Microelectronics Workshop

Transcription

1 The 25 th Microelectronics Workshop Technology for commodification of small size MLCC with high capacitance for Space Application FUKUI MURATA MFG.CO.,LTD. Yuji Yamada

2 CONTENTS 1.Background 2.Present small size and high capacitance MLCC products for space application 3.Technology for small size and high capacitance 1)improvement of macro structure to reduce early failure 2)improvement of micro structure to prolong wear-out 3)conclusion 4.Present MURATA s MLCC

3 CONTENTS 1.Background 2.Present small size and high capacitance MLCC products for space application 3.Technology for small size and high capacitance 1)improvement of macro structure to reduce early failure 2)improvement of micro structure to prolong wear-out 3)conclusion 4.Present MURATA s MLCC

4 Background 1.MURATA had required small size and high capacitance MLCC for POL DCDC converter from JAXA and Nippon Avionics Co., Ltd. POL DCDC convertor 2.MURATA consider using automotive grade MLCC for space applications. 3.We determined voltage acceleration factor and experimental conditions, because of using thinner dielectric technology. 4.JUNE 2012, 5items qualified for space application parts from JAXA. High capacitance MLCC (Photo.: Nippon Avionics Co., Ltd.)

5 CONTENTS 1.Background 2.Present small size and high capacitance MLCC products for space application 3.Technology for small size and high capacitance 1)improvement of macro structure to reduce early failure 2)improvement of micro structure to prolong wear-out 3)conclusion 4.Present MURATA s MLCC

6 Small size and high capacitance MLCC products for space application CAPACITORS, MINIATURE, HIGH-CAPACITY, SURFACE MOUNT, FINE CERAMIC DIELECTRIC (J2040/M105), HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR QTS:JAXA-QTS-2040/M105 CHARACTERISTIC Used thinner dielectric technology Design Thin dielectric thin : 20um 3~9um Development for POL DC/DC convertor Failure rate level S level CHARACTERISTIC X7R Capacitance tolerance K (±10%) M (±20%) Terminal surface : Y (Ni/Sn plate) S (solder coat over Y)

7 Small size and high capacitance MLCC products for space application L W T Pho to. Part No. Ratio voltage (V) Capacita nce (uf) Nominal Dimension L W T (mm) Dielectric thickness (um) Mass (mg) (Typical) 1 J2040/M X7RC J2040/M X7RB J2040/M X7RB J2040/M X7RA J2040/M X7RB

8 J2040/M105 (new) vs J2040/L104(current) J2040/M105 parts number 1608X7RC104K (25V) 1608X7RB105K (8V) 3216X7RB106K (8V) 3216X7RA226M (3.5V) 3225X7RB226M (8V) Cap size 1608X7RB X7RC104 J2040/L X7RA226 Cap size 3216X7RB106 Cap Ratio voltage (V) 3225size 3225X7RB Ratio voltage (V) Ratio voltage (V)

9 From automotive to space grade Automotive GCM188R11H104KA42D GCM188R71C105KA49D GCM31CR71C106KA49L GCM31CR70J226KE30B GCM32ER71C226KE15L Up-screening Solder coating Ratio voltage 1/2 Space J2040/M X7RC104 J2040/M X7RB105 J2040/M X7RB106 J2040/M X7RA226 J2040/M X7RB226 Space grade MLCC were based on automotive grade, Added up-screening as C-SAM and BURN IN, hot solder dipping, and ratio voltage down to 1/2

10 Trends in capacitance per volume Capacitance/Volume Ratio [uf/mm 3 ] um 1um um year For commodity application For space application

11 CONTENTS 1.Background 2.Present small size and high capacitance MLCC products for space application 3.Technology for small size and high capacitance 1)improvement of macro structure to reduce early failure 2)improvement of micro structure to prolong wear-out 3)conclusion 4.Present MURATA s MLCC

12 CERAMIC CAPACITOR PROCESS INCOMING INSP. OF CERAMIC MATERIAL MIXING DE-AIRING SHEET CASTING CUTTING FIRING TERMINATION TERMINATION FIRING ELECTRODE PRINTING TERMINATION PLATING STACKING & PRESSING SORTING OUTGOING INSPECTION HOT SOLDER DIPPING C-SAM & BURN-IN SORTING GROUP A INSPCTION PERIODIC QCI AUTOMOTIVE Grade Addition for SPACE Grade 12

13 Typical failure rate of electrical component 1)improvement of macro structure 2)Improvement of micro structure

14 1)Improvement of macro structure to reduce early failure Unevenness of inner electrode Dielectric layer Similar technology should lead to Void Inner electrode Areas of non-uniform composition Low withstanding voltage, shorter life, poor reliability, etc. New technology Technology to minimize early failure; 1. High density of green film 2. Thin and smooth electrode 3. Fine ceramics

15 絶縁抵抗 [Ω ] IR [Ω] Analysis of IR degradation component 1.0E E+06 Ni 1.0E E Time [Hr] void of layer Degradation of IR is caused by mictro defective point of ceramics layer or inner electrode.

