Realization of Intrinsically Stretchable Organic. Solar Cells Enabled by Charge-Extraction Layer. and Photoactive Material Engineering

Transcription

1 Supporting Information Realization of Intrinsically Stretchable Organic Solar Cells Enabled by Charge-Extraction Layer and Photoactive Material Engineering Yun-Ting Hsieh, a Jung-Yao Chen, a Seijiro Fukuta, b Po-Chen Lin, a Tomoya Higashihara, b Chu-Chen Chueh, a,c* and Wen-Chang Chen a,c* a Department of Chemical Engineering, National Taiwan University, Taipei, 1617 Taiwan. b Department of Organic Materials Science, Graduate School of Organic Materials Science, Yamagata University, Jo-nan, Yonezawa, Yamagata , Japan c Advanced Research Center of Green Materials Science & Technology, Taipei 1617, Taiwan *Corresponding authors. cchueh@ntu.edu.tw; chenwc@ntu.edu.tw S-1

2 Table S1. UPS analysis of the ITO and metal surfaces with and without the /NBR modification. Electrodes E cutoff (ev) WF (ev) a WF (ev) Bare ITO ITO/ ITO/:NBR ITO/NBR Au Au/:NBR Ag Ag/:NBR a Work function (WF) (ev)= E cutoff -E F, which HeI source of h =21.22eV and E F of 3.7eV and ev for ITO and metals, respectively.(e cutoff : secondary electron offset; E F : Fermi level) Figure S1. AFM tapping mode topographic (left) and phase (right) images of (a) the bare ITO substrate and the (b), (c) /NBR blend, and (d) NBR films spin-coated on the ITO substrates. S-2

3 Transmittance (%) /NBR NBR Wavelength (nm) Figure S2. Optical transmittance of the, NBR, and /NBR films on the glass substrates. Table S2. Photovoltaic performance of the inverted PTB7-Th:PC 71 BM devices using the hybrid /NBR films consisting of different weight ratios of to NBR at a fixed total concentration of.1 mg/ml in DMSO. EEL V oc (V) J sc (ma cm -2 ) FF (%) PCE (%) (w/o acetic acid) *.61± ±.31.4± ±.13 /NBR (9:1) /NBR (7:3) /NBR (:) *.73±.1 1.9±.26.6±.1 6.9±.21 /NBR (4:6) NBR *.± ±..4± ±.26 * Data shown in Table /NBR Figure S3. The J-V characteristic of the studied conventional devices with and without using the /NBR EEL. S-3

4 (a) (c) (e) /NBR /NBR /NBR Figure S4. The J-V characteristics of the studied stretchable devices with and without using the /NBR EEL based on (a) PTB7-Th:PC 71 BM, (c) PTB7-Th:ITIC, and (e) PTB7-Th:P(NDI2HD-T) BHJ layers, and the J-V characteristics of the corresponding devices fabricated on the regular ITO-coated glass based on (b) PTB7-Th:PC 71 BM (V oc of.82v, J sc of ma/cm 2, FF of 4% and PCE of 6.8%), (d) PTB7-Th:ITIC (V oc of.81v, J sc of 13.9 ma/cm 2, FF of 6% and PCE of 7.34%). and (f) PTB7-Th:P(NDI2HD-T) (V oc of.78v, J sc of 9.71 ma/cm 2, FF of 42% and PCE of 3.16%) BHJ layers (b) (d) (f) S-4

5 Figure S. Illustration of the stretchable test used in this study. (a) The pristine device in an unstretched state. The right side of the device exactly touches the black line. (b) Stretching the device by pulling the right side to the blue line. (c) The stretched-out state of the device. The right side of the device exactly touches the blue line (targeted strain) instead. Figure S6. The J-V characteristics of the studied stretchable devices with and without using the pristine EEL based on (a) PTB7-Th:PC 71 BM and (b) PTB7-Th:P(NDI2HD-T) BHJ layers. Table S3. Comparison of photovoltaic performance of studied intrinsically stretchable devices using different EELs. Acceptor EEL Strain V oc (V) J sc (ma cm -2 ) FF PCE (%) PC 71 BM P(NDI2HD-T) Without EEL /NBR Without EEL /NBR % % % % % % % % % % % % S-