Lecture 10: MultiUser MEMS Process (MUMPS)
|
|
- Tyrone Boone
- 6 years ago
- Views:
Transcription
1 MEMS: Fabrication Lecture 10: MultiUser MEMS Process (MUMPS) Prasanna S. Gandhi Assistant Professor, Department of Mechanical Engineering, Indian Institute of Technology, Bombay, 1
2 Recap Various VLSI based fabrication processes and details Some design fundamentals Sensors and actuators for MEMS 2
3 Today Pressure sensor: full fabrication animation MUMPS Details of PolyMUMPs process Design rules Ledit software to develop your device by polymumps process Examples of the devices made by polymumps 3
4 Fabrication steps for a piezoresistive gauge or differential, bulk micromachined pressure sensor Metal Insulator n-type epitaxial layer p-type diffusion p-type substrate Silicon nitride Glass 4: Electrochemical 3: Deposit 1: Deposit and etch pattern Insulator of backside material cavity 5: 2: Anodic Diffuse Glass piezoresistors bonding 4
5 Capactive bulk micromachined accelerometer Mass Hinge Silicon 4: Remove second masking layer ; 3: 1: Remove Etch recess first cavities masking in layer; silicon Anisotropic etch silicon 2: Deposit Anisotropic and pattern etch silicon 3 masking layers; Anisotropic etch silicon 5
6 Pressure sensor with diffused piezoresistive sense elements 6
7 Figure 4.7 A miniature silicon fusion bonded absolute pressure sensor. 7
8 MUMPs Process Multi User MEMS process Company MEMSCAP: offers PolyMUMPS, MetalMUMPS, and SOIMUMPS Developed at BSAC (Berkeley Sensors and Actuators Center) in late 80 s We will study PolyMUMPs a 3 level polysilicon micromachining process 8
9 Cleaned Silicon Wafer 9
10 Doping of Phosphorous on silicon wafer Using Standard diffusion furnace using POCL3 as Dopant source Prevent charge feed through to substrate from electrostatic devices on the surface 10
11 Deposition of Silicon Nitride layer of thickness 600nm Using Standard LPCVD (Low Pressure Chemical Vapor deposition) Acts as insulation layer 11
12 Deposition of polysilicon film Thickness 500nm Poly0 layer Using Standard LPCVD (Low Pressure Chemical Vapor deposition) 12
13 Deposition of Photo resist Thickness 500nm Spin Coating method Poly0 layer Photo resist layer 13
14 Mask Masking process Thickness 500nm UV Source and Mask Poly0 layer Photoresist layer 14
15 Mask Masking and Exposure with UV source followed with development of photoresist Thickness 500nm Poly0 layer Photoresist layer 15
16 Etching of poly0 layer Thickness 500nm Reactive Ion Etching (RIE) Poly0 layer After etching photoresist is stripped in solvent bath 16
17 Deposition of PSG (Phosphosilicate Glass) layer Thickness 2 µm Poly0 layer PSG layer (1 st Oxide) LPCVD process is used to deposit PSG (1 st Oxide Layer) layer this is first sacrificial layer 17
18 Lithographic patterning of DIMPLE Depth 750 nm Dimples Poly0 layer PSG layer (1 st Oxide) Wafer is coated with photoresist and second level (DIMPLE) is lithographically patterned. Dimples are reactive ion etched. After etching photoresist is stripped 18
19 Lithographic patterning of ANCHOR1 Dimples Anchor 1 Etch Poly0 layer PSG layer (1 st Oxide) Wafer is coated with photoresist and second level (ANCHOR1) is lithographically patterned. Anchor1 is reactive ion etched. After etching photoresist is stripped 19
20 Deposition of POLY1 Layer along with PSG hard mask PSG Mask Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 20
21 Lithographic patterning of POLY1 layer 2 nd Oxide Layer Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Wafers are recoated with photoresist and third level (Poly1) is lithographically patterned. PSG is first etched to create a hard mask and then poly1 is etched by RIE after etching photoresist and PSG mask are removed 21
22 Deposition of 2 nd oxide layer 2 nd Oxide Layer Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Second oxide layer 0.75 µm of PSG is deposited on water. This layer is patterned twice to allow contact to both poly1 and substrate layers. 22
23 Lithographic patterning of P1_P2_Via Etch P1-P2 Via Etch P1-P2 Via Etch Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Wafer is coated with photoresist and fifth level (POLY1_POL2_VIA) is lithographically patterned. Unwanted second oxide is etched in RIE, stopping on POLY1 and photoresist is stripped 23
24 Lithographic patterning of using ANCHOR2 Etch Anchor 2 Etch Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Wafer is coated with photoresist and sixth level (ANCHOR2) is lithographically patterned. Second and first oxide are etched in RIE, stopping on either POLY0 or Nitride and photoresist is stripped 24
