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1 Preface Program Committee Members Transistor Physics History John Bardeen and Transistor Physics p. 3 Challenges p. xiii p. xv Technology in the Internet Era p. 33 Metrology Needs and Challenges for the Semiconductor Industry p. 38 Impact of the ITRS Metrology Roadmap p. 42 Semiconductor Product Analysis Challenges Based on the 1999 ITRS p. 53 The Assembly Analytical Forum: Addressing the Analytical Challenges Facing Packaging and Assembly Front end Processes--Materials p. 57 Silicon Wafers for the Mesoscopic Era p. 67 Front end Processes--Gate Dielectrics Photoemission Study of Energy Band Alignment and Gap State Density Distribution for High-k Gate Dielectrics Challenges of Gate-Dielectric Scaling, including the Vertical Replacement-Gate MOSFET p. 89 p. 97 Electrical Characterization of Ultra-thin Oxides and High K Gate Dielectrics p. 105 Modeling Soft Breakdown Phenomenon under Constant Voltage Stress in Ultra Thin Gate p. 113 Oxides with PSpice Circuit Simulator Product Wafer Measurements of MOS Gate Dielectric Quality with a Small Diameter Elastic Probe p. 119 HRTEM Image Simulations of Structural Defects in Gate Oxides p. 125 HRTEM Image Simulations for Gate Oxide Metrology p. 130 Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: A Fundamental Difference An Examination of Tantalum Pentoxide Thin Dielectric Films Using Grazing Incidence X-ray Reflectivity and Powder Diffraction p. 134 p. 140 Gate Dielectric Thickness Metrology Using Transmission Electron Microscopy p. 144 Spectroscopic Evidence for a Network Structure in Plasma-Deposited Ta[subscript 2]O[subscript 5] Films for Microelectronic Applications Minimization of Mechanical and Chemical Strain at Dielectric-Semiconductor and Internal Dielectric Interfaces in Stacked Gate Dielectrics for Advanced CMOS Devices Characterization of Silicon-Oxynitride Dielectric Thin Films Using Grazing Incidence X-ray Photoelectron Fabrication and Electron Microprobe Characterization of Barium-Strontium-Titanate (BST) Films p. 149 p. 154 p. 159 p. 164 Non-contact Thickness and Electrical Characterization of High-k Dielectrics p. 169 Front End Processes Junction Depth Measurement Using Carrier Illumination p. 175 Novel Techniques for Data Retention and Leff Measurements in Two Bit microflash Memory p. 181 Cells Characterizing Interfacial Roughness by Light Scattering Ellipsometry p. 186

2 Directional Mass Analysis of Ozone Dissociation during Thin Oxide Formation with Highly Concentrated Ozone p. 191 TEM Analysis of 64M Flash Memory Using FIB Sample Preparation Techniques p. 196 Power Spectral Density Functions for Si Wafer Surfaces Using Six Measurement Techniques Non-contact Defect Diagnostics in Cz-Si Wafers Using Resonance Ultrasonic Vibrations Front End Processes--Electrical Characterization Quantitative Analysis of Copper Contamination in Silicon by Surface Photovoltage Minority Carrier Lifetime Analysis COCOS (Corona Oxide Characterization of Semiconductor) Non-contact Metrology for Gate Dielectrics "Gated-Diode" Configuration in SOI MOSFET's: A Sensitive Tool for Evaluating the Quality and Reliability of the Buried Si/SiO[subscript 2] Interface Front End Processes--In-Situ p. 201 p. 207 p. 215 p. 220 p. 226 Investigation and Control of Spatial Characteristics of Chamber-Cleaning Plasmas p. 233 Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges Development of an In-Line X-ray Reflectivity Technique for Metal Film Thickness Measurement p. 238 p. 243 In-Situ Sensing Using Mass Spectrometry and Its Use for Run-to-Run Control on a W-CVD p. 249 Cluster Tool ITS-90 Calibration of Radiation Thermometers for RTP Using Wire/Thin-Film Thermocouples on a Wafer Non-destructive Characterization of CMP Pads Using Scanning Ultrasonic Transmission p. 254 p. 259 Monitoring Ion Current and Ion Energy during Plasma Processing Using Radio-Frequency p. 263 Current and Voltage Measurements Fiber Optic Based Optical Tomography Sensor for Monitoring Plasma Uniformity p. 268 Contamination and Defect Analysis Chemical Contamination Control in ULSI Wafer Processing p. 275 Full Wafer Particle Defect Characterization p. 285 A Numerical/Experimental Investigation of Microcontamination in a Rotating Disk Chemical Vapor Deposition Reactor Detection of Organic Contamination on Silicon Substrates: Comparison of Several Techniques p. 292 p. 297 On Problems in Obtaining Root Cause Analysis of Al-Based Particles p. 302 PEEM Imaging and Modeling of Dopant-Concentration Variation in Si Devices p. 307 Defect Identification by Compositional Defect Review Using Auger Electron p. 312 Defect Mapping Accuracy of KLA-Tencor Surfscan 6200, 6400, and SP1 p. 317 Comparison of Size Distribution of Polystyrene Spheres Produced by Pneumatic and Electrospray Nebulization Characterization and Analysis of Microelectronic Processes Using Raman Application of Micro-Raman and Photoluminescence to Defect and Thin Film Characterization p. 322 p. 327 p. 332

