High Resolution Thin Epoxy Negative Photoresist ( µm Film Thickness) Contact aligner exposure (120 mj/cm2, 90 C/2 min PEB) DESCRIPTION

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1 High Resolution Thin Epoxy Negative Photoresist (.5 µm Film Thickness) Contact aligner exposure ( mj/cm, 9 C/ min PEB) DESCRIPTION is a high-contrast, chemically amplified, negative tone epoxy based resist that is sensitive to broadband UV radiations (i-, h- and g-line) and is recommended wherever high resolution, photoimageable, thin, permanent structures are required. is available in five standard viscosities to achieve low defect coatings with film thicknesses ranging from ~.4 to 6 µm in a single coat process. FEATURES Photoimageable thin films with high resolution i-line patterning capability (sub-.5 µm lines/ spaces at.5 µm film thickness on silicon with an i-line stepper; and µm lines/spaces at.5 µm film thickness on silicon with a broadband contact aligner) Broadband, i-line, g-line and h-line sensitivity Low temperature cure (< 5 C) Highly uniform coatings and good adhesion to rigid and flexible substrates Outstanding thermal and chemical resistance µm (top) and µm (bottom) L/S in.5 µm thick coating I-line stepper exposure (35 mj/cm, ºC/ min PEB) 373 nm isolated line (top) and µm trenches (bottom) in.5 µm thick coating

2 PROCESSING GUIDELINES The following conditions represent MicroChem s recommendation for a baseline process. It is expected that a certain amount of optimization will be required for customer-specific systems, facilities and application. For guidance on optimizing the process for a specific application, please contact your local MicroChem Technical Sales Representative or MicroChem Technical Support. Contact aligner exposure 5 µm L/S in 3 µm thick coating Substrate Preparation To obtain maximum process reliability, substrates should be clean and dry prior to applying resist. For best results, substrates should be cleaned with a piranha wet etch (using HSO4 & HO) followed by a de-ionized water rinse. Substrates may also be cleaned using reactive-ion etching (RIE) or any barrel asher supplied with oxygen. Recommended Program () Dispense ml of resist for each inch (5 mm) of substrate diameter. () Spin at 5 rpm for 5- seconds with acceleration of 5 rpm/second. (3) Spin at -3 rpm for 3 seconds with acceleration of 5 rpm/second. Coat.4 Edge Bead Removal SU-8 TF 6. Film Thickness (um) resists are available in five standard viscosities, as shown in Table. The film thickness vs. spin speed curves are displayed in Figure.a and.b. The curves were generated using a Brewer Science, Model # Cee coater, static dispense on 6 inch (5 mm) silicon wafers and a soft bake of C (times listed in Table ) on a level hot plate. Please note that the exact thickness obtained may be slightly offset from Figure due to equipment type, coat program and environmental conditions Spin Speed (rpm) Figure.a..5 and 6 Thickness vs. Spin Speed Viscosity (cst) Density (g/ml) Table. Viscosity 8 SU-8 TF 6 6 Film Thickness (um) SU-8 TF 65 4 SU-8 TF Spin Speed (rpm) Figure.b. SU-8 TF 6, 65 and 6 Thickness vs. Spin Speed

3 k Extinction Coefficient (k) n.8 Index of Refraction (n) An edge bead may form on the outer edge of the wafer during the spin-coating process. When exposing using a mask aligner, the edge bead prevents close contact of the photomask with the wafers resulting in poor aspect ratio and resolution. In order to achieve the best lithographic results, this edge bead should be removed. This can be accomplished by using a small stream of MicroChem s EBR PG at the edge of the wafer at the top and from the bottom. For edge bead removal using EBG PG, please refer to the EBR PG technical data sheet Wavelength (nm) Soft Bake Figure. Cauchy Coefficients A level hot plate with good thermal control and uniformity was used for the Soft Bake step of the process. Convection ovens may also be used. Table shows the recommended Soft Bake temperatures and times for the various products at selected film thicknesses. SOFT BAKE TIMES C Exposure resist series is compatible with i-, g- and h-line or broadband exposure tools. Table 3 gives the recommended baseline exposure dose to produce µm lines and spaces on silicon, glass (soda lime) and copper at various resist thicknesses obtained in contact mode using an EVG 6 mask aligner with a 5 watt mercury short arc lamp and PL-36LP long pass filter ( The exposure dose is dependent on the spectral output and measured wavelength, and should be adjusted accordingly. The use of a long pass filter to obtain vertical sidewalls in.5- µm thick films during broad band exposure is not mandatory, as T-topping is not observed for developed resist profiles in that thickness range. Without a long pass filter, the optimal exposure dose is expected to be lower than listed in Table 3. Table. Soft Bake Times (hot plate) Optical Parameters The dispersion curve and Cauchy coefficients are shown in Figure. This information is useful for film thickness measurements based on ellipsometry and other optical measurements. EXPOSURE ENERGY EXPOSURE ENERGY on Si on Glass and Cu mj/cm Relative to Si Table 3. Exposure Dose 3

