Hydrogen in Crystalline Semiconductors r

Transcription

1 S.J. Pearton J.W Corbett M. Stavola Hydrogen in Crystalline Semiconductors r ' With 250 Figures Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Hong Kong Barcelona Budapest

2 Contents 1. Introduction 1 2. Hydrogen Incorporation in Crystalline Semiconductors Techniques for Hydrogen Incorporation in Semiconductors Hydrogen Plasma Exposure Hydrogen Implantation Survey of the Configurations of Hydrogen in Semiconductors Silicon Germanium Gallium-Arsenide and Other Compound Semiconductors Passivation of Deep Levels by Hydrogen Deep-Level Passivation in Silicon Metallic Impurities Chalcogenides Oxygen-Related Thermal Donors Process-Related Defects Crystalline Defects Thermal Stability of Passivation Prehydrogenation Models for Deep-Level Passivation Passivation of Defects in Gallium Arsenide Aluminum Gallium Arsenide Gallium Phosphide CdHgTe, Zn 3 P Germanium Shallow Impurity Passivation by Atomic Hydrogen Silicon Silicon Acceptors Donors Gallium Arsenide Donors Charge States Acceptors 93 VII

3 4.3 AlGaAs CdTe and ZnTe Gallium Phosphide Germanium Indium Phosphide BN and BP Correlation with Muonium Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy Vibrational Spectroscopy of H-Related Complexes Local Vibrational Modes H-Stretching Vibrations of the Acceptor-H Complexes Local Mode of the B-H Complex and the Effect of В Isotopic Substitutions Vibrational Spectroscopy of Donor-H Complexes in Silicon IR Studies of Lattice Defects Decorated with Hydrogen Uniaxial Stress Studies of H-Related Complexes Uniaxial Stress and Defect Symmetry Vibrational Spectra of the B-H Complex Under Stress Stress Studies of Donor-H Complexes Uniaxial Stress Studies of Proton-Implanted Silicon Hydrogen Motion in the B-H Complex Kinetics of Defect Motion IR Studies of the Reorientation of the B-H Complex Raman Studies of the Reorientation of the B-H Complex Tunneling vs Classical Hydrogen Motion Conclusion The Microscopic Characteristics of Impurity- Hydrogen Complexes in III-V Semiconductors Acceptor-H Complexes H Complexed with Acceptors on the Group-Ill Sublattice H Complexed with Acceptors on the Group-V Sublattice Donor-H Complexes GaAs:Si Ga -H GaAs:Sn Ga -H AlGaAs:Si-H 147 VIII

4 6.2.4 Donor Dependence of the Vibrational Frequencies Unintentional Hydrogenation Uniaxial Stress Studies GaAs:Be-H GaAs:Si Ga -H Unintentional Complexes Cluster Calculations for H-Related Complexes in GaAs Isolated H Be-H Complexes Si Ga -H Complexes Conclusion Hydrogen, and Semiconductor Surfaces and Surface Layers Etching of Silicon Surfaces by Hydrogen Plasma Etching Dry Etching of Silicon Dry Etching of GaAs and InP Implantation of Protons Silicon Gallium Arsenide Hydrogen on Semiconductor Surfaces Silicon Surfaces Gallium Arsenide Surfaces Indium Phosphide Surfaces Hydrogen-Related Defects in Semiconductors Hydrogen-Related Defects in Silicon Electron-Irradiation of Si(H) Proton or Neutron Irradiation of Silicon Implant-Induced Levels in Silicon Shallow H-Related Donors in Silicon Hydrogen-Related Defects in Germanium Hydrogen-Related Defects in Compound Semiconductors Hydrogen-Related IR Bands in Silicon Diffusion of Hydrogen in Semiconductors Diffusion of Hydrogen in Solids Diffusion Equations Analysis of Diffusion Profiles Effects of Charge States Effect of Molecule Formation Effect of Hydrogen Trapping Effects of Multiple Trapping Comparison of Theory and Experiment Diffusion of Hydrogen in Silicon Early Diffusion Experiments 221 IX

5 9.4.2 Experimentally Determined Diffusivities Additional Features of Hydrogen Diffusion Rapid Diffusion of Compensating Species During Polishing Charge States and Hydrogen Diffusion Theoretical Treatments of Diffusion Paths Summary of Diffusion Behavior Diffusion of Hydrogen in Germanium Diffusion in Gallium Arsenide Dependence of Diffusion on Experimental Conditions Effect of Charge on Hydrogen Diffusion Diffusion of Hydrogen in Other Materials Summary Resonance Studies Pertinent to Hydrogen in Semiconductors Electron Paramagnetic Resonance Theory of Electron Paramagnetic Resonance Experimental EPR Studies Related Muon Studies Use of Muon Spectroscopy Comparison of Theory and Experiment Perturbed Angular Correlation Experimental РАС Studies Role of Copper in Silicon Prevalence of Hydrogen Incorporation and Device Applications Experimental Studies of Hydrogen Incorporation Hydrogen in Silicon Dioxide Bias Application to Diode Structures Injection of Hydrogen by Chemical Etching Hydrogen Injection by Ion Bombardment Hydrogen Injection During Metal Deposition Wafer Polishing Boiling in Water Proton Implantation Hydrogen in As-Received Wafers Hydrogen Sensing with MOS Structures Hydrogen in III-V Semiconductors As-Grown Material Annealing in Hydrogen Ion-Beam Processing Device Applications 316 X

6 12. Hydrogen and the Mechanical Properties of Semiconductors Hydrogen Embrittlement Reconstruction in the Presence of Hydrogen Defect Aggregation Hydrogen-Related Defects Plasma-Induced Defects Theoretical Treatments of Hydrogen-Induced Defects III-V Semiconductors 330 References 331 Subject Index 361 XI