Promotion of Nanotechnologie as a Tool of change in Niger

Transcription

1 UNIVERSITE DE MARADI UNIVERSITE DAN DICKO DANKOULODO DE MARADI FACULTE DES SCIENCES ET TECHNIQUES DEPARTEMENT DE PHYSIQUE Promotion of Nanotechnologie as a Tool of change in Niger Present by Dr HAMIDINE Mahamadou at Nanosafety Technical workshop Lusaka, 16-17th April 2015

2 Educational level Teaching undergraduate students courses related nanotechnology (Solid-state physique, Physique of semiconductors, Photovoltaic devices..) Teaching postgraduate students courses (Wide band gap semiconductor materials and devices) Performing laboratory experiments on LEDs particularly how to get white LED from grouping the three colors red, green and blue. 4/30/ :26 PM 2

3 Design and Simulation of Optoelectronic Devices Design, modeling and simulation Semiconductor lasers Electro-absorption modulators Semiconductor optical amplifiers Super-luminescent light emitting diodes Integrated optoelectronic devices Motivations Increased complexity in component design to meet the enhanced performance on demand Maturity of fabrication technologies Better understanding on device physics Maturity of numerical techniques which leads to the recent rapid progress on the computer-aided design, modeling and simulation of optoelectronic devices 4/30/ :26 PM 3

4 Motivation Conventional Approach New idea Back of envelop design Experiment (costly) 4/30/ :26 PM Works? No (very likely) Yes End Effective Approach New idea Computer-aided design and modeling Simulation Works? No (very likely) Yes Experiment (costly) Works? Yes End No (less likely)

5 Physics Processes in Optoelectronic Device Bias I(t) or V(t) Ambient temperature T(t) Output Potential and carrier distribution (The Poisson and continuity equations) Temperature distribution(the thermal diffusion equation) Saturation and detuning Optical field distribution (The Maxwell equations) Band structure(the SchrÖdinger equation) Material gain andrefractive indexchange (TheHeisenb erg equation) Recombination s 4/30/ :26 PM 5

6 DFB-LD + EAM 4/30/ :26 PM 6

7 Layer Thickness Composition of Doping Remarks ( nm ) In (1-x) Ga x As y P (1-y) concentration (x, y) 3 ( g (nm) and strain / cm ) Cap P-InGaAs 200 (0.468, 1.000) 10.0 (P) 1654nm, 0.0 Graded doped P-InP (0.000, 0.000) (P) 918.6nm, 0.0 Etching stop 10 (0.108, 0.236) 0.2 (P) 1050nm, 0.0 Spacer InP 50 (0.000, 0.000) Undoped 918.6nm, 0.0 Grating InGaAsP 80 (0.249, 0.539) Undoped 1250nm, 0.0 Spacer InP 20 (0.000, 0.000) Undoped 918.6nm, 0.0 SCH InGaAsP 10 (0.249, 0.539) Undoped 1250nm, 0.0 Barrier 10 (0.249, 0.539) Undoped 1250nm, 0.0 Well (0.122, 0.728) Undoped 1571nm, CS1.50% Barrier 5 10 (0.249, 0.539) Undoped 1250nm, 0.0 GRINSCH InGaAsP 10 (0.249, 0.539) 0.5 (N) 1250nm, 0.0 GRINSCH InGaAsP 20 (0.216, 0.469) 0.5 (N) 1200nm, 0.0 GRINSCH InGaAsP 20 (0.181, 0.395) 0.5 (N) 1150nm, 0.0 GRINSCH InGaAsP 20 (0.145, 0.317) 0.5 (N) 1100nm, 0.0 GRINSCH InGaAsP 20 (0.108, 0.236) 0.5 (N) 1050nm, 0.0 Buffer N-InP 650 (0.000, 0.000) 1.0 (N) 918.6nm, 0.0 Etching stop 10 (0.108, 0.236) 3.0 (N) 1050nm, 0.0 Substrate N-InP (0.000, 0.000) 3.0 (N) 918.6nm, 0.0 4/30/ :26 PM 7

