Encapsulation Materials Technology For SiP in Automotive

Transcription

1 Encapsulation Materials Technology For SiP in Automotive Oct Panasonic Corporation Electronic Materials Business Division

2 Our Business Fields Electronic Instruments Networking equipment Smart phone PC Digital appliances Automotive Circuit Board Materials Circuit Boards Devices and Components Circuit Boards Semiconductors Automotive parts and others Electronic Materials Circuit Board Materials Semiconductor Encapsulation Materials Plastic Molding Compound Advanced Films Semiconductors Encapsulation Materials Module Components Advanced Films Automotive Components Molding Compound Raw Materials Glass cloth Resin Copper foil Silica 2 Panasonic Corporation Electronic Materials Business Division

3 Contents 1. Encapsulation Material Technology for SiP 2. Encapsulation Material Technology for WLP/PLP 3. Technical Concerns for Automotive application and our proposal 3 Panasonic Corporation Electronic Materials Business Division

4 1. Encapsulation Material Technology for SiP 2. Encapsulation Material Technology for WLP/PLP 3. Technical Concerns for Automotive application and our proposal 4 Panasonic Corporation Electronic Materials Business Division

5 PKG road map ~ Market Trend 3G 4G Pre 5G 5G mm Wave Technology 6GHz< Super high frequencies Compatible for IoT Device Key word small modularization Low loss Low electric power High integration of parts Super Small & Thin Low loss & high cost performance FC CSP + discrete Double-sided FC substrate SiP Packaging Trend FO-3D SiP FC SiP Embedded SiP Advanced SiP Coming Soon! 5 Panasonic Corporation Electronic Materials Business Division

6 SiP Typical Technical Requirement Warpage control Low PKG concealment at Narrow gap Damage by laser marking Narrow gap transparent Substrate: Thin or Less Chip & Parts: many & high integration Small warpage in various PKG Warpage control Tech um High shading function Shallow laser marking Transmission loss of antenna Communication system: High frequency Wide frequency band Transmission loss trends to increase Low Dk/Df Technology Unfilled trouble issue at various place *Solder extrusion after reflow *Unfilled under parts Solder 20-50um High Filling ability Technology *Unfilled under FC Various components compatibility *Adhesion to EMI shield and stable metal *Adhesion to Inductor *Protect Saw filter Low pressure molding *Protect Image sensor Low temp. molding High reliability performance Technology 6 Panasonic Corporation Electronic Materials Business Division

7 SiP typical failure mode Requirement Technology Warpage control Low PKG concealment at Narrow gap Damage by laser marking Narrow gap transparent Substrate: Thin or Less Chip & Parts: many & high integration Small warpage in various PKG Warpage control Tech um High shading function Shallow laser marking Transmission loss of antenna Communication system: High frequency Wide frequency band Transmission loss trends to increase Low Dk/Df Technology Unfilled trouble issue at various place *Solder extrusion after reflow *Unfilled under parts Solder 20-50um High Filling ability Technology *Unfilled under FC Various components compatibility *Adhesion to EMI shield and stable metal *Adhesion to Inductor *Protect Saw filter Low pressure molding *Protect Image sensor Low temp. molding High reliability performance Technology 7 Panasonic Corporation Electronic Materials Business Division

8 Warpage control solution Generation Current Next generation PKG structure Chip & components volume: Low EMC volume: High Chip & components volume: High EMC volume: Low Heat shrinkage force Molding area > substrate Molding area < substrate Trend of Warpage Behavior RT HT concave convex convex concave EMC property direction Lower CTE Lower Modulus at HT Higher CTE Higher Modulus at HT 8 Panasonic Corporation Electronic Materials Business Division

9 Warpage measurement evaluation for Next generation PKG Flexural modulus 25 o C GPa Ref. Run 1 Run 2 Run 3 Run 4 High shrink. Medium Shrink. High Tg Medium shrink. High Tg High shrink. & CTE Low modulus High shrink. High CTE & Med modulus o C C.T.E. 1 ppm/c C.T.E. 2 ppm/c Mold Shrinkage PMC Reduction rate of STRIP Warpage (BA) % Ref % Reduction 9 Panasonic Corporation Electronic Materials Business Division

