Qualification Report CASCADEABLE FIFOS. November 1995, QTP# Version 1.2 DEVICE DESCRIPTION MARKETING PART NUMBER. 1K x 9 Cascadeable FIFO

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1 Qualification Report November 1995, QTP# Version 1.2 CASCADEABLE FIFOS MARKETING PART NUMBER CY7C419 CY7C420/CY7C421 CY7C424/CY7C425 DEVICE DESCRIPTION 256 x 9 Cascadeable FIFO 512 x 9 Cascadeable FIFO 1K x 9 Cascadeable FIFO

2 PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied: Cascadeable FIFO Marketing Part #: CY7C425 Device Description: Cypress Division: 1024 x 9 Cascadeable FIFO Cypress Semiconductor Corporation Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. D (7C425) Die Size (stepping): 80 mils x 90 mils (7C425) What ID markings on Die: 7C425D TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal1: 6000A Al with 1500A TiW cap Barrier Metal: Ti/TiW 500A/1200A Metal2: TiW/Al/Ti 1500A/10000A/150A Passivation Type and Materials: 7,000A TEOS 6,000 A Oxynitride Free Phosphorus contents in top glass layer(%): Die Coating(s), if used: Generic Process Technology/Design Rule (µ-drawn): CMOS, Double Poly, Double Metal /0.65 µm Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: None SiO2 / 165 A Cypress Semiconductor - Bloomington, Minnesota Fab3 / R25

3 PAGE 3 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION (7C425) Package Outline, Type, or Name: 28-pin,300-mil PDIP Mold Compound Name/Manufacturer: Sumitomo EME-6300H(R) Lead Frame material: Copper Lead Finish, composition: Solder Plate, 85%Sn, 15%Pb Die Attach Area Plating: Silver Spot Die Attach Pad Dim: 120 mils x 170 mils Die Attach Method: Paste Die Attach Material: Silver Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.3 mil Name/Location of Assembly (prime) facility: Cypress Bangkok, Thailand Assembly Line ID and Process ID: Alpha-X / P283 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION (7C425) Package Outline, Type, or Name: 32-pin PLCC Mold Compound Name/Manufacturer: Sumitomo EME-6300H(R) Lead Frame material: Copper Lead Finish, composition: Solder Plate, 85%Sn, 15%Pb Die Attach Area Plating: Silver Spot Die Attach Pad Dim: 200 mils x 200 mils Die Attach Method: Paste Die Attach Material: Silver Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.3 mil Name/Location of Assembly (prime) facility: Anam, Korea Assembly Line ID and Process ID: Korea-A/ J32R HERMETIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 28-pin, 300-mil CerDIP (7C425) Mold Compound Name/Manufacturer: N/A Lead Frame material: Alloy 42 Lead Finish, composition: Solder Dipped, 63%Sn, 37%Pb Die Attach Area Plating: None Die Attach Pad Dim: 150 mils x 250 mils Die Attach Method: Silver Glass Die Attach Material: Silver Glass Wire Bond Method: Ultrasonic Wire Material/Size: Aluminum / 1.25 mil Name/Location of Assembly (prime) facility: Cypress Bangkok, Thailand Assembly Line ID and Process ID: Alpha-X /D283

4 PAGE 4 OTHER INFORMATION For approval by similarity, identify other devices using the same basic die with bonding or metal mask options or test selections and explain: CY7C419/CY7C420/CY7C421/CY7C424/CY7C425 If Cypress is planning any changes in the near future, identify change (Qtr/Yr) in: Die Design Rev./Shrink: Fab/Assembly site change: Other Devices to be qualified in this technology: Other Packages to be qualified for this device: ESD Voltage Rating (per MIL STD-008, Method 3018): Flammability Classification (UL-94V): Die Process Change: Cross Licensee/Licensor: 1/8 or None Alternate Fab/Assembly Locations: Assembly : >2,200V Please attach the following Qualification / Reliability data for the die revision and Package type, for the fab and assembly sites identified above (mark [X] if included): 1 X HAST (5.5V, 140 C, 85%RH, 15psig) 7 X Operating Life at (temp): 150 C 2 X Temperature Cycles (-65 C to 150 C) 8 X Steady State Life (HTSSL, 5.5V, 150 C) 3 Temperature Cycles (-40 C to 165 C) 9 Temperature Humidity Bias (5.5V, 85 C, 85%RH) 4 Data Retention Bake, Plastic (165 C) 10 X Latchup Testing 5 Data Retention Bake, Hermetic (250 C) 11 X ESD Tests (MIL-STD 883, method 3015) 6 X Autoclave (PCT, 121 C, 100%RH) 12 X Other: Current Density

