Formation and Annihilation of Hydrogen-Related Donor States in Proton-Implanted and Subsequently Plasma-Hydrogenated N-Type Float-Zone Silicon
|
|
- Norma Hensley
- 6 years ago
- Views:
Transcription
1 Formation and Annihilation of Hydrogen-Related Donor States in Proton-Implanted and Subsequently Plasma-Hydrogenated N-Type Float-Zone Silicon Reinhart Job, University of Hagen, Germany Franz-Josef Niedernostheide, Infineon Technologies AG, Germany Hans-Joachim Schulze, Infineon Technologies AG, Germany Holger Schulze, Infineon Technologies Austria AG, Austria High-Purity-Silicon X, PRIME 2008, Joint International Meeting 214th Meeting of the ECS The Electrochemical Society 2008 Fall Meeting of The Electrochemical Society of Japan Honolulu, HI, USA, Oct. 12 th 17 th, 2008
2 Outline of the talk Introduction Experimental details Results and discussion Summary Folie 2
3 Outline of the talk Introduction Experimental details Results and discussion Summary Folie 3
4 Introduction Light ion implantation (H +, He + ): useful tool in semiconductor technology can modify semiconductor properties can influence a wide spatial range within the semiconductor Applications of light ion implantation: H + -, He + -implantation: charge carrier lifetime control H + -implantation: formation of hydrogen related donors after post-implantation annealing procedures Attractive for high-power device technology: formation of deep n-type doped layers penetration depth at a given energy higher than for standard donors (P) proton induced doping requires moderate thermal annealing regimes Folie 4
5 Introduction In this presentation: investigation of two-step processes in FZ Si wafers successive H + -implantation and H-plasma treatments (temperatures during H-plasma exposures: up to 500 C) formation and annihilation of n-type doping profiles Folie 5
6 Outline of the talk Introduction Experimental details Results and discussion Summary Folie 6
7 Experimental details Substrates: - n-type float zone (FZ) silicon wafer, (100)-oriented - ρ = 30 Ωcm, phosphorous doped H + -implantation: - shallow implantation: E = 1 MeV, R p 16.5 µm* D = 1 cm -2 - deep implantation: E = 3 MeV, R p 92.8 µm* D = 1 cm -2 H-plasma: - RF generator: ν = MHz - plasma power: P Pl = 150 W -H 2 -flux: F H2 = 50 sccm - Ar-flux*: F Ar = 50 sccm - chamber pressure: p = mbar - process temperatures: T S = 350, 400, 450, 500 C Analyses: - two-point-probe spreading resistance measurements * projected ion ranges R p (SRIM 2008 simulations with full damage cascades) Folie 7
8 Outline of the talk Introduction Experimental details Results and discussion Summary Folie 8
9 Spreading resistance analyses H + -implantation: E = 1 MeV D = 1 cm -2 H-plasma treatment at various substrate temperatures: C C C C t = 15 min Spreading Resistance (Ohm) H + -Implantation & 15 min H-Plasma 500 C 450 C 400 C 350 C 10 5 Folie
10 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 15 min H-Plasma 500 C Transformation of SR profiles into doping concentration profiles Spreading Resistance (Ohm) H + -Implantation & 15 min H-Plasma C 450 C 400 C 350 C 450 C 400 C 350 C Folie 10
11 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 15 min H-Plasma 500 C Region deeper than R p : initial n-type doping concentration 450 C of untreated FZ Si material Region close to R p : surplus n-type doping n-type doping concentration 400 C enhanced by one order of magnitude 10 Region towards R p (up to 15 µm 14 depth): 350 C surplus n-type doping profile follows implantation damage profile vacancy concentration profile Folie 11
12 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 15 min H-Plasma 500 C Region deeper than R p : initial n-type doping concentration 450 C of untreated FZ Si material Region close to R p : surplus n-type doping n-type doping concentration 400 C enhanced by one order of magnitude 10 Region towards R p (up to 15 µm 14 depth): 350 C surplus n-type doping profile follows implantation damage profile vacancy concentration profile Folie 12
13 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 15 min H-Plasma 500 C Region deeper than R p : initial n-type doping concentration 450 C of untreated FZ Si material Region close to R p : surplus n-type doping n-type doping concentration 400 C enhanced by one order of magnitude 10 Region towards R p (up to 15 µm 14 depth): 350 C surplus n-type doping profile follows implantation damage profile vacancy concentration profile Folie 13
14 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 15 min H-Plasma 500 C Region close to the surface: n-type doping is a bit enhanced 450 C (factor of 2) for H-plasma treatment at 350 C and 400 C Region towards the surface: n-type doping towards the surface 400 C more stronger enhanced at 450 C and 500 C 10 Region close to the surface: 14 doping concentration reduced 350 C (H-plasma at 450 C) doping concentration below initial doping n-type level (H-plasma at 500 C) Folie 14
15 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 15 min H-Plasma 500 C Region close to the surface: n-type doping is a bit enhanced 450 C (factor of 2) for H-plasma treatment at 350 C and 400 C Region towards the surface: n-type doping towards the surface 400 C more stronger enhanced at 450 C and 500 C 10 Region close to the surface: 14 doping concentration reduced 350 C (H-plasma at 450 C) doping concentration below initial doping n-type level (H-plasma at 500 C) Folie 15
