EE C245 ME C218 Introduction to MEMS Design Fall 2011
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1 Lecture Outline EE C245 ME C218 Introduction to MEMS Design Fall 2011 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA Reading: Senturia Chpt. 3, Jaeger Chpt. 11, Handout: Surface Micromachining for Microelectromechanical Systems Lecture Topics: surface micromachining Stiction Residual stress Topography issues Nickel metal surface micromachining 3D pop-up MEMS Foundry MEMS: the MUMPS process The Sandia SUMMIT process Lecture Module 5: Surface Micromachining EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 1 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 2 Surface-Micromachining Isolation Nitride Hydrofluoric Acid Release Etchant Interconnect Sacrificial Wafer Structural Polysilcon Free- Standing Uses IC fabrication instrumentation exclusively Variations: sacrificial layer thickness, fine- vs. largegrained polysilicon, in situ vs. POCL 3 -doping 300 khz Folded- Micromechanical Resonator EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 3 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 4 1
2 Why? Compatible with IC fabrication processes Process parameters for gate polysilicon well known Only slight alterations needed to control stress for MEMS applications Stronger than stainless steel: fracture strength of polysi ~ 2-3 GPa, steel ~ 0.2GPa-1GPa Young s Modulus ~ GPa Extremely flexible: maximum strain before fracture ~ 0.5% Does not fatigue readily Surface-Micromachining Process Flow Several variations of polysilicon used for MEMS LPCVD polysilicon deposited undoped, then doped via ion implantation, PSG source, POCl 3,or B-source doping In situ-doped LPCVD polysilicon Attempts made to use PECVD silicon, but quality not very good (yet) etches too fast in HF, so release is difficult EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 5 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 6 Layout and Masking Layers At Left: Layout for a folded-beam capacitive combdriven micromechanical resonator Masking Layers: 1 st : POLY1(cf) Anchor Opening: ANCHOR(df) Cross-sections through A-A Isolation Interconnect Photoresist Nitride Deposit isolation LTO (or PSG): 1 hr. 40 min. o C Densify the LTO (or PSG) o C for 30 min. Deposit nitride: Target = 100nm 22 min. o C Deposit interconnect polysi: Target = 300nm In-situ Phosphorous-doped 1 hr. 30 min. o C A A 2 nd : POLY2(cf) Capacitive comb-drive for linear actuation Folded-beam support structure for stress relief Lithography to define poly1 interconnects using the POLY1(cf) mask RIE polysilicon interconnects: CCl 4 /He/O Remove photoresist in PRS2000 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 7 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 8 2
3 Photoresist Sacrificial Structural Polysilcon Deposit sacrificial PSG: 1 hr. 40 min. o C Densify the PSG o C for 30 min. Lithography to define anchors using the ANCHOR(df) mask Align to the poly1 layer Etch anchors RIE using CHF 3 /CF 4 Remove PR in PRS2000 Quick wet dip in 10:1 HF to remove native oxide Deposit structural polysi In-situ Phosphorous-doped 11 hrs. o C EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 9 Hard Mask Deposit oxide hard mask Target = 500nm 25 min. o C Stress Anneal o C Or RTA for o C in 50 sccm N 2 Lithography to define poly2 structure (e.g., shuttle, springs, drive & sense electrodes) using the POLY2(cf) mask Align to the anchor layer Hard bake the PR longer to make it stronger Etch oxide mask first RIE using CHF 3 /CF 4 Etch structural polysilicon RIE using CCl 4 /He/O Use 1 min. etch/1 min. rest increments to prevent excessive temperature EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 10 Surface-Micromachined Examples Hydrofluoric Acid Release Etchant Wafer Free-Standing Remove PR (more difficult) Ash in O 2 plasma Soak in PRS2000 Release the structures Wet etch in HF for a calculated time that insures complete undercutting If 5:1 BHF, then ~ 30 min. If 48.8 wt. % HF, ~ 1 min. Keep structures submerged in DI water after the etch Transfer structures to methanol Below: All surface-micromachined in polysilicon using variants of the described process flow Folded- Comb-Driven Resonator Free-Free Resonator Three-Resonator Micromechanical Filter Supercritical CO 2 dry release EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 11 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/
4 Structural/Sacrifical Material Combinations Wet Etch Rates (f/ K. Williams) Structural Material Sacrificial Material Etchant Poly-Si SiO 2, PSG, LTO HF, BHF Al Photoresist O 2 plasma SiO 2 Poly-Si XeF 2 Al Si TMAH, XeF 2 Poly-SiGe Poly-Ge H 2 O 2, hot H 2 O Must consider other layers, too, as release etchants generally have a finite E.R. on any material Ex: concentrated HF (48.8 wt. %) E.R. ~ 0 Silicon nitride E.R. ~ 1-14 nm/min Wet thermal SiO 2 ~ μm/min Annealed PSG ~ 3.6 μm/min Aluminum (Si rich) ~ 4 nm/min (much faster in other Al) EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 13 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 14 Film Etch Chemistries Issues in Surface Micromachining For some popular films: EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 15 Stiction: sticking of released devices to the substrate or to other on-chip structures Difficult to tell if a structure is stuck to substrate by just looking through a microscope Residual Stress in Thin Films Causes bending or warping of microstructures Limits the sizes (and sometimes geometries) of structures Topography Stringers can limit the number of structural levels Stringer Stiction EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/
5 Microstructure Stiction Microstructure Stiction Stiction: the unintended sticking of MEMS surfaces Release stiction: Occurs during drying after a wet release etch Capillary forces of droplets pull surfaces into contact Very strong sticking forces, e.g., like two microscope slides w/ a droplet between In-use stiction: when device surfaces adhere during use due to: Capillary condensation Electrostatic forces Hydrogen bonding Van der Waals forces Stiff Rinse Liquid Wide Anchor Stiction EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 17 EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/09 18 Hydrophilic Versus Hydrophobic Hydrophilic: A surface that invites wetting by water Get stiction Occurs when the contact angle θ water < 90 o Hydrophobic: A surface that repels wetting by water Avoids stiction Occurs when the contact angle θ water > 90 o Lotus Surface [Univ. Mainz] EE C245: Introduction to MEMS Design LecM 5 C. Nguyen 8/20/
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Surface-Micromachining Process Flow Photoresist Sacrificial Oxide Structural Polysilcon Deposit sacrificial PSG: Target = 2 m 1 hr. 40 min. LPCVD @450 o C Densify the PSG Anneal @950 o C for 30 min. Lithography
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