INFOVION S MAIN PRODUCTS

Transcription

1 INFOVION S MAIN PRODUCTS CONTENTS Cluster Sputter System Multi Cathode Sputter System Combinatorial IBSD System Combinatorial Sputter System IBSD System Roll Coating Sputter System RTA System MOCVD System Ion Source Ion Energy Analyzer Effusion Cell Neutral Beam Etcher

2 Cluster Sputter System INFOVION s Cluster Sputter System Provides The Best Available Value for Wide Ranging Research and Production Applications

3 Cluster Sputter System Operation Module : Process and Transfer Modules Sputter Source : 6 Magnetron Sputter Sources Power : RF & DC Power Selectable Gas Control : Ar, O2, N2 Heating Module : Up to 600 C Fully Automated Operating System

4 Cluster Sputter Software Program-1 Program Features Display of Cluster sputter system & process condition Fully Automated Control System Safety Interlock System for Instrument & users User authorization Sign up Mode

5 Cluster Sputter Software Program-2 Display of PM#1,2,3 image & full condition Manual Control Mode Display of Pump, Valve Condition & Deposition Time

6 Cluster Sputter System Key Features Simultaneous Sputter Deposition in separate 4-Chamber Possible to Change RF & DC Power easily by using RF/DC Change-over switch Up to Thirteen RF/DC Magnetron Sputter Sources Excellent Film Uniformity on a 6 wafer Fully Automated Operating System Special Options are available for our customers Base System Features Deposition Mode Co-Sputter Deposition Mode Sputter Source Thirteen 6" Magnetron Sputter Source (UHV & HV Type) Wafer Uniformity ±5% on 6" diameter wafer Power Supplies Seven 1000W RF Power Supply & Five 2000W DC Power Supply Substrate Heating Capacity Up to 600 (Uniformity ±5 ) Substrate Z-Motion 0~100mm Substrate RPM Up to 100RPM Cassette Chamber Capacity Up to sixteen wafers Gas Control Ar, O 2, N 2 Ultimate pressure PM1,2,3 1 x 10-7 Torr PM4 5 x 10-8 Torr Operating System HMI Software / PLC Based Process Control Fully Automated System Safety Interlock System

7 Multi Cathode Sputter System Applications Semiconductor Devices Conductive Metal / Resistive Metal / Insulating Films Transparent Electrical Conductors (ITO) Lens Coatings (Reflective / Anti-reflective / Hard / Color) Thin Film Sensors Magnetic Storage Media and Heads (HD, GMR, TMR) Photovoltaic Thin Films (Solar Cells) Base System Features Deposition Mode Co-Sputter Deposition Mode Sputter Source Three 6" Magnetron Sputter Source (HV Type) Wafer Uniformity ±5% on 6" diameter wafer Power Supplies Three 1000W RF Power Supply Substrate Heating Capacity Up to 500 (Uniformity ±5 ) Substrate Z-Motion 0~100mm Substrate RPM Up to 100RPM Load Lock Chamber Fully Automated Wafer Transfer System Gas Control Ar, O 2, N 2 Ultimate pressure 1 x 10-6 Torr Operating System HMI Software / PLC Based Process Control Fully Automated System Safety Interlock System

8 Combinatorial IBD System-1 Combinatorial Synthesis Method Sequential Ion Beam Sputter System Co-sputtering Ion Beam Deposition System Moving Mask System & Substrate Rotation Excellent Film Uniformity on a 6 wafer Key Features Discovery of New Ternary & Binary Material Using Combinatorial Synthesis High-throughput Characterization

9 Combinatorial IBD System-2 Deposition Mode : Step, Wafer layer & Co-Sputtering Modes Operation Module : Process and Transfer Modules Sputter Source : RF Ion Source with 6cm beam grid RF Generator : 1000W Beam Energy : 100~1500 ev Gas Control : Ar, O2, N2 Heating Module : Up to 600 C User friendly Load-Lock Lock System Fully Automated Operating System