10 Warpage measurement evaluation for Next generation PKG 0.8 Run 1 Run 2 HT Modulus (GPa) UNIT concave warpage decreased Control STRIP concave warpage decreased Effective for balancing STRIP and UNIT warpage Run 4 Run CTE 2 (ppm) 10 Panasonic Corporation Electronic Materials Business Division

11 Warpage control Technology (1) control of small shrinkage Purpose : Adjustment of RT warpage, Control of Mold shrinkage (keep Tg, CTE & Modulus) HSA SSA Expansion PSA generates a volatile matter, spreads the molecular chain during curing, Chemical shrinkage CTE2 Volatile vaporize Expansion NSA restrains the contraction of the molecular chain. Mold Shrinkage Restricting resin structure CTE1 Mold Shrinkage RT EMC Tg M d temp RT EMC Tg M d temp Increase of chemical shrinkage Decrease of chemical shrinkage Target Prescription The expected change Increase of Mold Shrinkage Decrease of Mold Shrinkage to use High shrinkage additive (=HSA) to use Small Shrinkage Additive (=SSA) Increase of Mold shrinkage (increase of chemical shrinkage) Keep Tg Modulus CTE Decrease of Mold shrinkage (decrease of chemical shrinkage) Keep Tg Modulus CTE 11 Panasonic Corporation Electronic Materials Business Division

12 Warpage control Technology (1) control of small shrinkage Property data Shrinkage additive +1.0 (SSA) +0.5 (SSA) Org (Ref) +0.5 (HSA) +1.0 (HSA) CTE1 ppm / o C CTE2 ppm / o C Tg o C Flexural modulus (RT) GPa Mold shrinkage % TSM results convex SSA Org PKG structure concave HSA PKG size : 15X15 Die size : 12X7 Side by side structure Mold thickness : 0.23mmt Die thickness : 0.07mmt Substrate thickness : 0.09mmt We can adjust RT warpage with same warpage behavior. 12 Panasonic Corporation Electronic Materials Business Division

13 SiP typical failure mode Requirement Technology Warpage control Low PKG concealment at Narrow gap Damage by laser marking Narrow gap transparent Substrate: Thin or Less Chip & Parts: many & high integration Small warpage in various PKG Warpage control Tech um High shading function Shallow laser marking Transmission loss of antenna Communication system: High frequency Wide frequency band Transmission loss trends to increase Low Dk/Df Technology Unfilled trouble issue at various place *Solder extrusion after reflow *Unfilled under parts Solder 20-50um High Filling ability Technology *Unfilled under FC Various components compatibility *Adhesion to EMI shield and stable metal *Adhesion to Inductor *Protect Saw filter Low pressure molding *Protect Image sensor Low temp. molding High reliability performance Technology 13 Panasonic Corporation Electronic Materials Business Division

14 About Df, Dk About Df, Dk Df (Dissipation factor) Energy loss at polarization reversal when AC voltage is applied. Polarization of molecule, ionic material Polarization reversal Electrical charge changes by AC(Alternating current) Dk(Dielectric constant) Degree of polarization EMC Transmission loss α= K f Dk Df f : frequency In case of high frequency, transmission loss seems to be increased. For communication with high frequency(high speed), it will be needed to achieve low Dk/Df. Low Df, Dk Low Df : Small energy loss at polarization reversal Low Dk : Small amount of polarization Small energy loss Polarization reversal Df also becomes smaller 14 Panasonic Corporation Electronic Materials Business Division

15 Low Df direction Mechanism Direction and mechanism Direction Mechanism Side Effect High filler content Df Dk Silica (3GHz) 3.8 (1GHz) Resin (1GHz) 3~5 (1GHz) Silica has very small Df compared to resin. Less flowability Increase Dk Rigid structure Normal cure amorphous Available resin is limited. Dk is not so low. Low Df resin Monomer Rigid structure (Prevent moving with AC voltage) molecule movement is limited Low Dk resin Low Dk resin has low Df Normal monomer Less polar monomer(raw resin) (small amount reactive group) Normally less polar resin has low Tg. -> Mold shrinkage increase Viscosity increases High Tg with less polar is difficult. Additive Decrease or eliminate additive which has large polar. Affects reliability Affects moldability 15 Panasonic Corporation Electronic Materials Business Division

