Radiation Protection Dosimetry (2014), Vol. 158, No. 4, pp Advance Access publication 6 October 2013

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1 Radiation Protection Dosimetry (2014), Vol. 158, No. 4, pp Advance Access publication 6 October 2013 doi: /rpd/nct244 THERMOLUMINESCENCE RESPONSES OF TERBIUM-DOPED MAGNESIUM ORTHOSILICATE WITH DIFFERENT SYNTHESIS CONDITIONS Y. Wang 1, *, Y. Jiang 1, X. Chu 2,J.Xu 3 and P. D. Townsend 4 1 School of Science, China University of Geosciences, Beijing , China 2 Radiation and Environment Laboratory, China University of Geosciences, Beijing , China 3 School of Material Science and Engineer, China University of Geosciences, Beijing , China 4 School of Science and Technology, University of Sussex, Brighton, BN1 9QH UK *Corresponding author: wyf @gmail.com Received 29 July 2013; revised 6 September 2013; accepted 11 September 2013 Numerous materials have been proposed for thermoluminescence dosemeter, and the example of highest sensitivity is cited as magnesium orthosilicate doped with terbium (Mg 2 SiO 4 :Tb). Nevertheless, the material is currently not commercially attractive because the sensitivity varies greatly with synthesis techniques. This is a multi-parameter problem, and the current work explores some of the conditions required to consistently enhance the response. These new results show that to get a high TL response, Mg 2 SiO 4 :Tb should be prepared at a high temperature of at least 15008C, for sintering times of several hours. In the current example, the optimum time was 6 h. Signals also vary with the terbium activator concentration, and good responses were achieved with a concentration of Tb at 5 wt %. Overall, this suggests that with careful preparation, the potentially high dosimetry performance might be exploited. The inherent problem of concentration quenching is considered, and the potential benefits of processing the powder with pulse laser annealing are reviewed in the light of successful luminescence and laser studies for rareearth-doped laser materials. INTRODUCTION A plethora of materials has been considered for thermoluminescence radiation dosemeter and these range from standard commercial items to research demonstrators. Examples of materials considered include Mg 2 SiO 4 :Tb, Al 2 O 3 :Si, Ti, CaSO 4 :Tm, CaSO 4 :Dy, Li 2 B 4 O 7 :Mn and LiF TLD-100. Of particular potential interest, because of its high sensitivity, is magnesium orthosilicate doped with terbium (Mg 2 SiO 4 :Tb). This phosphor was introduced for consideration in radiation dosimetry in 1971 (1, 2). The key benefit is its high gamma sensitivity, which is times that of LiF:Mg,Ti. It has a moderate photon energy dependence; at KeV, the response is 5 times that when compared with signals from Co 60. Once manufactured, it requires only a simple annealing treatment (5008C for half one hour), and it has excellent fading stability. As it is mostly formed of relatively light elements, its effective atomic number is 11, so that it is useful in environmental and personnel monitoring (3). Several investigations have already been carried out on this phosphor, i.e. optical and thermal effects on the TL response (4, 5), sensitisation and photo-transfer (6) and some phenomenological parameters such as activation energy (E), frequency factor (s) and kinetics order (7). An even more interesting bonus for dosimetry with Mg 2 SiO 4 :Tb is that it has the highest known intrinsic TL sensitivity to UV radiation (wavelength nm). Consequently, this makes it a promising TL phosphor for UV dosemeter (8). Recently, it was reported that Mg 2 SiO 4 :Tb can be used in fibre optic dosimetry to assess the in vivo, real-time dose (9). However, as mentioned in the study by Prokic and Yukihara (10), the characteristics of this phosphor vary considerably with the production techniques. Mg 2 SiO 4 :Tb is a relatively complex TL material whose glow curve shapes and TL intensities are strongly influenced by the preparation method. Problems arise as there are a rangeofphasesofthemgo SiO 2 system. Additionally, the performance depends on the activator concentration. Both types of feature are potentially controllable, and certainly, the terbium concentration could be optimised. However, the chemistry is sensitive to the starting materials as well as the temperature and duration of the sintering process that is applied (1, 2, 10 12). All of these synthesis problems are familiar. Phosphors with properties controlled by dopants such as terbium will be sensitive to the overall purity (and/or intentionally added co-dopants), as well as intrinsic defect sites in the material. Although the terbium concentrations are likely to be high, at around say 5 wt % (which is extremely high compared with the doping levels in say LiF TLD materials), purity control will still be an issue. More crucially, the dispersion of a uniform doping within a sintered package of starting materials is difficult to achieve. As indicated later, the starting materials include Mg(OH) 2.6H 2 O, SiO 2 and the Tb 4 O 7 activator. The materials need to be ground into fine powder, and this alters their structural properties # The Author Published by Oxford University Press. All rights reserved. For Permissions, please journals.permissions@oup.com

