Aprima IS700 Adhesive Paste PDM-5001

Transcription

1 Aprima IS700 Adhesive Paste PDM-5001 Designed for use as a dispensable coating that serves as a hot-melt adhesive After cured, it produces no residue at 330 C, thus preventing stiction of MEMS devices Uses include die-attach and coating/lamination of flexible circuits and circuit boards. Lid: Ni coated Hermetically and sealed by Sealed Lead Lid -based solder Die (e.g. DieMEMS) Layered IS IS700 Ceramic Case Paste Properties Viscosity (25 o C) 15,000 50,000 cps Solvent Bake Conditions NMP 120 o C for 30 min 330 o C for 30 min Film Properties Moisture Absorption 1.0% Ionic Impurities < 5 ppm (Na +, NH4 +, K +, HCOO -, Cl - ) Glass Transition Temperature 165C Coefficient of Thermal Expansion 90 ppm/c Thermal Decomposition Temperature 510C (5 wt% TGA) Tensile Strength 115 MPa Elongation (Break Point) 4% Tensile Modulus 3.2 GPa 1

2 B: Temp (degc) PDM-5004 ( ) PDM-5004 LED & OLED Light Extraction Dispensable, low viscosity, solventless fluid which can thermally cure to a high strength thermoset with high refractive index for improved light extraction Die-Shear Strength (MPa) 5 13 Good 11 Adhesive (10-16MPa) Post-Cure 5 Low Viscosity Fluids for Dispensability Refractive Index Tuned to Increase Light Extraction Efficiency of LED US 7,910,674 US 7,875,686 US 6,903,171 US 6,677,175 US 6,455,650 Polymer Refractive Index Poly(dimethyl siloxane) 1.40 Poly(vinylidene fluoride) 1.42 Poly(methyl acrylate) 1.48 Poly(vinyl alcohol) 1.50 Poly(cyclohexyl methacrylate) 1.51 Poly(acrylonitrile) 1.52 Poly(acrylic acid) 1.53 Poly(methyl phenyl siloxane) 1.53 Styrene/maleic anhydride copolymer 1.56 Poly(ethylene terephthalate) 1.58 Polycarbonate resin 1.59 Polystyrene 1.59 Polysulfone resin 1.63 A: time (min) 2

3 PDM-5007 Temporary Wafer Bonding Adhesives US 9,117,861 US 9,051,452 US 8,696,864 US 8,633,259 Heat Resistant Temporary Wafer Bonding Adhesive employed for backgrinding, TSV, RDL, etc Low Stress debonding successfully utilized for fragile, GaAs wafers PDM-5007 (heating or mechanical force) 3

4 Die-shear Strength [MPa] Critical Dimension [5μm trench] PDM-5010 Photopatternable Adhesive US 9,562,124 US 9,341,949 US 8,986,923 US 8,580,477 Spin-coatable material capable of photopatterning (solvent or TMAH develop) followed by thermocompressive bondability Board Bare Si(100µm) 140 C 1sec PDM-5010 (10µm) Bare Si(725µm) Die-Attach Film No Voids 1 x 1cm 6 5:1 Aspect Ratio µm 2µm Die shear test 5µm Tool Shear speed 300µm/sec Bare Si (15x15mm,775µmt) Bare Si (725µmt) Hot plate PDM C Shear Temperature! Only 300mJ/cm 2 for 13µm film Exposure Dose [mj/cm 2 ] 4

5 PDM-5013 Aqueous Base-Developable RDL Materials Spin-coatable, TMAH-developable, positive-tone, photopatternable dielectric for redistribution layers (RDL) or other applications requiring a balance of photopatternability and thermo-mechanical properties RDL uses photopatternable dielectric materials to aid the relocation of copper wires 10µm Thick US 9,422,376 US 9,291,901 US 9,261,782 US 8,748,074 US 8,715,900 Properties PDM-5013 Dark-Field Loss 15% Cure loss <10% Curing Condition Internal Stress T g CTE ( C) T d5 5 <200 C 10-25MPa C ppm/ C >300 C Tensile Modulus 2.4 GPa Elongation to Break 30-40% Tensile Strength 80-90MPa Pot-Life Good Chemical Resistance Good Adhesion to Metals Good Reliability Good 10µm 500mJ/cm µm Profile Unaffected after 200 C Cure

6 PDM-5019 High Aspect Ratio Photopatterning US 8,986,923 Spin-coatable, TMAH-developable, negative-tone, photopatternable dielectric for high aspect ratio applications 7:1 500mJ/cm 2 High Contrast (=12.2) useful to achieve straight sidewalls at high film thicknesses 70 µm tall hollow collars e-beam Patternable 350nm wide 200nm thick 10 µc/cm 2 Journal of Electronic Materials, 2009, 38(6), Journal of Applied Polymer Science, 2011, 120(4), 1916

