DBH Automotive Program. Oct, 2010

Transcription

1 DBH Automotive Program Oct, 2010

2 DBH Automotive Program DBH Automotive Quality Policy Driving Continuous Improvement to Supply Long-term Reliable Product Achieving Quality Level in All that We Do to Exceed Customer Expectations Screening Controls with Visibility & Traceability in the Manufacturing Process All DBH Fabs Certified ISO/TS16949 since 2003 Integrated Quality Management System DBH Automotive Program Robust Technology & Design Kit Rigorous Process Qualification Criteria Closed-loop CIP (Continuous Improvement Plan) Flow Tightened Defect Management and Yield Performance FMEA (Failure Mode and Effect Analysis) 15 Years Record Retention Fully Equipped Failure Analysis & 8D Problem Solving 2 / 16

3 Many Concentration Areas Process Technology Rich Component Set Safe Operating Area Guard Rings P+ Substrate Design Kit 180C SPICE Models IP Characterization NVM Characterization Robust ESD Automotive IP Differentiated Blocks Proven IP Providers IP Tailored to Process Certifications Dongbu HiTek Automotive Package Wafer Fabs Rigorous Change Control DPPM & Cpk Focus Certifications Dual-Fab Strategy Reliability Grade-0 Mission Profile 150C Characterization Integral to Process Dev t Ecosystem Partners Automotive Expertise Design Houses Package Houses 3 / 16

4 BD um, 60V Automotive Process Technology Features Baseline: 1P3M (up to 4M) M1 Pitch: 1.0 µm Top Metal: 3 μm Al (Option) LVCMOS: 3.3V or 5V HVCMOS: 8V CMOS: Low-V T CMOS: Isolated NLDMOS: 7V 60V NVM: PLDMOS: 8V 60V PDK: DECMOS: 12V 60V Available: NPN: 15V, 25V RES: Poly 320, 2K Ω/sq CAP: 5V MIM 1.87 ff/µm 2 Fuse, MTP Cadence, Others Now V-NPN LSD LDMOS 3.3V CMOS Dev d for Automotive Char d for Automotive Qual d for Automotive P+ Substrate NBL, Epi, & Deep N+ Guard Rings Multiple Fabs 200 WAS Parameters K s of Wafers/Month 4 / 16

5 MS um, 1.8V/3.3V Automotive Process Technology Features 0.18µm 1Poly 6Metal Dual Gox Process for Mixed Signal Certified by Automotive Customer for Automotive Ethernet Solution Devices LV CMOS: 1.8V, HV CMOS : 3.3V Isolated CMOS by Deep-Nwell (+1 mask) PNP: 1.8V Vertical/Lateral, 3.3V Vertical NPN: 1.8V Vertical Capacitor: 3.3V MIM 1.0 ff/µm 2 (+1 mask) High-R Resistor: 1Kohm/sq (+1 mask) Cadence Process Design Kits (PDK) Standard Cell Library, IO, Memory Compiler 5 / 16

6 DBH Certification Roadmap Sony GP Samsung S-P ISO27001 OHSAS18001 Green Partner Environmental - Sony GP (Jun.12, 2006) - Samsung SP (Mar.04, 2009) ISO/TS16949 Information Security ISO27001 (Oct.02, 2006, BSI / UKAS) ISO9001 Occupational Health & Safety Management System OHSAS18001 (Nov.03, 2004, URS / UKAS) ISO14001 Quality Management System ISO/TS16949 (Dec.09, 2003, BSI / IATF) for automotive Quality Management System ISO9001: 2000(update to ISO version 2000, Dec.09, 2003, BSI / IATF) Environmental Management System ISO14001(Jan.24, 2002, URS / UKAS) 6 / 16

7 Automotive Market Product Areas 7 / 16

8 Automotive Production Performance Proven Track Record of Driving DPPM Levels Down Over Time Based on Data from Multiple Tier-1 Automotive Customers US & Japan Regions DPPM Focus During Development, then into Production 8 / 16