2 by introducing not only surface defects but also a dislocation network, which in turn controls inter-diffusion of the mixture. Some of the material will melt, whilst others, such as the carbonate, will dissociate and CO 2 will be lost during sintering. Overall, any molten material will ideally act as a flux in which inter-grain diffusion and doping can take place if sufficient processing time is allowed. An optimum time and temperature combination is inevitable that balances uniform dispersion of the activator and retention of a suitable host phase. This is therefore a problem that must be addressed by empirical experimentation, even though one can use crystallographic data to follow and guide the structural changes that are taking place. Melting and dissociation temperatures cannot be considered in isolation as the transient phases formed during sintering will be interactive and some phases, such as for MgO or Tb 2 O 3, have extremely high melting points ( 2825 and 23038C, respectively). With such a multi-parameter problem, no study can be fully comprehensive but the present work attempts to improve the dosimetry responses by considering some of the preparation conditions that are crucial to this manufacturing problem. MATERIALS AND METHODS Mg 2 SiO 4 :Tb has been synthesised by a sintering technique under the reaction between high purity Mg(OH) 2.6H 2 OandSiO 2 with the addition of Tb 4 O 7 as an activator. The mixtures were heated in air in a furnace at temperatures of.10008c. The heating rate of the furnace was set up as 6008C per hour to reach the aim temperature. The mixtures had then been sintered at the aim temperature for certain sintering hours. After sintering, phosphors would be cooled down slowly to room temperature. The cooling process took 24 h. All the sintered materials were then ground into a fine powder form and sieved through a 200-mesh sieve for thermoluminescence experiments. The X-ray diffraction (XRD) pattern of the phosphors was carried out on the material after it had been sieved, and this indicated the presence of a crystal structure of Mg 2 SiO 4 :Tb. The XRD pattern was collected by using XD-2 instrument, and the scan range is from 20 to 808 with step of The photoluminescence experiment was made with a Hitachi F-4600 instrument, to record the absorption and emission luminescence spectra. A Xenon lamp, with an output power of 150 W, was used as a light source. TL response of all the samples was collected by an RGD-3B TL reader, using 50 mg samples, after the powder had been irradiated with X rays. The TL detection spanned the nominal temperature range from room temperature to 4008C at a heating rate of 158C per second. Although the current dosimetrypractiseistocitetemperatureintermsofthe TL reader output (i.e. the temperature of the heater), thetruetlpeaktemperatureswillbelower,butfor Y. WANG ETAL. ease of comparison with other articles, the temperatures are not corrected here. Correction errors have been discussed elsewhere (13). RESULTS AND DISCUSSION Synthesis temperature dependence Many of the synthesis problems are difficult to quantify, but it is possible to offer control over both the sintering temperature and the duration of the heating of the Mg 2 SiO 4 :Tb phosphor. During the preparation, a mix of Mg(OH) 2.6H 2 O, SiO 2 and Tb 4 O 7 was heated to different high temperatures of.10008c for up to 8 h. The sintered material was then ground into a fine powder form and sieved for XRD experiments. Figure 1 shows the XRD results of phosphors with the sintering temperatures 1200, 1400 and 15008C, respectively. The strongest peaks appearing on both 1200 and 14008C data are not indicating Mg 2 SiO 4 but the existence of MgO. Only when the temperature is high enough (in this case 15008C) do these MgO peaks weaken and a series of smaller diffraction peaks emerge, which are consistent with a phase of Mg 2 SiO 4. This suggests that a minimum temperature of 15008C is needed. The result shows that the high temperature, which is.15008c, is a critical condition for the preparation of Mg 2 SiO 4 :Tb. Even higher temperatures were not used here because of the limitation of a suitable furnace. The need for a high temperature is consistent with the data on sintering at 16608C wheremg 2 SiO 4 :Tb was detected in the work of Prokic and Yukihara (10).The phosphor materials generated below 15008C are not Mg 2 SiO 4 ; hence, the authors then concentrated measurements on the phosphors prepared with the synthesis temperature of 15008C. Duration of sintering Sintering is not instantaneous as it includes melting, and both liquid- and solid-state diffusion of the components Figure 1. The XRD patterns of phosphors being produced with different sintering temperatures. 374