8 Layer Thickness Composition of Doping Remarks ( nm ) In (1-x) Ga x As y P (1-y) concentration (x, y) 3 ( g (nm) and strain / cm ) Cap P-InGaAs 200 (0.468, 1.000) 10.0 (P) 1654nm, 0.0 Cladding P-InP (0.000, 0.000) 0.5 (P) 918.6nm, 0.0 GRINSCH InGaAsP 50 (0.108, 0.236) Undoped 1050nm, 0.0 GRINSCH InGaAsP 50 (0.181, 0.395) Undoped 1150nm, 0.0 Barrier 6 (0.196, 0.343) Undoped 1100nm, TS0.27% Well 10 9 (0.336, 0.861) Undoped 1580nm, CS0.45% Barrier 10 6 (0.196, 0.343) Undoped 1100nm, TS0.27% GRINSCH InGaAsP 20 (0.181, 0.395) Undoped 1150nm, 0.0 GRINSCH InGaAsP 25 (0.108, 0.236) Undoped 1050nm, 0.0 Buffer N-InP 650 (0.000, 0.000) 1.0 (N) 918.6nm, 0.0 Etching stop 10 (0.108, 0.236) 3.0 (N) 1050nm, 0.0 Substrate N-InP (0.000, 0.000) 3.0 (N) 918.6nm, 0.0 4/30/ :26 PM 8

9 Mode Matching 4/30/ :26 PM 9

10 Far Field Pattern 4/30/ :26 PM 10

11 Application of Nanotechnology for Energy development in Niger The research and development of solar cells using nanotechnology is probably the most promising for alternative energy consumption. Carbon nanotubes (CNT), fullerenes and quantum dots are used to make solar cells lighter, cheaper, and more efficient. For example, constructing photovoltaics with vertical laying CNTs greatly increases the amount of light that can be collected. structural properties of photovoltaics can be modified using nanotechnology. The efficiency of PV can be increased efficiency through the use of materials like lead-selenide. For efficient energy transmission, nanotechnology could be used to create new kinds of conductive materials that lose very little energy as electricity moves down the line. Investigation is going on whether nanowires and nanocoatings could reduce losses in electrical-transmission lines. 4/30/ :26 PM 11

12 The average solar energy potential in Niger ranges between 5 and 7 kwh/m2/day, while the average period of sunshine varies between 7 and 10 hours per day. In 2006, the power installed in the sector of solar photovoltaic (PV) was estimated at 1,170 kwp. In 2010 the PV power was estimated to 1.35 MWp. The current use of solar thermal energy (hot water) accounts for about 2,000 m² of absorbers. Le Centre National d Energie Solaire (CNES): energy research center created in The National Centre of solar energy (CNES), created by Act June 15, CNES provide research and development services for the creation of appropriate solar technologies for lighting, heating, cooking, water, etc. The University Abdou Moumouni of Niamey and the Dan Dicko Dankoulodo University of Maradi that are mandated by Government to work in the field of basic research offers a certificate of advanced studies in solar photovoltaic 4/30/ :26 PM 12

13 By 2010, a project aiming to electrify by solar PV the villages Moli Haoussa (Commune rurale de Tamou) and Bani Gueti (Commune de Torodi), with financial assistance of the Government of India was realized. It enables 150 household to access SHS and the electrification of the collectives infrastructures such as the schools, health centers. By 2013, a large rural electrification project with the use of Solar PV systems will be implemented in the Region of Dosso and Tillabery at the cost of 7 billion FCFA (Euro 10,6 Millions) to provide basic services in about 150 villages. This project is co- financed by the ECOWAS development bank. PRASE-SAFO: "Project for access to the Energy Services by the rural Commune of Safo" for Maradi region, which is designed to provide modern energy services to community infrastructure. This project installed PV for water irragation. 4/30/ :26 PM 13

14 Financial barriers Barriers Capacity barriers: (Including: Technology, management and coordination) Institutional and regulatory barriers Market and competiveness barriers 4/30/ :26 PM 14