Hitachi Anisotropic Conductive Film ANISOLM AC-8955YW. Issued 2007/03/30

Transcription

1 Hitachi Chemical Data Sheet Hitachi Anisotropic Conductive Film ANISOLM AC-8955YW Issued 27/3/3 1. Standard specification, bonding condition, storage condition and characteristic Precautions in bonding Connection reliability Insulation reliability (In-situ bias test) Particle counts on bump Physical properties Reaction rate...9 R&D Department Advanced Interconnect Material Division Hitachi Chemical Co.,Ltd., < NOTICE: This document may wholly or partially be subject to change without notice.>

2 1. Standard specification, bonding condition, storage condition and characteristic Standard Specifications Capability in interconnection circuit Conductive particle Item Unit AC-8955YW Remark Min. contact area um 2 1,5 Min. space Bump space 13 Conductor space in misalignment um Size um 4 1 Density pcs/mm 2 37, Thickness um 23 Au coated plastic particle with surface treatment Width mm 1.5, 2., 2.5, 3., 3.5, 4. Contact us for other width request Length m 5 Color Transparent (gray) Core diameter mm 18.5 Min. contact area (Including Msalignment) Bump Bump Glass IC Min. space Min. space (In Misalignment) Electrode (ITO, Metal etc.) Electrode (ITO, Metal etc.) IC Bump Electrode Glass (ITO, Metal etc.) Configuration Cover film (Transparent PET 25um) Particle-filled layer Non particle-filled layer Separator (White PET 5um) Bonding conditions ACF lamination IC main bonding Temperature degc 7 +1/-1 Final ANISOLM temperature Pressure MPa 1 Per unit area of ANISOLM Time s 1-3 Temperature degc Final ANISOLM temperature Pressure MPa 4-12 Per total bump area Time s 5 or more Including temp increasing time Storage conditions Characteristics Unopened 7 months after date of manufacture when stored at -1 to 5degC. Opened 3 days at 25degC or below and 7%RH or below. Connection resistance ohm <5 Connection area: 15um 2 Insulation resistance ohm >1 8 Insulation gap: 1um Operating range Temperature degc -4 to 1 Under no stress Current ma/mm 2 5 or below Voltage V 5 or below Notes: 1) Leave ANISOLM at room temperature for an hour before opening sealed bag. Make sure ANISOLM is not wet before using it. 2) Suitable bonding condition depends on specification of IC chip, glass substrate, bonding machines etc. Please contact us for detailed information. 3) Connection resistance was measured by four-probe method at 1mA using Hitachi Chemical s testing pieces. 4) Insulation resistance was measured by applying DC5V for 6 seconds using Hitachi Chemical s testing pieces. Reliability test result depends on materials used. Please contact us for detailed information. The values given above represent typical measurements, not guaranteed ones. 1

3 2. Precautions in bonding 2.1 Temperature profile in main-bonding of IC chip Temperature of ACF [degc] Time [sec] Ex.) Bonding condition: 2 degree C-5sec Head setting temperature: 22 degree C Chip size: 1.7mm x 17.2mm x.55mmt Thickness of glass substrate:.7mmt Caution: Temperature should reach at more than 9% of targeting ACF temperature within first 2 seconds. 2.2 Measurement of ANISOLM temperature Bonding head LCD Driver IC ACF Thermo couple Temperature recorder Bonding stage 2.3 Bonding head (1) In order to press equally, make sure bonding head is even and parallel to the surface. (2) Use slightly wider head than IC chip. Example; Chip width 2.mm Head width 2.5mm 2.4 Misalignment of opposite circuits Make sure opposite circuits are well aligned and matched each other. 2

4 3. Connection reliability 3.1 Measurement (1) Used materials for measurement / Test chip A: Min. contact area 2,5um2 (Bump size: 5 x 5um, IC size: 1.7 x 17 x.55mm) / Test chip B: Min. contact area 2,25um2 (Bump size: 45 x 45um, IC size: 1.2 x 1 x.55mm) / Test board: ITO coated glass(ito thickness:.2um, Surface resistance: 1ohm/ ) (2) Measurement of connection resistance (refer to the diagram below) / Four-probe measurement (Circuit resistance can be cancelled) / Measuring current: 1mA Bump ITO electrode ACF V I = 1mA Bump R ACF ITO electrode V I = 1mA Four probe measurement in COG interconnection 3

