion sensing around of membrane channels with NSOM and force sensing of simultaneous sub-nanometer protein movements and membrane movements. (ii) NSOM/Ion conductance/afm (þ à) NSOM focal uncaging of nurotransmitters and other molecules for the investigation of synaptic function and plasticity. (þ á) Ion conductance using a multi-channel AFM sensing optical fiber/hollow pipette probe for simultaneous loose patch clamp of membrane ion conductivity, channel movement and optical signals such as fluorescence of fusing synaptic vesicles, local fluorescence of near membrane, intracellular ion sensing dyes. (þ â) Full correlation of all of the above with far field optical confocal or non-linear optical fluorescence imaging and evanescent wave microscopy. 10 Fountain Pen Force sensing applications (i) Chemical writing with cantilevered hollow single or dual channel nanopipettes. (ii) selective etching with gases or liquids. (iii) flat panel display correction.

4 (d) Tribology with specific lubricants in the fountain nanosensor monolayer deposition. (e) Crystal growth with mother liquor in one channel and ion sensing in the other channel using NSOM (connected with number 9). In crystal growth it is crucial to know the ionic environment at and above a specific crystal plane as it grows, this is an essential element in understanding the underlying mechanisms that lead to crystal growth. When this is coupled to the ability of the chemical sensors (also manufactured by Nanonics) to measure surface forces one has a multidimensional view of crystal growth that has never been achievable before. This should lead to new views of how crystals grow and how to coax the growth of crystals from those associated with small molecular systems to biological macrmolecules. (v) lipid deposition in specific membrane domains with lipid tip coated/force sensing cantilevered micropipettes. (f) simultaneous capillary electrophoretic delivery of chemicals to cells together with AFM sensing. 11 Photoresist exposure in the UV, deep UV (193nm) and ultra deep UV (157nm) for photoresist development and characterization in the microelectronics industry 12 Data Storage applications (a) magneto optic investigations. (iii)making structures for data storage investigation/ etching (see etching above connected with 10(a)(i)). (iv) Optical / AFM integration - optical alterations with AFM detection. 13 NanoRaman, nano IR, nano- two photon and nano-second harmonic spectroscopy Apertureless enhancement in nanoregions with unique glass cantilevers nanotipped with a silver particle of controlled size from 2nm to 100s of nms. 14 Nano aperture base infra red application (i) Local heating for micro soldering. (ii) Collection of infrared light for monitoring distributions of quantum cascade lasers (see also 2 above) and correlation with electrical properties of such lasers. (iii)molecules vibrational spectral imaging of single molecules and their films. 15 Thermal sensing cantilevered tips with optical sensing 16 Scanning electro-chemical microscopy

5 Electrochemical applications with unique cantilevered electrochemical glass tips with simultaneous electro-chemical and near-field optical imaging with multichannel force sensing cantilevered tips. Fully correlated with far-field optical microscopy. 17 Ultra-fast laser spectroscopy and surface modifications (see also no. 2 above) (i) femto-second pulse delivery in nano-regions (ii) pump-probe spectroscopy for example, carrier injection in semiconductors together with force sensing techniques (iii)femto-second lithography of metals and metallic structures without associated heating 18 Monitoring optically induced dynamic structural alterations with the microsecond time resolution AFM capability of glass cantilevers of proteins, membranes, chalcagonides, etc Florescence NSOM/confocal imaging (i) single molecules, nanocrystals and thin films with and without imposed forces, electrical fields etc. (ii) cellular florescence imaging 20. Can make Ag Br on Mica on which You absorb molecules/ In regular films have Ag Br in gel and with the dye and the micro optical charac-teristics in this real medium have not been done & needs to be known The process is that the dye elec is excited and this neutralizes a Ag ion Cu TB PPContinuous Strong & Short Sample bias v +2 to to 10 Current n A + O'05 to to 10 Organic Led-

6

7 21. Need for our technology in DNA Chips 1. Writing closer together to get multiple tests on one small array 2. Reading closer together in air this is like spectroscopy of Q Dot that Could be deconvolved with a CCD and additional NSoM information 22. NEC Low temp quotation with cryostat and drawing of LT system Hitachi Need proposal

8 He wants to combine Nsom and confocal to look at 3 D distribution of carriers and defects at higher z distribution Need to add this to use of Confocal that is being increasingly employed in semiconductor characterization The above is for Kimihiko It0 who presently uses our straight probes for illumination and detection Need to send him 2 lensed probes with high throughput for 325 nm. His excitation is 325 and emission is 400 nm. Low temp is used for two reasons 1, the diffusion of the defect is not as large at low temp than at room temperature 2. Also at low temp the optical absorption and emission is very sharp and more intense so there is more sensitivity and accuracy in the measurement 3. In terms of the flat Scanner it allows us to build a low temperature Nsom and AFM that can be Connected to the optical microscope so one Can view the sample and place the tip over what-looks like a defect using inertial motion 4. Also the defect can be in 3 dimensions and the flatscanner allows Confocal optical sectioning to be

9 Combined with Nsom and to separate Surface defects from defects deep in the structure 5. Also with two scanners Can move the sample under view of optical microscope and then the sample can be Cooled. Once it is Cooled the piezos have a Very limited range. The tip however is not at low temperature and So it can be Scanned normally. 23. The Nanonics AFM / Nsom 100 A 157 and 193 nm Excimer Laser Photoresist Exposure Tool For This And Next Generation Micro Lithography For next generation lithography the AFM/NSOM-100 of Nanonics can be used in 157 and 193 nm photoresist development. Exposure of the Photoresist is accomplished with the Nanonics AFM/NSOM 100 through Nanonics patented Cantilevered tapered optical fiber probe with a 50 nm metal Coated aperture at the tip. This probe Can pass radiation at 157 nm emitted by the fluorine excimer laser, at 193nm by the Argon fluoride excimer laser and at 248 nm by the Krypton fluoride excimer laser with an optical resolution of down to 50 nm. The exposed area is now photo chemically altered and that is seen below as a clear region in the diagrammatic representation below. There is then development of the photochemically altered regions and this is indicated below The AFM/ Nsom loo can then characterize the result both

10 With near-field optics in terms of the optical characterization and with AFM the profile of the resulting developed feature. Nanonics can also provide specialized glass tips with the following structure for profiling accurately the resulting exposed and developed Structures. The Nanonics balloon tip is ideal for such characterization