450mm Metrology and Inspection: The Current State and the Road Ahead. Rand Cottle (CNSE), Nithin Yathapu (GF), Katherine Sieg (Intel)
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1 450mm Metrology and Inspection: The Current State and the Road Ahead Rand Cottle (CNSE), Nithin Yathapu (GF), Katherine Sieg (Intel)
2 Outline Program Update Demonstration Testing Method (DTM) Equipment Performance Metric (EPM) Test Wafer Strategy 450mm Metrology Tool Readiness Factory Automation Current Measurement Precision Proposed Standards Summary
3 Program Update DTM changed from 14nm to <10nm demonstration testing. Equipment Performance Metrics (EPM) being updated to included <10nm HVM targets. Initial baseline testing shortened to allow for longer CIP. DTM schedule shifted from to
4 New DTM Timeline
5 Outline Program Update Demonstration Testing Method (DTM) Equipment Performance Metric (EPM) Test Wafer Strategy 450mm Metrology Tool Readiness Factory Automation Current Measurement Precision Proposed Standards Summary
6 DTM Schedule Model: Metrology Tools
7 G450C Test Levels vs. Traditional Product Development
8 Outline Program Update Demonstration Testing Method (DTM) Equipment Performance Metric (EPM) Test Wafer Strategy 450mm Metrology Tool Readiness Factory Automation Current Measurement Precision Proposed Standards Summary
9 EPM Revision - Preliminary Targeted Device Dimension and Basic Generic Rules Items 14nm < 10nm Module FIN/STI Full Pitch 42nm (Fin 10nm) 24nm (Fin 8nm) Contact CD 20nm (AR 10:1) 10nm (AR 10:1) Poly Full Pitch* 42nm (Line AR 5:1) 24nm (Line AR 5:1) BEOL Trench Full Pitch 54nm (Trench AR 3:1) 26nm (Trench AR 3:1) Generic Items PWP Particle Size > 30nm > 21nm PWP Backside Particle 50nm 50nm Basic Total Variability* < 3.0% < 2.1% Basic Target Thickness 100% 70% Basic Geometry to meet pitch shrink *Total Variability TT = III 2 + WWW 2 + LLL 2
10 Outline Program Update Demonstration Testing Method (DTM) Equipment Performance Metric (EPM) Test Wafer Strategy 450mm Metrology Tool Readiness Factory Automation Current Measurement Precision Proposed Standards Summary
11 Test Wafer Strategy 193i lithography begins virtually in Q On-site at G450C Q Immersion lithography will be used for guide patterns. Directed self assembly (DSA) will be use to construct most of the <10nm design rule structures. 100 kev e-beam lithography will be used to patterning requirements not met by DSA, like programmed defect arrays for inspection sensitivity demonstrations.
12 Outline Program Update Demonstration Testing Method (DTM) Equipment Performance Metric (EPM) Test Wafer Strategy 450mm Metrology Tool Readiness Factory Automation Current Measurement Precision Proposed Standards Summary
13 450mm Metrology Tool Availability SE/OCD Tool Type Status Application Thickness -operational on-site OCD-Ready to measure Dielectric or thin metal films thickness and stress 4Pt Probe Operation on-site Sheet resistance 3DAFM Operation on-site Nanotopography, pattern CD and depth, reference metrology TXRF Operation on-site Metallic contamination XRR/XRF Opaque Film Thickness Overlay Operation on-site 1 tool ready to measure, 1 onsite Q Metal thickness, roughness, and density litho overlay: DBO and IBO AMC Analyzer On-site Q Outgassing of wafers and carriers, FOUP clean qual CD-SEM Virtual Q3 2014, On-site Q ADI and AEI pattern CD Advanced Wafer Geometry Operational Supplier's Site SFQR,ERO, GBIR, nanotopography
14 450mm Inspection Tool Availability Tool Type Status Application Macro Inspection Operation on-site Macro defect inspection (blanket and patterned), front and backside, EBR and bevel etch. Defect Review SEM Operation on-site Defect imaging and EDS, pattern CD Bare Wafer Particle 2 tools operational on-site Bare Si and films particle inspection Inspection BF Inspection Supplier's Site Q Patterned wafer inspection Metro and inspection recipes setup and running for a wide range of film stacks, including SiN, a-si, poly, Oxide (native, thermal and CVD), TiN, Ta, TaN, W, Cu (PVD and ECP), Co, Al, ACL, SiCN, OPL, PR, ULK.
15 Factory Automation SECS/GEM hasn t changed from 300mm to 450mm Most M&I tool running under fully automated MES host control and data collection. Remaining M&I tools will be fully automated by Q
16 Measurement Precision vs EPM Targets Tool Type Measurement Type Current 3σ <10nm EPM 3σ 1.5mm EE Ready? Particle count - 30nm silica Bare Wafer Particle Inspection spheres ~1% <2% (10nm spheres) yes Spectroscopic Ellipsometry Dielectric Film Thickness <0.1% <0.1% yes X-ray Fluorescence Metallic Film Thickness <1.5% <0.2% TBD CD-AFM Critical Dimension <1nm TBD TBD 4-Point Probe Sheet Resistance <0.5% TBD TBD
17 Outline Program Update Demonstration Testing Method (DTM) Equipment Performance Metric (EPM) Test Wafer Strategy 450mm Metrology Tool Readiness Factory Automation Current Measurement Precision Proposed Standards Summary
18 Proposed Standards Edge exclusion reduction from 2mm to 1.5mm Gauge studies are being conduction with 1.5mm EE Process tool DTM data will be collected at 1.5mm EE Notchless wafers Notch to be replaced with 3 sets of laser marked fiducials on the backside. First full notchless compatible inspection tool to arrive Q Retrofitting of current 450mm M&I tools to begin Q
19 Outline Program Update Demonstration Testing Method (DTM) Equipment Performance Metric (EPM) Test Wafer Strategy 450mm Metrology Tool Readiness Factory Automation Current Measurement Precision Proposed Standards Summary
20 Summary Twelve 450mm metrology and inspection tools up and running at G450C. Four more M&I tools will be installed on-site by Q Gauge studies are underway for unpatterned wafer M&I. Patterned wafer M&I will begin Q
21 Thank You!
22 Notch Replacement Laser Marks
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