Preprint - Mechatronics 2008, Le Grand-Bornand, France, May

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1 Potentialities of piezoresistive cantilever force sensors based on free standing thick films Hélène Debéda(*), Isabelle Dufour, Patrick Ginet, Claude Lucat University of Bordeaux 1, IMS Laboratory, 51 Cours de la Libération, Talence, France, 405 Abstract- Cantilever type structures with integrated piezoresistors for force sensing are presented in this paper. We first describe their principle and the way to increase their sensitivity. Cantilever force sensors have been fabricated with the screen-printed technique based on the sacrificial layer process. Their performances are compared with those given in the literature (silicon, ceramic or polymer types). The fabricated microstructures allow forces measurements in millinewton range. I. INTRODUCTION Sensors of strain-related mechanical quantities relying on the piezoresistive properties of metals or semiconductors are widely used in measure and control systems because of their good sensitivity and simple electronic interface. The basic structure of these sensors is a cantilever on which piezoresistors are integrated for the strain measurement. Cantilevers are mostly fabricated by silicon micromachining. However, cost-effective and simplified fabrication processes based on ceramics or polymers are an alternative solution to cover different strain measurement ranges. These different cantilever-based strain sensors are used for measuring pressure, force, weight or acceleration. In the field of force sensors, the measured forces have different ranges (from nn to N), depending on the application: tactile force, electrical contact force, gripping force [1-7]. In this paper, the potentialities of new types of cantilever piezoresistive force sensors based on free standing thick films are compared with the other existing piezoresistive cantilever force sensors (silicon, ceramic, polymer). II. PRINCIPLE OF PIEZORESISTIVE FORCE SENSORS The sensor principle is based on piezoresistive effect [8]: the applied force which strains the beam is estimated by the measurement of the electrical resistance change ( R) of the piezoresistance element located on the beam surface (fig. 1): R GF (1) R where is the elastic strain and G F the piezoresistance gauge factor. Fig. 1. Principle of piezoresistive force sensor Fig.. Dimensions of the cantilever and position of the strain gauge The figure of merit of these sensors are the gauge factor G F and the elastic strain which are desired to be maximised to increase the sensor response. The gauge factor value depends on the material constituting the piezoresistance (table 1). The analytical expression of the strain measured by a piezoresistor placed on the beam surface can be obtained using the theory of elasticity [9]: 6Fx (2) 2 E Et w where F, E, t, w and x are respectively the applied force, the Young s Modulus, the cantilever thickness and width, and the distance between the gauge and the force application point (fig. 2). Consequently, strain gauge with high gauge factor and placed at the cantilever clamped-end will be preferred to maximise the sensitivity of the sensor. The maximum strain at the cantilever clamped-end will be furthermore maximised by choosing long cantilever made of a low Young s Modulus E with small thickness t and small width w.

