3D Wirebondless IGBT Module for High Power Applications Dr. Ziyang GAO Jun. 20, 2014

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1 3D Wirebondless IGBT Module for High Power Applications Dr. Ziyang GAO Jun. 20,

2 Outline Background Information Technology Development Trend Technical Challenges ASTRI s Solutions Concluding Remarks 2

3 Switchable Power (W) IGBT s Feature & Applications Power semiconductors are mainly used in the circuits of inverters/ converters for switching & converting of electricity. Unique features of IGBT modules: Wide switching frequency (1KHz 100KHz); High switching power (1KW 4MW); and Low switching power loss. 10M 1M 100K 10K 1K 100 ASTRI s focus Home Appliances Transportation IGBT Module High Power IGBT Module w/ Medium Power New Energy New Energy Motor Control Robotics & EV 100 1K 10K 100K 1M Switching Frequency (Hz) 3

4 Billion, USD IGBT s Application to EV & HEV IGBT: Emphasized area in the Chinese government s 12 th Five-Year Plan on Key Energy Conservation Technologies, including New Energy & New Energy Vehicles. Source: Yole, 2013 EV/HEV is expected to be the key IGBT market driver. 4

5 IGBT Packaging & Module Manufacturing of power module consists of 6 major steps. Back-end & packaging contribute to ~48% of IGBT module cost. 5

6 Outline Background Information Technology Development Trend Technical Challenges ASTRI s Solutions Concluding Remarks 6

7 Power Density (KW/cm2) Wafer Thickness (um) Evolution of IGBT Technologies (1/2) IGBT Wafer Development Trend

8 Evolution of IGBT Technologies (2/2) Flexible Foil & Sintering Ag (Semikron, 2011) Plated Cu (Siemens, 2012) Cu Lead (Honda, 2010) Leadframe (Denso, 2008) Flip Chip (Delphi, 2010) 2016 High Power & Thermal s 2000 s Molded Module (Mitsubishi, 2013) Classic Design 8 SiN Baseplate (Honda, 2006) AlN Substrate (Denso, 2010) Baseplate / Heatsink (Infineon, 2010)

9 Outline Background Information Technology Development Trend Technical Challenges ASTRI s Solutions Concluding Remarks 9

10 Power Electronics v.s. Microelectronics Power electronics LED Microelectronics Power Heat Flux Density (W/cm 2 ) Reliability Product Lifetime Cooling Approaches Microelectronics 100W (Pentium 4) 100 (Pentium 4) 1.1 g-level (30 minutes) ~5 years Forced air Power 10 electronics 120KW (100A IGBT) 1,200 (100A IGBT) 20 g-level (2 hours) >10 years Liquid cool

11 Super High Heat Dissipation Silicone IGBT chip TIM 1 Single side cooling only! Cu pattern Substrate Cu pattern TIM 2 Company I Thermal Resistance (ºC/KW) IGBT Chip 0.6 TIM1 0.6 DBC Substrate 4.4 TIM Base Plate 0.7 Module Thickness Input Power Junction Temperature mm 0.68 MW Up to 120ºC Potential Solutions Base plate New materials (e.g., AIN substrate, nano-silver die attach, etc.); New interconnect and/or structure (e.g., wirebondless, combined baseplate & heatsink, etc.). 11

12 Interconnect Long-term Reliability Wire Lift-off (10x10mm 2 ) 12 Die Tilt Creep & Cracking Overshoot voltage under different interconnects

13 Outline Background Information Technology Development Trend Technical Challenges ASTRI s Solutions Concluding Remarks 13

14 Delivering Technologies: 3D Wirebondless Structure Wirebond based IGBT module ASTRI s 3D wirebondless IGBT module Design Concepts: 3D structure replacing wirebond interconnects Microstructure design on ceramic substrate for better reliability Surface treatment for enhancing surface wetting Advantages: Controllable solder-based bondline thickness SMT compatible assembly process to improve throughput Compatible to DBC substrate fabrication process 14

15 Reliability and Electrical Performance Module for Electrical Test Wirebond 3D-PEM Tested at China North Railway Co. Ltd. Electrical Performance 96% & 72% parasitic resistance & inductance reduction, respectively; 70% overshoot voltage reduction. Reduced 70% voltage overshoot! 15

16 Junction temperature ( C) Heat Dissipation Coolant in Single side, WB-based Double side, bumped-based Temperature contours of 3D-PEM >35% thermal enhancement Power dissipation (W) Comparison of junction temperatures. 16 Simulated flow patterns and temperature distributions of coolant.

17 HKSTP-ASTRI SiP Line Wafer Dicing Pick &Place Vacuum Reflow Stencil Print +Pick & Place Busbar Welding Reflow Underfill & Cure Front-end Back-end HKSTP-ASTRI SiP Line was ready in Aug The line has 24 major equipments to support the process developments of new packages and small volume production. 17

18 HKSTP-ASTRI WLP Line 18 HKSTP-ASTRI Wafer-Level-Packaging Line is under construction and will be ready by Q The line has 12 major equipments to support the process development for TSV and other wafer level packages.

19 Example: UBM Fabrication for IGBT Wafers Post-wafer level processing for incoming IGBT wafers. 1200V/100A IGBT wafer with 5~8um Ni UBM 19

20 Concluding Remarks IGBT has been increasingly applied to many products, from home appliances, motor control, robotics, EV, new energy, to transportation. High-end IGBT module development faces many technical challenges, such as interconnect long-term reliability, module harsh environment failure, and super high heat dissipation. With the support of HKSTP-ASTRI SiP/WLP lines, ASTRI can provide one-stop total solution to local industry, including module design, process recipes, prototype samples, performance testing, and small volume pilot run. 20

21 End of Presentation Thank you. Suggestions are welcome! Contact us: Dr Ziyang Gao Tel: (852) Our corporate website: 21

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