PCN Title: Additional FAB Source (TPSCo), Additional Assembly/Test Site (SAT) and BOM (Bill of Materials) on select devices

Transcription

1 DATE: 18 th July, 2016 PCN #: 2239 PCN Title: Additional FAB Source (TPSCo), Additional Assembly/Test Site (SAT) and BOM (Bill of Materials) on select devices Dear Customer: This is an announcement of change(s) to products that are currently being offered by Diodes Incorporated. We request that you acknowledge receipt of this notification within 30 days of the date of this PCN. If you require samples for evaluation purposes, please make a request within 30 days as well. Otherwise, samples may not be built prior to this change. Please refer to the implementation date of this change as it is stated in the attached PCN form. Please contact your local Diodes sales representative to acknowledge receipt of this PCN and for any sample requests. The changes announced in this PCN will not be implemented earlier than 90 days from the notification date stated in the attached PCN form. Previously agreed upon customer specific change process requirements or device specific requirements will be addressed separately. For questions or clarification regarding this PCN, please contact your local Diodes sales representative. Sincerely, Diodes Incorporated PCN Team DIC-034 R3 Page 1 of 3

2 PRODUCT CHANGE NOTICE PCN-2239 REV 00 Notification Date: Implementation Date: 18 th July, th Oct, 2016 Product Family: Change Type: PCN #: Analog Semiconductors TITLE Additional Fab/AT Source and BOM 2239 Additional FAB Source (TPSCo), Additional Assembly/Test Site (SAT) and BOM (Bill of Materials) on select devices DESCRIPTION OF CHANGE This PCN is being issued to notify customers that in order to assure continuity of supply, Diodes has qualified an additional wafer Fab source (TPSCo) TowerJazz Panasonic Semiconductor Co., Ltd. located in Japan, and BOM (Bill of Materials) on selected devices manufactured in (SAT) Diodes Incorporated / Shanghai, China. Full electrical characterization and high reliability testing has been completed on representative part numbers. IMPACT Continuity of Supply. PRODUCTS AFFECTED Table 1 Qualify Additional Fab Source (TPSCo) Table 2 Qualify Additional Fab Source (TPSCo) and Data Sheet Change Datasheet Spec. change (adjusted typical "Tone amplitude pk -pk" from 600mV to 650mV to match industry standard, no limit changes) Table 3 Qualify Additional Fab Source (TPSCo) and Additional Assembly Site (SAT) Table 4 Qualify Additional Fab Source (TPSCo) and Additional assembly BOM Additional Qualified lead frame TSOT23-5 D & Mold compound CEL1700HF40SK-D3 Manufacturer s Notice: For More Information Contact: Data Sheet: WEB LINKS DISCLAIMER Unless a Diodes Incorporated Sales representative is contacted in writing within 30 days of the posting of this notice, all changes described in this announcement are considered approved. DIC-034 R3 Page 2 of 3

3 Table 1 - Qualify Additional FAB Source (TPSCO) AP65550SP-13 AP65450SP-13 AP65550FN-7 AP65452SP-13 AP65552SP-13 AP65353SP-13 AP65453SP-13 AP65355FN-7 AP65455FN-7 AP65352SP-13 AP65454SP-13 ZLPM8014JB20TC AP3064MTR-G1 AP3064P-G1 Table 2 Qualify Additional FAB Source (TPSCO) and Data Sheet Change ZLPM8010JB20TC ZLPM8011JB20TC ZLPM8012JB20TC Table 3 Qualify Additional FAB Source (TPSCO) and Additional Assembly Site (SAT) AP3436DNTR-G1 AP3436ADNTR-G1 Table 4 - Qualify Additional FAB Source (TPSCO) and Additional BOM AL8808WT-7 DIC-034 R3 Page 3 of 3

4 Diodes Incorporated Discrete and Analog Semiconductors Qualification Report PCN-2239 Manufacturer No.: Additional FAB Source (TPSCo), Additional Assembly/Test Site (SAT) and BOM (Bill of Materials) on select devices Revision: 0 Date: Qualified By: Diodes Incorporated Also Applicable To: The part numbers listed in the associated PCN are Qualified by Similarity (QBS) to the devices included in this report. Please go to for current data sheets on associated devices Prepared By: Diodes US Document Control Date Approved By: Diodes US QRA Department Date The information contained herein is DIODES INCORPORATED PROPRIETARY information. Reproduction of this document, disclosure of the information, and use for any purpose other than the conduct of business with Diodes is expressly prohibited DIODES INCORPORATED 4949 Hedgcoxe Road, Suite # 200, Plano, TX USA