25 PSG Mask Deposition of polysilicon and PSG hard mask dopping process Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Poly2 Layer A 1.5 µm undoped polysilicon layer is deposited followed by 200 nm PSG hard mask layer. The wafers are annealed at C for one hr and dope the polysilicon and reduce residual stress 25
26 Lithographic patterning of POLY2 Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Poly2 Layer Wafer is coated with photoresist and seventh level (POLY2) is lithographically patterned. PSG hard mask and Poly2 layers are etched in RIE, 26
27 Deposition of Metal Layer Metal Layer Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Poly2 Layer Metal Layer Wafer is coated with photoresist and eighth level (METAL) is lithographically patterned. Metal (gold with this adhesion layer) is deposited by lift off patterning. 27
28 Releasing a structure Metal Layer Poly0 layer PSG layer (1 st Oxide) Poly1 Layer 2 nd Oxide layer Poly2 Layer Metal Layer The structure are released by immersing the chip in 49 % HF solution. POLY! rotor and POLY2 hub are relesed. 28
29 MUMPs Process Software Ledit for developing your own designs: Demo Some designs in the software How they look like after fabrication!! 29
30 Design I Poly0 Anchor1 Poly1 Poly1-Poly2 via Poly2 Metal 30
31 MUMPs Designs and Products Comb actuators by PolyMUMPS Ackn: University of Colorado, Boulder. Hrishikesh Panchwagh 31
32 32
33 33
34 34
4/10/2012. Introduction to Microfabrication. Fabrication
Introduction to Microfabrication Fabrication 1 MEMS Fabrication Flow Basic Process Flow in Micromachining Nadim Maluf, An introduction to Microelectromechanical Systems Engineering 2 Thin Film Deposition
More informationMEMS II: January 23. Lab 1: Pop-up mirror - PolyMUMPS - Thermal actuators - Mirror CoventorWare
MEMS II: January 23 Lab 1: Pop-up mirror - PolyMUMPS - Thermal actuators - Mirror CoventorWare Microelectromechanical Systems (MEMS) Multi-User MEMS Processes (MUMPS) Example Design Anchor hole 2.0 0.5
More informationSurface micromachining and Process flow part 1
Surface micromachining and Process flow part 1 Identify the basic steps of a generic surface micromachining process Identify the critical requirements needed to create a MEMS using surface micromachining
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 10: Surface
More informationRegents of the University of California 1
Electroplating: Metal MEMS Nickel Surface-Micromachining Process Flow Photoresist Wafer Release Etchant Use electroplating to obtain metal μstructures When thick: call it LIGA Pros: fast low temp deposition,
More informationRegents of the University of California
Topography Issues Degradation of lithographic resolution PR step coverage, streaking Thickness differences pose problems for reduction steppers Direction of Spin PR PR PR Stringers Problematic when using
More informationToday s Class. Materials for MEMS
Lecture 2: VLSI-based Fabrication for MEMS: Fundamentals Prasanna S. Gandhi Assistant Professor, Department of Mechanical Engineering, Indian Institute of Technology, Bombay, Recap: Last Class What is
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 10: Bulk
More informationLecture 8-1 MCNC/MUMPS Process
F. G. Tseng Fall/2016, 8-1, p1 Lecture 8-1 MCNC/MUMPS Process!! MCNC/MUMPS structure Layers provided: 7.0 µm Cr/Au=0.5 poly2=1.5 ox2=0.5 poly1=2.0 ox1=2.0 Poly0=0.5 Nitride=0.5 MUMPS Cross section with
More informationMicro-Scale Engineering I Microelectromechanical Systems (MEMS) Y. C. Lee
Micro-Scale Engineering I Microelectromechanical Systems (MEMS) Y. C. Lee Department of Mechanical Engineering University of Colorado Boulder, CO 80309-0427 leeyc@colorado.edu September 2, 2008 1 Three
More informationLecture 5. SOI Micromachining. SOI MUMPs. SOI Micromachining. Silicon-on-Insulator Microstructures. Agenda:
EEL6935 Advanced MEMS (Spring 2005) Instructor: Dr. Huikai Xie SOI Micromachining Agenda: SOI Micromachining SOI MUMPs Multi-level structures Lecture 5 Silicon-on-Insulator Microstructures Single-crystal
More informationSurface Micromachining
Surface Micromachining Outline Introduction Material often used in surface micromachining Material selection criteria in surface micromachining Case study: Fabrication of electrostatic motor Major issues
More informationCambridge University Press A Guide to Hands-on MEMS Design and Prototyping Joel A. Kubby Excerpt More information.