16 New low Df resin development Purpose : Control of Dk/Df by new resin <New resin concept> New X New X is the special structure due to low Df Curing + Epoxy Unit Current EMC New EMC Feature Low Df Under dev. Dk (@10GHz) method B Df (@10GHz) method B Dk (@60GHz) method C Df (@60GHz) method C *method B : Cavity resonance method **method C : Free space method New reacted structure for low Df 16 Panasonic Corporation Electronic Materials Business Division

17 SiP typical failure mode Requirement Technology Warpage control Low PKG concealment at Narrow gap Damage by laser marking Narrow gap transparent Substrate: Thin or Less Chip & Parts: many & high integration Small warpage in various PKG Warpage control Tech um High shading function Shallow laser marking Transmission loss of antenna Communication system: High frequency Wide frequency band Transmission loss trends to increase Low Dk/Df Technology Unfilled trouble issue at various place *Solder extrusion after reflow *Unfilled under parts Solder 20-50um High Filling ability Technology *Unfilled under FC Various components compatibility *Adhesion to EMI shield and stable metal *Adhesion to Inductor *Protect Saw filter Low pressure molding *Protect Image sensor Low temp. molding High reliability performance Technology 17 Panasonic Corporation Electronic Materials Business Division

18 Filling ability evaluation of EMC with fine cut filler Background : Mounted components increases, minimum mold gap trend to narrow. High integration design SiP Mounted components on PKG increase. The distance between the components will be close. The mold gap will be very narrow. Method for good filing ability and side effect of property, defect for SiP Property direction Method Side effect (property, cost) Viscosity flowability cost Defect Latent Curing Long GT - Increased - Releasability New latent catalyst Lower Increased - Nothing Fine filler 10 um cut Increased Decreased up Limited formulation Latent catalyst and fine filler as solutions to good filling properties. 18 Panasonic Corporation Electronic Materials Business Division

19 Design of latent catalyst Purpose : Improve filling performance by latent catalyst (Resin curing reaction control) X : Normal type Onium ion Counter anion Hydrogen bond or Intermolecular force active point Melting activate Back Ground Latent catalysts have been known as good fill ability. But due to the problem of the melting temperature of the current latent catalyst, sometimes cause problem of curing. In order to solve the problem, we are considering improvement of catalyst. Y : Current Latent type (high crystalline) C O C Curing reaction Highly crystalline catalyst sometimes causes curing troubles by insufficient of melting. Z : New Latent type (Low melting point) Melting activate Low Controller Temperature High Cured resin Controlling the activation temperature of catalyst by the chemical structure 19 Panasonic Corporation Electronic Materials Business Division

20 Filling ability evaluation of EMC with latent catalyst EMC properties with latent catalyst Viscosity data EMC unit D1 D2 Catalyst - X Y Silica size max/av. 10 / / 3.2 Spiral flow cm Gelation time s Tg C Filling ability (80um pitch bump / 20~25um gap) D1 D2 SAT Plane polish SAT Plane polish New latent catalyst shows good filling ability no unfill 20 Panasonic Corporation Electronic Materials Business Division

21 SiP typical failure mode Requirement Technology Warpage control Low PKG concealment at Narrow gap Damage by laser marking Narrow gap transparent Substrate: Thin or Less Chip & Parts: many & high integration Small warpage in various PKG Warpage control Tech um High shading function Shallow laser marking Transmission loss of antenna Communication system: High frequency Wide frequency band Transmission loss trends to increase Low Dk/Df Technology Unfilled trouble issue at various place *Solder extrusion after reflow *Unfilled under parts Solder 20-50um High Filling ability Technology *Unfilled under FC Various components compatibility *Adhesion to EMI shield and stable metal *Adhesion to Inductor *Protect Saw filter Low pressure molding *Protect Image sensor Low temp. molding High reliability performance Technology 21 Panasonic Corporation Electronic Materials Business Division

22 Low PKG concealment at Narrow gap Background : Mold gap is narrow, chip and parts are easy to be transparent and damaged. Damage by laser marking Narrow gap transparent 50-90um Method for High concealment ability and Laser making (LM) ability for SiP Property direction Method Die mark Laser marking ability visibility Shallow marking Defect Carbon black quantity up Improved No effect Deterioration Electric performance Is deteriorated. High concealment New colorant Improved Improved Improved Nothing filler size down Improved No effect No effect Nothing 22 Panasonic Corporation Electronic Materials Business Division