3 that can allow not only crystalline formation but optimal site location of the Tb dopants. One assumes that longer time periods may improve the crystal formation, but for the phosphor properties, the site structure of the Tb will be crucial. As with all such doping problems, the Tb may enter sites as isolated ions, pairs, clusters or precipitates. Each variant will offer different phosphor efficiencies. It is also equally evident in phosphor literature that no site is totally localised and independent of the neighbouring lattice structure. For a dopant level as high as 5 %, as used here in the optimal cases, there will be long range coupling between Tb as well as with the compensating structural defects of the host. Whilst this is a standard problem, it implies that there is likely to be an optimum processing time for the sintering as monitored by the TL properties. Indeed, this is apparent from Figure 2. Figure 2 displays TL response as a function of sintering time, and from this data, there is a clear maximum value of 6 h.the benefit of optimisation in the time of sintering introduces roughly a 5-fold increase in performance. Activator concentration Terbium is known to be one of the most efficient activators, even in a very small concentration. Figure 3a and b shows the absorption and emission spectra of Mg 2 SiO 4 :Tb samples prepared by sintering at 15008C for 6 h. The main emission lines of Mg 2 SO 4 :Tb are at 487 nm, 544 nm, 586 nm and 623 nm and are assigned to Tb 3þ intrinsic transitions associated with 5 D 4! 7 F 6, 5 D 4! 7 F 5, 5 D 4! 7 F 4 and 5 D 4! 7 F 3 transitions (5). Different terbium concentration will lead to the different PL intensities although emission lines of Mg 2 SO 4 :Tb are at the same wavelength and are caused by the Tb 3þ. To check out the optimised concentration for the TL response, five samples with different terbium TL OF MG 2 SIO 4 : TB WITH SYNTHESIS CONDITIONS concentration have been tested and the result is shown in Figure 4. Figure 4 shows that there is an optimum terbium concentration, which is 5 wt%. The result from the TL response is consistent with the PL intensity trend. The decrease in TL response when the terbium concentration is.5 wt % is sometimes referred as selfquenching or concentration quenching (14).Therearealternative proposals for the concentration quenching, and they may imply that the Tb has paired or clustered or merely that there are short-range energy transfers between separate Tb ions. Either, or both, conditions could reduce the luminescence efficiency via non-radiative decay paths. It is of interest to consider the concentration conditions, under which this might be expected to happen, i.e. the conditions under which the authors expect these activator ions to behave independently rather than interacting with each other. In this case of the 7 wt % Tb doping of phosphor, it is thought that some of the dopant ions stay in a separate aggregated phase resulting in the reduction of emitting centres. It is probable that with such high dopant concentrations, Tb is not in the form of isolated defects but could exist in cluster arrangement which in turn may enhance the Figure 2. Normalised TL response of Mg 2 SO 4 :Tb with different durations of sintering process. Sintering temperature is fixed as 15008C, and the terbium concentration is 5 wt %. Figure 3. (a) The emission spectrum of Mg 2 SO 4 :Tb with an excitation wavelength of 377 nm. (b) The absorption spectrum of Mg 2 SO 4 :Tb with the emission wavelength of 544 nm. 375

4 Figure 4. Normalised TL sensitivity with different Tb percentages (all the samples are produced at 15008C for 6 h). luminescence signals. Concentration quenching is not uncommon phenomenon and happens in other phosphors too. A possible model for explaining the concentration quenching has been recently proposed (15). Control of aggregation Overall, a low concentration of the Tb 3þ dopants, where they can be regarded as isolated, is orders of magnitude less than that used for this phosphor. With the concentrations used here, the Tb 3þ ions are close enough to form a resonant energy transfer net. This will allow an easy energy transfer among the Tb 3þ ions because the energy transfer rate is much faster than the radiative