3.46 OPTICAL AND OPTOELECTRONIC MATERIALS

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1 Badgap Engineering: Precise Control of Emission Wavelength Wavelength Division Multiplexing Fiber Transmission Window Optical Amplification Spectrum Design and Fabrication of emitters and detectors Composition Binary, Ternay, Quaternary (alloy) semiconductors Quantum size effect Superlattices, Quantum wells, Quantum wires, Quantum dots Strain effect Lattice mismatch and thermal mismatch Case studies 1. Emitters 2. EDFA pump light sources 3. Detectors 1

2 Figure 1 Absorption spectrum of optical fibers Light Sources 0.7eV< E g < 1eV for networks 1eV< Eg < 2eV for interconnects 2

3 Figure 2 Bandgap engineering 1 Alloy composition 1. Bowing parameter Alloy E g does not follow Vegard s law (linear) 2. Substrates Alloys lattice matched to GaAs and InP cover the desired E g range 3

4 Figure 4 Lattice-matched InGaAsP on InP for 1.55 and 1.31 m laser diode. 4

5 Figure 5 Bandgap engineering 2: Quantum Confinement Dimensions < Bohr orbit in dielectric medium Quantum size effect: E n =n 2 h 2 /8mL 2 Bandgap discontinuity : C= e1- e2 (Anderson s rule) AlGaAs/GaAs C = 0.65 G ( ) 5

6 Figure 6 Erbium Doped Fiber Amplifier (EDFA) Pump Light Sources 1. Pump light source at 980nm Shorter wavelengths: GaAs Longer wavelengths: InP 2. Ternary alloy requires strain tuning of E g Strained In 0.2 GaAs/GaAs 6

7 Figure 7 Strain and strain relaxation (dislocations) 1. Critical layer thickness In x GaAs/GaAs 2. Strained layers GaAs/GaAs MQW LDs on GaAs substrate 7

8 Figure 8 Biaxial-strained semiconductor bandgap 1. Deformation potentials Band extrema 2. Quantum confined states LH (light hole) HH (heavy hole) 8

9 Figure 9 Absorption coefficient of Ge and Si 1. Choice of detector material Monolithic integration with receiver electronics 9

10 Figure 10 Annealing effect of Ge epi on Si 1. Lattice mismatched epitaxy Misfit dislocations Threading dislocations 2. Defect reduction Morphology: low T growth Defect density: strain anneal Direct Growth Ge-on-Si Cyclic annealing allows for dislocation free mesas 550C 1 cycle 300C Deposit flat Ge epilayer directly on Si by a two-step CVD process Substrate: silicon as the universal platform Glue layers Low T, high flux, post growth heat treatment Ge SiO 2 10µm 10 cycles 10µm 10

11 Mechanism for Defect Reduction As Grown Ge on Si Threading Dislocation Density ~10 9 cm -2 Normalized Dislocation Velocity (a.u) After Dislocation Annihilation Anneal Threading Dislocation Density = cm Temperature, T L (C) Silicon Microphotonics, Massachusetts Institute of Technology E V CTE T exp a kt 11

12 Effect of lattice strain in Ge layer grown on Si Bandgap change absorption property Possible strain Compressive: lattice mismatch Lattice constant: Ge 5.66 Å > Si 5.43 Å Tensile: thermal mismatch Expansion coefficient: Ge 5.9x10-6 K -1 > Si 2.6x10-6 K -1 Thermal expansion mismatch - Bi-metal effect Room temp. Equilibrium at high temp. Thermal expansion coefficient: Ge > Si Tensile strain in Ge Figure 11 Annealing effect of Ge on Si 12

13 XRD: 0.20% % Figure 12 Theoretical estimation of lattice strain in Ge and Ge band structure. 13

14 Figure 13 Deformation potential calculation for enhanced long wavelength absorption coefficient 30 mev bandgap shrinkage and L-band optical wavelength detection Extended Response of Ge-on-Si Strained Epitaxial Layers Ge Band Structure Tensile strain shifts light hole band up in energy with respect to heavy hole band, reducing direct band gap Absorption Coefficient (cm -1 ) Eg Γ (lh) (ev) Bulk Ge Bulk Ge Ge/Si Ge/Si/C54-TiSi 2 C-band In plane strain (%) Wavelength(nm) Wavelength (nm) L-band Ge/Si (MIT) Strained Ge layers show absorption spectrum red shift of ~30 nm. Cannon, Jongthammanurak, Liu, MIT 15 14

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