Toray Electro Coating Material Non- photosensitive Polyimide Semicofine SP-400 Series. Toray Industries Inc.

Transcription

1 Toray Electro Coating Material Non- photosensitive Polyimide Semicofine SP-400 Series Toray Industries Inc. 1

2 Contents 1. Product Line up of Toray s PI Coating Material 2. Mechanical Properties 3. Thermal Properties 4. Electrical Properties 5. Liquid Properties (1)SP-453 (2)SP Process Conditions (1)SP-453 (2)SP Relationship Between Rotation Speed Film Thickness (1)SP-453 (2)SP Handling 2

3 1. Product Line Up of Toray s PI Coating Material UR-3100E series Broad Band APPLIABLE UR-5100FX series LOW CTE UR-2400 series G -LINE APPLIABLE Photosensitive PI Photoneece Photosensitive Positive Type GOOD ADHESION, HIGH CHEMICAL RESISTANCE SP-300 series SP-400 series GOOD ADHESION, EASY PROCESS Non Photosensitive PI Semicofine SP-040series LOW CTE SP-800 series GOOD ADHESION 3

4 2. Mechanical Properties Properties unit Value Tensile Strength Mpa 140 Elongation % 50 Young s Module Gpa 3.6 Measured value by the standard conditions of Toray Industries 4

5 3. Thermal Properties Properties unit Value Coefficient of Thermal Properties ppm 40 5% Weight Loss Temperature (C) 560 Glass Transition Temperature (C) 300 Measured value by the standard conditions of Toray Industries 5

6 4. Electrical Properties Properties unit Value Dielectric Constant 3.2 Volume Reisistivity Ω/cm >1.0E+16 Surface Resistivity Ω >1.0E+16 Dielectric Strength KV/mm >300 Measured value by the standard conditions of Toray Industries 6

7 5. Liquid Properties (1)SP-453 Properties unit Value Solid Content % 21% Viscosity Mpa/s 5000 Na <0.1 K <0.1 Inpurity ppm Ca <0.1 Cu <0.1 Cr <0.1 Fe <0.1 Solvent N-Methyl-Pyrrolidone 7

8 5. Liquid Properties (2)SP-483 Properties unit Value Solid Content % 23% Viscosity Mpa/s Na <0.1 K <0.1 Inpurity ppm Ca <0.1 Cu <0.1 Cr <0.1 Fe <0.1 Solvent N-Methyl-Pyrrolidone 8

9 6. Process Condition -1 (film thickness 5μm) (1)SP-453 Process for film thickness of 5 micrometer Process Device Condition Temp Speed Time 1.Waffer Dry Hot Plate 230C 120sec 700rpm 10sec 2.Coating Spinner 23C 3sec slope 4000rpm 30sec 3.Leveling Spin Coater Head 23C/45%RH 60sec 95C 90sec 3.Precure Hot Plate 125C 90sec 4.Positive Type OFPR rpm 2sec Spinner 23C/45%RH Resist Coating Vicosity100cps 3300rpm 30sec 5.Resist Bake Hot Plate 105C 120sec G-line Stepper 250mj/cm(436nm) 6..Exposure 7.Develop Ecthing, Rinse, Dry Mirror Projector 150mj/cm(365nm) Mask Alighner 100mj/cm(365nm) Dispnese Shower NMD-3 100rpm 5sec Dispense Shower NMD-3 30rpm 5sec Puddle 0 65sec Dispense Shower NMD-3 500rpm 5sec Dispense Shower NMD-3 30rpm 5sec Puddle 0 65sec Cleaning NMD-3 500rpm 5sec Rinse DI water 400rpm 30sec Dry 1000rpm 10sec Dry 3000rpm 20sec 9

