Development of High-concentration Photovoltaics at Fraunhofer ISE: Cells and Systems
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1 Development of High-concentration Photovoltaics at Fraunhofer ISE: Cells and Systems Gerhard Peharz Fraunhofer-Institut für Solare Energiesysteme ISE 23 rd October 2008
2 Outline The Fraunhofer ISE III-V solar cell development Concentrator development 2
3 Fraunhofer Institute for Solar Energy Systems ISE Director: Prof. Eicke R. Weber Staff: >700 Budget: 44.5 Mio EUR Established:
4 Fraunhofer ISE Areas of Buisiness Buildings and Technical Building Services Optical Components and Systems Solar Cells Off-Grid Power Supplies Grid-Connected Renewable Power Generation Hydrogen Technology 4
5 III-V Epitaxy and Solar Cells MIM devices Thermophotovoltaic cells Laser power converters Compact concentrator receivers Epitaxy Device technology Systems and products Semiconductor physics Device modelling Solar cell characterization Packageing 5
6 III-V Semiconductor Materials Band Gap Energy [ev] 2.5 AlP GaP GaAs AlAs AlSb InP GaAsSb:N GaSb InAs InSb Lattice Constant [Å] 6
7 III-V Multi-junction Solar Cells front contact Example: Layer structure of triple-junction cell ARC n + -AlInP - window layer n-gainp - emitter GaInP - undoped layer p-gainp - base p + -GaInP - barrier layer p + -AlGaInP - barrier layer p ++ -AlGaAs n ++ -GaAs or GaInP n + -AlGaInP/AlInAs - barrier layer n-gainas - emitter GaInAs - undoped layer p-gainas - base p + -GaInAs - barrier layer p + -AlGaInAs - barrier layer p ++ -AlGaAs n ++ -GaInAs n-graded Ga 1-x In x As buffer layer p-ge substrate (100) cap layer n- doped window- and nucleation layer n-ge diffused emitter rear contact Ga 0.51 In 0.49 P top cell 740 nm tunnel diode 1 Ga 0.95 In 0.05 As middle cell 1050 nm tunnel diode 2 buffer Ge bottom cell 1800 nm 7
8 Advantage of III-V Multi-junction Solar Cells Spectral irradiance [W/m 2 µm] Thermalization losses AM1.5 spectrum Si (1.12 ev) Energy that can be used by a Si solar cell Transmission losses Spectral irradiance [W/m 2 µm] AM1.5 spectrum GaInP (1.70 ev) GaInAs (1.18 ev) Ge (0.67 ev) Wavelength [nm] Wavelength [nm] 8
9 III-V Solar Cells Efficiency History Efficiency [%] III-V Solar Cells ISE Development TJ mech stacked, conc. dual-junction, conc single-junction, one sun single-junction, conc. triple-junction monolithic, conc Year 9
10 Triple-junction concepts on Ge substrates Bandgap [ev] 2,0 1,5 1,0 0.4 GaAs AlAs Ga 0.49 In 0.51 P 0.5 Ge InP 0,5 5,6 5,7 5,8 5,9 Lattice constant [Å] Bandgap of top cell [ev] 2,0 Ga 0.49 In 0.51 P Ga 0.99 In 0.01 As 1,8 1,6 1,4 1,2 0,8 1,0 1,2 1,4 1,6 Bandgap of middle cell [ev] Efficiency [%] x AM1.5d low AOD, T=298 K 10
11 Triple-junction concepts on Ge substrates Bandgap [ev] 2,0 1,5 1,0 0.4 GaAs AlAs Ga 0.49 In 0.51 P Ge 0.6 Ga 0.35 In 0.65 P Ga 0.83 In 0.17 As InP 1.2 % 0,5 5,6 5,7 5,8 5,9 Lattice constant [Å] Bandgap of top cell [ev] 2,0 Ga 0.49 In 0.51 P Ga 0.99 In 0.01 As 1,8 1,6 1,4 1,2 Ga y In 1-y P lattice matched to Ga x In 1-x As Ga 0.35 In 0.65 P Ga 0.83 In 0.17 As 0,8 1,0 1,2 1,4 1,6 Bandgap of middle cell [ev] Efficiency [%] x AM1.5d low AOD, T=298 K 11
12 Metamorphic Growth Epitaxial layer not relaxed Epitaxial layer relaxed Misfit dislocations Substrate 12
13 Metamorphic Buffer Concept Dislocations confined within buffer structure No threading dislocations in active solar cell area observed in TEM 13
14 Triple Junction Ga 0.35 In 0.65 P/Ga 0.83 In 0.17 As/Ge Solar Cells Good performance of EQE 4 cm² device 100 Lattice mismatched Lattice matched 80 EQE [%] Wavelength [nm] 14
15 Lattice Mismatched Triple-Junction Cells Grid optimized for high concentration ( X) Efficiency [%] Fill factor [%] # Ga 0.35 In 0.65 P/Ga 0.83 In 0.17 As/Ge T = 25 C, A = cm² Fill Factor Efficiency η max Concentration [x, AM1.5d, low AOD, 1000 W/m²] 15
16 Lattice Mismatched Triple-Junction Cells 88 Grid optimized for very high concentration (> 1000 X) Efficiency [%] Fill factor [%] Ga 0.35 In 0.65 P/Ga 0.83 In 0.17 As/Ge T = 25 C, A = cm² Fill factor Efficiency η max Concentration [x, AM1.5d, low AOD, 1000 W/m²] 16
17 FLATCON Development of High-concentration Photovoltaics at Fraunhofer ISE: Cells and Systems abbreviates: Fresnel Lens All-Glass Tandem Cell Concentrator 17
18 The FLATCON concept 100 mm 18
19 The FLATCON concept 19
20 20
21 The FLATCON Concept Further Developments Secondary Optics: reflective reduction of optical losses low material costs refractive decrease of angular sensitivity enables higher concentration 21
22 The FLATCON Concept Further Developments Refractive Secondary Optics: 40x40 mm² Fresnel lens 4.15 mm² solar cell 0.6 acceptance angle 40x40 mm² Fresnel lens 4.15 mm² solar cell secondary lens 1.1 acceptance angle I SC normalized [rel. units] with secondary lens without secondary lens Angular Misalignment [ ] 22
23 The FLATCON Concept Further Developments Reflective Secondary Optics: FLATCON module 40x40 mm² Fresnel lens 4.15 mm² solar cell 48 cells series connected Ga 0.5 In 0.5 P/Ga 0.99 In 0.01 As/Ge 23
24 The FLATCON Concept Further Developments Efficiency of 28.5 % reached for module equipped with reflective secondaries 48 cells series connected Ga 0.5 In 0.5 P/Ga 0.99 In 0.01 As/Ge Cell efficiency 34% Current [ma] Time 14:39 ID I SC = 141 ma V OC = V FF = 82.5 % DNI = 734 W/m 2 T(Ambient) = 23.0 C η = 28.5 % 20 Aperture Size: 768 cm² no temperature correction Voltage [V] 24
25 Photovoltaic Power Plants with MJC - ISFOC Power plant installation close to Portellano (Spain) FLATCON installation by the company Concentrix-Solar Spin-off of Fraunhofer ISE 25
26 Thank you for your attention, and to all people who have contributed! 26
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