1 Introduction 1.1 Overview of MEMS fabrication Microelectromechanical systems (MEMS) fabrication developed out of the thin-film processes first used for semiconductor fabrication. To understand the unique
More informationSOIMUMPs Design Handbook
SOIMUMPs Design Handbook a MUMPs process C. J. Han, Allen Cowen, Greg Hames and Busbee Hardy MEMScAP Revision 3.0 Copyright 2002 by MEMScAP. All rights reserved. Permission to use and copy for internal,
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2011
Lecture Outline EE C245 ME C218 Introduction to MEMS Design Fall 2011 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720
More informationDr. Lynn Fuller Webpage:
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Microelectromechanical Systems (MEMs) Process Integration Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee 82 Lomb Memorial Drive Rochester,
More informationWelcome MNT Conference 1 Albuquerque, NM - May 2010
Welcome MNT Conference 1 Albuquerque, NM - May 2010 Introduction to Design Outline What is MEMs Design General Considerations Application Packaging Process Flow What s available Sandia SUMMiT Overview
More informationFabrication Technology, Part II
EEL5225: Principles of MEMS Transducers (Fall 2003) Fabrication Technology, Part II Agenda: Process Examples TI Micromirror fabrication process SCREAM CMOS-MEMS processes Wafer Bonding LIGA Reading: Senturia,
More informationMostafa Soliman, Ph.D. May 5 th 2014
Mostafa Soliman, Ph.D. May 5 th 2014 Mostafa Soliman, Ph.D. 1 Basic MEMS Processes Front-End Processes Back-End Processes 2 Mostafa Soliman, Ph.D. Wafers Deposition Lithography Etch Chips 1- Si Substrate
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 9/13/2007 Fabrication Technology Lecture 1 Silicon Device Fabrication Technology Over 10 15 transistors (or 100,000 for every person in the world)
More informationLecture 5: Micromachining
MEMS: Fabrication Lecture 5: Micromachining Prasanna S. Gandhi Assistant Professor, Department of Mechanical Engineering, Indian Institute of Technology, Bombay, Recap: Last Class E-beam lithography X-ray
More informationChapter 3 Silicon Device Fabrication Technology
Chapter 3 Silicon Device Fabrication Technology Over 10 15 transistors (or 100,000 for every person in the world) are manufactured every year. VLSI (Very Large Scale Integration) ULSI (Ultra Large Scale
More informationLecture 3: Integrated Processes
Lecture 3: Integrated Processes Single-Crystal Silicon Process Integration Polysilicon Micromachining Process Integrated CMOS Micromachining Process ENE 5400, Spring 2004 1 Single Crystal Silicon ENE 5400,
More informationProceedings Post Fabrication Processing of Foundry MEMS Structures Exhibiting Large, Out-of-Plane Deflections
Proceedings Post Fabrication Processing of Foundry MEMS Structures Exhibiting Large, Out-of-Plane Deflections LaVern Starman 1, *, John Walton 1, Harris Hall 1 and Robert Lake 2 1 Sensors Directorate,
More information6.777J/2.732J Design and Fabrication of Microelectromechanical Devices Spring Term Solution to Problem Set 2 (16 pts)
6.777J/2.732J Design and Fabrication of Microelectromechanical Devices Spring Term 2007 By Brian Taff (Adapted from work by Feras Eid) Solution to Problem Set 2 (16 pts) Issued: Lecture 4 Due: Lecture
More informationPiezoMUMPs Design Handbook
PiezoMUMPs Design Handbook a MUMPs process Allen Cowen, Greg Hames, Konstantin Glukh, and Busbee Hardy MEMSCAP Inc. Revision 1.3 Copyright 2014 by MEMSCAP Inc.,. All rights reserved. Permission to use
More information9/4/2008 GMU, ECE 680 Physical VLSI Design
ECE680: Physical VLSI Design Chapter II CMOS Manufacturing Process 1 Dual-Well Trench-Isolated CMOS Process gate-oxide TiSi 2 AlCu Tungsten SiO 2 p-well poly n-well SiO 2 n+ p-epi p+ p+ 2 Schematic Layout
More informationManufacturing Technologies for MEMS and SMART SENSORS
4 Manufacturing Technologies for MEMS and SMART SENSORS Dr. H. K. Verma Distinguished Professor (EEE) Sharda University, Greater Noida (Formerly: Deputy Director and Professor of Instrumentation Indian