10 Combinatorial IBD System-3 Combinatorial IBSD Process Features To prepare Binary & Ternary phase alloying at a high temp. at one time Rapid Investigation to find ideal composition of numerous compounds Excellent film uniformity on the 6 wafer ( > 98% ) Possible to Change deposition modes (Combinatorial & Co-sputtering) Atomically controlled layer-by-layer thin films 100 C 0 50 A B 100 Ternary Materials Phase Diagram Base System Features Deposition Mode Step, Wafer layer and Co-sputtering Modes Sputter Source RF Ion Beam Sputter Source Wafer Uniformity ±2% on 6" diameter wafer RF Power Supplies 1000W RF Power Supply Ion Beam Sputter DC Power Beam Voltage: 1500V/1000mA, Accel Voltage: 1500V/300mA Substrate Heating Capacity Up to 600 (Uniformity ±5 ) Substrate Z-Motion 0~100mm Substrate RPM Up to 100RPM Load Lock Chamber Fully Automated Wafer Transfer System Gas Control Ar, O 2, N 2 Ultimate pressure 1 x 10-6 Torr Operating System HMI Software / PLC Based Process Control Fully Automated System Safety Interlock System

11 Combinatorial Sputter System Key Features Discovery of New Ternary & Binary Material Using Combinatorial Synthesis High-throughput Characterization Base System Features Deposition Mode Step and Wafer layer Modes Sputter Source 3"-6" Magnetron Sputter Sources Wafer Uniformity ±5% on 6" diameter wafer RF Power Supplies 1000W RF Power Supply Substrate Heating Capacity Up to 600 (Uniformity ±5 ) Substrate Z-Motion 0~100mm Substrate RPM Up to 100RPM Load Lock Chamber Fully Automated Wafer Transfer System Gas Control Ar, O 2, N 2 Ultimate pressure 1 x 10-6 Torr Operating System HMI Software / PLC Based Process Control Fully Automated System Safety Interlock System

12 Ion Beam Sputter Deposition System System Features Optimal Ion Beam Sputter Deposition Motorized Three Target Changing System Dynamic Sequential Layer by Layer Deposition Method Substrate Rotation, Z-Motion & Heating Enhanced HMI Software Excellent film uniformity on a 6 wafer Corresponding to 300mm Wafer Fully Automated Operating System Various User Defined Options

13 Ion Beam Sputter Deposition System Ion Beam Deposition Advantages Pinhole-free films with enhanced adhesion due to higher ion energy Reduction of film stress and film densification are greatly enhanced by using ion assist gun Higher film purity thanks to Low operation pressure (low 10-4 Torr) Independent control of ion energy and flux that provides control of film microstructure, stoichiometry and stress Stable deposition rates and Excellent film uniformity Base System Features Deposition Mode Sequential Layer by Layer Deposition Mode Sputter Source RF Ion Beam Sputter Source Assist Source RF Ion Beam Assist Source Wafer Uniformity ±2% on 6" diameter wafer RF Power Supplies 1000W RF Power Supply Ion Beam Sputter DC Power Beam Voltage: 1500V/1000mA, Accel Voltage: 1500V/300mA Ion Beam Assist DC Power Beam Voltage: 1000V/1000mA, Accel Voltage: 1000V/1000mA Substrate Heating Capacity Up to 600 (Uniformity ±2 ) Substrate Z-Motion 0~100mm Substrate RPM Up to 100RPM Load Lock Chamber Fully Automated Wafer Transfer System Gas Control Ar, O 2, N 2 Ultimate pressure 1 x 10-6 Torr Operating System HMI Software / PLC Based Process Control Fully Automated System Safety Interlock System

14 Ion Beam Sputter Deposition System Advantages Ar + ZnO target Atomic layer growth due to high surface mobility Atomically smooth surface due to high surface mobility Excellent film uniformity Higher film purity thanks to Low operation pressure (low 10-4 Torr) Ion Beam Gun Acquire kinetic energy and still maintain directionality and kinetic energy Roughness analysis for Cu thin film (20nm thick on SiO2, Room Temp.) By Ion Beam Sputter By Sputter Plastic a-zno Atomic Layer Growth!!! Rms Rough Ave Rough Rms Rough Ave Rough 9.21A 7.26A 69.2A 55.2A

15 Roll Coating Sputter System-1 System Features Web winding module - up to 200 mm wide Well proven rectangular magnetron sputter source Tension self stabilizing system Automated Door Access System High heating capacity to deposit the desired atoms Excellent film uniformity Fully Automated Operating System Various User Defined Options