23 Narrow gap transparent solution Purpose : Improve High concealment and Laser marking ability by new color and filler High concealment mechanism Current formulation design New colorant concept Current colorant Fused silica is transparent light EMC Blackness is insufficient Carbon black high colorant performance conductive material Good laser mark ability New formulation design direction New colorant Filler optimization fine filler has many interface, so visible light can t pass throw colorant quantity up EMC Blackness up, so visible light can t pass throw Laser marking New colorant material high colorant performance non conductive material Good laser mark-ability 23 Panasonic Corporation Electronic Materials Business Division

24 Development of high concealment EMC Examination of transparent Light transmittance Test piece thickness: 60um Measurement: Spectrophotometer (SHIMADZU MPC-3100) Observation wavelength: 560nm-610nm Examination of Laser Marking ability Laser making condition Laser type : YAG laser Wavelength: 1064 nm, Frequency: 10 Hz Laser output: 14A, 800 mm/s Image recognition: Luminance mode, Lv.15, ( Keyence VHX-6000) Light Detector Visibility after laser marking Microscope picture (x50) Luminance mode (Lv.15) 60um Die mark transparent Image processing Test piece data Mold thickness: 0.54 mm Mold size: 60.0 x 220mm Substrate thickness: 0.32mm Depth of laser marking fully recognized area: 2.33 mm 2 Visual Judgement Transparent or not molding Mold gap 60 um substrate 24 Panasonic Corporation Electronic Materials Business Division

25 Development of high concealment EMC EMC Run 1 Run 2 Run 3 Reference Target Fine cut filler New color Carbon black up - Cut point colorant Carbon black (%) x x 2x x New Pigment (%) - Y - - Die mark transparent Picture visibility Luminance 58 % 71 % 45 % 58 % Marking depth (um) New colorant system show high concealment performance 25 Panasonic Corporation Electronic Materials Business Division

26 SiP typical failure mode Requirement Technology Warpage control Low PKG concealment at Narrow gap Damage by laser marking Narrow gap transparent Substrate: Thin or Less Chip & Parts: many & high integration Small warpage in various PKG Warpage control Tech um High shading function Shallow laser marking Transmission loss of antenna Communication system: High frequency Wide frequency band Transmission loss trends to increase Low Dk/Df Technology Unfilled trouble issue at various place *Solder extrusion after reflow *Unfilled under parts Solder 20-50um High Filling ability Technology *Unfilled under FC Various components compatibility *Adhesion to EMI shield and stable metal *Adhesion to Inductor *Protect Saw filter Low pressure molding *Protect Image sensor Low temp. molding High reliability performance Technology 26 Panasonic Corporation Electronic Materials Business Division

27 Low temperature molding EMC for component protect Background : Various components are mounted, especially Image sensor is weak thermal Direction for low mold temp. & Low PMC temp. Property comparison Use low viscosity with high reactive resin. Optimize amount of catalyst 50 Cure curve at 130 o C Unit Molding temperature 170 o C 130 o C Spiral flow cm Gel time Sec Viscosity Pa*s CTE1/2 ppm/ C 13/47 13/47 Tg C Flexural Strength MPa Flexural Modulus GPa Torque ( Kgf cm) Mold Shrinkage AM % PMC % PMC condition is 170 o C, 6h or 130 o C, 12h Low temp molding should be good for warpage reduction. To maintain good filling ability is big challenge 27 Panasonic Corporation Electronic Materials Business Division

28 1. Encapsulation Material Technology for SiP 2. Encapsulation Material Technology for WLP/PLP 3. Technical Concerns for Automotive application and our proposal 28 Panasonic Corporation Electronic Materials Business Division

29 Image of size applicable range depending on material form Mold Thickness 1000um 500um 300um Tablet Process : Transfer Granule Process : Compression 150um Liquid Process : Compression Sheet Process : Compression Laminate 8inch WLP 12inch WLP 300mm Panel 18inch WLP 450mm Panel >600mm Panel Mold Area 29 Panasonic Corporation Electronic Materials Business Division

