Pioneering ALD experience since The ALD Powerhouse PRODUCT CATALOGUE FOR SUNALE P-SERIES ALD SYSTEMS

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1 Pioneering ALD experience since 1974 The ALD Powerhouse PRODUCT CATALOGUE FOR SUNALE P-SERIES ALD SYSTEMS

2 SUNALE P-SERIES ALD SYSTEMS PRODUCT CATALOGUE Description SUNALE P-series ALD system SUNALE P-series ALD-module is a thin film deposition tool for the Atomic Layer Deposition (ALD) method. The system is designed for use in wafer batch production. The ALD reactor has four separate inlets for precursor sources. It can accommodate up to six precursor sources. Maximum deposition temperature of the ALD reactor is 500 C. ALD Product comprises o SUNALE ALD reactor frame for the deposition of metal oxide or metal nitride thin films o Cold wall vacuum chamber with inner hot-wall reaction chamber o Top flow to enable easy and safe unloading/loading with the pneumatic elevator loading system, controllable by the software from the touch panel o The process unit has a small footprint of less than 1 m 2 / unit o Optimized design of substrate holders to enable fast cycle times and high speed pulsing without issues with particles or unwanted CVD growth o Highly uniform pressures (flows), ±1 % and temperatures, ±1 C o A mechanical foreline particle trap with afterburner is installed in the pump line o SECS/GEM control software of the ALD system integrated to the touch panel PC. User interface created with a SCADA software tool. o Logging data for a run as separate files o Automated flow control and integrated pulsing monitor o System is cleanroom compatible at least class 10 (Euro 4) o Safety systems according CE certification requirements and SEMI 02 standard o Electric supply 3 phase V with neutral and earth. o Power consumption without pump about 6 kw and with hot source about 7,5 kw o Operating uptime > 90 % o Particle level < 30 added particles / 8 wafer o Film uniformity < 1 % 1sigma / 8 wafer o Installation included o Basic hands-on training for operators of the ALD Product included o Reaction chamber, precursor sources, and a vacuum pump shall be selected from the list below and added to the price

3 PicoBatch Reaction chamber Hot wall reaction chamber (within the cold wall vacuum chamber) for metal oxide or metal nitride processes Four inlets pre-installed for precursor source conduits Metallic carrier cassette included for batch processing, special designs available for 4, 6, 8, 12 wafers or 156x156 mm square wafers and 3D parts, or customer defined Computer controlled standard deposition temperature range up to 500 C with an accuracy of ±1 C The chamber is made from AISI 316 stainless steel. Other construction materials are available upon request Picosolution 600 source system Suitable with source chemicals having a vapor pressure of at least 10 mbar at source temperature One complete container assembly with conduits and a pulsing valve AISI 316 stainless steel container for up to 600 cm 3 of liquid precursor Integrated manual isolation valve Computer-controlled three-way pneumatic valve for pulsing VCR all metal sealed gas flow system Temperature-stabilized below ambient temperature Source chemicals shall be bought separately Picohot 300 source system Suitable with source chemicals having a vapor pressure of at least 2 mbar at source temperature Source heating temperature up to 300 C Compatible with thermally stable metal chemicals including metal halides, metal-organic compounds and organometallic chemicals One complete container assembly with temperature controlled conduits, a pulsing valve and heat insulators 300 ml precursor container certified for transport (SAFC) Two computer-controlled three-way pneumatic valves for pulsing VCR metal sealed gas flow system Safety pipe with a burst disk (10 bar) for heating of chemicals that have a risk to generate overpressure Source chemicals shall be bought separately

4 Picogases source cabinet (10245) Suitable with source chemicals which are gaseous at room temperature One complete source cabinet assembly with a pressure regulator, a mass flow meter, tubing and valves Standard cabinet assembly compatible with ammonia gas; other gases on request Space for an internal 2000 cm 3 gas bottle and a connection point for an external gas line Computer-controlled three-way pneumatic valve for pulsing Manual source isolation valve Room temperature cabinet with connection to exhaust AISI 316 stainless steel Essentially VCR metal sealed gas flow system Gas leak sensor and source chemicals shall be bought separately Picogases connection (R20341) One complete source assembly with a mass flow meter, tubing and valves Computer-controlled three-way pneumatic valve for pulsing Essentially VCR metal sealed gas flow system Gas leak sensor and source chemicals shall be bought separately Picozone PZ-200 source assembly One ozone delivery subsystem with ozone generator, tubing and valves One in-feed conduit of the ALD reactor is adapted for introducing ozone into the reaction chamber O 3 concentration up to 20 % Computer-controlled three-way pneumatic valve for pulsing Mass flow meter for oxygen Ozone destroyer Seals of the gas flow system compatible with ozone Oxygen bottle, oxygen pressure regulator and ozone leak sensor shall be bought separately

