Enabling Solid State Lighting through Advancements in MOCVD Technology

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1 Enabling Solid State Lighting through Advancements in MOCVD Technology Kenny Sun, Ph.D Director of Technology Taiwan Technology Center Veeco Taiwan Inc.

2 LED Lighting at the Cusp of Mass Adoption LED Output/Package (Lumens) LED Costs ($/klm) Additional cost benefits from higher energy efficiency, longer lifetime and ease of maintenance Sources: Bloomberg New Energy Finance, Haitz s law 2 Innovation. Performance. Brilliant.

3 Veeco GaN MOCVD Goals Performance Up lm / $ Efficacy Up lm / W $ / W Cost Down Enable best HB LED brightness and electrical performance Provide best process capability and flexibility Offer lowest CoO to accelerate industry adoption of LED-based solid state lighting Enable >4x reduction in $/lumen 3 Innovation. Performance. Brilliant.

4 Industry Roadmap for Blue/White LEDs High Power LED Package for Lighting (Cool White) Requirements (DOE Based) Lumens/Watt $ per 1000 lumens $13 $9 $6 $4 $3 $2 Lumens/$ $/Watt OEM lamp price ($/klm) $50 $31 $23 $16 $13 $10 High Power LED Package for Lighting (Cool White) Requirements (LED Companies) $ per 1000 lumens $6.6 $3 $2 $1.6 $1.2 $1 Lumens/$ LED Requirements Blended Yield (Blue LED) 38% 40% 42% 45% 48% 50% Substrate Size (s) 2,3,4 2,3,4,6 2,3,4,6 4,6 4,6,8 4,6,8 Substrate Material(s) Sapphire Sapphire Sapphire Sapphire Sapphire, Silicon Sapphire, Silicon Improvements in Brightness & Cost Will Enable Solid State Lighting LED Company Roadmaps are Ahead of DOE Projections 4 Innovation. Performance. Brilliant.

5 LED Fabrication MOCVD is Critical in Determining LED Performance and Cost SAPPHIRE WAFERS Epitaxial Process Contacts MOCVD P - GaN N - GaN Buffer Sapphire Etch Chip Processing Thinning/Dice Encapsulation/Lens Packaging Heat Sink/WB Color, brightness, electrical properties and cost are determined by MOCVD MOCVD is > 50% of the LED Fab capital expenditure MOCVD is > 50% of the LED fab capital expenditure 5 Innovation. Performance. Brilliant.

6 Relative LED Manufacturing Cost ($/cm 2 ) Relative Epitaxy Cost ($/cm 2 ) Veeco HB LED Epitaxy Cost Reduction Model Relative LED Die Manufacturing Cost Relative Epitaxy Manufacturing Cost Die Fab & Backend Epi Substrate Facilities Labor Spares/Consumables Gas/Utilities Capital Depreciation Veeco is Driving ~3X Epitaxy Cost Reduction by Innovation. Performance. Brilliant.

7 Epitaxy Cost Reduction Approach Quick PM Recovery Ease-of-use Reliability Automation Fault Detection & Advanced Process Control High Performance / High Reliability Spares & Consumables Improved Flow Efficiency Reduced Source Consumption Optimized Wafer Packing Labor (15%) Spares/ Consumables (17%) 2011 Epi Cost Facilities (2%) Gas/Utilities (34%) Capital Depreciation (31%) Optimized Throughput Fast Temp Ramp Fast GaN Growth Quick PM Recovery Architecture/Clustering Larger Wafers Yield Improvement Improved Thermal & Flow Control Enhanced Reactor Components Improved In-situ Monitoring Improved Run-to-run Repeatability Chamber Matching Veeco is Driving ~3X Epitaxy Cost Reduction by Innovation. Performance. Brilliant.

8 Epitaxy Uniformity and Binning Yield Bad die from epitaxy nonuniformity are processed through singulation along with good die Less uniform epitaxy increases testing & binning burden and cost More uniform epitaxy results in less bins and higher yield Non-uniformity Epitaxy Substrate Removal Dicing Front End Processes Bonding Stretchable Tape Epitaxy uniformity has major influence on pre-packaging binning yields Testing & Binning Pick and Place Bin 1 Bin 2 Bin 3 Bin N Rejected Die Source: Yole, Veeco 8 Innovation. Performance. Brilliant.

9 Effect of PL Wavelength Uniformity on Binning More die in tighter wavelength distribution (i.e. less bins, more efficient binning) Reduces manufacturing cost Tighter wavelength distribution from PL wavelength uniformity improvement (±5nm to ±2.5nm) Bin 5 Bin 3 Bin 1 Bin 2 Bin 4 More die in target bin (i.e. Bin 1) Increases revenue Better phosphor matching with tighter wavelength distribution (i.e. better brightness consistency) Increases chip value Highest Value PL wavelength uniformity improvement enables LED manufacturers to 1) reduce binning cost, 2) increase revenue and 3) achieve higher chip value 9 Innovation. Performance. Brilliant.