16 Uniformity of Composition Former Max peak : um Current Max peak : <0.5um Surface roughness of inner electrode

17 Microparticulation of Ni and fine film formation powder 2006 Film smoothing Film continuity transmitted light 200μm micropaticulation max projection 0.1~0.2μm smoothing continuity max projection 0.06μm 200μm

18 Raw ceramics sheeting technology conventional technology of ceramics dispersion new technology surface cross section tiny pore of ceramics sheet are reduced and stuffed closely.

19 1)Improvement of macro structure to reduce early failure Unevenness of inner electrode Dielectric layer Similar technology should lead to Void Inner electrode Areas of non-uniform composition Low withstanding voltage, shorter life, poor reliability, etc. New technology Technology to minimize early failure; 1. High density of green film 2. Thin and smooth electrode 3. Fine ceramics

20 Failure time vs number of grains As grain decrease, failure time is shorten. component reliability have correlation with the number of ceramics

21 Fine ceramic powder for increasing number of grain Pore Former High density Fine ceramic powder Current 2um FE-SEM: Surface of green film

22 CONTENTS 1.Background 2.Present small size and high capacitance MLCC products for space application 3.Technology for small size and high capacitance 1)improvement of macro structure to reduce early failure 2)improvement of micro structure to prolong wear-out 3)conclusion 4.Present MURATA s MLCC

23 Typical failure rate of electrical component 1)improvement of macro structure 2)Improvement of micro structure

24 2)improvement of micro structure to prolong wear-out Base metal electrode Need to fire under low O2 atmosphere. After firing, the oxygen vacancies are generated. The oxygen vacancies have positive charge. Crystal structures of Barium Titanate Ba 2+ O 2- Ti 4+ Anode(+) Anode(+) Vo Vo Vo Vo Vo Vo Cathode( -) The cluster of oxygen vacancy generate schottky emission which result in ceramics degradation. ->Necessity to maintain dielectrics strength with material technology. E Vo Vo e' Vo Cathode(-) schottky emission E

25 Mechanism of IR degradation under Electric field Analysis of oxygen vacancy distribution by Cathode Luminescence Initial After High Temp Load Test Cathode Cathode Anode Anode Cathode Oxygen vacancies are distributed. (There is no luminescence. ) Cathode Oxygen vacancies move to cathode. (luminescence is observed. ) Test condition: 105deg.C, 10kV/mm, after 24 hours

26 MTTF / hour IR(Ω ) Control of the microstructure Pursuit for thinner dielectric layer Electrode Dielectrics Grain boundary Keeping enough number of grain boundaries by reducing grain size To improve the performance of 1E+10 grain boundary 1E grain boundaries/layer 7.6 grain boundaries/layer 6.6 grain boundaries/layer 5.4 grain boundaries/layer Electrode 1E+08 1E+07 Electrode interface Control of the electron injection by the electrical barrier Critical oxygen vacancy accumulation Anode(+) Grain interior 1E 時間 (hr) Time(h) Enhancing insulation characteristics of grain interior by doping Core-shell structure 100 shell core E 10 Vo Vo Vo Cathode(-) BaTiO 3 (BaCa)TiO ,30kV/mm Ca concentration, x

27 Effect of suppressing oxygen vacancy (V o)movement by Rare earth doping (image view) Doping rare earth for displacing Ba site Generated barium vacancy (V Ba ) Join V O and V Ba Suppress V O movement (image view) Ba Ti O V o '' V Ba Re Mn [001] after high-temperature and high-electric field condition, oxygen vacancy move to cathode. [110]

28 Core-Shell micro structure Shell Grain boundary Core shell core Core Shell Boundary ρ (Ωcm) Thinner Shell Low IR

29 Experimental MLCC electrode Dielectric layer 1μm electrode RE SEMmicrograph 1.0um-thick dielectric layer and Ni electrode. The dielectric is a BaTiO3-based X7R-type material form a core-shell structure. TEM(-EDX) micrograph

30 CONTENTS 1.Background 2.Present small size and high capacitance MLCC products for space application 3.Technology for small size and high capacitance 1)improvement of macro structure to reduce early failure 2)improvement of micro structure to prolong wear-out 3)conclusion 4.Present MURATA s MLCC

31 3)conclusion Technology for small size and high capacitance 1. Uniformity - inner electrode - high density film - ceramic grain 2. Control ceramic characteristic and grain boundary 3. Control firing reaction process and internal stress 4. The process technology without contamination and damage to elements (less than ppb order) 5. Development high ε material