More informationIsolation Technology. Dr. Lynn Fuller
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Isolation Technology Dr. Lynn Fuller Motorola Professor 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041
More informationMEMS Surface Fabrication
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING MEMS Surface Fabrication Dr. Lynn Fuller webpage: http://people.rit.edu/lffeee Electrical and Microelectronic Engineering Rochester Institute
More informationMikrosensorer. Microfabrication 1
Mikrosensorer Microfabrication 1 Literature Introductory MEMS Fabrication and Applications Thomas M. Adams and Richard A. Layton Available as ebook on http://www.lub.lu.se/en/search/lubsearch.html This
More informationEE C247B ME C218 Introduction to MEMS Design Spring 2015
EE C247B ME C218 Introduction to MEMS Design Spring 2015 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE
More informationSurface Micromachining
Surface Micromachining Micro Actuators, Sensors, Systems Group University of Illinois at Urbana-Champaign Outline Definition of surface micromachining Most common surface micromachining materials - polysilicon
More informationINF5490 RF MEMS. LN02: MEMS Fabrication. Spring 2012, Oddvar Søråsen Department of Informatics, UoO
INF5490 RF MEMS LN02: MEMS Fabrication Spring 2012, Oddvar Søråsen Department of Informatics, UoO 1 Micromachining Today s lecture Important process steps General Summary: MEMS-specific steps Examples
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2011
EE C245 ME C218 Introduction to MEMS Design Fall 2011 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE C245:
More informationEE C247B ME C218 Introduction to MEMS Design Spring 2014
EE C247B ME C218 Introduction to MEMS Design Spring 2014 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture EE
More informationPHYS 534 (Fall 2008) Process Integration OUTLINE. Examples of PROCESS FLOW SEQUENCES. >Surface-Micromachined Beam
PHYS 534 (Fall 2008) Process Integration Srikar Vengallatore, McGill University 1 OUTLINE Examples of PROCESS FLOW SEQUENCES >Semiconductor diode >Surface-Micromachined Beam Critical Issues in Process
More informationEE C245 ME C218 Introduction to MEMS Design Fall 2007
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 9: Surface
More informationEE 5344 Introduction to MEMS. CHAPTER 3 Conventional Si Processing
3. Conventional licon Processing Micromachining, Microfabrication. EE 5344 Introduction to MEMS CHAPTER 3 Conventional Processing Why silicon? Abundant, cheap, easy to process. licon planar Integrated
More informationIntroduction to Microeletromechanical Systems (MEMS) Lecture 5 Topics. JDS Uniphase MUMPs
Introduction to Microeletromechanical Systems (MEMS) Lecture 5 Topics JDS Uniphase MUMPS Foundry Process and Devices Foundry Process Sequence Design Rules and Process Interactions Examples CMOS for MEMS
More informationChapter 2 OVERVIEW OF MEMS
6 Chapter 2 OVERVIEW OF MEMS 2.1 MEMS and Microsystems The term MEMS is an abbreviation of microelectromechanical system. MEMS contains components ofsizes in 1 micrometer to 1 millimeter. The core element
More informationSensors and Actuators Designed and Fabricated in a. Micro-Electro-Mechanical-Systems (MEMS) Course. Using Standard MEMS Processes
Sensors and Actuators Designed and Fabricated in a Micro-Electro-Mechanical-Systems (MEMS) Course Using Standard MEMS Processes M.G. Guvench University of Southern Maine guvench@maine.edu Abstract Use
More informationSURFACE MICROMACHINING
SURFACE MICROMACHINING Features are built up, layer by layer on the surface of a substrate. Surface micromachined devices are much smaller than bulk micromachined components. Nature of deposition process
More informationLecture #18 Fabrication OUTLINE
Transistors on a Chip Lecture #18 Fabrication OUTLINE IC Fabrication Technology Introduction the task at hand Doping Oxidation Thin-film deposition Lithography Etch Lithography trends Plasma processing
More informationIntroduction to CMOS VLSI Design. Layout, Fabrication, and Elementary Logic Design