7 PDM-5022 Low Wafer Stress Photopatternable Material Spin-coatable, solvent-developable, negative-tone, photopatternable dielectric for redistribution layers (RDL) or other applications requiring a balance of photopatternability, adhesion, and thermo-mechanical properties 7 Properties Tensile strength Modulus PDM MPa 1.2 GPa Elongation 24 % Tg CTE 280 C 212 ppm 5% weight loss 286 C Decomposition Dielectric constant 514 C 1MHz Moisture uptake 0.1 % Wafer warpage 15.7 µm Internal stress Pot-Life Chemical Resistance Adhesion to Metals 7 MPa Good Good Good US 8,030,425 US 8,053,515 Low Wafer Stress Material Avoids Warpage Warpage Can Cause Problems with Other Materials Straight Sidewall with 0 µm Focus 5 µm Tunable Sidewall with 30 µm Focus 5 µm

8 PDM-5025 Thick Film Photopatternability Spin-coatable, negative-tone, polymer capable of extremely thick photopatterning and exceptional degree of planarization (DOP) Single layer: 150µm vias 63µm wide 325 µm tall US 8,030,425 US 8,053,515 PDM-5025 PDM µm of PDM-5025 over 7µm topology Highly Planar Surface Reference Line Highly Planar Surface Reference Line 30µm of PDM-5025 over 15µm topology 8

9 PDM-5028 Self-Photopatternable Polymers Attributes: Photopatternable Self-Crosslinking at 365nm No PAG or sensitizer required Low-k Good adhesion underlying and subsequent layers Photoimaging of PNB without PAG using i-line Stepper US 9,175,123 US 9,490,439 US 9,425,417 phexnb Zeonex 480 Topas 6013S-04 Photoimaging of 100% Hydrocarbon Polymers Achieved with Special Cross-linking! 9

10 PDM-5031 Photopatternable, Dry-Etch Resist Spin-coatable photoresist that can be dry-etched around cavities to create air gaps 2.5 µm lines/spaces Etch Rate of AQEXPMAT8001 (50/50 Ar/O 2, 300W, 300 mtorr) 4.5 Film Thickness ( mm) y = x mm/min R 2 = 0.98 y = x R mm/min = 0.99 Replicate1 Replicate2 Etch Conditions: 50/50 Ar/O 2, 300W, 300mtorr Time (secs) Etched MEMS structure Before etching Cap layer PDM-5031 Metal PDM-5031 Sidewall angle: 90 After etching Cap layer (Was PDM-5031) Metal (Was PDM-5031) US 8,986,923 Si Si 10

11 Weight (%) PDM-5034 The ultimate dielectric: Air High Temp.Type Low Temp. Type Substrate Spin-coat PDM-5034 Substrate Remove Mask Temp. (degc) Substrate Deposit Hard Mask (Metal, SiO 2 ) Substate Photolithography & Etch Mask PDM-5034 Substrate Plasma Etch polymer Substrate Deposit Encapsulating Material Substrate Decompose Sacrificial Polymer Air Substrate Cross-Section of Air Tunnels with Oxide Overcoat Sub-micron Air-Gaps Was PDM-5034 Journal of Microelectro-mechanical Systems, 2001, 10, 400 Journal of Microelectromechanics and Microengineering 2006, 16, nm Cu lines 280 nm wide air-gaps PECVD Oxide Cap IEEE Electron Device Letters, 2000, 21, 557

12 PDM-5037 Tacky Solder Flux US 9,505,948 US 8,729,166 US 8,575,248 Commercial no-clean fluxes leave residues that are difficult to remove No-residue flux is the technical solution to finer pitch, smaller form factor, and higher I/O density packaging where residue cleaning is not preferred Promerus No-Residue Flux Commercial No-clean Flux Technology Sacrificial material No-clean, some with rosin Components All are non-halogenated Some are halogenated Residue Low to no residue Leaves non-corrosive residue Residue removal Not required Required, but not always possible Residue issues Not applicable Joint stress, electrical leakage, dendritic growth Room-temp stability >6 months <8 hours Complexity Multi-functional additives, total components <5 >20 components Die PDM-5037 Substrate Die Substrate Die Substrate 12

13 PDM-5040 Low Optical Density Photoresist US 8,329,838 PDM-5040 High O.D. Low O.D. Pattern profile Poor Line Edge Roughness (LER) 100nm Good LER 100nm Resist thickness: 225nm PAB: 95 c - 60s Illumination: 193 nm, NA 0.60, 2/3 Annular Reticle: 6%HT PEB: 95 c - 60s Development: NMD-3 (2.38%), 30s Target pattern: 120nm L/S O.D. (Abs/µm) ,329,838 Methacrylate Hybrid Acrylate PNB Acryl ratio : 0 Acryl ratio : 60 Acryl ratio : 100 PDM-5040 Increasing PDM-5040 Content Decreases Film Roughness 500nm 500nm 500nm 500nm 13 Rate : 55.4nm/min Rate : 52.1nm/min Rate : 49.5nm/min Rate : 50.0nm/min Proc. SPIE. Int. Soc. Opt. Eng., 2005, 5753, 149

