physics proceedings reliability 12th annual Sponsored by Library of Congress Catalog Card No, Las Vegas, Nevada, April 2-4, 1974

Transcription

1 12th annual proceedings $ reliability physics 1974 Las Vegas, Nevada, April 2-4, 1974 Sponsored by the IEEE Electron Devices Group and the IEEE Reliability Group IEEE Catalog No. 74CH PHY Library of Congress Catalog Card No, Copyright 1974 by the Institute of Electrical and Electronics Engineers, Inc. wi*5 ' '

2 TABLE OF CONTENTS ANALYSIS TECHNIQUES Organizer and Moderator: A. Tamburrino NICHROME RESISTOR FAILURES AS STUDIED BY X-RAY PHOTOELECTRON SPECTROSCOPY (XPS or ESCA) W. E. Baitinger, N. Winograd and J. W. Amy 1 DIRECT COMPARISON OF AUGER, SIMS AND PROTON RESONANCE PROFILING FOR RELIABILITY STUDIES. W. H. Weisenberger, H. Gray, G. K. Hubler, K. L. dunning and J. Comas... 7 A FAILURE ANALYSIS TECHNIQUE FOR LOCATING THE FAIL SITE IN MOSFET (LSI) LOGIC CHIPS WITH SPUTTERED Si02 PASSIVATION A. A. Viele 16 PLASMA ETCHING PROMS AND OTHER PROBLEMS J. R. Devaney and A. M. Sheble, III 22 TECHNIQUES IN FAILURE ANA1YSIS OF MOS DEVICES J. J. Gajda 30 TECHNIQUES FOR STANDARDIZATION OF PARTICLE NOISE IN ELECTRONIC PACKAGES J. L. Angleton and 8. L. Webeter 38 PLASMA ETCHING AS APPLIED TO FAILURE ANALYSIS W. Kinzy Jones 43 SPECIALIZED SCANNING ELECTRON MICROSCOPY VOLTAGE FOR LSI FAILURE ANALYSIS CONTRAST TECHNIQUES B. Piwezyk and W. Siu 49 RELIABILITY IMPROVEMENT THROUGH PROCESS CONTROL AND COMPONENT DESIGN Organizer and Moderator: W. H. Sohroen RELIABILITY PREDICTION OF SILICON BIPOLAR TRANSISTORS BY MEANS OF NOISE MEASUREMENTS J-C Martin and G. Blasquez 54 iii

3 A MODEL FOR THE FAILURE OF BIPOLAR SILICON INTEGRATED CIRCUITS SUBJECTED TO ELECTROSTATIC DISCHARGE T. S. Speakman 60 RELIABILITY STUDY OF AN N-CHANNEL SILICON GATE FET WITH FIELD SHIELD E. 8. Anoliak, J. F. Prosser and B. R. Remis 70 RELIABILITY ASSESSMENT OF A SEMICONDUCTOR MEMORY BY DESIGN ANALYSIS D. E. Barnes and J. E. Thomas 74 RELIABILITY ASPECTS OF NICHROME FUSIBLE LINK PROMS (PROGRAMMABLE READ ONLY MEMORIES) P. Franklin and D. Burgess 82 NICHROME RESISTORS IN PROGRAMMABLE READ ONLY MEMORY INTEGRATED CIRCUITS P. H. Eisenberg and R. Bolder 87 RELIABILITY CONSIDERATIONS IN THE DESIGN AND FABRICATION OF POLYSILICON FUSIBLE LINK PROMS G. H. Parker, J. C. Cornet and W. 3. Pinter 88 HIGH CURRENT DENSITY EFFECTS Organizer and Moderator: C, Osburn SUSCEPTIBILITY OF SEMICONDUCTOR DEVICES TO THERMAL SECOND BREAKDOWN N. S. Cohn 90 A LIFE-TEST STUDY OF ELECTROMIGRATION IN MICROWAVE POWER TRANSISTORS S. Gottesfeld 94 FAILURE MECHANISMS IN GOLD AND ALUMINUM MICROWAVE POWER TRANSISTORS D. J. LaCombe and J. F. Carroll 101 MEDIAN-TIME-TO-FAILURE (MTF) OF AN L-BAND POWER TRANSISTOR UNDER RF CONDITIONS IV. E. Poole and L. G. Walshak 109 SEM EVALUATION OF METALLIZATION OF SEMICONDUCTORS J D. L. Fresh and J. W. Adolphsen 118