Introduction to CMOS VLSI Design Layout, Fabrication, and Elementary Logic Design CMOS Fabrication CMOS transistors are fabricated on silicon wafer Lithography process similar to printing press On each
More informationCTN 10/1/09. EE 245: Introduction to MEMS Lecture 11: Bulk Micromachining. Copyright 2009 Regents of the University of California
MUMPS: MultiUser MEMS ProcesS Foundry MEMS: The MUMPS Process Originally created by the Microelectronics Center of North Carolina (MCNC) now owned by MEMSCAP in France Three-level polysilicon surface micromachining
More informationLecture 0: Introduction
Lecture 0: Introduction Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor Fast, cheap, low power
More informationFABRICATION PROCESSES FOR MAGNETIC MICROACTUATORS WITH POLYSILICON FLEXURES. Jack W. Judy and Richard S. Muller
FABRICATION PROCESSES FOR MAGNETIC MICROACTUATORS WITH POLYSILICON FLEXURES Jack W. Judy and Richard S. Muller Berkeley Sensor & Actuator Center (BSAC) Department of EECS, University of California, Berkeley,
More informationIC/MEMS Fabrication - Outline. Fabrication
IC/MEMS Fabrication - Outline Fabrication overview Materials Wafer fabrication The Cycle: Deposition Lithography Etching Fabrication IC Fabrication Deposition Spin Casting PVD physical vapor deposition
More informationPROCESS FLOW AN INSIGHT INTO CMOS FABRICATION PROCESS
Contents: VI Sem ECE 06EC63: Analog and Mixed Mode VLSI Design PROCESS FLOW AN INSIGHT INTO CMOS FABRICATION PROCESS 1. Introduction 2. CMOS Fabrication 3. Simplified View of Fabrication Process 3.1 Alternative
More informationEE 330 Lecture 9. IC Fabrication Technology Part II. -Oxidation -Epitaxy -Polysilicon -Planarization -Resistance and Capacitance in Interconnects
EE 330 Lecture 9 IC Fabrication Technology Part II -Oxidation -Epitaxy -Polysilicon -Planarization -Resistance and Capacitance in Interconnects Review from Last Time IC Fabrication Technology Crystal Preparation
More informationThis Appendix discusses the main IC fabrication processes.
IC Fabrication B B.1 Introduction This Appendix discusses the main IC fabrication processes. B.2 NMOS fabrication NMOS transistors are formed in a p-type substrate. The NMOS fabrication process requires
More informationIntegrated Processes. Lecture Outline
Integrated Processes Thara Srinivasan Lecture 14 Picture credit: Lemkin et al. Lecture Outline From reader Bustillo, J. et al., Surface micromachining of MEMS, pp. 1556-9. A.E. Franke et al., Polycrystalline
More informationCMOS FABRICATION. n WELL PROCESS
CMOS FABRICATION n WELL PROCESS Step 1: Si Substrate Start with p- type substrate p substrate Step 2: Oxidation Exposing to high-purity oxygen and hydrogen at approx. 1000 o C in oxidation furnace SiO
More information3.155J / 6.152J Micro/Nano Processing Technology TAKE-HOME QUIZ FALL TERM 2005
3.155J / 6.152J Micro/Nano Processing Technology TAKE-HOME QUIZ FALL TERM 2005 1) This is an open book, take-home quiz. You are not to consult with other class members or anyone else. You may discuss the
More informationChapter 2 Problems. The CMOS technology we need to realize is shown below, from Figure 1-34 in the text. S P + N P + N WELL P +
Chapter 2 roblems 2.1 Sketch a process flow that would result in the structure shown in Figure 1-34 by drawing a series of drawings similar to those in this chapter. You only need to describe the flow
More informationL5: Micromachining processes 1/7 01/22/02
97.577 L5: Micromachining processes 1/7 01/22/02 5: Micromachining technology Top-down approaches to building large (relative to an atom or even a transistor) structures. 5.1 Bulk Micromachining A bulk
More informationChapter 3 CMOS processing technology
Chapter 3 CMOS processing technology (How to make a CMOS?) Si + impurity acceptors(p-type) donors (n-type) p-type + n-type => pn junction (I-V) 3.1.1 (Wafer) Wafer = A disk of silicon (0.25 mm - 1 mm thick),
More informationMicroelectronics. Integrated circuits. Introduction to the IC technology M.Rencz 11 September, Expected decrease in line width