32 CONTENTS 1.Background 2.Present small size and high capacitance MLCC products for space application 3.Technology for small size and high capacitance 1)improvement macro structure to reduce early failure 2)improvement micro structure to prolong wear-out 3)conclusion 4.Present MURATA s MLCC

33 MURATA s MLCC products Low ESL Capacitor <LLL> <NFM> Normal MLCC <GRM Hi-Capacitance> <GRM02 GRM03> <GRM Low Profile> C-Array <GNM> Wide Line Capacitor <GW> High Q Capacitor <GJM,GQM> Thin Dielectric BME Technology Fine Ceramics High Reliability Core Competence for Murata Technology Micro Chip Capacitor <GMA> Low acoustic capacitor <KRM>

34 単位体積あたりの静電容量 (μ F/mm3) 1996 Capacitive Volumetric Efficiency and Dielectric Layer Thickness Trends 3μ m Volumetric efficiency (μ F/mm3) (3216) 10μF Dielectric Thickness 3μm Year 年 μm 2μ m 1μm 0805(2012) 10μF μm 1μ m 0.5μm 0603(1608) 10μF 2009 Ni BaTiO (1005) 10μF 0.7μ m

35 MLCC size trend (1005) 1.0mm 0.5mm (0603) 0.6mm 0.3mm Mechanical Pencil 0.5mmφ (0402)0.4mm 0.2mm

36 MLCC development road map (Technology break-through)

37 For Automotive application Small size, high capacitance, High voltage High temperature Safety mounting Application specific capacitor Line-up expansion GCM series X7R,U2J DC250V DC1kV (DC2kV-3.15kV) (Under evelopment) 150 guarantee RHE/RHD series Soft termination Lead type Soft termination GCJ series AC capacitor for PHEV/EV DE6 series Lead type KCM/KC3 series

38 For Switching Power Supply ~ Class 2 C1 : X Capacitor 10~33nF/X2 x 1pcs Chip : Type GB C4 : Snubber 100~1000pF/DC630~1kV x 1pcs Chip : GRM/U2J Lead : DEH series DEA series DES series C3 : Snubber 1~220nF/DC250~630V x 1pcs Chip : GRM/X7R Lead : DEH,DES series or RDE series DC OUT AC IN 100 ~ 220V C2 C3 5 ~ 15V C1 + GB C2 or C4 Controller 470~4700pF/Y1x 2pcs Lead : Type KX KX C2 : Y Capacitor KY or 470~4700pF/Y2 x 3pcs Lead : Type KY Chip : Type GF GF C5 C5 : Primary - Secondary Isolation Capacitor 470~4700pF/Y1x 1pcs Lead : Type KX 470~4700pF/Y2 x 2pcs Lead : Type KY Chip : Type GF KX KY or GF KY or GF KX KY or GF KY or GF

39 For IC package Embedded Capacitor -> Murata GRU series ( Thickness : 0.15/0.20/0.22/0.25/0.33mmMax) LSI Low profile cap. Low profile cap(for Bottom side mounting) -> Murata GRM15Y/GRM152/GRM153 ( Thickness : 0.15, 0.22, 0.33mmMax)

40 Low Acoustic Type MLCC Cause of Acoustic Noise : - Piezoelectric effect of dielectric material - Circuit board vibration because of the above GJ8 Series For : Smart Phone, TV, Panel KRM Series For : PC, TV, Panel, Base Station ZRA Series For : All applications

41 Low ESR(High Q) / Low ESL capacitor Impedance[ohm] Low ESR(High Q) 10 About 1/3 ESL value Comparison of Z-Freq: Cap.value 1uF on actual board, replaceable 2-3pcs GRM with 1pcs NFM Same configuratuon GJM 500MHz~10GHz Cap. 30pF:Q 1000 GQM 500MHz~10GHz Cap 30pF:Q 1400 Low ESL Merit 1Noise suppression 2Downsizing 3Cost down General type (GRM155B31A105KE15 ) Reversed geometry type (LLL185C70J105ME14) 3terminal type (NFM18PS105R0J3 ) 10m About 1/10 ESL value on actual board, replaceable 4-6pcs with 1pcs NFM 1m 1M 10M 100M Frequency[Hz] Cap. is dominant ESL is dominant

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43 MURATA HP 1.Parts number 2.Specification 3.Characteristic data 4.Electorical characteristic simulation 5.MLCC Q&A 6.New products information 7.Catalogue 8.Technical information 9.New package suggestion Please access MURATA Web. If you have any questions, contact to MURATA s sales friendly anytime.

44 MURATA will strive to become your most reliable partner by offering value-added capacitors

45 Thank you very much!