3 Lithography The Status and Future of Imaging Metrology Needs for Lithography p. 339 Critical Issues in Overlay Metrology p. 346 Small-Angle Neutron Scattering Measurements for the Characterization of Lithographically Prepared Structures p. 357 New Developments in Deep Ultraviolet Laser Metrology for Photolithography p. 361 Secondary Electron Image Profiles Using Bias Voltage Technique in Deep Contact Hole p. 364 A Hybrid Analysis of Ellipsometry Data from Patterned Structures p. 373 Characterization of CCD Cameras and Optics for Dimensional Metrology p. 378 Interconnect and Back End Processing Guidelines for Selecting Multi-technology Recipes in Multilayer Filmstack Measurements Measurement of the Dielectric Constant of Thin Films Using Goniometric Time-Domain New Photo-Acoustic Techniques for Improved In-Line Control of Opaque Metal Film Processing p. 385 p. 392 p. 397 Cu Electrodeposition for On-Chip Interconnections p. 402 Characterization of BPSG Films Using Neutron Depth Profiling and Neutron/X-ray Reflectometry p. 407 Energy Dispersive X-ray Analysis Using a Microcalorimeter Detector p. 412 Polysilicon Chemical-Mechanical Polishing Process Characterization Using a Non-contact Capacitance Probe Technique Interconnect and Back End Processing--Low-K The Transition to Cu, Damascene and Low-K Dielectrics for Integrated Circuit Interconnects, Impacts on the Industry p. 416 p. 423 Mechanical Characterization of Low-K Dielectric Materials p. 431 Investigation of N[subscript 2] Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-ray Reflectivity High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples Nanoscale Elastic Imaging and Mechanical Modulus Measurements of Aluminum/Low-k Dielectric Interconnect Structures Structure and Property Characterization of Low-k Dielectric Porous Thin Films Determined by X-ray Reflectivity and Small-Angle Neutron Scattering Thin Film p. 440 p. 444 p. 449 p. 453 Semiconductor Material Applications of Rapid X-ray Reflectometry (XRR) p. 461 Recent Progress in Picosecond Ultrasonic Process Metrology p. 468 Non-contact Metal Film Metrology Using Impulsive Stimulated Thermal Scattering p. 478 Critical Analytical Techniques New Challenges for Analytical TEM in Device Characterization p. 491 Gate Dielectric Metrology Using Advanced TEM Measurements p. 500 Low Voltage Microanalysis Using Microcalorimeter EDS p. 506 Spectroscopic Ellipsometry from the Vacuum Ultraviolet to the Far Infrared p. 511 Critical Analytical Techniques--Optical Characterization

4 Optical Metrology for DMD Characterization p. 521 Backside Picosecond Timing Measurements on CMOS Integrated Circuits p. 526 Optical Constants for Metrology of Hydrogenated Amorphous Silicon-Nitrogen Alloys on Si Feasibility and Applicability of Integrated Metrology Using Spectroscopic Ellipsometry in a Cluster Tool A New Purged UV Spectroscopic Ellipsometer to Characterize Thin Films and Multilayers at 157 nm p. 532 p. 538 p. 543 A New Lithography of Functional Plasma Polymerized Thin Films p. 548 Advanced FTIR Technology for the Chemical Characterization of Product Wafers p. 553 Critical Analytical Techniques--Physical Characterization/X-rays Scanning Electron Microscopy: Present Capability, Future Improvements and Potential Replacements p. 561 Ultra High Resolution X-ray Detectors p. 568 X-ray Metrology by Diffraction and Reflectivity p. 570 Automated SEM and TEM Sample Preparation Applied to Copper/Low-k Materials p. 580 Characterization of Si/SiO[subscript 2] Multilaver Thin Films by Grazing Incidence X-ray Reflectivity p. 586 Measurement of Silicon Dioxide Film Thicknesses by X-ray Photoelectron p. 591 Comparison of High- and Low-Voltage X-ray Mapping of an Electronic Device p. 596 Current Projects of ISO Technical Committee 201 on Surface Chemical Analysis p. 601 Characterization of Ultra-thin Dielectric Films Buried under Poly-Si Electrodes Using X-ray Reflectivity Critical Analytical Techniques--Atom Probes/Scanning Probes Towards Routine, Quantitative Two-Dimensional Carrier Profiling with Scanning Spreading Resistance Microscopy Local Electrode Atom Probes: Prospects for 3D Atomic-Scale Metrology Applications in the Semiconductor and Data Storage Industries p. 605 p. 613 p. 620 Evaluation of MFM for Probing Electromigration Processes p. 630 FASTC2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images p. 635 High Resolution Dopant Profiling Using a Tunable AC Scanning Tunneling Microscope p. 641 SCaMsim, A New Three-Dimensional Simulation Tool for Scanning Capacitance Microscopy Experimental Investigation and 3D Simulation of Contrast Reversal Effects in Scanning Capacitance Microscopy p. 647 p. 652 Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy p. 657 Critical Analytical Techniques--Sims/Shallow Junction Analysis Ultra-shallow Junction Metrology Using SIMS: Obstacles and Advances p. 665 High Depth Resolution Secondary Ion Mass Spectrometry (SIMS) Analysis of Si[subscript 1-x]Ge[subscript x]:c HBT Structures p. 672 Neutron Activation Analysis for Calibration of Phosphorus Implantation Dose p. 677 High Precision Measurements of Arsenic Implantation Dose in Silicon by Secondary Ion Mass Spectrometry p. 682

5 Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization TOF-SIMS Quantification of Low Energy Arsenic Implants through Thin SiO[subscript 2] Layers p. 687 p. 692 Author Index p. 697 Key Words Index p. 703 Table of Contents provided by Blackwell's Book Services and R.R. Bowker. Used with permission.

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