ENCAPSULATION BARRIER LAYERS

Transcription

1 ENCAPSULATION BARRIER LAYERS PUBLICATION REVIEW ON SAVANNAH & FIJI

2 Humidity Barriers * WVTR: Water Vapor Transmission Rate [g/m 2 /day] Food packaging Advanced Barriers TradiPonal Barriers Polymer Substrates Advanced Materials WVTR [g/m 2 /day] OLED TFTs LCDs ElectrophorePc Device Requirements Advanced Materials 2009, 21, MEMs and OLED packaging driving use of ALD Glass slide/epoxy/polymer based technology not adequate WVTR * < 10-6 g/m 2 /day demonstrated in lab via ALD ALD films now used roupnely in producpon 2

3 Humidity Barriers J.S. Park, Semicond. Sci. Technol. 26 (2011) ConvenPonal EncapsulaPon Thin Film Barrier CoaPng MEMs and OLED packaging driving use of ALD Glass slide/epoxy/polymer based technology not adequate WVTR * < 10-6 g/m 2 /day demonstrated in lab via ALD ALD films now used roupnely in producpon 3

4 Al 2 O 3 EncapsulaPon Carcia, P. F., J. Nanosci. Nanotechnol. 11(9), (2011) Change in optical transmission over 3 yrs for 25nm Al 2 O 3 on PEN (WVTR ~1E-5) Experimental q Savannah S200, deposipon at C q Study impact of process temperature and thickness on WVTR Aging at 38 C / 85%RH of Al 2 O 3 films (Ca px. after 1200h) Results Thicker films grown at higher temp. are superior to thinner films at lower temp. Polymers that can withstand higher temp. should be selected (e.g., PEN, PET) 4

5 Nanolaminate EncapsulaPon q q q Savannah S200, deposipon at 80 o C Enables encapsulapon of low cost OLED EncapsulaPon films being used for microelectronics packaging, oppcal, MEMS ZrO 2 Al 2 O 3 ZrO 2 Al 2 O 3 Test Conditions: 80 C at 70% Relative Humidity 1. Meyer, J., et al. (2009) Applied Physics Le6ers, 94(23), Meyer, J., et al. (2009) Advanced Materials, 21(18),

6 Al 2 O 3 /ZrO 2 EncapsulaPon Meyer, J., et al. Applied Physics LeFers, 96, (2010). Savannah S200, deposition at 80 C Accelerated Test: 80 o C/80% humidity q WVTR (g/m 2 /day) = 3.2E-4 at 80 o C for 40nm film 8.7E-7 at RT q Al 2 O 3 -ZrO 2 nanolaminate combines the barrier performance of Al 2 O 3 with anp-corrosion performance of ZrO 2 6

7 Low Temperature ALD Thermal ALD film properties for Al 2 O 3, HfO 2, and ZrO 2 Al 2 O 3 HfO 2 ZrO 2 Precursors TMA + H 2 O Hf(NMe 2 ) 4 + H 2 O Zr(NMe 2 ) 4 + H 2 O Temperature 95 C 100 C 95 C Growth Rate per Cycle Typical Thick. Uniformity 200mm Ø 150mm Ø 0.9 Å 1.12 Å 1.1 Å <1.5% <1.0% <2.0% <1.5% <2.0% <1.5% Thickness [Å] Al2O3 HfO2 ZrO ALD Cycle RefracPve Index

