Rapid Thermal Processing (RTP) Dr. Lynn Fuller
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1 ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Rapid Thermal Processing (RTP) Dr. Lynn Fuller Webpage: 82 Lomb Memorial Drive Rochester, NY Tel (585) Fax (585) Department Webpage: lec_rtp.ppt Page 1
2 OUTLINE Introduction Equipment Processes for: Activation of Ion Implanted Impurities Rapid Thermal Processing of Dielectrics Silicidation and Contact Formation Thermoplastic Stress References Page 2
3 INTRODUCTION Rapid Thermal Processing (RTP) can be used to reduce the thermal redistribution of impurities at high temperature. For small devices this is an important consideration and as a result most engineers make use of low temperature processes. Some ion implants require high temperature (at least 1000 C) thus RTP is a promising technology. RTP was originally developed for ion implant anneal but has broadened its application to oxide growth, chemical vapor deposition, and silicidation. Page 3
4 RAPID THERMAL PROCESSING (RTP) Heat Lamps Computer Control Process Chamber Gas In Page 4
5 RAPID TEMPERATURE RISE Page 5
6 RTP SYSTEM Page 6
7 THIN GATE OXIDE GROWTH BY RAPID THERMAL PROCESSING (RTP) From Textbook by S. Wolf AG 610 at RIT Textbooks say that 150Å of oxide can be grown by RTP at 1100 C in 60 sec. Page 7
8 RTP THIN OXIDE GROWTH Poly 1.8 nm Oxide Silicon Page 8
9 RTP RECIPE Recipe for RTP Oxide, time during SS (Steady State) was changed to obtain different oxide thicknesses, 60s, 120s, 240s, and 480s Step Time (sec) Temp (C) T sw Gain Dgain Iwarm Icold Delay 10 Ramp SS SS Delay 300 Sébastien Michel, February 2005 Steve Parshall, Kazuya Tokunaga, May 2005 Page 9
10 OXIDE THICKNESS MEASUREMENTS The data shown was obtained using the 5 point 6 wafer Spectromap Time Mean Max Min STDDEV Center Pt RTP Oxide at 1000 C, Dry O The data shown was obtained using the VASE (Variable Angle Spectroscopic Ellipsometer) Time Xox n Min. A A A % A Min A Page 10
11 RTP OXIDE QUALITY MEASUREMENTS Measurements made using the SCA (Surface Charge Analyzer) Time 8 minutes 4 minutes 2 minutes 1 minute NSC 1.13E E E E+14 Qox 3.55E E E E+11 Dit 2.76E E E E+11 Qfb 4.66E E E E+11 Ts Dit is close to Bruce Furnace thermal gate oxide values Typically ~1E11 Page 11
12 ULTRA SHALLOW JUNCTION FORMATION Page 12
13 SILICIDE AND BARRIER LAYER FORMATION Silicide formation includes Ti, Pt, W, Ta, Mo, and Co. TiSi 2 is formed at 900 C in pure N 2. Titanium is sensitive to H 2 O and O 2 in the ppm levels. TiN barrier layers can be formed by reacting Ti with N 2 or NH 3 Page 13
14 ILLUMINATION UNIFORMITY AND WAFER TEMPERATURE UNIFORMITY Uniformity of temperature across the wafer is the most important parameter. Local across the wafer temperature gradients cause stress. Page 14
15 LAMP-BASED RTP Lamp based RTP systems have been the choice for the past several years. Special physical configurations have used to provide additional heat towards the outer edge of a round wafer. These systems are cold wall systems so more power is needed at the wafer edge than in the center of the wafer. Page 15
16 SUSCEPTOR BASED RTP SYSTEM In the susceptor-based, hot-wall system, heating is achieved by placing wafers in close proximity to a heated thermal mass and thereby heating the wafers with a uniform flux of relatively long wavelength radiation. In such a system, the initial temperature ramp-up rate increases with increase in process temperature. Heat-up and cool-down rates in excess of 100 C/sec. Page 16
17 TITANIUM SILICIDE FORMATION RECIPES FACTISI1.RCP (step 1 form TiSi) Delay 30 sec. Ramp 75 C/sec. To 650 C Steady State 60 sec.at 650 C Ramp 125 C/sec. To 300 C FACTISI2.RCP (step 3 form TiSi 2 ) Delay 30 sec. Ramp 75 C/sec. To 800 C Steady State 60 sec. At 800 C Ramp 125 C/sec. To 300 C Etching of Ti Metal (step 2) Heat the Sulfuric Acid:Hydrogen Peroxide (1:2) mixture on a hotplate to 100 C (set plate temperature to 150 C) Etch for 1 min 30 sec. This should remove the Ti that is on top of the silicon dioxide but not remove TiSi that was formed on the polysilicon and D/S regions. It also removes unreacted Ti metal over the TiSi on the poly and D/S regions. Page 17
18 SUMMARY Rapid thermal processing was developed to enable short time high temperature implant annealing. Generally, the wafer rests on quartz pins in a flow tube and is heated using a bank of high intensity filament lamps. Problems with RTP include temperature measurement and thermal uniformity of the wafer. Excessive temperature gradients across the wafer cause thermoplastic stress that may lead to wafer warpage and/or slip. Rapid thermal processing has been extended to include silicide and barrier metal formation, thermal oxidation, chemical vapor deposition, and epitaxial growth. Page 18
19 REFERENCES 1. The Science and Engineering of Microelectronic Fabrication, Stephen A. Campbell, Oxford University Press, Page 19
20 HOMEWORK - RTP 1. Describe the application of RTP for ion implant anneal. 2. Discuss why RTP would be good for gate oxide growth. Page 20
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