5 PAGE 5 Product Family: Mfg Division: PRODUCT INFORMATION FOR QUALIFICATION BY SIMILARITY Cascadeable FIFO Cypress Semiconductor Supplier's Part Number Rated Speed (ns) CY7C419 CY7C420 CY7C421 CY7C424 CY7C425 -**AC -**JC -**PC -**VC -**DMB -**LMB -**PC -**DMB -**AC -**JC -**PC -**VC -**DMB -**LMB -**PC/PI -**DC/DMB -**AC -**JC -**PC -**VC -**DMB -**LMB 10 ns to 65 ns 10 ns to 65 ns 10 ns to 65 ns 65 ns to 20 ns 65 ns to 20 ns Pkg Size/ Type 32 TPQF 28.3 PDIP 28.3 SOJ 28.3 CDIP 32R LCC 28.6 PDIP 28.6 CDIP 32 TPQF 28.3 PDIP 28.3 SOJ 28.3 CDIP 32R LCC 28.6 PDIP 28.6 CDIP 32 TPQF 28.3 PDIP 28.3 SOJ 28.3 CDIP 32R LCC Die Rev. Die Size mil x mil (stepping) Design Rule (µ) Fabrication Process ID D 80 x R25 CMOS D 80 x µ R25 CMOS D 80 x µ R25 CMOS D 80 x µ R25 CMOS D 80 x µ R25 CMOS Line ID Passivation Type 3 TEOS + Oxynitride 3 TEOS + Oxynitride 3 TEOS + Oxynitride 3 TEOS + Oxynitride 3 TEOS + Oxynitride Mold Compound Assembly Line Location Sumitomo Anam-Bupyong, Korea Anam, Korea Sumitomo Omedata, Indonesia Sumitomo Anam-Bupyong, Korea Anam, Korea Sumitomo Omedata, Indonesia Sumitomo Anam-Bupyong, Korea Anam, Korea ESD Volt Rating >2,200V HBM >2,000V CDM >2,200V HBM >2,000V CDM >2,200V HBM >2,000V CDM >2,200V HBM >2,000V CDM >2,200V HBM >2,000V CDM

6 PAGE 6 DEVICE RELIABILITY SUMMARY Marketing Part: CY7C425 Wafer Fab: Fab3 - Bloomington, MN Pkg Description: 28-pin, 300-mil PDIP 28-pin, 300-mil CDIP High Temperature Dynamic Operating Life (HTOL, 5.5V, 150 C) - Early Failure Rate Device Assy Lot# Fab Lot # 48 Hours Cumulative CY7C425-JC /504 0/1008 CY7C425-DM /504 High Temperature Dynamic Operating Life (HTOL, 5.5V, 150 C) - Latent Failure Rate Device Assy Lot# Fab Lot# 80 Hours 500 Hours Cumulative CY7C425-JC /127 0/127 0/243 CY7C425-DM /116 0/116 Long Life Verification (LLVA, 5.5V, 150 C) Device Assy Lot# Fab Lot# 1000 Hours Cumulative CY7C425-PC /120 0/120 High Temperature Steady State Life (HTSSL, 5.5V, 150 C) Device Assy Lot# Fab Lot# 80 Hours 168 Hours Cumulative CY7C425-JC /78 0/78 0/176 CY7C425-DM /98 0/98 Temperature Cycle (Condition C, -65 C to 150 C) Device Assy Lot# Fab Lot# 100 Cycles 1000 Cycles 1000 Cycles Cumulative CY7C425-DM /45 0/45 0/45