10 Accelerated Pace of MOCVD System Development # 1 K465i and MaxBright are #1 Selling MOCVD Systems Since Q3 10; Industry s Highest Productivity 2012 MaxBright M, MHP K465iHP 2011 MaxBright 2010 K465i 2007 K Innovation. Performance. Brilliant.

11 Introducing MaxBright M (Modular) Industry s most productive MOCVD platform with improved footprint efficiency and serviceability: Based on production proven industry #1 cluster platform Improved serviceability with modular and compact design Up to 15% improved footprint efficiency Increased layout flexibility to accommodate different fab needs MaxBright M with improved footprint efficiency and serviceability enhances customers fab productivity 11 Innovation. Performance. Brilliant.

12 MaxBright M: Efficiently Packaged Auxiliaries to Maximize Footprint Efficiency MaxBright MaxBright M 81 m 2 71 m 2 Height: 2.4m Height: 1.7m MaxBright MaxBright M 12 Innovation. Performance. Brilliant. Up to 15% Footprint Efficiency Includes Service Area

13 Improved Layout Flexibility C4 Configurations C2 Configurations MaxBright MaxBright M MaxBright MaxBright M Tool & Maint. Area (m 2 ) 81.4 Tool & Maint. Area (m 2 ) 61.0 A D Area (m 2 ) Area (m 2 ) Change Change -13% -17% B E Area (m 2 ) Area (m 2 ) Change Change +2% -33% C F Area (m 2 ) Area (m 2 ) Change Change -41% -61% 13 Innovation. Performance. Brilliant.

14 TurboDisc Performance Advantages TurboDisc Technology Laminar flow Longest campaigns without scheduled reactor maintenance No parts change or baking between runs Clean reactor operation with lowest particles Stable thermal environment No Particles 5um GaN Excellent Surface 200um Ultra-clean TurboDisc technology results in superior particle performance for HB LED manufacturing 14 Innovation. Performance. Brilliant.

15 K465i Uniform FlowFlange Excellent Uniformity and Repeatability Growth Rate (a.u.) Uniformity Uniform gas distribution across wafer carrier without complex tuning Excellent yield for all wafers Repeatability Simplified gas injection plus laminar flow provides excellent repeatability Reactor environment stable throughout entire run campaign Uniform Alkyls&Hydrides 0.04 Excellent uniformity 0.02 across the wafer carrier Radius (m) Uniformity and repeatability by design 15 Innovation. Performance. Brilliant.

16 MaxBright = High Productivity Automation = Higher Throughput Quick PM Recovery = Longer Uptime Automation minimizes time between runs Clean operation and fast maintenance recovery prevents unnecessary downtime Fast ramp and higher GaN growth rate reduces process recipe time 16 Innovation. Performance. Brilliant.

17 Introducing MaxBright MHP (Modular High Performance) Industry s highest productivity MOCVD platform with low cost of ownership and excellent yield: Up to 20% WiW PL wavelength uniformity improvement 95% in 5nm WiW yield Greater than 5% CoO savings Improved serviceability with modular and compact design Up to 15% improved footprint efficiency Based on industry s #1 production proven cluster platform Increased layout flexibility to accommodate different fab needs MaxBright MHP extends Veeco s product leadership with highest productivity, low CoO and excellent yield 17 Innovation. Performance. Brilliant.

18 High Performance Technology Key benefits: Extends uniform thermal and flow zone within the chamber Up to 20% WiW PL wavelength uniformity improvement Greater than 5% CoO savings K465i and MaxBright can be upgraded to HP Simple recipe transfer High Standard Performance New technology enhances uniformity for even higher yield 18 Innovation. Performance. Brilliant.

19 Excellent Within Wafer PL Uniformity with HP 14 x 4 with HP 6 x 6 with HP PL Uniformity 0.96nm (1 ) PL Uniformity 0.59nm (1 ) >95% Yield (5nm bin) >95% Yield (5nm bin) 0-2 mm edge exclusion 19 Innovation. Performance. Brilliant. Excellent Within Wafer PL Uniformity

20 Excellent Wafer-to-Wafer PL Uniformity with HP 14x4 with HP 6x6 with HP WiW Yield of 90-95% (5nm Bin) WiW Yield of 95% (5nm Bin) WtW PL Uniformity = 1.0nm WtW PL Uniformity = 0.85nm 20 Innovation. Performance. Brilliant. Excellent Wafer-to-Wafer PL Uniformity 0-2 mm edge exclusion

21 Industry s Best Performing MOCVD Solutions MaxBright M MaxBright MHP K465i HP HP Upgrade for MaxBright or K465i Improved Uniformity >20% >20% >20% Reduced CoO >5% >5% >5% Better Serviceability Greater Layout Flexibility Higher Footprint Efficiency Increased Productivity 21 Innovation. Performance. Brilliant.