Microelectronics Introduction to the IC technology M.Rencz 11 September, 2002 9/16/02 1/37 Integrated circuits Development is controlled by the roadmaps. Self-fulfilling predictions for the tendencies
More informationRegents of the University of California
Surface-Micromachining Process Flow Photoresist Sacrificial Oxide Structural Polysilcon Deposit sacrificial PSG: Target = 2 m 1 hr. 40 min. LPCVD @450 o C Densify the PSG Anneal @950 o C for 30 min. Lithography
More informationSolid State Sensors. Microfabrication 8/22/08 and 8/25/08
Solid State Sensors Microfabrication 8/22/08 and 8/25/08 Purpose of This Material To introduce the student to microfabrication techniques as used to fabricate MEMS Sensors Understand concepts not specifics
More informationUT Austin, ECE Department VLSI Design 2. CMOS Fabrication, Layout Rules
2. CMOS Fabrication, Layout, Design Rules Last module: Introduction to the course How a transistor works CMOS transistors This module: CMOS Fabrication Design Rules CMOS Fabrication CMOS transistors are
More informationPolyMUMPs FAQ, v2.0. a MUMPs process MEMSCAP. Revision 2.0
PolyMUMPs FAQ a MUMPs process MEMSCAP Revision 2.0 1 Copyright 2004 by MEMSCAP. All rights reserved. Permission to use and copy for internal, noncommercial purposes is hereby granted. Any distribution
More informationPETER PAZMANY CATHOLIC UNIVERSITY Consortium members SEMMELWEIS UNIVERSITY, DIALOG CAMPUS PUBLISHER
PETER PAZMANY CATHOLIC UNIVERSITY SEMMELWEIS UNIVERSITY Development of Complex Curricula for Molecular Bionics and Infobionics Programs within a consortial* framework** Consortium leader PETER PAZMANY
More informationFABRICATION OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag
FABRICATION OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Overview of CMOS Fabrication Processes The CMOS Fabrication Process Flow Design Rules EE 432 VLSI Modeling and Design 2 CMOS Fabrication
More informationCMOS Fabrication. Dr. Bassam Jamil. Adopted from slides of the textbook
CMOS Fabrication Dr. Bassam Jamil Adopted from slides of the textbook CMOS Fabrication CMOS transistors are fabricated on silicon wafer Lithography process similar to printing press On each step, different
More informationEE 330 Lecture 8. IC Fabrication Technology Part II. - Oxidation - Epitaxy - Polysilicon - Interconnects
EE 330 Lecture 8 IC Fabrication Technology Part II - Oxidation - Epitaxy - Polysilicon - Interconnects Review from Last Time MOS Transistor Bulk Source Gate Drain p-channel MOSFET Lightly-doped n-type
More informationCzochralski Crystal Growth
Czochralski Crystal Growth Crystal Pulling Crystal Ingots Shaping and Polishing 300 mm wafer 1 2 Advantage of larger diameter wafers Wafer area larger Chip area larger 3 4 Large-Diameter Wafer Handling
More informationFABRICATION of MOSFETs
FABRICATION of MOSFETs CMOS fabrication sequence -p-type silicon substrate wafer -creation of n-well regions for pmos transistors, -impurity implantation into the substrate. -thick oxide is grown in the
More informationLecture 1A: Manufacturing& Layout
Introduction to CMOS VLSI Design Lecture 1A: Manufacturing& Layout David Harris Harvey Mudd College Spring 2004 Steven Levitan Fall 2008 1 The Manufacturing Process For a great tour through the IC manufacturing
More informationMEMS Fabrication. Beyond Integrated Circuits. MEMS Basic Concepts
MEMS Fabrication Beyond Integrated Circuits MEMS Basic Concepts Uses integrated circuit fabrication techniques to make mechanical as well as electrical components on a single chip. Small size 1µm 1mm Typically
More informationChapter 2 Manufacturing Process
Digital Integrated Circuits A Design Perspective Chapter 2 Manufacturing Process 1 CMOS Process 2 CMOS Process (n-well) Both NMOS and PMOS must be built in the same silicon material. PMOS in n-well NMOS
More informationThomas M. Adams Richard A. Layton. Introductory MEMS. Fabrication and Applications. Springer
Thomas M. Adams Richard A. Layton Introductory MEMS Fabrication and Applications Springer Contents Preface xiü Part I Fabrication Chapter 1: Introduction 3 1.1 What are MEMS? 3 1.2 Why MEMS? 4 1.2.1. Low