14 PDM-5043 Photo-Alignable Layer for LCD Ultra-thin coatings capable of achieving alignment of liquid crystals after exposure through polarizer Film Thickness (nm) Polarized Exposure Dosage (J/cm 2 ) Surface Anchoring Energy (J/m 2 ) Pretilt Angle (deg) LC Switching Time (msec) 2.2 x 10-5 <<1 40 rubbed 1.54 x Rubbing can produce irregular scratches & defects Pending Photo-Alignment removes defects and produces nanogrooves to aid alignment of LC s 1-5 nm 50 nm PDM-5043 PDM Demonstrated uniform alignment of liquid crystals

15 PDM-5046 Flexible Substrates US 8,829,087 US 7,022,790 US 5,705,503 Polymer films with high transparency and high T g for flexible substrates TMA CTE C Metricon Tg ( C) Modulus (GPa) T 99% ( C) TGA T 95% ( C) UV-Vis n n T% 400nm T% 550nm d (µm) ~ Instron σ MAX (MPa) ε MAX (%)

16 PDM-5049 Top Coat for Immersion Photolithography US US Critical TC polymer properties Orthogonal solvent solubility Low OD Hydrophobic: high CA and low water SA Fast TMAH (developer) dissolution rate Non-retained Immersion Fluid Coat PR Coat TC Expose Develop Type of Defects Reduced with Use of PDM

17 PDM-5055 Thixotropic Polymer Solution Pending Thread Adhesives Helps Paint Stay on Walls Useful for Solder Pastes 17

18 PDM-5058 Thin film composite (TFC) membrane PNB TFC membranes can separate organics from water US 9,468,890 US 8,678,203 US 8,470,944 US 8,215,496 1 µm thick PDM-5058 PAN UF membrane Feed Chemical Separation Factor Flux (g/m²/hour) for 10um thick Feed Concentration n-butanol % Isobutanol % Propanol % Ethanol % % Ethyl Acetate % Methyl Ethyl Ketone % Tetrahydrofuran % 18

19 PDM-5061 Low tan at High Frequency Solvent-less system that is thermally catalyzed within a mold to produce a flame-resistant part having low signal loss at high frequencies US UL94 V-0 S21(d B) FR-4 PTFE 開発品 (SB1) 伝送特性 (L=40mm) Transmission Loss (L=40mm) FR-4 PTFE PDM Frequency (GHz) 周波数 (GHz) PDM-5061 Ceramic/Teflon FR-4: ε=4.72, tanδ= (50GHz; rt) Z 0 =50Ω, Thickness=0.26mm PTFE: ε=2.29, tanδ= (50GHz; rt) Z 0 =50Ω, Thickness=0.38mm PDM-5061: ε=2.28, tanδ= (50GHz; rt) Z 0 =50Ω, Thickness=0.30mm 19

20 PDM-5064 Functionalized Norbornenes with Optional Stereospecificity Functionalized norbornenes contain a variety of reactive and non-reactive groups. Common substituents include: Acetate [-OC(O)R] Ester [-CO 2 R] Alcohol [-OH] Ether [-OR] Amine [-CH 2 NH 2 ] Alkyl [-R] Ketone [-C(O)R] Anhydride [-RC(O)O(O)CR] Silyl Ether [-Si(OR) 3 ] Epoxide [-CH 2 CH(O)CH 2 ] Phenyl [-Ar] Vinyl [-CH=CH 2 ] Isomer Ratio Typically ~ 80:20 Endo/Exo X X endo isomer exo isomer Single Isomer Versions Possible For Certain Monomers US 8,704,022 US 7,662,996 20

21 PDM-5067 PNB Polymer Architecture Control US 9,415,354 Living Polymerization Criteria M n increase linear with conversion PDI shows narrow distribution (i.e. <1.2) M n increase linear with Monomer/Initiator Linear Block Polymer Structures A-B Brush Polymer Graft Polymer Telechelic Control of aggregation Uniform molecular size Localized functionalization Functional group A-B-A Phase Separation M w Controllable from10k to 500K Some Head/End-Group Functionality Possible 21

22 PDM-5070 PolyNorbornene is Moldable Pending Linear structure Linear polymer Melt Flow Rate Melt Viscosity 0.6 g/10min 162cp C) Mold Conditions 150 C 15min 1000psi Hyper-branch structure Branch polymer Melt Flow Rate 37.7 g/10min Melt viscosity 43cp (@200 C) 160 C/2hr C/2hr PDM-5070 Moldable PNB Properties T g (DMA)/ C 221 Td 5 / C 363 G /MPa 1200 G /MPa 70 Tensile strength/mpa 13 Tensile modulus/mpa 343 Elongation % 24 22