SUPPLEMENTARY INFORMATION

Transcription

1 doi: /nture10970 I. GN directly grown on the h-bn relese lyer Figure S1 shows X-ry diffrction with the 2θ/ω configurtion nd n opticl microscopy imge for the GN directly grown on the h-bn relese lyer. We supply the totl mount of trimethylgllium to grow GN film with the nominl thickness of 3 μm. X-ry diffrction from GN (101 _ 0), (0002), nd (101 _ 1) plnes ws oserved, indicting the crystl structure of the GN lyer is polycrystlline. In ddition, the GN surfce hs isolted-gn-islnd morphology, where the GN islnds cnnot colescence with ech other. Intensity (r. units) 2θ/ω scn GN (100) GN (002) θ (Degree) GN (101) Spphire (006) Figure S1, X-ry diffrction with 2θ/ω configurtion nd,, opticl microscopy imge for the GN lyer grown on the h-bn relese lyer. 1

2 RESEARCH SUPPLEMENTARY INFORMATION II. Orienttion reltionship etween GN, AlN, h-bn nd spphire sustrte The crystllogrphic in-plne orienttion reltionship etween the GN film nd spphire sustrte ws investigted using the selected-re diffrction (SAD) ptterns otined y the TEM. The ptterns for the sustrte nd the GN film re shown in Fig. S2 nd S2, respectively. The incident electron em zimuth ws prllel to [1 _ 21 _ 0] spphire in Fig. S2 nd the zimuth ws [11 _ 00] GN in Fig. S2. From the rrngement of spots from the GN nd spphire sustrte, the [112 _ 0] GN direction is prllel to [3 _ 030] spphire direction, tht is, the [112 _ 0] GN direction is rotted y 30 from the [112 _ 0] spphire direction. Figure S2 SAD ptterns of, the spphire sustrte,, the GN film. 2

3 RESEARCH Figure S3 is SAD of the h-bn/spphire interfce re. The incident electron em zimuth ws prllel to [1 _ 21 _ 0] spphire. From the rrngement of spots from the h-bn nd spphire sustrte, the orienttion reltionship etween spphire nd h-bn cn e identified s (0001) spphire (0001) h-bn nd [1 _ 21 _ 0] spphire [11 _ 00] h-bn. Figure S3 is SAD of the AlN/h-BN interfce re. The incident electron em zimuth ws prllel to [11 _ 00] AlN. From the rrngement of spots from the AlN nd the h-bn, the orienttion reltionship etween AlN nd h-bn cn e identified s (0001) AlN (0001) h-bn nd [11 _ 00] AlN [11 _ 00] h-bn. Therefore, the orienttion reltionship etween GN, AlN, h-bn, nd spphire cn e lso identified s (0001) spphire (0001) h-bn (0001) AlN (0001) GN nd [1 _ 21 _ 0] spphire [11 _ 00] h-bn [11 _ 00] AlN [11 _ 00] GN. Figure S3 SAD ptterns of, the h-bn/spphire interfce re,, the AlN/h-BN interfce re. 3

4 RESEARCH SUPPLEMENTARY INFORMATION III. Disloction distriution in the GN film From the cross-sectionl TEM imges in Fig. 2d nd 2e, we conclude tht the GN film grown on the AlN contins three types of threding disloctions: edge, screw, nd mixed. The edge nd screw disloctions hve Burgers vectors ( e = <112 _ 0> nd s = [0001], respectively). In Fig. 2d, only the screw nd mixed disloctions re visile nd only edge nd mixed disloctions re seen in Fig. 2e. We counted the numer of disloctions nd found tht the mixed disloctions re the predominnt ones in our smple ( cm -2 ). The edge nd screw disloction densities re cm -2 nd cm -2, respectively. The totl disloction density is cm -2, which is two orders of mgnitude higher thn tht in stte-of-the-rt GN-sed LEDs, which hve typicl disloction densities in the low 10 8 cm -2. IV. GN film grown on the AlGN lyer on the h-bn relese lyer Insted of the AlN on the h-bn relese lyer, we grew wurtzite AlGN lyer on the h-bn nd then grew GN film on the AlGN (Fig. S3). As seen for the GN grown on the AlN on the h-bn relese lyer, the opticl microscopy imge of the GN surfce grown on the AlGN in Fig. S3 shows flt nd colesced GN surfce nd X-ry diffrction with the 2θ/ω configurtion exhiits only GN nd AlGN (0002) diffrction peks (Fig. S3c), indicting (0001) single-crystl GN film grows on the (0001) AlGN on the h-bn lyer. The Al content in the AlGN determined y the XRD is 16 %. Hence, the AlGN with the Al content of over 10 % grown on the h-bn relese lyer llows us to grow flt single-crystl GN lyer. We performed X-ry diffrction pole figure mesurement of the GN (101 _ 1) plne. Figure S3d shows GN (101 _ 1) diffrction peks t Ψ ~ 62 with hexgonl symmetry, which is nerly equl to the ngle etween the GN (101 _ 1) nd (0001) plnes. The opticl microscopy imge, XRD, nd XRD pole figure confirm tht single-crystl wurtzite GN lso grows on the AlGN on the h-bn relese lyers. 4