4 WORKSHOP ON METALLURGICAL FAILURE MODES Organiser and Moderator: E. Philofsky METALLURGICAL FAILURE MODES OF WIRE BONDS G. G. Harmon 131 PHYSICS OF ELECTROMIGRATION J. R. Black 142 DIE BOND FAILURE MODES J. E. Johnson 150 PRINCIPLES OF CORROSION S. C. Kolesar 155 METALLIZATION, METALLURGICAL EFFECTS AND BONDING Organizer and Moderator: J. Cunningham METALLIZATION CORROSION IN SILICON DEVICES BY MOISTURE-INDUCED ELECTROLYSIS H. Koelmans 168 THE EFFECTS OF PHOSPHORUS-DOPED PASSIVATION GLASS ON THE CORROSION OF ALUMINUM W. M. Paulson and R. W. Kirk 172 DETECTION BY AUGER ELECTRON SPECTROSCOPY AND REMOVAL BY OZONIZATION OF PHOTORESIST RESIDUES P. H. Holloway and D. W. Bushmire 180 SENSITIVITY OF CURRENT PULSE BURN-OUT TESTING TO THE GEOMETRY OF DEFECTS IN ALUMINUM METALLIZATION B. S. Gurev 187 ACCELERATED LIFETESTING AND FAILURE MODES OF THIN FILM W CONTACTS ON Si-Ge THERMOELECTRIC ALLOYS J. N. Sweet 196 A METALLURGICAL BASIS FOR THE NONDESTRUCTIVE WIRE-BOND PULL-TEST G. G. Barman 205 SILVER PLATED LEAD FRAMES FOR LARGE MOLDED PACKAGES P. Flaskerud and R. Mann 211

5 PACKAGING AND ENCAPSULATION; HYBRID AND PASSIVE COMPONENTS Organizer and Moderator: J. Martin FAILURE MECHANISM ON ACCELERATED AC TEST FOR HIGH VOLTAGE CAPACITORS J. Burnham and E. Wong 223 THE RELIABILITY OF EPOXY AS A DIE ATTACH IN DIGITAL AND LINEAR INTEGRATED CIRCUITS B. M. Pietruoha and E. M. Reiss 234 LEAK DETECTION OF INTEGRATED CIRCUITS AND OTHER SEMICONDUCTOR DEVICES ON MULTILAYER CIRCUIT BOARDS A. G. Stanley and C. M. Rader 239 THE ACCELERATED TESTING OF PLASTIC ENCAPSULATED SEMICONDUCTOR COMPONENTS R. W..Lawson 243 WORKSHOP ON MOS DRIFT MECHANISMS Organizers and Moderators: E. Labuda and C. N. Berglund ION INSTABILITIES IN MOS STRUCTURES R. J. Kriegler 250 INSTABILITIES IN DOUBLE DIELECTRIC STRUCTURES INTERFACE M. H. Woods INSTABILITIES 259 E. H. Nioollian 267 COMPOUND SEMICONDUCTOR AND MICROWAVE DEVICES Organizer and Moderator: G. Sahneer DEGRADATION STUDIES IN GaAs#6P<4 LIGHT-EMITTING DIODES R. H. Weissman, W. L. Snyder, G. T. Ikari and T. L. Larsen DEGRADATION OF GOLD-GERMANIUM OHMIC CONTACT TO n-gaas K, Ohata and M. Ogawa 278 RELIABILITY STUDIES OF GUNN DIODES T. B, Ramaohandran, J. 1. Beaton and E. B. Hakim 284

6 RELIABILITY OF SILICON AND GALLIUM ARSENIDE KA-BAND IMPATT DIODES P. Staeoker, W. T, Lindley, R. A. Murphy and J. P. Donnelly ELECTRON INJECTION AND TRAPPING IN PYROLYTIC A1203 R. J. Powell 298 A SEALED TWO-LEVEL METAL SYSTEM USING TUNGSTEN E. N. Fuls and D. M. Mao Arthur 299 CONTROL OF ELECTROSTATIC DISCHARGE DAMAGE TO SEMICONDUCTORS E. R. Freeman and J. R. Beall 304 vi i