16 Roll Coating Sputter System-2 Sputter Source & Heater Power On Rectangular Magnetron Sputter Sources Base System Features System Type Roll film Deposition System Sputter Source Three Rectangular Magnetron Sputter Sources Sample Type Ni-W Metal roll film RF Power Supplies 1000W Substrate Heating Capacity 25 ~ 700 (Uniformity ±5 ) Gas Control Ar, O 2, N 2 Ultimate pressure 1 x 10-6 Torr Operating System HMI Software / PLC Based Process Control Fully Automated System Safety Interlock System

17 Roll Coating Sputter System-3 Process Control System with Touch Screen System Features Deposition Process : Multi turn system Deposition Chamber : Main Chamber & Silver Chamber System Control : PLC program in PC control with Touch Screen Gas Control : Ar, O2, N2 Tension Self Stabilizer System Web winding module - up to 200 mm wide

18 Rapid Thermal Annealing System System Features Closed-loop temperature control with Pyrometer or Thermocouple Fast Digital PID temperature control Tubular Infrared Halogen Lamps allow very fast ramp rates Multi-zone control of Infrared Halogen Lamps Motorized Horizontal Motion Door with Quartz Tray Cold Wall Chamber Technology provides high process reproducibility Full PC control for editing recipes and process data logging Applications RTA (Rapid Thermal Annealing) RTO (Rapid Thermal Oxidation) Ion Implant Activation Contact alloying Oxidation and Nitridation Compound Semiconductor Annealing Crystallization and Densification

19 RTA System Performance Characteristics Temperature Range: 250 to 1200 Ramp Up Rate : 100 /sec Ramp Down Rate : 100 /sec (at high temp.) Steady State Temperature Stability: ±2 Steady State Time: 1~9999 sec ( 1~600 sec recommended) Wafer Size: Up to 6 inch Gas Mixing Capability with Mass Flow Controllers Pressure Range: Atmosphere to 10-3 Torr Base System Features Maximum Substrate Size Up to 6" Process Chamber Water-cooled Aluminum with quartz window Heating Source Multi-zone halogen lamp Fan lamp air cooling with heat exchanger High temperature version up to 1200 Temperature Control K-type Thermocouple (<1200 ) Pyrometer (<1250 ), Calibration system (option) Fast digital PID temperature controller Pumping System Rotary pump (400L/min) with moisture purifier Gas Control Three process gas lines with mass flow controllers Operating System Fully Automated System Safety Interlock System Human Machine Interface software

20 RTA Software Program Program Features User-Friendly Automatic Control System Semi Automatic Control System Recipe System Data Save System Data Analysis System Safety Interlock System

21 RTA Software Program Auto Control Semi Auto Control Graph Data Sheet

22 Rapid Cooling/Heating System System Features Closed-loop temperature control with pyrometer or thermocouple Tubular Infrared Halogen Lamps allow very fast heating ramp rates Convective cooling process by using LN2 showering onto sample surface Rapid Heat/Cool exchange following thermal process program to control sample property Fast and accurate vertical sample position control by using servo motor Full PC control for editing recipes and process data logging Safety interlock system Applications RTA (Rapid Thermal Annealing) RTO (Rapid Thermal Oxidation) Ion Implant Activation Contact alloying Oxidation and Nitridation Compound Semiconductor Annealing Crystallization and Densification

23 Rapid Cooling Processing System Performance Characteristics Temperature Range: 250 to 800 Ramp Up Rate : 100 /sec Ramp Down Rate : 100 /sec Steady State Temperature Stability: ±2 Steady State Time: 1~9999 sec ( 1~600 sec recommended) Sample Size: Up to 6 inch long metal strip Gas Mixing Capability with Mass Flow Controllers Pressure Range: Atmosphere to 10-3 Torr Base System Features Maximum Substrate Size 200X150X(0.5~10)mm Process Chamber Water-cooled Aluminum Chamber & Quartz Chamber Heating Source Multi-zone halogen lamp Fan lamp air cooling with heat exchanger High temperature version up to 800 Cooling Source Nitrogen, Argon, Liquide Nitrogen Low temperature version down to 300 Temperature Control K-type Thermocouple (<1200 ) Pyrometer (<1250 ), Calibration system (option) Fast digital PID temperature controller Pumping System Rotary pump (400L/min) with moisture purifier Gas Control Three process gas lines with mass flow controllers Operating System Fully Automated System Safety Interlock System Human Machine Interface software

