New Metallization Concept for High Efficiency/Low Cost c-si Photovoltaic Solar Cells
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1 New Metallization Concept for High Efficiency/Low Cost c-si Photovoltaic Solar Cells 5 th Metallization Workshop Oct. 20, 2014, Konstanz, Germany Tetsu TAKAHASHI, Taeko SENBA, Seiya KONNO, Kazuo MURAMATSU and Aki TANAKA
2 Agenda <2/23> New Concepts for High Efficiency and Low (material) Cost Firing Ag Paste for Higher Efficiency Low J 01 improved V oc loss Low surface concentration capability Ag replacement to Cu Low silver consumption Low Sn diffusivity
3 Firing Silver Paste for High Efficiency
4 Problem of Metallization <4/23> [*] Sophisticated wafer Low J0e =High Voc Metallization inc. J0e =high Voc loss NOT sophisticated!! [*] H. Hannebauer et al., Proceedings of 27 th EU-PVSEC, 2012
5 Contact Formation [**] [*] <5/23> Etching SiN x :H layer Forming Ag crystallites on emitter Thin glass frit layer Colloidal Ag in glass Contribute to contact Emitter surface exposed to glass layer NO passivation underneath the fingers [*]G. Schbert, Doctral Thesis, University of Konstanz, Germany, 2006 [**]L. K. Cheng et al., DuPont Technical Paper
6 Concept <6/23> Indirect contact formation by Screen Printed Thick Film Technology Low J 01 = Higher Voc Enough low ρc = Same FF Make electrical contact with low surface concentration (ex. N D : cm -3 order)
7 Evaluation <7/23> Low J 01 improved V oc loss Low surface concentration capability cm -3 & cm surface (tex. wafer, mm) Metallization fraction, F M vs J 01 [*] 100 μm, 64 fingers (for H pattern) 100 μm, 5 mm intermediate fingers Full area Al-BSF Firing at 800 C peak [*] T. Fellmeth et al., Energy Procedia, 8 (2011)
8 F M vs j 01 -R sheet dependence- <8/23> Saturation Current Density, J 01 /fa cm Wafer 95 Ω/sq. N Ds cm -3 Novel Conventional Metallization Area Fraction, F M Saturation Current Density, J 01 /fa cm Wafer 130 Ω/sq. N Ds cm -3 Novel Conventional Metallization Area Fraction, F M
9 Cross Section View [FE-SEM] - Commercial Emitter Wafer Test - Novel Paste <9/23> Thin (or no) glass layer No silver crystallite Remain the passivation? 1 µm 5 th Metallizaton Workshop Oct. 23, 2014 Konstanz, Germany
10 Interface Analysis <10/23> Ag Colloidal particle Ag side (O rich region) Not visible metal (Ag) Si side (N rich region)? Si 100 nm 5 th Metallizaton Workshop Oct. 23, 2014 Konstanz, Germany
11 Interface Analysis <11/23> Intensity, I/a. u. Si Si Ag Ag Ag Ag Ag Ag N N O O O O Point 1 Point μm 1 Interface Layer SiN x :H partially oxidized Ag side higher O content Si side lower O content 2 Kinetic Energy, E k /ev
12 Cell Level Test - Fill Factor, FF μm, 84 fingers <12/23> Fill Factor, FF No significant FF loss Ω/sq 130 Ω/sq 95 Ω/sq 130 Ω/sq 95 Ω/sq 130 Ω/sq 95 Ω/sq 130 Ω/sq 750 C 775 C 750 C 775 C Conv. Novel
13 Cell Level Test - Fill Factor, FF μm, 84 fingers <13/23> Open Circuit Voltage, V oc /V No V oc Loss Ω/sq 130 Ω/sq 95 Ω/sq 130 Ω/sq 95 Ω/sq 130 Ω/sq 95 Ω/sq 130 Ω/sq 750 C 775 C 750 C 775 C Conv. Novel
14 Summary of Silver Paste <14/23> Novel Fire-Through silver paste showed quite positive effect for J 01 at low surface concentration. Colloidal silver dispersed interface layer might be assist electron conduction. Interface layer might prevent the defect formation on Si surface and prevent surface recombination.
15 Silver Replacement
16 Demand <16/23> 100 % 100 % 80 % in 10 years 2008 in 10 years 2010 in 10 years 2011 in 10 years % in 3 years in 5 years in 10 years 60 % 60 % 40 % 40 % 20 % 20 % 0 % Screen Plating Hybrid Ink-Jet New 0 % Silver Copper Others Printing Concepts Screen Printing Technology with Silver Replacement! 1 st step Copper Bus Bar [*]G. Schubert et al., Energy Procedia, 43 (2013) 12-17
17 Test Process <17/23> Front Ag Print 50 μm, 84 fingers 1.3 mm, 3 bus-bar Wafer p-si Mono, 90 Ω/sq. Rear full Al print Drying 150 C, 60 s Front Ag Print 50 μm, 84 fingers Sample 15 mm sq. dicing Soldering (Ag) Soldering (Cu) Pb-Sn ribbon Pb-Sn ribbon 250 C/3 s 250 C/5 s Ageing 150 C/5 h Peeling Test Firing 800 C peak Test Cell Front Cu Print 1.5 mm, 3 bus-bar Curing 200 C/30 min, N 2
18 IV Results <18/23> No negative effects on cell level!!
19 Peeling Strength <19/23> Peeling after ageing No negative impact
20 <20/23> After ageing cross section -Cu buspb-sn solder Cu Cu-Sn alloy (Sn diffused layer) resin Sn diffused only surface region Si 1 μm 5th Metallizaton Workshop Oct. 23, 2014 Konstanz, Germany
21 After ageing cross section -Ag bus- <21/23> Pb-Sn solder Ag Sn diffused into Ag deeply Si 1 μm 5th Metallizaton Workshop Oct. 23, 2014 Konstanz, Germany
22 One Cell Module Test <22/23> 0 TC Result 0 DH Result Eff Eff. Change Ratio, /% FF Voc Change Ratio, /% FF Voc -5 Isc Isc Cycle Number, N c No significant deterioration (test still continue) Time, T/h
23 Summary of Copper Paste <23/23> Copper bus bar successfully worked at cell level. No disadvantage was observed at mini-module test.
24 Acknowledgements <24/23> This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI). We would like to thank Dr. Tomihisa Tachibana, Mari Aoki and Prof. Yoshio Ohshita (Toyota Technological Institute) for useful discussion. We also would like to thank Hideo Tokuhisa and Satoko Morita (Advanced Industrial Science and Technology ) for Cu-bus mini module test.
25 <25/23>
26 IV Results <30/23> No negative effects on cell level!!
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