EQ-10 EUV Source for Actinic Defect Inspection Panel Discussion. Debbie Gustafson

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1 EQ-10 EUV Source for Actinic Defect Inspection Panel Discussion Debbie Gustafson ENERGETIQ 7/16/2009

2 Agenda Background on the EQ-10 Electrodeless Z-Pinch TM EUV source Detailed characterization of the EQ-10 for metrology applications Brightness of EQ-10 Improved Brightness Plans Beamline Design 2009 International Workshop on EUV Lithography 7/16/30/09 2

3 Key Requirements for a Metrology Source High Brightness Excellent Spatial Stability High Pulse-Pulse Stability Clean Photons High System Reliability 2009 International Workshop on EUV Lithography 7/16/30/09 3

4 EQ-10 Source Introduced in nm ±1% Power in 2π 10W continuously 13.5nm ±3.5% Power in 2π 20W continuously Broadband EUV (11-15nm) >50W continuously Operates continuously for days and weeks 2009 International Workshop on EUV Lithography 7/16/30/09 4

5 Electrodeless Z-Pinch Induced High Current Pulse Z-Pinched Plasma Inductively Coupled Gas Plasma (Xe) Magnetic Field Inductive design eliminates electrodes and electrode current Plasma is magnetically confined away from source components and pinned electromagnetically to the geometric center of the bore 2009 International Workshop on EUV Lithography 7/16/30/09 5

6 Status of Current Installations Shipped over 15 sources in the field Installations in Japan, Europe and US Systems being operated 24/7 with minimal downtime One system has many 10s of billions of pulses at 2kHz at 24/7 operation Systems integrated into tools for research and development Actinic Inspection Resist Outgassing Optics Testing 2009 International Workshop on EUV Lithography 7/16/30/09 6

7 Initial EUV Source Brightness Requirements* Tool/ Supplier Zeiss Selete KLA Tencor Actinic Blank Inspection 50W/mm^2-sr After foil 14W/mm^2-sr Before foil AIMS 100W/mm^2-sr After foil Actinic Patterned Mask Inspection W/mm^2-sr Before foil * Source: EUV Source Workshop Baltimore International Workshop on EUV Lithography 7/16/30/09 7

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10 ENERGETIQ 7/16/2009 Detailed Characterization of the Standard EQ-10

11 EUV Power vs. Pressure In the EQ-10, for each combination of energy per pulse and repetition rate, (i.e. power input), there is an optimum pressure for maximum EUV power EUV Power [Watts/2π/2%BW] Pressure (mt) 280V 1900Hz 290V 1900Hz 300V 1900Hz 280V 2200Hz 290V 2200Hz 300V 2200Hz 2009 International Workshop on EUV Lithography 7/16/30/09 11

12 EUV Plasma Size vs. Pressure Plasma size generally decreases with increasing pressure The pressure for maximum brightness is generally not the same as the pressure for maximum power FWHM size [microns] V-1900Hz 290V-1900Hz 300V-1900Hz 280V-2200Hz 290V-2200Hz 300V-2200Hz Pressure [mt] 2009 International Workshop on EUV Lithography 7/16/30/09 12

13 Open-Loop Pulse-Pulse Stability Two methods of measuring pulse intensity stability: 1) Use oscilloscope to integrate pulses on-the-fly, recording every 40 th pulse. Record statistics for 1 hour give samples size 166K yields σ = 2.7% 2) Capture every 2kHz for 1 hour 50 pulse moving average σ = <1% 2009 International Workshop on EUV Lithography 7/16/30/09 13

14 Stability in EUV Plasma Position Image recorded once an hour for over 300 million pulses (~44hours) of continuous operation. Position then extracted from images: Position: σ x = 5.8 μm and σ y = 5.0 μm Y position [microns] FWHM ~ 400 μm X position [microns] Brightness remains constant This is open-loop stability: No feedback! 2009 International Workshop on EUV Lithography 7/16/30/09 14