2 III. EXISTING PIEZORESISTIVE CANTILEVER FORCE SENSORS The characteristics and performances of different types of cantilever force sensors using piezoresistive effect have been reported in table II. The sensitivity S = R/(RF) has been calculated using equations 1 and 2. The spring constant K is given by the relation: wt K E () 4L where E, t, w and L are respectively the Young s Modulus, the cantilever thickness, width and length. The force range may result on one side (maximum value) from the maximum mechanical stress, and on the other side (minimum value) from the detection limit set by the noise level. The authors optimize mainly the dimensions (particularly t and L) to obtain a sufficient sensitivity for the desired force range. For example, Pruit et al fabricate soft cantilevers which allow a measurement range from 10nN to 1mN, while the stiffest cantilevers cover a range from 100nN to 10mN. A good choice of the materials (E and G F ) is another way to modify significantly the sensitivity and thus the range of detected forces. Johannsson et al obtain for example the same ratio G F /E (proportional to the sensitivity S for a given geometry) with SU8 cantilever and gold gauge instead of silicon cantilever and gauge. Replacement of Si by SU8 offers many advantages : in addition to the low electrical noise of Au gauge and its low cost fabrication, SU8 is chemically resistant, biocompatible and suitable for biosensing. For detection of forces in the mn range, ceramic cantilever types with thick film gauges can be attractive for two main reasons: the cost and the temperature stability (table I). Fabrication processes are standard thick film technology or LTCC technology (Low Temperature Cofired Circuits). Alternative solution to these processes is thick film technology combined with sacrificial layer process which allows the fabrication of free standing thick film layers. Details and advantages of this process are given in the next section. TABLE I CHARACTERISTICS OF STRAIN GAUGES MATERIALS [8] Material Gauge factor G F Temperature Coefficient Resistance TCR ppm/ C Temperature Coefficient of the G F TCGF ppm/ C Stability Metal sheets and films Excellent Silicon single crystals Good Thick film resistors Very good TABLE II COMPARISON OF DIFFERENT PIEZORESISTIVE CANTILEVER STRUCTURES USED FOR FORCE SENSING Ref. Cantilever type Strain gauge Dimensions S K (N/m) (N -1 Range ) Material GPa Material G F L (mm) w (mm) t ( m) [6, 200] , 28 10nN-1mN 180 doped Si 5 Silicon nN-10mN [1, 2004] 100 doped Si Min=7pN [1, 2006] doped Si mN [12, 2007] Alumina mN Al 2 O Ceramic Tape LTCC951 Dupont (Al 2O + glass) [14, 1992] Tape YSZ ESL (stabilized zirconia) [7, 2005] Polymer 150 Metal oxide (classicall y RuO 2) + glass , mN SU8 4.5 Gold [15-16, 2008] Polyimide 1.8 Gold

3

4 IV. PIEZORESISTIVE CANTILEVER FORCE SENSORS BASED ON FREE STANDING THICK FILM LAYERS A. Process The process used for the fabrication of films partially released from the substrate has been developed at the IMS Laboratory [10,11]. It is derived from the thick film technology classically used in microelectronics (fig. ) and based on thick sacrificial layers. The sacrificial layer acts as a stable mechanical support during the firing of the structural layer and is totally removed after the final thermal treatment of the sample (fig. 4). The fabrication steps of the cantilever-based force sensor are given figure 5. The sacrificial layer is a SrCO based-epoxy ink developed at the IMS Laboratory. Commercial pastes are used for the cantilever (dielectric), electrical contacts (AgPd) and strain gauges (G F = 10) fabrication. Active material (powder) Ink fabrication Screen-printing Drying Printing ink Wet layer on substrate Firing 120 C 20 mn Dried layer Component Profile 1h Peak T : 850 C Fig.. Simplified scheme of the different steps of the thick film processing Fig. 5. Fabrication steps of the cantilever force sensors B. Potentialities of these new types of mn force sensors These new types of sensors present the following advantages: - low cost fabrication - applications in harsh environments - thick film strain gauges are very competitive with metal strain gauges and semiconductors because of linearity between R/R and, symmetrical (for tensile and compressive strains), hysteresis free, stability with temperature and low TCR and TCGF (table I) - good clamped-end of the cantilever on alumina substrate (glass bonding) - microassembly with the standard thick film technology - large choice of starting materials (electrodes, resistors, cantilevers). It is also worth noticing that dimensions obtained with thick film technology (area > 100x100 m 2, 1 m < thickness < 100 m) are compatible with force sensor application in mn range (table III). substrate Sacrificial layer Structural layer Free-standing part of the structural layer Fig.4. Cantilever beam fabrication with the sacrificial layer based screen-printing process TABLE III THEORETICAL SENSITIVITIES, SPRING CONSTANTS AND FORCE RANGES FOR FREE STANDING THICK FILM CANTILEVERS Thick film Gauge factor Young s Modulus Dielectric cantilever L (mm) b (mm) t( m) Sensitivity S (N -1 ) Spring Constant Force Range (GPa) K (N/m) , mN