5 Certificate of Design, Construction & Qualification Grade 0 40C to +150C ambient operating temperature range Description: AEC Q100 Qualification Grade 1 40C to +125C ambient operating temperature range Automotive Grade Grade 2 40C to +105C ambient operating temperature range Grade 3 40C to +85C ambient operating temperature range Grade 4 0C to +70C ambient operating temperature range Qual Device 1 Qual Device 2 Qual Device 3 QBS device 1 QBS device 2 Part Number AL8807QMP 7 AL8807BQMP 7 AL8806QMP 7 AL8807AMP AL8806QMP 7 Automotive Grade Package MSOP 8 EP MSOP 8 EP MSOP 8 EP MSOP 8 EP MSOP 8 EP MSL Level Package Size 3 X 2.95 X X 2.95 X X 2.95 X X 2.95 X X 2.95 X 0.86 Die Quantity (eg. Die per package) Die Name Diodes AP8805DN AP8805GN AP8805BN AP8805EN AP8805BN Die Name TPSCo AD A0 8805DN AD A0 8805GN AD A0 8805N AD A0 8807EN AD A0 8805N Die Name Tower ZTAP8805D ZTAP8805G ZTAP8805B ZTAP8805E ZTAP8805B Die Size (W/L/Thickness 1.63*1.11* *1.11* *1.11* *1.11* *1.11*203 Die Process / Technology T18H4PWS4S T18H4PWS4S T18H4PWS4S T18H4PWS4S T18H4PWS4S Wire Bond Material (Au, Cu, Al) Cu Cu Cu Cu Au Wire Diameter 20um 20um 20um 20um 25um Wafer FAB TPSCo TPSCo TPSCo TPSCo TPSCo Wafer Diameter 8" 8" 8" 8" 8" Bond Type (at Die) Ball, thermosonic Ball, thermosonic Ball, thermosonic Ball, thermosonic Ball, thermosonic Bond Type (at LF) Stitch, thermosonic Stitch, thermosonic Stitch, thermosonic Stitch, thermosonic Stitch, thermosonic No. of bond over active area Glass Transistion Temp Lead Material Manufacture Header plating (Die Land Area) Max Junction Temp Max Thermal resistance Junc (case) Max Thermal resistance Junc (amibent) Front Metal Type 2um Al,Cu0.5% 2um Al,Cu0.5% 2um Al,Cu0.5% 2um Al,Cu0.5% 2um Al,Cu0.5% Die passivation thickness range 3000Å Nitride 3000Å Nitride 3000Å Nitride 3000Å Nitride 3000Å Nitride No of masks Steps DB Epoxy/Solder Type 84 1LMISR4 84 1LMISR4 84 1LMISR4 84 1LMISR4 84 1LMISR4 Die Attach Material Epoxy Epoxy Epoxy Epoxy Epoxy Front Metal Thickness 2um 2um 2um 2um 2um Leadframe Type MSOP 8 EP B MSOP 8 EP B MSOP 8 EP B MSOP 8 EP B MSOP 8 EP B Leadframe Material C7025 C7025 C7025 C7025 C7025 Molding Compound Type CEL1700HF40SK D3 CEL1700HF40SK D3 CEL1700HF40SK D3 CEL1700HF40SK D3 CEL1700HF40SK D3 Green Compound (Yes/No) Y Y Y Y Y Lead Free (Yes/No) Y Y Y Y Y Assembly Site SAT SAT SAT SAT SAT FT Test Site SAT SAT SAT SAT SAT Reliability Test Site ZUK ZUK ZUK ZUK ZUK Reliability Testing Test Test Name Test Conditions Duration / Limits Test Method Test Group Lots /SS Test Temp X = Test Needed, TX143 X = Test Needed, TX142 X = Test Needed X = Test Needed, TX157 X = Test Needed, TX134 Test Group A Accelerated Environment Stress Tests JESD22 A113 JEDC J MSL1 Pre cond Pre Conditioning Bake 125C 24 Hrs A 3 WF 0/154 Room 0/276 Pass 0/231 Pass QBS to QBS device 1 0/154 Pass STD 020 Soak 85C, 85% RH 168Hrs JEDC J STD 020 A 3 WF 0/154 Room 0/276 Pass 0/231 Pass QBS to QBS device 1 0/154 Pass IR reflow 260C 3 cycles JEDC J STD 020 A 3 WF 0/154 Room 0/276 pass 0/231 Pass QBS to QBS device 1 0/154 Pass THB 85C, 85%RH Vcc max 85C, 85%RH Vcc max 168 JESD22 A101 A 3 WF 0/77 Room/Hot 0/77 Pass 0/77 Pass QBS to QBS device 