15 Stability in EUV Plasma Size Image recorded once an hour for over 300 million pulses (~44hours) of continuous operation. Size then extracted from images: Size: σ FWHMx = 3.1 μm and σ FWHMy = 3.6 μm x FWHM (microns) y FWHM (microns) mean +/- 30microns 440 FWHM [m icrons] Brightness Remains Constant This is open-loop stability: No feedback! millions of pulses 2009 International Workshop on EUV Lithography 7/16/30/09 15

16 ENERGETIQ 7/16/2009 Brightness of EQ-10

17 EQ-10 in-band EUV Brightness Brightness is a function of power and radius 100% 90% 80% % power within radius 70% 60% 50% 40% 30% 20% % % radius [mm] radius [mm] 2009 International Workshop on EUV Lithography 7/16/30/09 17

18 Brightness as function of radius Standard EQ-10 8 brightness(r) [W/mm^2/sr] P= 11.2 Watts/2π; 13.5nm 2%BW F= FWHM radius 'r' [mm] 2009 International Workshop on EUV Lithography 7/16/30/09 18

19 Brightness as a function of radius New design EQ brightness(r) [W/mm^2/sr] P= 25.7 Watts/2π 13.5nm 2%BW F= FWHM radius 'r' [mm] 2009 International Workshop on EUV Lithography 7/16/30/09 19

20 ENERGETIQ 7/16/2009 Higher Brightness Source Plans

21 Reduction in Plasma Size The biggest driver in achieving a higher brightness EUV source is to maintain power within a smaller plasma The design and operation of the EQ-10 electrodeless source can be optimized to reduce the plasma diameter Pressure is a large factor in diameter of plasma Experiments have shown that changes to the bore design can mold the shape of the plasma By using both operating pressure and bore design we believe we can reduce the plasma size to <0.300 mm We consistently see plasma size below mm 2009 International Workshop on EUV Lithography 7/16/30/09 21

22 Simulated Results of Higher Brightness EQ brightness(r) [W/mm^2/sr] Watts/2π 13.5nm 2%BW mm FWHM International Workshop on EUV Lithography 7/16/30/09 22 radius 'r' [mm] Results were simulated by reducing image scaling

23 ENERGETIQ 7/16/2009 Delivering Clean Photons

24 Delivering Clean Photons Source emits: In-band desirable photons (EUV) Out-of-band photons Xenon gas (attenuates EUV, reducing delivered power) Fast ions (which can damage surfaces- true for all DPP& LPP sources) EQ-10 produces an order of magnitude fewer than conventional sources Particles (from sputtered films, etc) which can damage beamline components Already low with EQ-10 Interface between source and beam-line must remove remaining fast ions and unwanted out-of-band photons, yet still transmit desired EUV Energetiq has a new interface module with high transmission efficiency and long life 2009 International Workshop on EUV Lithography 7/16/30/09 24

25 Transmission Module Allows for filtered EUV transmission of >40% Pumping removes EUV absorbing Xe Zr or Si foil removes out of band light 20mm filter (unsupported Zr or Si) 400mm from plasma We are continuing to experiment with higher transmission filters to improve efficiency Transmission Module Zr foil (SPF) Dome Plasma pinch 2009 International Workshop on EUV Lithography 7/16/30/09 25

26 Key Requirements for a Metrology Source High Brightness Excellent Spatial Stability High Pulse-Pulse Stability Clean Photons High System Reliability 2009 International Workshop on EUV Lithography 7/16/30/09 26

27 Closing Remarks The Energetiq EQ-10 EUV source is a reliable and stable source of EUV photons. For improved brightness, plasma size can be reduced. Reduction in plasma size by 25% could allow for a source with the following characteristics Brightness of ~18W/mm^2-sr Brightness thru the debris mitigation system of >8W/mm^2-sr Continued excellent plasma and pulse-to-pulse stability 2009 International Workshop on EUV Lithography 7/16/30/09 27

28 Acknowledgements The team at Energetiq Our valued customers EUV Litho Our excellent partners and collaborators 2009 International Workshop on EUV Lithography 7/16/30/09 28

29 EQ-10 EUV Source for Actinic Defect Inspection Panel Discussion Debbie Gustafson ENERGETIQ 7/16/2009