5 mN

6 C. Fabrication and tests The dimensions of the first fabricated cantilevers are summarized in table IV. The gauges have an area of (1.6x0.8)mm 2, corresponding to a resistance around 40k. Photographs of some fabricated cantilevers are given figure 6. These first prototypes have been tested by deflecting the tip, and measuring simultaneous the deflection and the gauge strain response R/R. The deflection is measured using an Altisurf 500 optical profilometer (fig. 7). TABLE IV DIMENSIONS OF FABRICATED CANTILEVERS Cantilever n Length L (mm) Width w (mm) Thickness t ( m) Relative change in resistance (ppm) cantilever n 2 cantilever n Tip deflection ( m) Fig. 8 : Piezoresistor s relative change measured for different tip deflections. For the cantilevers dimensions, see table IV. Thanks to these measurements, the gauge factor G f has been calculated using equations (1), (2) and (4). Values of G f are of around 6. They are smaller than the values given by the ink manufacturer ESL (G f 10). Differences can be attributed to our measurements (tip deflection, cantilever dimensions), but also in our fabrication process : the gauge strain and the dielectric layer are co-fired, what enhances diffusions between the layers and thus modify the material properties. Fig. 6. Photograph of three cantilevers of different size V. CONCLUSION New type of cantilever force sensors using piezoresistive effect have been fabricated for the detection of force in the mn range. The new fabrication process is derived from the thick film technology and the sacrificial layer process. With first prototypes based on a dielectric thick film cantilever, a 50 m tip deflection of a 10x2.5x0.06mm cantilever, corresponding roughly to a calculated force of 1mN, led to a strain response R/R 0.05%. Performances of these sensors have been compared to other existing cantilevers. The main advantages are: the low cost fabrication, temperature stability and choice of cantilever materials of different stiffness. In the future, these cantilever sensors will be fabricated and characterized in static and dynamic mode. Fig. 7. Experimental set up for the deflection measurement The applied force corresponding to the tip deflection has been calculated using (4), by assuming that the cantilever Young Modulus is 150GPa. 4L F (4) Ewt An example of measurements is given figure 8. During the measurements, the corresponding applied forces are in the range [4-0mN] for cantilever n 1 and [2-40mN] for the cantilever n 2 (table IV). REFERENCES [1] K. Domanski et al, Design, fabrication and characterization of force sensors for nanorobot, Microelectronic engineering, 78-79, 2005, [2] E. Peiner et al, Microforce sensor with piezoresistive amorphous carbon strain gauge, Sensors and Actuators A, 10-11, 2006 [] A. Wisitsoraat et al., Low cost thin film based piezoresistive MEMS tactile force, Sensors and Actuators A, 19, 2007 [4] P. Ruther et al., Novel D piezoresistive silicon force sensor for dimensional metrology of microcomponents Sensors IEEE, 2005, Oct [5] FC. Duval et al, Characterization of PZT thin film microactuators using a silicon micro force sensor, Sensors and Actuators A, 1, 2007 [6] B.L. Pruit et al., Piezoresistive cantilevers and measurement system for characterizing low force electrical contacts, Sensors and actuators A 104 (200), [7] A. Johansson et al, SU-8 cantilever sensor system with integrated readout, Sensors and Actuators A, , 2005

7 [8] M. Prudenziati, Thick film sensors, Handbook of sensors and actuators 1, 1994, ed. Elsevier Science BV, Amsterdam [9] S.P. Timoshenko, Strength of Materials, D. Van Nostran Company, Princeton, 1941 [10] C. Lucat et al, Production of multilayer microcomponents by the sacrificial thick layer method, CNRS Patent WO , [11] C. Lucat et al, New Sacrificial Layer Based Screen-Printing Process for Free-Standing Thick-Films Applied to MEMS, International Journal of microelectronic and electronic packaging, 4, 86-92, 2007 [12] H. Birol et al, Structuration and fabrication of sensors based on LTCC (Low Temperature Co-fired Ceramic) Technology, Key Engineering Materials Vols. 6-8, pp , 2007 [1] M.Gel et al, Force sensing submicrometer thick cantilever with ultra thin piezoresistors by rapid thermal diffusion, Journal of Micromechanics and Microengineering, 14, , 2004 [14] S.M.Chitale et al., Piezoresistivity in high GF thick film resistors : sensor design and very thin YSZ substrates, International Microelectronics Conference Yokohama, June -5, 1992 [15] R.H. Ibbotson et al., Polyimide microcantilever surface stress sensor using low-cost, rapidly-interchangeable, spring-loaded microprobe connections, in press Microelectronic Engineering, 2008 [16] R.H. Ibbotson, private communication, March 2008

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