30 Material Form and process, target PKG Tablet Liquid Granule Sheet Material form Transfer molding Compression molding (Face up/down) Vacuum lamination Process Features Grind less(free) Low material cost MP experience Excellent flow-ability Low mold shrinkage Good process ability (High Tg, Chem. resistance) Short dispense time Thinness Low process cost (lamination) Target PKG form Low density WLP High density WLP (2.5D, 3D, ) WLP with under fill Middle density WLP Large size PLP Larger size PLP Thin PLP 30 Panasonic Corporation Electronic Materials Business Division

31 Typical process of FOWLP/PLP Die-first Die-last Two-side RDL 1) Tape lamination on carrier 1) Tape lamination on carrier 1) 1 st RDL 2) Die mount 2) RDL 2) Die-mount 3) Molding Low warpage 3) Die mount (FC bonding) Low warpage 3) Molding Filling ability to narrow gap 4) De-bonding Releasability Filling ability to narrow gap 4) Molding Low warpage Flowability curability 4) Grinding 5) RDL 5) De-bonding Flowability curability 5) 2 nd RDL~De-bonding Coatability Coatability Chemical resistance 31 Panasonic Corporation Electronic Materials Business Division

32 Warpage control Technology Purpose : Reducing stress index for Warpage control with Low CTE substrate Relationship between each parameter and warpage Test condition 12 Dummy wafer : 775um Mold thickness : 500um Mold Machine : CPM-1080(TOWA) Warpage(mm) vs Shrinkage vs Modulus vs CTE M'd shrinkage(%) Modulus(GPa) CTE(ppm/degC) vs Stress index Stress index The low stress material tends to have good warpage 32 Panasonic Corporation Electronic Materials Business Division

33 Warpage control Technology Reducing stress index Low modulus additive Low CTE additive Low stress additive Sea-island structure Decrease Modulus Restrain molecular chain expansion Decrease CTE Relaxing intermolecular stress Decrease CTE & Modulus Modulus ( GPa ) CTE ( ppm/degc ) Blank Low Low CTE Low 8 Blank Low Low CTE Low modulus additive stress modulus additive stress additive additive additive additive These types of additive improve parameters related with stress index(cte / modulus), and reduce warpage after molded. 33 Panasonic Corporation Electronic Materials Business Division

34 1. Encapsulation Material Technology for SiP 2. Encapsulation Material Technology for WLP/PLP 3. Technical Concerns for Automotive application and our proposal 34 Panasonic Corporation Electronic Materials Business Division

35 Reliability concerns about Automotive requirement EMC Good warpage stability at High temp. Higher Tg with low modulus for BLR Heat resistance & Board level reliability PKG HTSL condition : 150 C 1000hr 175 C 1000hr TCT condition for BLR : -40/85 C 3000cyc -40/125 C 3000cyc *Warpage fluctuation *BLR concern *Note: BLR=Board Level Reliability, TCT=Temperature Cycling Test HTSL= High Temperature Storage Life PCB Board level reliability after TCT TCT condition for BLR -40/85 C 3000cyc -40 / 125 C 3000cyc Reinforcement material 2 nd Underfill (UF) Corner glue (Sidefill = SF) *Solder crack risk 35 Panasonic Corporation Electronic Materials Business Division

36 Reliability concerns about Automotive requirement EMC Good warpage stability at High temp. Higher Tg with low modulus for BLR Heat resistance & Board level reliability PKG HTSL condition : 150 C 1000hr 175 C 1000hr TCT condition for BLR : -40/85 C 3000cyc -40/125 C 3000cyc *Warpage fluctuation *BLR concern *Note: BLR=Board Level Reliability, TCT=Temperature Cycling Test HTSL= High Temperature Storage Life PCB Board level reliability after TCT TCT condition on BLR -40/85 C 3000cyc -40 / 125 C 3000cyc Reinforcement material 2 nd Underfill (UF) Corner glue (Sidefill = SF) *Solder crack risk 36 Panasonic Corporation Electronic Materials Business Division

37 Warpage stability after HTS Internal Study -Mold shrinkage trend after HTS- HTS(175 C), > 1000hr Large warpage due to higher mold shrinkage EMC unit A B C CTE1/2 s 11/40 15/41 9/36 Tg C Mold shrinkage % Unit warpage might be changed on severe HTS condition. Optimized EMC will be required. 37 Panasonic Corporation Electronic Materials Business Division