24 MOCVD System System Features Patented unique design for gas stream High heating capacity to deposit the desired atoms on the wafer Possible to use various compositions of the gases Highly uniform thickness Excellent repeatability Low maintenance and high throughput

25 MOCVD System MOCVD Unique Showerhead Structure Base System Features Source Type Showerhead Input Gas Stream Up to 3 layers Substrate holder 2" size/3 stage (option) Substrate Heating Capacity Up to 1200 (Uniformity ±5 ) Substrate Motion Z-motion, Revolution, Rotation (Option) Using gas N2, O2, H2, NH3, SiH24 Mo Source 2 channels (Ga, Mn) Ultimate pressure 5 x 10-3 Torr Operating System PLC program control with Touch screen Fully Automated System Safety Interlock System

26 PECVD System System Features Dual Mixed Feature of PECVD and RTCVD Halogen Heating (1200 ) and RF Power Input Dry & Turbo, Rotary pumping Gas : Ar, N2, H2, NH2, SiH4, B2H6, PH3, TCS Liquid Direct Injection, MO source Deposit the desired films (Crystalline & Amorphous) on the wafer(4, 6 ) PC Automation & LCD (17 ) display

27 Evaporation System 8 inch Lift Off Dome 8 inch Planetary Dome System Features Used for extensive material coating process. Metal, oxide, nitride and multi layers. Lift-off dome and planetary dome make highly uniform thickness, excellent step coverage and repeatability. Fully automated computer controlled operating system with safety interlocks. Possible to select thermal evaporation or e-beam evaporation.

28 Neutral Beam Etcher Base System Features Etching Source Neutrally Charged Species Temperature control ESC Cooling Wafer size 6 inch Substrate Motion Z-motion Using gas Ar, O2, C2F6 Plasma Analysis B-Dot Probe, Ion Energy Analyzer Operating System PLC program control with Touch screen Fully Automated System Safety Interlock System

29 Ion Beam Milling System INFOVION s Ion Milling System utilizes a multi-platen, planetary (double rotation) stage assembly and a highly uniformity etch across each sample. System Features Main chamber Ultimate pressure: Turbo pumping High 10-7 Torr Ion gun -Beam aperture: Grid dia. 380 mm, Convex type - Ion beam energy: 1.5 KeV Substrate holder -Substrate Size : 3inch 5EA At Once installation possibility - 3inch Full Wafer & scrap Sample All use Substrate Holder - Rotation type: Double rotation planetary type, various etching angle - Motorized angle setting System Features Largest commercial broad-beam ion source Dia32 double walled, Water cooled Chamber Beam Uniformity : ± 5% over 30cm diameter Beam Power : eV, 5000mA Molybdenum, Self-aligning ion optics Double rotation planetary type Sample Stage Excellent repeatability Low maintenance and high throughput

30 CIGS Solar Cell Cluster System INFOVION s CIGS Solar Cell System Provides the Best Available Value for Wide Ranging Research and Production Applications System Features CIGS multi deposition system Single soda-lime glass (100x100/0.7~3t) Vacuum cluster system Separate entry/exit module PM 1 : Isolated CIGS evaporation module PM 2 : Ni, Al evaporation module PM 4 : AZO, ZnO sputter process module PM 5 : CIGS sputter process module

31 CIGS Solar Cell Cluster System INFOVION s CIGS Solar Cell System Provides the Best Available Value for Wide Ranging Research and Production Applications System Features Fully automation with data logging capabilities Single soda-lime glass (100x100/0.7~3t) Vacuum cluster system Separate entry/exit module PM 1 : CIGS sputter process module - RF & pulsed DC sputter - 4 Magnetron sputter gun / 3set - RF power: 600W / 1set - Pulse DC power: 800V 7.2A 150kHz / 2set - Substrate heating (max 650 ) PM 2 : AZO, ZnO sputter process module - 4 Magnetron sputter gun / 3set - RF power: 600W / 1set - Pulse DC power: 800V 7.2A 150kHz / 2set - Substrate heating (max 650 ) PM 3 : Ni, Al evaporation module - E-beam source: 25cc / 4 pocket / 1set - E-beam source shutter with air actuator - Substrate heating (max 650 ) PM 4 : Isolated CIGS evaporation module - Effusion cell evaporator - Isolated operation system (exclusive use load-lock) - 10cc Cu, In, Ga, Na cell source with shutter - 150cc Se, S cell source with shutter - Substrate heating (max 650 ) - EIES and thickness controller