More informationSemiconductor Manufacturing Technology. IC Fabrication Process Overview
Semiconductor Manufacturing Technology Michael Quirk & Julian Serda October 00 by Prentice Hall Chapter 9 IC Fabrication Process Overview /4 Objectives After studying the material in this chapter, you
More informationCMOS Manufacturing process. Design rule set
CMOS Manufacturing process Circuit design Set of optical masks Fabrication process Circuit designer Design rule set Process engineer All material: Chap. 2 of J. Rabaey, A. Chandrakasan, B. Nikolic, Digital
More informationCS/ECE 5710/6710. N-type Transistor. N-type from the top. Diffusion Mask. Polysilicon Mask. CMOS Processing
CS/ECE 5710/6710 CMOS Processing Addison-Wesley N-type Transistor D G +Vgs + Vds S N-type from the top i electrons - Diffusion Mask Mask for just the diffused regions Top view shows patterns that make
More informationChapter 4 : ULSI Process Integration (0.18 m CMOS Process)
Chapter : ULSI Process Integration (0.8 m CMOS Process) Reference. Semiconductor Manufacturing Technology : Michael Quirk and Julian Serda (00). - (00). Semiconductor Physics and Devices- Basic Principles(/e)
More informationEE 143 FINAL EXAM NAME C. Nguyen May 10, Signature:
INSTRUCTIONS Read all of the instructions and all of the questions before beginning the exam. There are 5 problems on this Final Exam, totaling 143 points. The tentative credit for each part is given to
More informationChapter 2. Density 2.65 g/cm 3 Melting point Young s modulus Tensile strength Thermal conductivity Dielectric constant 3.
Chapter 2 Thin Film Materials Thin films of Silicon dioxide, Silicon nitride and Polysilicon have been utilized in the fabrication of absolute micro pressure sensor. These materials are studied and discussed
More informationLecture 7 CMOS MEMS. CMOS MEMS Processes. CMOS MEMS Processes. Why CMOS-MEMS? Agenda: CMOS MEMS: Fabrication. MEMS structures can be made
EEL6935 Advanced MEMS (Spring 2005) Instructor: Dr. Huikai Xie CMOS MEMS Agenda: Lecture 7 CMOS MEMS: Fabrication Pre-CMOS Intra-CMOS Post-CMOS Deposition Etching Why CMOS-MEMS? Smart on-chip CMOS circuitry
More informationPreface Preface to First Edition
Contents Foreword Preface Preface to First Edition xiii xv xix CHAPTER 1 MEMS: A Technology from Lilliput 1 The Promise of Technology 1 What Are MEMS or MST? 2 What Is Micromachining? 3 Applications and
More informationME 189 Microsystems Design and Manufacture. Chapter 9. Micromanufacturing
ME 189 Microsystems Design and Manufacture Chapter 9 Micromanufacturing This chapter will offer an overview of the application of the various fabrication techniques described in Chapter 8 in the manufacturing
More informationMicro-Electro-Mechanical Systems (MEMS) Fabrication. Special Process Modules for MEMS. Principle of Sensing and Actuation
Micro-Electro-Mechanical Systems (MEMS) Fabrication Fabrication Considerations Stress-Strain, Thin-film Stress, Stiction Special Process Modules for MEMS Bonding, Cavity Sealing, Deep RIE, Spatial forming
More informationCMOS Technology. Flow varies with process types & company. Start with substrate selection. N-Well CMOS Twin-Well CMOS STI
CMOS Technology Flow varies with process types & company N-Well CMOS Twin-Well CMOS STI Start with substrate selection Type: n or p Doping level, resistivity Orientation, 100, or 101, etc Other parameters
More informationECE321 Electronics I
ECE321 Electronics I Lecture 19: CMOS Fabrication Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: payman@ece.unm.edu Slide: 1 Miller Effect Interconnect
More informationMechanical Engineering and Applied Mechanics University of Pennsylvania. A glimpse of MEMS. Presented to MEAM 550 (Fall 2001) students
Mechanical Engineering and Applied Mechanics University of Pennsylvania A glimpse of MEMS Presented to MEAM 550 (Fall 2001) students G. K. Ananthasuresh September 17, 2001 What s in a name? Micro-Electro-Mechanical
More informationNanoelectronics Fabrication Facility
Nanoelectronics Fabrication Facility Contents Introduction 2 Mask Making Module 4 Photolithography Module 6 Wet Etching and CMP Module 8 Dry Etching and Sputtering Module 10 Thermal Process and Implantation