38 Required EMC property for BLR TCT condition for BLR : -40/85 C 3000cyc -40/125 C 3000cyc CTE mismatch make BLR concerns Mother board Higher CTE with good warpage performance Reduce stress at TCT. Mother board High Tg and Low modulus Show good reliability! matching CTE with PCB Tg ( o C) Next generation SiP EMC target 110 Conventional SiP grade RT modulus 38 Panasonic Corporation Electronic Materials Business Division

39 Reliability concerns about Automotive requirement EMC Good warpage stability at High temp. Higher Tg with low modulus for BLR Heat resistance & Board level reliability PKG HTSL condition : 150 C 1000hr 175 C 1000hr TCT condition for BLR : -40/85 C 3000cyc -40/125 C 3000cyc *Warpage fluctuation *BLR concern *Note: BLR=Board Level Reliability, TCT=Temperature Cycling Test HTSL= High Temperature Storage Life PCB Board level reliability after TCT TCT condition on BLR -40/85 C 3000cyc -40 / 125 C 3000cyc Reinforcement material 2 nd Underfill (UF) Corner glue (Sidefill = SF) *Solder crack risk 39 Panasonic Corporation Electronic Materials Business Division

40 Panasonic reinforcement proposals CSP/BGA package are increasing. Chip size is getting larger. >10mm Smaller ball size <0.4mm, finer ball pitch <0.5mm Severer requirement for BLR TCT *. -40~125 x >3,000cyc 2 nd Underfill Corner glue (Side fill) *Note: BLR=Board Level Reliability, TCT=Temperature Cycling Test Solder crack risk against temperature change stress, due to large CTE differences between PCB and PKG. No Reinforcement With 2 nd Underfill Stress reduction! 40 Panasonic Corporation Electronic Materials Business Division

41 Stress Simulation Under fill/side fill can obtain 20~60% down about internal stress of solder by simulation!! 5 mm BGA(0.4mm pitch) 10 mm BGA(0.4mm pitch) ( 52%) CV ( 26%) CV ( 60%) CV ( 31%) CV mm BGA(0.8mm pitch) ( 44%) CV ( 21%) CV5788 Simulation condition Temperature condition Stress free temperature -40 C~125 C 25 C Stress value = Stress applied to outside of solder 41 Panasonic Corporation Electronic Materials Business Division

42 TCT Internal Result Stress simulation data and device TCT result were correlated. 5 mm BGA(0.4mm pitch) 10 mm BGA(0.4mm pitch) < < 2800 CV mm BGA(0.8mm pitch) CV5788 Test Condition (30min) Test Vehicle < 5000< CV5794 CV Panasonic Corporation Electronic Materials Business Division

43 Stress simulation with 25mmBGA Under fill/side fill can obtain 20~60% down about internal stress of solder by simulation!! Stress simulation data Simulation Model Outside( ) ( 63%) CV ( 34%) CV5788 PKG information Inside( ) PKG size Pin number 25mm 2025 pin ( 59%) 198 ( 21%) CV5788 Ball pitch Ball height (Gap) Ball composition 500um 300μm SnAgCu (SAC) CV5794 Simulation condition Temperature condition Stress free temperature -40 C~125 C 25 C 43 Panasonic Corporation Electronic Materials Business Division

44 Panasonic Reinforcement Line up Model CV5350 series CV5794 series CV5788 series Type Under fill Under fill Side fill Application Camera for Auto Mill wave Radar Engine ECE Antenna PKG for 5G Engine ECU Car Navigation System Feature High Tg Good Filling Fast Cure ability Low temp cure High Tg Low CTE Good Adhesion Refrigerated Storage High Tg Low CTE Shape Retention Fast cure ability Viscosity 4Pa s 45Pa s 300Pa s Storage condition -20 /4 months 5 /6months -20 /6months Cure condition 80 /3h 150 /10 分 150 /10min 150 /15min 30 70%192h 260 Reflow x3 times PASS PASS PASS -50~125 x3000cyc PASS PASS PASS Please visit our web site for further information Panasonic Corporation Electronic Materials Business Division

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