Instructor: Dr. M. Razaghi. Silicon Oxidation
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1 SILICON OXIDATION Silicon Oxidation Many different kinds of thin films are used to fabricate discrete devices and integrated circuits. Including: Thermal oxides Dielectric layers Polycrystalline silicon Metal films 1
2 Schematic cross section of a metal-oxide-semiconductor field- effect transistor (MOSFET). Silicon Oxidation (Cont.) The first important thin film from the thermal oxide group is the gate oxide layer. under which a conducting channel can be formed between the source and the drain. A related layer is the field oxide. which provides isolation from other devices. Both gate and fieldoxides generally are grown by a thermal oxidation process because only thermal oxidation can provide the highest-quality oxides having the lowest interface trap densities. 2
3 Silicon Oxidation (Cont.) Oxidation content The thermal oxidation process used to form silicon dioxide (SiO 2 ). Impurity redistribution during oxidation. Material properties and thickness measurement techniques fir SiO 2 films. The silicon-silicon dioxide interface movesinto the silicon during the oxidation process. This creates a fresh interface region with surface contamination on the original silicon ending up on the oxide surface. THERMAL OXIDATION PROCESS Oxidation methods Thermal oxidation most important for silicon Electrochemical anodization(electrolytic passivation process ) Plasma enhanced chemical vapor deposition (PECVD) Thermal oxidation rarely used for GaAs because of: Poor electrical insulation Poor semiconductor Instructor: Dr. M. surface Razaghi protection 3
4 Schematic cross section of a resistance-heated oxidation furnace. THERMAL OXIDATION PROCESS Thermal Oxidation temperature is generally in the range of 900 C to 1200 C. and the typical gas now rate is about 1 L/min. The oxidation system uses microprocessorsto regulate the gas flow sequence to control the automatic insertion and removal or silicon wafers. to ramp the temperature up (i.e. to increase the furnace temperature linearly) from a low temperature to the oxidation temperature so that the wafers will not warp duce to sudden temperature change. to maintain the oxidation temperature to within ±l C and to ramp the temperature down when oxidation is completed. 4
5 Kinetics of Growth Dry oxidation: Si (Solid) + O 2 (Gas) SiO 2 (Solid) Wet oxidation: Si (Solid) + 2H 2 O (Gas) SiO 2 (Solid) + 2H 2 (Gas) The silicon-silicon dioxide interface movesinto the silicon during the oxidation process. This creates a fresh interface region with surface contamination on the original silicon ending up on the oxide surface. Growth of silicon dioxide by thermal oxidation. 5
6 Kinetics of Growth (Cont.) The basic structural unit of thermally grown silicon dioxide is a silicon atom surrounded tetrahedrallyby four oxygen. atoms. The silicon to oxygen internuclear distance is 1.6 A. and the oxygen to oxygen internuclear distance is 2.27A. Silica has several crystalline structures (e.g. quartz) and an amorphous structure. When silicon is thermally oxidized the silicon dioxide structure is amorphous. Typically. amorphous silica has a density of 2.21 gr/cm 3 compared with 2.65 gr/cm 3 for quartz. (a) Basic structural unit of silicon dioxide. (b) Two-dimensional representation of a quartz crystal lattice. (c) Two-dimensional representation of the amorphous structure of silicon dioxide. 6
7 Basic model for the thermal oxidation of silicon Linear rate constant versus temperature. 7
8 Parabolic rate constant Instructor: Dr. M. versus Razaghi temperature. Wet and dry silicon dioxide growth for <100>silicon calculated using the data from Table
9 Wet and dry silicon dioxide growth for <111>silicon calculated using the data from Table
10 Wet oxide growth at increased pressures 10
11 Thickness of silicon dioxide needed to mask boron and phosphorus diffusions as a function of diffusion time and temperature 11
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