7 PAGE 7 DEVICE RELIABILITY SUMMARY Marketing Part: CY7C425 Wafer Fab: Fab3 - Bloomington, MN Pkg Description: 28-pin, 300-mil PDIP 28-pin, 300-mil CDIP Temperature Cycle (Condition C, -65 C to 150 C), precondition 48 hours PCT (121 C, 100%RH) Device Assy Lot# Fab Lot# 300 Cycles 1000 Cycles 1000 Cycles Cumulative CY7C425-JC /46 0/46 0/46 Group C, Subgroup 1 Life test (150 C, 5.75V) Device Assy Lot# Fab Lot# 184 Hours Cumulative CY7C425-DMB /45 0/45 Autoclave (PCT, No bias, 121 C, 100%RH, 15psig), precondition 40 Temperature Cycles Device Assy Lot# Fab Lot# 168 Hours Cumulative CY7C425-JI /46 0/46 High Accelerated Saturation Test (HAST, 140 C, 5.5V, 85%RH), precondition 40 Temperature Cycles Device Assy Lot# Fab Lot# 128 Hours Cumulative CY7C425-PC /47 0/47

8 PAGE 8 DEVICE RELIABILITY SUMMARY Marketing Part: CY7C425 Wafer Fab: Fab3 - Bloomington, MN Pkg Description: 28-pin, 300-mil PDIP 28-pin, 300-mil CDIP Electrostatic Discharge Human Body Model Circuit per Mil Std 883, Method 3015 >+2,000V Unit 1 >-2,000V >+2,000V Unit 2 >-2,000V >+2,000V Unit 3 >-2,000V Charge Device Model >+2,000V Unit 1 >-2,000V >+2,000V Unit 2 >-2,000V >+2,000V Unit 3 >-2,000V Latchup Testing to Cypress Internal Latch-up Procedure 3 Tests: Current Injection = 200mA Trigger Hot Socket = VCC 0-8V Temp = 125 C Current Density Other miscellaneous tests Pass

9 PAGE 9 PREVIOUS QUALIFICATION DATA Device: 7C42X Cascadeable FIFOs Process ID: R21 CMOS Technology: CMOS 0.8µm Technology Process Location: Fab 1 - San Jose, CA Cypress Test No. Stress/Test Reference Method Actual Conditions Status * Qualification Data Reference Test Result Temp/Bias Hrs/Cyc SS/Fail Pass Fail 22 HTOL - EFR C/5.75V 12 Hrs 80 Hrs 0/1763 0/3053 C QTP# X 22A HTOL - LFR C/5.75V 168 Hrs 336 Hrs 36 High Temp. Bake/DRET 23 HAST C/5.5V 100 Hrs 200 Hrs 0/400 0/400 0/55 0/55 C QTP# X C QTP# X 24 Steam Test/Autoclave/PCT C,100%RH 15 psig 96 Hrs 288 Hrs 0/110 C QTP# X 1/ Temperature Cycle Cond. C --65C to 150C 100 Cycs 900 Cycs 1000 Cycs 37A HTSSL C, 5.75V 0/165 0/55 10/161 2 C QTP# X 20 Mechanical Sequence 26 X-Ray 6 ESD-HBM Corner Pins Internal Pins ---- C QTP# X 6 ESD-CDM Corner Pins Internal Pins ---- C QTP# X 33 Latch-up C QTP# X 50 Flammability & Oxygen Index 14 Moisture Resistance 9 Internal Water Vapor 2 Solvent Resistance 4 Internal Visual 1 Physical Dimensions 1 Assembly bonding problem 2 9 Assembly bonding defects, 1 Functional

10 PAGE 10 7 Lead Integrity 5 Bond Strength

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