decay rate, resulting from the exchange/ super-exchange Coulomb interaction and the small average interaction distances under the high Tb 3þ concentration. Thus, most of the excited energy states go to ground states by means of giving the energy to traps because of the shortened average distance between Tb 3þ ions and traps, leading to the concentration quenching. With the concentration of Tb 3þ ions increasing, concentration quenching appears firstly in particles that have a lot of traps, leading to a significant non-radiative cross-relaxation and resonant energy transfer as mentioned earlier. Alternative processing procedures It should be noted that further optimisation experiments should be considered as whilst the temperature regime for sintering is extremely high and likely to minimise many types of intrinsic defect, the sintered material was ground into powder after production. This will introduce many small-scale defect structures and dislocations. Future work should therefore explore the possibility that one might remove such defects generated by the grinding. Y. WANG ETAL. There is a major and intrinsic problem in that by using a 5 wt % doping level of the terbium oxide, it is impossible to know the percentages of terbium ions incorporated in isolation, pairs, clusters, aggregates or even phase precipitates. At these high concentration levels, only a very small fraction of the Tb may be sufficiently isolated to contribute to the TL. Further, focusing on the percentage of atomic sites is misleading as it has been recognised for many years that point impurity sites have long range interactions, and for the TL, these will cause non-radiative emission pathways. Unfortunately, the scale of long range is considerable. For example, in a classic text by Hayes and Stoneham in 1985 (16), the luminescence of defect interactions was discussed, modelled and confirmed over.50 neighbouring shell distances. So for the current material, at a 5 % dopant level, even of truly uniformly dispersed Tb, the long range interactions significantly compromise the luminescence efficiency. The long range interaction problem has also been reviewed with many other examples (17). Luminescence quenching is equally important with dopants used for rare earth laser transitions. The ions have sometimes been introduced by ion beam implantation, but this also causes lattice defects. Unfortunately, thermal annealing of the lattice defects enabled dopant diffusion to cause pair and cluster formation. Furnace anneals thus have a limited benefit. In the case of Eudoped amorphous silica, and in crystalline sapphire, a different strategy of using pulse laser anneals was very successful. The laser heat pulse dissociated the clusters on a nanosecond timescale, but the structure then cooled at a similarly fast rate. This rapid quenching left the dissolved Eu clusters in a separated condition and raised the overall luminescence efficiency by a factor of.30 times more than that was possible with the best furnace anneals (18, 19) (and almost 900 times better than for unannealed material). Thermal anneals were partially successful but whilst the higher temperature furnace examples removed the damage sites, they allowed reclustering of the Eu ions. The relevance of considering pulse laser annealing of the ground Mg 2 SO 4 :Tb powder is immediately obvious, and one assumes that not only would it lead to a far more efficient TLD phosphor but also it might actually be achieved with a lower level of bulk Tb doping. One assumes such pulse laser techniques have not been applied to the TLD material at this stage as they fall into the expertise of different types of research group. Spectral factors Performance assessment of new dosemeters and their comparison with say LiF TLD materials are not made in terms of the number of emitted photons but instead are in terms of the signal from a photomultiplier detector and filter system, which was historically suitable for the LiF emission band. LiF has a peak emission near

5 nm, and some of the secondary doped LiF variants have a shorter wavelength peak, down to say 360 nm. Indeed, this is one reason why they appear to offer better sensitivity. Comparisons with the current Tb-doped material are therefore skewed by the fact that, as shown in Figure 3a, the Tb emits with emission lines extending out towards 700 nm. Figure 3a is an approximation of the spectrum as it shows the directly recorded data, but after correction the relative intensities of the longer wavelength signals will increase. As the normal photomultiplier response used in dosimetry falls steeply with longer wavelengths, the signals at say 500 to 600 nm will be much less efficiently detected than those at 400 nm. The signal reduction