5 RESEARCH c Intensity (r. units) 2θ/ω scn GN (0002) AlGN (0002) θ (degree) Spphire (0006) d Figure S4 Flt single-crystl wurtzite GN is grown on the AlGN on the h-bn relese lyer., Schemtic illustrtion,, opticl microscopy imge, c, X-ry diffrction with 2θ/ω configurtion for the GN film, d, X-ry diffrction pole figure for the GN film. 5

6 RESEARCH SUPPLEMENTARY INFORMATION V. The seprted surfces fter the relese We performed X-ry photoelectron spectroscopy (XPS) mesurement using Al Kα ( ev) s the X-ry source (em spot ~ 2 mm). The escpe depth of photoelectrons is estimted to e few nnometers. Figures S5 nd S5 show B 1s nd N 1s XP spectr, respectively, otined for the surfce of the trnsferred film nd the counter-surfce of the spphire sustrte fter the mechnicl relese. The position of the B 1s pek is sme for oth surfces. The inding energy (BE) of ev is close to the reported vlue for B-N onds in h-bn. Identicl results were otined lso in N 1s XPS: the N 1s pek position (~ ev BE) is sme for oth surfces. These results indicte tht the seprtion of the film ctully tkes plce t the h-bn relese lyer, s illustrted in Fig. 1d. The lyered h-bn, in which honeycom lyers re wekly ound to ech other vi vn der Wls forces like grphite, cts s functionl relese for the mechnicl trnsfer of the MQW film from the host spphire sustrte onto the foreigin spphire sustrtes. Intensity (r. units) B1s Host spphire fter the relese Trnsferred film Intensity (r. unis) N1s Host spphire fter the relese Trnsferred film Binding energy (ev) Binding energy (ev) Figure S5, B 1s XPS spectr for the surfce of the trnsferred MQW film nd the counter-surfce of the spphire sustrte nd,, sme for N 1s XPS spectr. 6

7 RESEARCH VI. Conventionl nd our LED structures The LED structures, consisting of 0.3-μm-thick Si-doped AlGN lyer, 3-μm-thick Si-doped GN lyer, ten-periods InGN/GN MQW structure, nd 0.1-μm-thick Mg-doped GN lyer, were grown on typicl LT-AlN uffer lyer nd on the h-bn relese lyer. The electron nd hole concentrtions in the Si-doped nd Mg-doped GN lyers were nd cm -3, respectively. For the trnsferred MQW LED, fter the stndrd friction process, we mechniclly relesed the LED structure from the spphire sustrte without ny supporting sustrte. Then, we mounted it onto the indium sheet [Fig. S6]. We fricted the conventionl MQW LED y the stndrd friction process without lift-off [Fig. S6]. For the verticl-type trnsferred MQW LED, fter the LED structure hd een relesed, the Al/Au electrodes were deposited on the ck side of the LED. Then, we mounted it onto the indium sheet [Fig. S6c]. c Figure S6 Schemtic illustrtions of, the trnsferred MQW LED,, the conventionl MQW LED without lift-off, nd c, the verticl-type trnsferred MQW LED. 7