10 6. Process Condition -2 (film thickness 5μm) Process for film thickness of 5 micrometer Process 8.Remove resist 10.Post Cure Device Condition Speed Time Dispense Shower N-Butyl Acetate 100rpm 5sec Dispense Shower N-Butyl Acetate 30rpm 5sec Puddle 40sec Dispense Shower N-Butyl Acetate 30rpm 5sec Puddle 40sec N-Butyl Acetate 5sec slope Dispense Shower N-Butyl Acetate 1000rpm 20sec Dry 1000rpm 10sec Dry 3000rpm 20sec 140C 5min Hot Plate in N2 180C 5min 350C 5min Oven 140C 30min N2 20litter/min 200C 30min 5degree slope 350C 60min 1. Preferable to dry waffer for better adhesion. 2.SP-453 (20%) Solid Content with 5000 mpa S at 25degrees. Please control Rotation speed,so precure film thickness 8μm. 3. PGMEA may also be used as a resist remover. 4.Hot plate and oven may also be used. 5. Step cure is preferable. 10

11 6. Process Condition -1 (film thickness 10μm) (2)SP-483 Process for film thickness of 10 micrometer Process Device Condition Temp Speed Time 1.Waffer Dry Hot Plate 230C 120sec 700rpm 10sec 2.Coating Spinner 23C 3sec slope 3500rpm 30sec 3.Leveling Spin Coater Head 23C/45%RH 60sec 95C 150sec 3.Precure Hot Plate 125C 150sec 4.Positive Type OFPR rpm 2sec Spinner 23C/45%RH Resist Coating Vicosity100cps 3300rpm 30sec 5.Resist Bake Hot Plate 105C 120sec 6..Exposure 7.Develop Ecthing, Rinse, Dry G-line Stepper Mirror Projector Mask Alighner 250mj/cm(436nm) 150mj/cm(365nm) 100mj/cm(365nm) Dispnese Shower NMD-3 100rpm 5sec Dispense Shower NMD-3 30rpm 5sec Puddle 0 80sec Dispense Shower NMD-3 500rpm 5sec Dispense Shower NMD-3 30rpm 5sec Puddle 0 80sec Cleaning NMD-3 500rpm 5sec Rinse DI water 400rpm 30sec Dry 1000rpm 10sec Dry 3000rpm 20sec 11

12 6. Process Condition -1 (film thickness 10μm) Process for film thickness of 10 micrometer Process 8.Remove resist 10.Post Cure Device Condition Speed Time Dispense Shower N-Butyl Acetate 100rpm 5sec Dispense Shower N-Butyl Acetate 30rpm 5sec Puddle 40sec Dispense Shower N-Butyl Acetate 30rpm 5sec Puddle 40sec N-Butyl Acetate 5sec slope Dispense Shower N-Butyl Acetate 1000rpm 20sec Dry 1000rpm 10sec Dry 3000rpm 20sec 140C 5min Hot Plate in N2 180C 5min 350C 5min Oven 140C 30min N2 20litter/min 200C 30min 5degree slope 350C 60min 1. Preferable to dry waffer for better adhesion. 2.SP-483 (23%) Solid Content with 18000mPa s at 25degrees. Please control Rotation speed,so precure film thickness 16μm. 3. PGMEA may also be used as a resist remover. 4.Hot plate and oven may also be used. 5. Step cure is preferable. 12

13 Film Thickness 7. Relationship Between Rotation Speed & Film Thickness (1)SP-453 (μm) 20 Time of Coating 30sec 15 Precure Final Cure Rotation Speed (R) (rpm) Coating Conditions 700rpm 10sec,slope 3sec, (R) rpm 30sec Precure Conditions 95C 1.5min+125C 1.5min(Hot Plate) Curing Conditions 140C 30min+250C 30min+350C 60min N2 13

14 Film Thickness 7. Relationship Between Rotation Speed & Film Thickness (1)SP-483 (μm) 60 Time of Coating 30sec Precure Final Cure Rotation Speed (R) (rpm) Coating Conditions 700rpm 10sec,slope 3sec, (R) rpm 30sec Precure Conditions 95C 2.5min+125C 2.5min(Hot Plate) Curing Conditions 140C 30min+250C 30min+350C 60min N2 14

15 8. Storage & Handling Store in -16C, avoid air contact. Defrost to -3C day before usage. Keep at room temperature for about 2hours before usage. Polyimide can easily absorb moisture. To avoid change in viscosity please close the bottle after usage. Please wait about 30sec to spin after dropping the PI on the wafer. Please leave the wafer still for about 30sec before precuring. Please keep the wafer in horizontal position for curing. Steep rise in temperature during curing may cause crack in the film layer. Please read the MSDS for safety information regarding the product. 15