4 Post Exposure Bake (PEB) Hard Bake A post exposure bake (PEB) is required to complete the curing reaction and should take place directly after exposure. has good mechanical properties. However, for applications where the imaged resist is to be a permanent part of the final device, the resist may be ramp/step hard baked between 5 C- C on a hot plate or in a convection oven to further cross-link the material. Bake times vary based on the type of bake process and the resist thickness. PEB TIMES ºC.5- OPTICAL PROPERTIES Table 4. PEB Times Development DEVELOPMENT TIME minutes Transmission (%T) series resists have been optimized for development in solvent-based SU-8 Developer. They can be developed in a variety of develop modes including immersion, spray, puddle or spray/puddle. 9 After Soft Bake 85 After Exposure After Hard Bake (75C, 6min) Table 5. Development Times for SU-8 Developer Rinse and Dry Wavelength (nm) When using SU-8 Developer, spray rinse the developed image with fresh developer for the approximate times listed in Table 6. Dry with filtered, pressurized air or nitrogen. Process conditions ( µm film): Soft Bake: minutes at C Exposure: 6 mj/cm Hard Bake: 6 minutes at 75 C Figure 3. Optical Transmission RINSE TIME seconds Table 6. Rinse Times with SU-8 Developer PHYSICAL PROPERTIES (Typical values) Shear Adhesion on Si/Copper/Glass (Soda lime) (MPa) µm thick films, 5 C/6 minutes Hard Bake 58/5/48 Other film mechanical properties will be similar to SU-8 film properties. Please refer to the SU-8 processing guidelines for details. 4

5 STORAGE DISCLAIMER Store resists upright and in tightly closed containers in a cool, dry environment, away from direct sunlight at a temperature of 4-7 F (4- C). Store away from light, acids, heat and sources of ignition. Shelf life is twelve months from date of manufacture. Notwithstanding anything to the contrary contained in any sales documentation, e. g., purchase order forms, all sales are made on the following conditions: All information contained in any MicroChem product literature reflects MicroChem s current knowledge on the subject and is, we believe, reliable. It is offered solely to provide possible suggestions for a customer s own experiments and is not a substitute for any testing by a customer to determine the suitability of any of MicroChem products for any particular purpose. This information may be subject to revision as new knowledge and experience becomes available, but MicroChem assumes no obligation to update or revise any data previously furnished to a customer; and if currency of data becomes an issue, customer should contact MicroChem requesting updates. Since MicroChem cannot anticipate all variations in actual end uses or in actual end-use conditions, it makes no claims, representations or guaranties, expressed or implied including, without limitation any warranty of merchantability or fitness for a particular purpose; and customer waives all of the same. MicroChem expressly disclaims any responsibility or liability in connection of any use of this information including, without limitation, any use, handling, storage or possession of any MicroChem products, or the application of any process described herein or the results desired or anything relating to the design of the customer s product. Nothing in this publication is to be considered as a license to operate under or a recommendation to infringe any patent right. DISPOSAL resists may be included with other waste containing similar organic solvents to be discarded for destruction or reclaim, in accordance with local state and federal regulations. It is the responsibility of the customer to ensure the disposal of resists and residues is made in observance of all federal, state, and local environmental regulations. ENVIRONMENTAL, HEALTH AND SAFETY Consult with the product SDS before working with resists. Handle with care. Wear chemical goggles, chemical gloves and suitable protective clothing when handling resists. Do not get into eyes, or onto skin or clothing. Use with adequate ventilation to avoid breathing vapors or mist. In case of contact with skin, wash affected area with soap and water. In case of contact with eyes, rinse immediately with water and flush for 5 minutes lifting eyelids frequently. Get emergency medical assistance. The information is based on our knowledge and we believe it to be reliable, but it may not be complete. We make no guarantee or warranty, expressed or implied, regarding the information, use, handling, storage, or possession of these products, or the application of any process described herein or the results desired, since the conditions of use and handling of these products are beyond our control. 5

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