32 In Line PDP System - In-line 형으로 70" 급 PDP 용 Glass 에 ITO( Indium-Tin Tin-Oxide), 금속박막, MgO 등을균일하게증착 - 진공 Chamber 의크기 : 5000mm(l) x 1410mm(h) x 300mm(w) - 양면 Sputter 코팅공정 : 4 Target Source 활용, 단위공정시스템자동화, 코팅수율 : 95% 이상, Tack Time : 5min/ Batch - 70" 급 PDP 용 ITO 박막코팅, 증착속도 : 400À/ min, 가시광선투과도 : 85% 이상, 코팅균일도 : ±7% 대면적 70" 급 Glass Sputtering System

33 Arc Sputter System System Features Arc Ion Sputtering System Oil Diffusion, Rotary Booster & Holding Pump Gas: Ar, N 2, H 2, C 2 H 2, GN 2 (Vent) PC, Automation & LCD (19 ) Display Plasma Gun 2300 x 80mm (Linear Anode Ion Source) Dia h x 1220Ø Water Cooled chamber Functional Coating System (Temp Max 450 ) Rotation, Revolution, Sample Stage Streed Arc Gun 80Ø 35ea Low Maintenance and High Throughput Sample 2200mm Ø220Ø Rotation Post 8ea Sample Bias Electric Magnet for Uniformity

34 INFOVION S Core Source & System Components

35 RF Ion Source INFO-RF-60G Base System Features Ion Source Type Beam Aperture Beam Energy Using Gas Cooling Type Plasma Chamber Plasma source Grid Configuration Beam Neutralization Mounting Configuration RF Ion Source 60Ф 100~1500eV Reactive & Inert gas Water cooling Quartz ICP Mo multi grids Plasma Bridge Neutralizer, RF Neutralizer on request Flange DN-160CF, DN-160ISO on request Features Contamination-free Ion Source High Flux with Wide Range Energy Reactive & Inert gas Operation Easy Maintenance Good Compatibility

36 Hollow Cathode Ion Source INFO-HC-55/55G Base System Features Ion Source Type Beam Aperture Beam Energy Using Gas Cooling Type Plasma Chamber Plasma source Grid Configuration Beam Neutralization Mounting Configuration Hollow Cathode Ion Source 55Ф 100~1000eV Reactive & Inert gas Water cooling Tantalum Mo multi grids Plasma Bridge Neutralizer, RF Neutralizer on request Flange DN-160CF, DN-160ISO on request Features Compatible with Reactive Conditions Wide Range Operation, easy-to-start Continuous Working Dual Chamber for Plasma Generation Various Application

37 Linear Ion Source-1 INFO-RF-60X450G Base System Features Ion Source Type Beam Aperture Beam Energy Using Gas Cooling Type Plasma Chamber Plasma source Grid Configuration Beam Neutralization Mounting Configuration RF Ion Source 60X450mm 100~1500eV Reactive & Inert gas Water cooling Quartz ICP Mo multi grids Plasma Bridge Neutralizer, RF Neutralizer on request Rectangular O-ring type flange Features Applicable to 2th Generation Glass Substrates Uniform Processing for Ultra Large Substrates Contamination-free Ion Source Reactive & Inert gas Operation Low & Easy Maintenance

38 Linear Ion Source-2 Base System Features Ion Source Type Beam Aperture Beam Energy Using Gas Cooling Type Plasma Chamber Plasma source Grid Configuration Beam Neutralization Mounting Configuration RF Ion Source 60X2010mm 100~1500eV Reactive & Inert gas Water cooling Quartz ICP Mo multi grids Plasma Bridge Neutralizer, RF Neutralizer on request Rectangular O-ring type flange INFO-RF-60X2010G Features Applicable to 7th Generation Glass Substrates Uniform Processing for Ultra Large Substrates Contamination-free Ion Source Reactive & Inert gas Operation Low & Easy Maintenance