5 Wafer transfer system Suitable for moving 25 pieces of 8 wafers from plastic cassette to metallic ALD carrier Picoloader Robotic handler Robotic loader capable of loading metallic ALD carriers into Picobatch chamber Programmable software with automated handshake and communication with ALD system software Compact and reliable commercial industrial robot with standard parts and easy support Configuration, installation and on-site training of the robot included in price Dry vacuum pump 420 m 3 /h Ebara ESA 70W-D oil-free dry vacuum pump Suitable for R-200 reactors Mechanical foreline particle trap included The abatement system is not included Pump base pressure 2 Pa 3-phase V or V The abatement system is not included Pumping speed (N 2 ) 50/60 Hz: 7000/8400 l/min. Pumping speed (N 2 ) 50/60 Hz: 420/504 m 3 /h Ultimate pressure 50/60 Hz: 3 x 10-3, 1.3 x 10-3 mbar Ultimate pressure 50/60 Hz: 0.3/0.13 Pa Water Consumption: 3.5 l/min Nitrogen Consumption: slm Nitrogen Consumption: Pa m 3 /sec Voltages ranges: / V Motor power, installed: kW Weight, approx.: 380 kg Sizes (L x W x H): 825 mm x 400 mm x 760 mm Inlet flange size: DN 50 KF Outlet flange size: DN 40 KF

6 Dry vacuum pump 600 m 3 /h Edwards ixh610 Dry Vacuum pump for harsh conditions Power V, 3-Phase, 50/60Hz Mechanical foreline particle trap and afterburner are included Backflow valve, MCM MicroTIM and Pump Display Terminal are included Abatement system not included Inlet flange size: ISO 100 KF Outlet flange size: NW 40 KF Ultimate vacuum (typical): < 5*10-3 mbar Peak speed: 665 m3/h Typical water flow: 3.0 l/m Purge flow range: 28/44 slm Weight: 355 kg System Power at ultimate: 2,9 kw Dimensions: (LxWxH) 784x390x780 mm PG-200 nitrogen gas generator (9 SLM) Suitable for carrier gas nitrogen feed for one P-series reactor + pressurized air for P-series reactor + dilution and bear sealing of a dry vacuum pump Maximum nitrogen flow rate is 9000 std. cm 3 /min. (= 9 slm) Purity of nitrogen is % Nitrogen buffer tank 150 liter, pressure up to 10 bar External air compressor with a 150 liter buffer tank Tubing, adsorption dryer, filters and pressure regulators are included Picochill PC-200 closed loop chiller for the pump Optimal for cooling of water in closed loop line for dry vacuum pumps up to 600 m 3 /h and plasma generators Picoscrubber PS-200 exhaust gas treatment system Suitable for cleaning exhaust gases of a dry vacuum pump For phosphorus containing gases Scrubbers for other gases available on request

7 SUNALE P-SERIES ALD SYSTEM ACCESSORIES AND SPARE PARTS PRODUCT CATALOGUE Description Spare container for Picosolution 600 source system Volume for 600 cm 3 of liquid precursor Manual isolation valve for opening/closing the container Suitable for precursor storage The container is made from AISI 316 stainless steel Level sensor available on request with extra quotation Spare container for Picohot 300 source system 300 ml precursor container certified for transport (SAFC) Compatible with thermally stable metal chemicals including metal halides, metal-organic compounds and organometallic chemicals Manual isolation valve for opening/closing the container VCR metal sealed system Safety pipe with a burst disk (10 bar) for heating of chemicals that have a risk to generate overpressure Carrier for Picobatch Chamber Extra metal carrier suitable for for Picobatch chamber Made from AISI 316 stainless steel Designs available for 4, 6, 8, 12 wafers or 156x156 mm square wafers and 3D parts Customized designs available

8 Pioneering ALD experience since 1974 The ALD Powerhouse Main headquarters: Picosun Oy, Tietotie 3, FI Espoo, Finland Tel , Web: North American headquarters: Picosun USA, 719 Griswold Street, Suite 820, Detroit, Michigan 48226, USA Tel , Fax: , Regional sales and support: See for details of regional sales offices.

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WŝŽŶĞĞƌŝŶŐ > ĞdžƉĞƌŝĞŶĐĞ ƐŝŶĐĞ ϭϵϳϰ WŝĐŽƐƵŶ ^he > Ρ WͲƐĞƌŝĞƐ > ƐLJƐƚĞŵƐ ƌŝěőŝŷő ƚśğ ŐĂƉ ďğƚǁğğŷ ƌğɛğăƌđś ĂŶĚ ƉƌŽĚƵĐƟŽŶ d, &hdhz K& d,/e &/>D /^, Z The ALD Powerhouse Picosun Defining the future of ALD Picosun s history and background date back to the very beginning of the field of atomic layer deposition. ALD was invented in Finland in 1974 by Dr.

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