5 3.2 Test results ACF : AC-8955YW-23 Lamination condition : 8degC 1MPa 2sec Main bonding condition : 21degC 8MPa 5sec (1) Min. contact area: 2,5 um2 (IC size; 1.7 x 17mm) / High temperature humidity test (85degC85%RH) Contact resistance (ohm) Time (h) / Temperature cycling test (-4 / 1degC) Contact resistance (ohm) Time (cyc) 4

6 (2) Min. contact area: 2,25 um2 (IC size; 1.2 x 1mm) / High temperature humidity test (85degC85%RH) Contact resistance (ohm Time (h) / Temperature cycling test (-4 / 1degC) Contact resistance (ohm Time (cyc) 5

7 4. Insulation reliability (In-situ bias test) 4.1 Measurement (1) Used materials for measurement / Test chip C: Min. space 15, 12, 1um (Pitch: 38um, IC size: 1.9 x 15 x.55mm) / Test board: ITO coated glass(ito thickness:.2um, Surface resistance: 1ohm/ ) (2) Measurement of insulation resistance After main bonding IC chip onto glass substrate using ACF, the sample was set in constant temperature humidity chamber. 2V was kept being applied between comb-shaped circuits during this in-situ testing and insulation resistance between comb-shaped circuits was monitored and recorded. / Test condition: 4degC9%RH / Voltage: 2V Bump configuration 2V Min. space : 15, 12, 1um 6

8 4.2 Test results ACF : AC-8955YW-23 Lamination condition : 8degC 1MPa 2sec Main bonding condition : 21degC 8MPa 5sec 1.E+12 Min. space : 15um 1.E+12 Min. space : 12um Insulation resistance [ohm] 1.E+11 1.E+1 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 Insulation resistance [ohm] 1.E+11 1.E+1 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 1.E E Time [hrs] Time [hrs] Insulation resistance [ohm] 1.E+12 1.E+11 1.E+1 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 1.E+4 Min. space : 1um Time [hrs] Appearances of ITO lines after bias testing (after 5hrs) Uncured ACF area around IC chip 4degC9%RH/2V Edge of IC Edge of ACF 7

9 5. Particle counts on bump 5.1 Measurement (1) Used materials for measurement / Test chip C: Bump size 3,um2 (3 x 1um), IC size: 1.9 x 15 x.55mm / Test chip D: Bump size 2,um2 (2 x 1um), IC size: 1.6 x 15 x.55mm) / Test board: ITO coated glass(ito thickness:.2um, Surface resistance: 1ohm/ ) (2) Measurement of particle counts on bump After main bonding IC chip onto test glass, particle counts on bump was measured by optical microscope. 5.2 Test result Particle counts on bump Bump size Particle counts on bump Average Stdev Ave 3Stdev Ave 4.5Stdev 3, un2 3 x 1um ,um2 2 x 1um ,5um2 * *1 Particle counts at 1,5um2 is a calculated data based on the data at 2,um2 and 3,um2. Particle counts on bump (pcs.) Ave. Ave.-3.Stdev. Ave.-4.5Stdev Bump area (um2) 8

10 6. Physical properties Item Unit AC-8955YW Tg *1 DegC 145 Elastic modulus GPa 1.9 C.T.E *2 Ppm/degC 65 Water absorption rate Wt% 1. Conditions *1 Measured with DVE; Dynamic Visco-Elastic Analyzer Test conditions: Fully cured sample, Tensile mode, 1Hz Frequency, 1 /min *2 Measured with TMA; Thermal Mechanical Analyzer Test conditions: Fully cured sample, Tensile mode, 1 /min, Load 5gf 7. Reaction rate Measuring method: Each specimen was heated and hardened in oil kept at a specified temperature for a specified time, the amount of heat generated was measured with a DSC unit, and the reaction rate was determined with the following formula; Reaction rate = (Q -Q T )/Q 1 Q initial amount of heat generated Q T amount of heat generated after hardening Reaction rate [%] Temperature [degc] 5 sec 1 sec Reaction rate of AC-8955YW 9