39 Gate Valve for PDP

40 Round Gate Valve

41 Ion Energy Analyzer-1 Features Analysis of electron and ion energy distribution functions Minimum perturbation of ion flight path and constant ion transmission at all energies Using the magnet to reduce secondary electron emission Using three grids to retard scattered electrons and prevent contamination Possible to use as a Faraday Cup for charged particle flux measurement System Features Input Power Max V Aperture Size 20mm dia. Shield Size 58mm dia. Operating Temp. Max. 300 Pressure Range 5 x 10-3 ~ 5 x 10-8 Torr

42 Ion Energy Analyzer-2 Features Versatile transfer lens system Compact design Magnetic shielded construction True multi-technique capabilities Windows based Advantage data system System Features Input Power 1000 V/1A -500 V/1A Plasma chamber Quartz Grid configuration Mo Grid Operating Temp. Max. 300 Pressure Range 5 x 10-3 ~ 5 x 10-8 Torr

43 MOMBE Effusion Cell Features Versatile and compact design to use metal organic source Operating temperature range is 30 C ~ 500 C Provides easy access to injector for cleaning Easy to install due to CF flange type mounting Quick connector type power and thermocouple terminals A variety of different crucible materials are available Application paper: - M.S. Yun, M.S. Kim, Y.D. Go, J.H. Hong, I.G. Yun, Microelectronic Engineering, 77 (2005), P.54 - M.S. Kim, J.H. Hong, M.C. Jeong, J.M. Myoung, Applied Surface Science, 227 (2004), P.398 System Features Total height 440mm Injection part height 88.5mm Injection part diameter 48mm Nozzle Size 0.5~3mm Temperature range 30 C ~ 500 C Thermocouple K-Type

44 OLED Effusion Cell Features Versatile and compact design for use of low temperature volatile organics Operate at low temperatures through superior thermal control in 30 C ~ 700 C range Provides easy access to crucible for cleaning Easy to installation Base mounted power and thermocouple terminals Distribute coatings evenly by directing vapor Ideal for use in tandem for co-deposition of dye-doped organic emissive films Various material of crucibles System Features Total height 70mm Injection part diameter 50mm Standard crucible 4cc high purity alumina Temperature range 30 C ~ 700 C Charge capacity 3cc Thermocouple K-Type

45 MOCVD Shower Head Base System Features Source Type Showerhead Input Gas Stream Up to 3 layers Substrate holder 2" size/3 stage (option) Substrate Heating Capacity Up to 1200 (Uniformity ±5 ) Substrate Motion Z-motion, Revolution, Rotation (Option) Using gas N2, O2, H2, NH3, SiH24 Mo Source 2 channels (Ga, Mn) Ultimate pressure 5 x 10-3 Torr Operating System PLC program control with Touch screen Fully Automated System Safety Interlock System Features Plurality of gases in showerhead are not mixed before injection Uniform gas distribution Anti-oxidant and stable showerhead structure in high temperature Unique honeycomb structure Each component of showerhead is brazed in vacuum condition

46 Magnet Transfer Rod System Features Material Flange and tube: SUS 304 Actuator housing and stop clamps: Anodized aluminum Magnet Type NdFeB or Alnico(for high temp.) Pressure range ATM to 1 x Torr (HV/UHV) Operating Temperature -20 to 250 Decoupling Axial load 0.8 kg Torque 5.2 kg.m Lateral load 12 kg Max. Dimension 78ø x (670mm or longer) *Modifications are available Features Continuous rotary motion when unguided Long stroke (up to 2000mm) Manual or Motorized linear travel actuator Greatly enhanced durability and stability by using space sustaining transport unit Low vibration and deflection of sample holder

47 OLED Glass Chucking Module Mask Change

48 OLED Glass Chucking Module Overview Main Plate Stretching Bracket Cylinder for Glass Stretching Glass (730x920) Cylinder for Mask Chucking Glass Holder Mask Holder Mask Cylinder for Glass Chucking

49 In-line IBD System Ion Source Moving Ion Beam Target Ion Beam Target Ion Beam1 Ion Beam 2 (Deposition) (Cleaning) Target

50 Thank you for your attention