will be at least 50 %. Consequently, if the Tb dosemeter can be fabricated in a consistent manner then when it is used for applications it would be valuable to use a different low noise photomultiplier tube as this could give a further enhancement factor of at least double. This improvement factor far exceeds many of the other gains that have been achieved by multiple doping and processing steps. CONCLUSION Terbium-activated magnesium orthosilicate, Mg 2 SiO 4 :Tb, is an attractive thermoluminescence material because of its very high TL sensitivity to photon radiation and chemical stability. However, the characteristics of this phosphor essentially depend strongly on the production techniques. Key factors are the temperature and duration of sintering process for preparation of the TL material, the purity of the starting chemicals used, etc. The present paper describes attempts to optimise the TL response of this phosphor via studies of sintering temperature and duration, plus Tb concentration. Improvements are clearly apparent. This is a multi-parameter problem, so on-going improvements are certainly feasible. They are worth pursuing and not least because in some situations material has already been generated, which has fortuitously exceeded that of other TLD phosphors by 40 to 100 times, and the material can have UV dosimetry applications. FUNDING The authors thank the support of the Fundamental Research Funds for the Central Universities of China (No ) and the National Science Foundation of China (No ). REFERENCES 1. Hashizume, T., Kato, Y., Nakajima, T., Sakamoto, H., Kotera, N. and Eguchi, S. A new thermoluminescence dosemeter of high sensitivity using a magnesium silicate phosphor. Proceedings of the Symposium on Advanced TL OF MG 2 SIO 4 : TB WITH SYNTHESIS CONDITIONS Radiation Detectors Vienna, Austria, IAEA-SM143/ 11, (1971). 2. Toryu, T., Sakamoto, H., Kotera, N. and Yumada, H. Compositions dependency of thermoluminescence of new phosphors for radiation dosemetry. Proceedings of the International Conference on Luminescence Leningrad, USSR, (1973). 3. Kato, K., Antoku, S., Sawada, S. and Russell, W. J. Calibration of Mg 2 SiO 4 (Tb) thermoluminescence dosimeters for use in determining diagnostic X-doses to adult health study participants. Medi. Phys. 18, (1991). 4. Nakajima, T. Optical and thermal effects on thermoluminescence response of Mg 2 SiO 4 (Tb) and CaSO 4 (Tm) phosphors.healthphys. 23, (1972). 5. Mittani, J. C., Prokic, M. and Yukihara, E. G. Optically stimulated luminescence and thermoluminescence of terbium-activated silicates and aluminates. Radiat. Meas. 43, (2008). 6. Lakshmanan, A. R. and Vohra, K. G. Gamma radiation induced sensitization and photo-transfer in Mg 2 SiO 4 :Tb TLD phosphor. Nucl. Instr. Method. 159, (1979). 7. Bacci, C. and Furetta, C. Kinetics parameters in Mg 2 SiO 4 :Tb thermoluminescence material. J. Therm. Anal. 38, (1992). 8. Lakshmanan, A. R., Shinde, S. S. and Bhatt, R. C. Ultraviolet-induced thermoluminescence and phosphorescence in Mg 2 SiO 4 :Tb. Phys. Med. Biol. 23, (1978). 9. Molina, P., Prokic, M., Marcazzo, J. and Santiago, M. Characterization of a fiberoptic radiotherapy dosimetry probe based on Mg 2 SiO 4 :Tb. Radiat. Meas. 45, (2010). 10. Prokic, M. and Yukihara, E. G. Dosimetric characteristics of high sensitive Mg 2 SiO 4 :Tb solid TL detector. Radiat. Meas. 43, (2008). 11. Bhasin, B. D., Sasidharan, R. and Sunta, C. M. Preparation and thermoluminescent characteristics of terbium doped magnesium orthosilicate phosphor. Health Phys. 30, (1976). 12. Gokce,M.,Oguz,K.F.,Karal,T.andProkic,M.Influence of heating rate on thermoluminescence of Mg 2 SiO 4 :Tbdosimeter. J. PhysicsD. 42, (2009). 13. Ege, A., Wang, Y. and Townsend, P. D. Systematic errors in thermoluminescence. Nucl. Instr. Method. A. 576, (2007). 14. Sun, X., Huang, S., Gu, M., Zhang, J., Liu, B. and Ni, C. Luminescence properties of silicate glass doped with Dy 3þ and Tb 3þ.J.ChineseCeram.Soc.36, (2008). 15. Chen, R., Lawless, J. L. and Pagonis, V. A model for explaining the concentration quenching of thermoluminescence. Radiat. Meas. 46, (2011). 16. Hayes, W. and Stoneham, A. M. Defects and Defect Processes in Non-metallic Solids. Wiley, (1985) ISBN: Townsend, P. D., Jazmati, A. K., Karali, T., Maghrabi, M., Raymond, S. G. and Yang, B. Rare earth size effects on thermoluminescence and second harmonic generation. J Phys: Condens. Matter. 13, (2001). 18. Can, N., Townsend, P. D., Hole, D. E., Snelling, H. V., Ballesteros, J. M. and Afonso, C. N. Enhancement of luminescence by pulsed laser annealing of ion-implanted europium in sapphire and silica. J. Appl.Phys,78, (1995). 19. Townsend, P. D. and Olivares, J. Laser processing of insulator surfaces. Appl. Surf. Sci. 110, (1997). 377