1 0/77 Pass 500 JESD22 A101 A 3 WF 0/77 Room/Hot 0/77 Pass 0/77 Pass QBS to QBS device 1 0/77 Pass 1000 JESD22 A101 A 3 WF 0/77 Room/Hot 0/77 Pass 0/77 Pass QBS to QBS device 1 0/77 Pass UHST Unbiased Highly Accelerated Stress Test JEDD22 A118 A 3 WF 0/77 Room 0/77 Pass 0/77 Pass QBS to QBS device 1 0/77 Pass Temperature Cycle 65C 150C (Grade 1) 500 cycles JEDD22 A104 A 3 WF 0/77 Room/Hot 0/77 Pass 0/77 Pass QBS to QBS device 1 0/77 Pass TC 65C 150C (Grade 1) 1000 cycles JEDD22 A104 A 3 WF 0/77 Room/Hot 0/77 Pass 0/77 Pass QBS to QBS device 1 0/77 Pass 40/125C (Grade 1) (22 Power TC Power Temperature Cycle 1000 cycles JESD11 A105 A 1 WF 0/45 Room/Hot 0/45 Pass must be pre con) HTSL High Temp Storage Life 150C (Grade 1) 168 Hrs JESD11 A103 A 1 WF 0/45 Room/Hot 0/45 Pass 150C (Grade 1) 500 Hrs JESD11 A103 A 1 WF 0/45 Room/Hot 0/45 Pass 150C (Grade 1) 1000 Hrs JESD11 A103 A 1 WF 0/45 Room/Hot 0/45 Pass Test Group B Accelerated Lifetime Simulation Tests HTOL High Temp Operating Life Ta=125C, 100% Vcc 168 Hrs JESD22 A108 B 3 WF 0/77 Room/Hot/Cold 0/77 Pass 0/77 Pass QBS to QBS device 2 0/77 Pass or Ta=150 for 408 hrs 500 Hrs JESD22 A108 B 3 WF 0/77 Room/Hot/Cold 0/77 Pass 0/77 Pass QBS to QBS device 2 0/77 Pass 1000 Hrs JESD22 A108 B 3 WF 0/77 Room/Hot/Cold 0/77 Pass 0/77 Pass QBS to QBS device 2 0/77 Pass ELFR Earlier Life ure Rate Ta=125C, 100% Vcc 48 hrs AEC Q B 3 WF 0/800 Room/Hot 0/800 Pass 0/800 Pass QBS to QBS device 2 0/800 Pass Test Group C Package Assembly Integrity Tests WBS Wire Bond Shear JESD22 B116B Cpk>1.66 AEC Q C 30 Bonds 0/5 Room 0/5 Pass 0/5 Pass QBS to QBS device 1 0/5 Pass 0/5 Pass WBP Wire Bond Pull MIL STD Cpk>1.66 MIL STD C 30 Bonds 0/5 Room 0/5 Pass 0/5 Pass QBS to QBS device 1 0/5 Pass 0/5 Pass SD Solderability >95% Coverage 5 Seconds JESD22 B102 C 1 WF 0/15 Room 0/15 Pass 0/15 Pass QBS to QBS device 2 0/15 Pass JESD22 B100 JESD22 Ppk>1.67 PD Physical Dimensions Package Outline C 3 Assy Room 0/10 Pass 0/10 Pass QBS to QBS device 2 0/10 Pass B108 Cpk>1.33 Test Group D Die Fabrication Realibility Tests EM Electromigration D Room Pass Pass Pass Pass Pass TDDB Time Dependant Dieletric Breakdown D Room Pass Pass Pass Pass Pass HCI Hot Carrier Injection D Room Pass Pass Pass Pass Pass NBTI Negative Bias Temperature Instability D Room Pass Pass Pass Pass Pass SM Stress Migration D Room Pass Pass Pass Pass Pass Test Group E Electrical Verification ESD Human Body Model HBM (AEC Q ) + 2KV (AEC Q ) E 1 WF 0/3 Room/Hot 0/3 Pass 0/3 Pass QBS to QBS device 2 0/3 Pass Machine Model MM ( AEC Q ) + 200V ( AEC Q ) E 1 WF 0/3 Room/Hot 0/3 Pass 0/3 Pass QBS to QBS device 2 0/3 Pass Charged Device Model CDM (AEC Q ) + 750V (AEC Q ) E 1 WF 0/3 Room/Hot 0/3 Pass 0/3 Pass QBS to QBS device 2 0/3 Pass LU Latch up (Class II) Max Operating Ta or Tc or Tj 100mA JESD78 E 1 WF 0/6 Room/Hot 0/6 Pass 0/6 Pass QBS to QBS device 2 0/6 Pass ED Electrical Distributions Electrical Distributions AEC Q E 3 WF Room Comp Pass Comp Pass QBS to QBS device 2 Comp Pass Char Characterization Typ 40C, 0C, 25C, 85C, 125C Operating Range AEC Q003 E 0/30 Room 0/30 Pass 0/30 Pass 0/30 Pass Summary: S Mann Submitted By: Approved By: Dong Mun 02/04/16