Si DRIE APPLICATION In Corial 210IL

Transcription

1 Si DRIE APPLICATION In Corial 210IL

2 CORIAL 210IL ICP-RIE equipment for deep Si etching applications Enlarged functionality with capability to deep etch silicon, silicon carbide, glass, sapphire, and quartz Support time-multiplexed processes (Bosch) in conventional dry etch reactor Smaller wafer pieces up to full 200 mm wafer Corial 210IL DRIE Applications 2

3 PERFORMANCES SI DRIE PROCESS ON CORIAL 210IL

4 SI DRIE ON CORIAL 210IL CORIAL Bosch-like process has 3 steps step 1 - Polymer deposition by C4F8 plasma step 2 - Polymer etching by SF6 plasma step 3 - Silicon etching with 20W of RF power, which was used to increase the silicon etching rate To alternate between each step, COSMA pulse software is required for pulsing consecutively C4F8 gas flow, SF6 gas flow, LF and RF power Corial 210IL DRIE Applications 4

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6 COSMA PULSE DESCRIPTION Advanced Process Control EASY RECIPE PROGRAMATION ALL PARAMETERS CAN BE CONTROLLED AND PULSED 10 ms DATA AQUISITION +/-0,1% ACCURACY ON BIAS FINE TUNING Corial 210IL DRIE Applications 6

7 DRIE OF SILICON Precise control of the etch profile, fast etch rates, and excellent etch uniformity Corial 210IL DRIE Applications 7

8 DRIE OF SILICON Various Aspect Ratios Feature size (µm) Etched depth (µm) Aspect ratio Etch rate (µm/min) Mask Selectivity (vs. mask) Ø250 Through wafer 1:2 > 3.0 SiO2 330 Ø :5 > 2.9 PR 85 Ø :14 > 1.5 SiO2 155 Ø :35 > 1.0 SiO2 100 Results obtained with 100 mm wafer, 20% Si open area Corial 210IL DRIE Applications 8

9 SYSTEM DESCRIPTION CORIAL 210IL

10 SYSTEM DESCRIPTION General View 30 % SMALLER FOOTPRINT ICP source THE MOST COMPACT MACHINE ON THE MARKET Corial 210IL DRIE Applications 10

11 SYSTEM DESCRIPTION Detailed View EPD with laser ICP reactor Load lock Pumping system (TMP 1600l/s and dry pump 110 m 3 /h) Chiller / Heater ICP generator (2 KW ICP source) RF generator (1 KW RF biasing) Process controller HV and LV power supplies Corial 210IL DRIE Applications 11

12 SYSTEM MODULARITY Detailed View Substrate handling Protective liner RF Power Pumping system ICP Power End Point Detection Reactor design Process control software Corial 210IL DRIE Applications 12

13 SUBSTRATE HANDLING Loading 1 2 Shuttles for single and multi wafer loading Quick adaptation to sample shape and size Optimum process conditions with NO modification of process chamber Single wafer loading Operating range from -80 C to +350 C Easy adaptation from 4" to 8 substrate handling Guaranteed no wafer damage due to SOFT wafer clamping Corial 210IL DRIE Applications 13

14 ICP SOURCE CORIAL 210IL

15 REMOTE PLASMA CONFIGURATION BRACE FOR REMOTE ICP PLASMA PROCESSING 20 min Reactor dismounting & brace installation 4 min Pumping down to 10-4 Tor 1 min Reactor Venting 5 min Plasma cleaning FAST BRACE installation Corial 210IL DRIE Applications 15

16 REMOTE PLASMA CONFIGURATION ZERO CROSS CONTAMINATION THE LINER FOR HARSH ICP-RIE PROCESSES 5 min Liner replacement 1 min Reactor Venting 4 min Pumping down to 10-4 Tor 5 min Plasma cleaning EASY LINER replacement by a single person Corial 210IL DRIE Applications 16

17 ADVANTAGES FAST AND UNIFORM ETCHING 1. High power (2 KW) ICP source producing uniform high density plasma, 2. High power (1 KW) RF source to ensure high silicon etch rates, 3. ICP source with the hot quartz liner allowing to diminish loss of reactive species, 4. Very high conductance pumping system for operation at high gas flow rates, 5. Helium pressure to ensure the thermal transfer between the cathode, the substrate holder and the substrates, 6. Aluminum brace between ICP source and vacuum vessel to balance the ion and reactive species fluxes in order to enable Bosch-like processes, 7. COSMA Pulse software enabling time-multiplexed processing, 8. Capability to process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials after quick hardware conversion. Corial 210IL DRIE Applications 17

18 USABILITY CORIAL 210IL

19 PROCESS CONTROL SOFTWARE COSMA COSMA CORIAL OPERATING SYSTEM FOR MACHINE The simplest, most efficient software to develop processes, operate, and maintain CORIAL systems DESKTOP APPLICATION Process Editing I Process Adjustment I Process Operation I Process Tracability I System Maintenance REMOTE CONTROL MOBILE APPLICATION Module & Process Follow-Up I Alarms & Warnings Connected Users NEW 2018 Corial 210IL DRIE Applications 19

20 REPROCESSING SOFTWARE COSMA RS DISPLAY UP TO 4 PARAMETERS FROM A RUN Simple and efficient software to analyze process runs and accelerate process development REMOTE ANALYSIS OF RUNS DRAG AND DROP CURVES TO CHECK PROCESS REPEATABILITY Corial 210IL DRIE Applications 20

21 END POINT DETECTION EPD with laser A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the wafer surface and the laser beam impact on it. A 20 µm diameter laser spot facilitates the record of interference signals. Real-Time etch rate measurement Real-Time etched depth measurement Corial 210IL DRIE Applications 21

22 CORIAL 210IL ICP-RIE equipment for deep Si etching applications Enlarged functionality with capability to deep etch silicon, silicon carbide, glass, sapphire, and quartz Support time-multiplexed processes (Bosch) in conventional dry etch reactor Smaller wafer pieces up to full 200 mm wafer Corial 210IL DRIE Applications 22