9 Automotive IP from Ecosystem Partners World Class Technologies for Analog and Power The Analog POWERHouse Connection Automotive Programs for Robust Solutions LIN Transceiver Compatible to LIN Spec Rev 2.1 Operating voltage up to 27V Slew control for good EMI behavior LIN Bus pin DC range -40V to +40V Fully integrated input receiver filter 500+ Years Experience ISO 9001 Certified Low-Side FET Pre-driver Integrated power FET protection clamps on both gate and drain terminals Gate pre-drive control input is CMOS compatible, high impedance port with hysteresis Gate pre-drive monitors for On-state shorted-load and Off-state open-load fault protection 9 / 16

10 Rigorous Process Qualification Criteria Automotive Process Qualification Quick WLR Full WLR PLR Quick validation of devices during process development Intrinsic Component Level Reliability Product qualification MOS CHC Reliability Interconnect Reliability Resistor Reliability Bipolar Reliability Diode Integrity Dielectric Integrity N/PMOS BTI IMD Integrity Transistor Reliability - N/PMOS - N/PMOS - N/P LDMOS & N/P DEMOS - N/P LDMOS & N/P DEMOS Gate Oxide N/PMOS Contact/Via, Metal Accelerated Lifetime Stress - EFR, HTOL, THB Accelerated Environment Stress - HTS, LTS, PCT, TC Electrical Verification - ESD, Latch-up Quick WLR: quick wafer level reliability Full WLR: component base reliability (wafer level / package level) PLR: product level reliability (package level reliability ) 10 / 16

11 Extensive WLR Characterization Cum. Failure (%) Weibull plot for TDDB TTF plot for TDDB Ea TTF Aexp( γ * E) * exp( ) kt HCI Lifetime HCI Characterization Via fed lead_metal 1 (width=0.4um) Via fed lead_metal 2 (width=0.4um) Via fed lead_metal 3 (width=0.4um) Via fed lead_metal 1 (width=3.0um) Via fed lead_metal 2 (width=3.0um) EM Via fed lead_metal 3 (width=3.1um) Characterization Design Dependency ( Hrs ) 11 / 16

12 Closed-Loop Continuous Improvement Plan Monitoring Failure Event Data analysis Audit Readiness In-line Defect SPC PCM Test CP Data Abnormal Quality issue PCM scrap Low yield Corrective action CIP Root cause verification Control plan FMEA Periodic CpK review DM sampling RPN prioritization SEV, OCC, DET 8D report 1 page report 8D approach EFA, PFA RPN* = Risk Priority Number SEV* = Severity, OCC* = Occurrence, DET* = Detection 12 / 16

13 DBH Automotive Audit Success Tier-1 Supplier Audit Audit Results: 1) Degree of conformity: ) Grade: A 3) Rating: Strategic Component Supplier Audit Comments: 1) Very Clean Fab 2) Very Well Disciplined 3) Preparation for Our Audit Was Evident 4) Training Program Looks Excellent 5) Dongbu Has Been Very Cooperative 6) Excellent Job Responding to Open Items 13 / 16

14 AEC-Q100 Qualification Requirements Product Qualification Group A Accelerated Environment Stress Tests PC, THB, TC, HTSL Process Qualification Group D Die Fabrication Reliability Tests EM, TDDB, HCI, NBTI, SM Group B Life Tests HTOL, ELFR, NVM Group D Tests Are Fully Supported by DBH Group C Package Assembly Integrity Tests Bond Shear, Bond Pull, Solderability, Solder Ball Shear, Lead Integrity Group E Electrical Verification Tests Pre/Post Stress Test, ESD, Latchup, Fault Grading, Characterization Definitions: PC = Pre-Conditioning THB = Temperature Humidity Bias TC = Temperature Cycling HTSL = High Temperature Storage Life HTOL = High Temperature Operating Life ELFR = Early Life Failure Rate NVM = Non-Volatile Memory (Endurance, Data Retention) EM = Electro-Migration TDDB = Time Dependent Dielectric Breakdown HCI = Hot Carrier Injection NBTI = Negative Bias Temperature Instability SM = Stress Migration 14 / 16

15 Record retention 15 years data retention Document Contract review document and record Qualification document Customer specification Inspection and test data Product identification and traceability Lot history records Incoming inspection record Shipping report Internal audit recall and corrective action record Period Indefinitely Indefinitely Indefinitely 15 years 15 years 15 years 15 years 15 years 15 years 15 / 16

16 Thank you 16 / 16