22 Why GaN/Si LED? 6 Si substrate cost $30 vs. sapphire $300 8 Si cost advantage even greater, more consistent quality than 8 sapphire Existing 6 and 8 CMOS fab equipment fully depreciated and can be used for LED manufacturing Vertical LED can use wet chemical process to remove Si, eliminate need for costly laser process to strip sapphire Osram and BridgeLux/Toshiba announced GaN/Si LED brightness close to that on sapphire 22 Innovation. Performance. Brilliant.

23 Press Release from Osram Trade Press Researchers at OSRAM Opto Semiconductors have succeeded in manufacturing high-performance prototypes of blue and white LEDs, in which the light-emitting gallium-nitride layers are grown on silicon wafers with a diameter of 150 millimeters. Quality and performance data on the fabricated LED silicon chips match those of sapphire-based chips: the blue UX:3 chips in the standard Golden Dragon Plus package achieve a record brightness of 634 mw at 3.15 volts, equivalent to 58 percent efficiency. These are outstanding values for 1 mm² chips at 350 ma. In combination with a conventional phosphor converter in a standard housing in other words as white LEDs these prototypes correspond to 140 lm at 350 ma with an efficiency of 127 lm/w at 4500 K. 23 Innovation. Performance. Brilliant.

24 Press Release from Bridgelux & Toshiba Bridgelux & Toshiba Achieve World Class Performance for 8 GaN-on-Si LEDs Toshiba Corporation Makes Equity Investment in Bridgelux Livermore, Calif. and TOKYO, JAPAN May 10, 2012 Bridgelux Inc., a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry s top class 8 GaN on Silicon LED chip emitting 614mW, <3.1V@350mA with 1.1mm square chip, just months after they have engaged in a joint collaborative agreement this year. Bridgelux and Toshiba will further accelerate their development efforts for LED chips. 24 Innovation. Performance. Brilliant.

25 Why Veeco TurboDisc Reactor? TurboDisc Advantages No residue buildup on FlowFlange after 85 runs Stable process run-to-run Same good performance 6 Vs. 8 Low particle count with high Al content process RT directly measures Si wafer temperature No coating on top viewport Temperature control reliable TurboDisc High Velocity Laminar Flow High quality film Large space between FF and Wafer Clean reactor throughout entire run TurboDisc reactor suitable for high Al content process 25 Innovation. Performance. Brilliant.

26 Flow Flange Remains Clean after 85 Runs before PM 26 Innovation. Performance. Brilliant.

27 Close Space Reactor Limitations for GaN/Si Manufacturing Issues Coating on viewport prevents reliable measurement of Si wafer temperature Frequent maintenance Residue buildup High running cost Close-spacing reactors require frequent PM; difficult to control wafer temperature and run-to-run More difficult to handle contamination and achieve run-to-run stability 27 Innovation. Performance. Brilliant.

28 8 Thickness and Wavelength Uniformity Thick GaN reduces dislocation density, but wavelength uniformity is worse due to high convex-bow during MQW growth GaN Thickness Thickness Map PL Spectral Map PL Spectrum 2.5 μm Uniformity (Std Dev.)= 1.1% Uniformity (Std Dev.)= 0.53% 5.5 μm Uniformity (Std Dev.)= 0.9% Uniformity (Std Dev.)= 1.61% 28 Innovation. Performance. Brilliant.

29 5.5um GaN on 8 Si Material Properties Schematic Structure X-ray Rocking Curves AFM Thickness Map GaN(002) GaN(102) 5.5 m-thick-gan Buffer Center 5x5 μm 2 Optical Microscope Edge 200 mm Si(111) substrate x50 Crack < 1mm x50 Structure XRD FWHM AFM Surface Morphology Thickness Uniformity GaN(002) ω GaN(102) ω RMS Std Dev. 5.5 μm-thick-gan 250 arcsec 450 arcsec 0.15 nm 0.90% Nomarski Optical Microscope Crack-Free & Smooth surface 29 Innovation. Performance. Brilliant.

30 6" GaN-on-Si LED, Material Properties AFM image Spectral map & Spectrum 5x5 μm 2 20x20 μm 2 XRD FWHM GaN(002)= 378 arcsec GaN(102)= 549 arcsec All wafers have good PL uniformity, (one sigma) ~1nm LED morphology shows good Mg concentration XRD FWHM is close to GaN/Sapphire (002): ~ 380 & (102): ~ Innovation. Performance. Brilliant.

31 Veeco Working to Make Customers Successful Focus on customers for production support and roadmap collaboration Drive continuous innovation in MOCVD system technology to enhance product performance Increase R&D Support customer manufacturing with broad & deep MOCVD applications expertise Taiwan Tech Center China Training Center Korea Development Center Leverage and implement semiconductor industry practices and know-how Drive operational excellence flexible capacity, ontime delivery & product quality 31 Innovation. Performance. Brilliant.