More informationVLSI. Lecture 1. Jaeyong Chung System-on-Chips (SoC) Laboratory Incheon National University. Based on slides of David Money Harris
VLSI Lecture 1 Jaeyong Chung System-on-Chips (SoC) Laboratory Incheon National University Based on slides of David Money Harris Goals of This Course Learn the principles of VLSI design Learn to design
More informationVLSI INTRODUCTION P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) Department of Electronics and Communication Engineering, VBIT
VLSI INTRODUCTION P.VIDYA SAGAR ( ASSOCIATE PROFESSOR) contents UNIT I INTRODUCTION: Introduction to IC Technology MOS, PMOS, NMOS, CMOS & BiCMOS technologies. BASIC ELECTRICAL PROPERTIES : Basic Electrical
More informationCMOS VLSI Design. Introduction. All materials are from the textbook Weste and Harris, 3 rd Edition CMOS VLSI DESIGN. Introduction
CMOS VLSI Design Introduction ll materials are from the textbook Weste and Harris, 3 rd Edition CMOS VLSI DESIGN Introduction Chapter previews the entire field, subsequent chapters elaborate on specific
More informationconductor - gate insulator source gate n substrate conductor - gate insulator gate substrate n open switch closed switch however: closed however:
MOS Transistors Readings: Chapter 1 N-type drain conductor - gate insulator source gate drain source n p n substrate P-type drain conductor - gate insulator source drain gate source p p substrate n 42
More informationAn SOI Process for Fabrication. of Solar Cells, Transistors and Electrostatic Actuators. Berkeley Sensor and Actuator Center
An SOI Process for Fabrication of Solar Cells, Transistors and Electrostatic Actuators Colby L Bellew, Seth Hollar and K.S.J. Pister University of California at Berkeley Berkeley Sensor and Actuator Center
More information5.8 Diaphragm Uniaxial Optical Accelerometer
5.8 Diaphragm Uniaxial Optical Accelerometer Optical accelerometers are based on the BESOI (Bond and Etch back Silicon On Insulator) wafers, supplied by Shin-Etsu with (100) orientation, 4 diameter and
More informationMidterm evaluations. Nov. 9, J/3.155J 1
Midterm evaluations What learning activities were found most helpful Example problems, case studies (5); graphs (good for extracting useful info) (4); Good interaction (2); Good lecture notes, slides (2);
More informationMicrofabrication of Heterogeneous, Optimized Compliant Mechanisms SUNFEST 2001 Luo Chen Advisor: Professor G.K. Ananthasuresh
Microfabrication of Heterogeneous, Optimized Compliant Mechanisms SUNFEST 2001 Luo Chen Advisor: Professor G.K. Ananthasuresh Fig. 1. Single-material Heatuator with selective doping on one arm (G.K. Ananthasuresh)
More informationManufacturing Process
CMOS Manufacturing Process CMOS Process 1 A Modern CMOS Process gate-oxide TiSi AlCu Tungsten SiO n+ p-well p-epi poly n-well p+ SiO p+ Dual-Well Trench-Isolated CMOS Process Circuit Under Design V DD
More information3. Overview of Microfabrication Techniques
3. Overview of Microfabrication Techniques The Si revolution First Transistor Bell Labs (1947) Si integrated circuits Texas Instruments (~1960) Modern ICs More? Check out: http://www.pbs.org/transistor/background1/events/miraclemo.html
More informationMEMS Fabrication I : Process Flows and Bulk Micromachining
MEMS Fabrication I : Process Flows and Bulk Micromachining Dr. Thara Srinivasan Lecture 2 Picture credit: Alien Technology Lecture Outline Reading Reader is in! (at South side Copy Central) Kovacs, Bulk
More informationCMOS Manufacturing Process
CMOS Manufacturing Process CMOS Process A Modern CMOS Process gate-oxide TiSi 2 AlCu Tungsten SiO 2 n+ p-well p-epi poly n-well p+ SiO 2 p+ Dual-Well Trench-Isolated CMOS Process Circuit Under Design V
More informationECE 440 Lecture 27 : Equilibrium P-N Junctions I Class Outline:
ECE 440 Lecture 27 : Equilibrium P-N Junctions I Class Outline: Fabrication of p-n junctions Contact Potential Things you should know when you leave Key Questions What are the necessary steps to fabricate
More information