8 Key EncapsulaPon References on Savannah and Fiji s 1. Wegler, B., et al., (2014). Influence of PEDOT:PSS on the effecpveness of barrier layers prepared by atomic layer deposipon in organic light emivng diodes. JVST A, 33(1), 01A Warnat, S., Forbrigger, C., Hubbard, T., Bertuch, A., & Sundaram, G. (2014). Thermal MEMS actuator operapon in aqueous media/seawater: Performance enhancement through atomic layer deposipon post processing of PolyMUMPs devices. JVST A, 33(1), 01A126. doi: / Carcia, P. F, et al.,. (2013). Effect of early stage growth on moisture permeapon of thin-film Al2O3 grown by atomic layer deposipon on polymers. JVST A, 31(6), doi: / Clark, M. D., et al., Ultra-thin alumina layer encapsulapon of bulk heterojuncpon organic photovoltaics for enhanced device lifepme. Organic Electronics, 15(1), 1 8. doi: /j.orgel Carcia, P. F., et al. (2012). Permeability and corrosion in ZrO2/Al2O3 nanolaminate and Al2O3 thin films grown by atomic layer deposipon on polymers. JVSTA, 30(4), doi: / Carcia, P. F., McLean, R. S., Sauer, B. B., & Reilly, M. H. (2011). Atomic Layer DeposiPon Ultra-Barriers for Electronic ApplicaPons Strategies and ImplementaPon, 11(9), doi: /jnn Chang, C.-Y., & Tsai, F.-Y. (2011). Efficient and air-stable plaspcs-based polymer solar cells enabled by atomic layer deposipon. Journal of Materials Chemistry, 21(15), doi: /c0jm04066e 8. Carcia, P. F., et al. (2010). EncapsulaPon of Cu(InGa)Se2 solar cell with Al2O3 thin-film moisture barrier grown by atomic layer deposipon. Solar Energy Materials and Solar Cells, 94(12), doi: /j.solmat Carcia, P. F., et al. (2010). PermeaPon measurements and modeling of highly defecpve Al2O3 thin films grown by atomic layer deposipon on polymers. Applied Physics Le6ers, 97(22), doi: / Meyer, J., and al., (2010).The origin of low water vapor transmission rates through Al2O3/ZrO2 nanolaminate gas-diffusion barriers grown by atomic layer deposipon. Applied Physics Le6ers, 96(24), Sarkar, S., et al., (2010). EncapsulaPon of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposipon. Organic Electronics, 11(12), doi: /j.orgel Meyer, J., et al., (2009). Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable EncapsulaPon of Organic Electronics. Advanced Materials, 21(18), doi: /adma Meyer, J., et al. (2009). P-157: Highly-Efficient Gas Diffusion Barriers Based on Nanolaminates Prepared by Low-Temperature ALD. SID Symposium Digest of Technical Papers, 40(1), doi: / Meyer, J., et al. (2009c). Reliable thin film encapsulapon for organic light emivng diodes grown by low-temperature atomic layer deposipon. Applied Physics Le6ers, 94(23), doi: / Chang, C.-Y., et al., Thin-film encapsulapon of polymer-based bulk-heterojuncpon photovoltaic cells by atomic layer deposipon. Organic Electronics, 10(7), doi: /j.orgel Görrn, P., Riedl, T., & Kowalsky, W. (2009). EncapsulaPon of Zinc Tin Oxide Based Thin Film Transistors. The Journal of Physical Chemistry C, 113(25), doi: /jp Kim, N. (2009). FabricaPon and characterizapon of thin-film encapsulapon for organic electronics. PhD DissertaPon, Georgia Tech - h}p://hdl.handle.net/1853/ Kim, N., et al., (2009). A hybrid encapsulapon method for organic electronics. Applied Physics Le6ers, 94(16), doi: / Potscavage, W. J., Yoo, S., Domercq, B., & Kippelen, B., (2007). EncapsulaPon of pentacene/c60 organic solar cells with Al2O3 deposited by atomic layer deposipon. Applied Physics Le6ers, 90(25), doi: /

9 Summary q ALD Al 2 O 3 is an excellent moisture barrier q ALD Al 2 O 3 corrodes in contact with saturated water vapor q ALD Al 2 O 3 -ZrO 2 nanolaminate is resistant to corrosion and meets the requirement of WVTR < 10-6 g/m 2 /day q Cambridge Nanotech/Ultratech ALD deposipon tools are at the forefront of encapsulapon research in academia and industry q Used for encapsulapon at the pilot scale and in mass producpon 9