16 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 15 min H-Plasma 500 C Region close to the surface: n-type doping is a bit enhanced 450 C (factor of 2) for H-plasma treatment at 350 C and 400 C Region towards the surface: n-type doping towards the surface 400 C more stronger enhanced at 450 C and 500 C 10 Region close to the surface: 14 doping concentration reduced 350 C (H-plasma at 450 C) doping concentration below initial doping n-type level (H-plasma at 500 C) Folie 16
17 Spreading resistance analyses H + -Implantation & 15 min H-Plasma 500 C Conclusions (I): Region near R p : hydrogen-related shallow donor formation occurs vacancies play a significant role excessive donor concentration vacancy-hydrogen-complexes 450 C 400 C 350 C Folie 17
18 Spreading resistance analyses H + -Implantation & 15 min H-Plasma 500 C Conclusions (II): Region towards the surface: vacancies diffuse towards the surface during plasma exposure at elevated temperatures enhanced vacancy concentration toward the surface vacancy-hydrogen-complexes excessive donor concentration 450 C 400 C 350 C Folie 18
19 Spreading resistance analyses H + -Implantation & 15 min H-Plasma 500 C Conclusions (III): Region close to the surface (I): formation of acceptor-like defect complexes acceptor-like defect complexes are passivated by hydrogen at lower temperatures at higher temperatures acceptorlike defect complexes become electrically active again compensation of n-type doping 450 C 400 C 350 C Folie 19
20 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 60 min H-Plasma 500 C H + -implantation: E = 1 MeV D = 1 cm -2 H-plasma treatment at various substrate temperatures: C C C C t = 60 min 450 C 400 C 350 C Folie
21 Spreading resistance analyses Faculty of Mathematics and Computer Science H + -Implantation & 60 min H-Plasma 500 C Donor states in the subsurface region down to R p disappeared initial homogeneous doping concentration is re-established However, close to the surface n-type doping compensated for by acceptor-like defects 450 C 400 C 350 C Folie
22 Spreading resistance analyses H + -Implantation & 60 min H-Plasma 500 C Donor states in the subsurface region down to R p disappeared initial homogeneous doping concentration is re-established However, close to the surface n-type doping compensated for by acceptor-like defects 450 C 400 C 350 C Folie
23 Spreading resistance analyses No H + -implantation Only 60 min H-plasma treatment at 400 C substrate temperature No formation of doping profiles! Similar results for H-plasma exposure at other substrate temperatures up to 500 C Doping Concentration (cm -3 ) 60 min H-Plasma (400 C) (no implantation) Folie 23
24 Spreading resistance analyses No H + -implantation Only 60 min H-plasma treatment at 400 C substrate temperature No formation of doping profiles! Similar results for H-plasma exposure at other substrate temperatures up to 500 C Doping Concentration (cm -3 ) 60 min H-Plasma (400 C) (no implantation) Acceptor-like defects can not be attributed to plasma damage alone! vacancies must be involved!!! Folie 24
25 Spreading resistance analyses H + -Implantation & 60 min H-Plasma 500 C Conclusion: strong injection of hydrogen during long-term plasma treatment transformation of vacancyand hydrogen-related donor states into electrically inactive defects, e. g. V-H 4 acceptor-like defects near the surface hydrogenated vacancy or multi-vacancy complexes, e. g. V 2 -H 2 (?) 450 C 400 C 350 C Folie
26 Spreading resistance analyses 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma Deep H + -implantation: E = 3 MeV D = 1 cm -2 H-plasma treatment at 400 C substrate temperature for various duration: - t = 15 min (above) - t = 60 min (below) min H-Plasma Folie 26
27 Spreading resistance analyses 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma Region close to R p : surplus n-type doping caused by vacancy-hydrogen-complexes (15 min H-plasma exposure) Region at 30 µm 85 µm depth: strong reduction of n-type carrier concentration implantation damage (15 min H-plasma exposure) min H-Plasma Folie 27
28 Spreading resistance analyses 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma Region close to R p : surplus n-type doping caused by vacancy-hydrogen-complexes (15 min H-plasma exposure) Region at 30 µm 85 µm depth: strong reduction of n-type carrier concentration implantation damage (15 min H-plasma exposure) min H-Plasma Folie 28
29 Spreading resistance analyses Region down to 30 µm depth: indiffusing hydrogen passivates implantation damage toward the surface: initial doping level recovered (15 min H-plasma exposure) surplus n-type doping profile follows the vacancy concentration profile vacancy-hydrogen-defects (15 min H-plasma exposure) at the surface weak reduction of the n-type doping acceptor-like defect states (15 min H-plasma exposure) Faculty of Mathematics and Computer Science 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma min H-Plasma Folie 29
30 Spreading resistance analyses Region down to 30 µm depth: indiffusing hydrogen passivates implantation damage toward the surface: initial doping level recovered (15 min H-plasma exposure) surplus n-type doping profile follows the vacancy concentration profile vacancy-hydrogen-defects (15 min H-plasma exposure) at the surface weak reduction of the n-type doping acceptor-like defect states (15 min H-plasma exposure) Faculty of Mathematics and Computer Science 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma min H-Plasma Folie 30
31 Spreading resistance analyses Region down to 30 µm depth: indiffusing hydrogen passivates implantation damage toward the surface: initial doping level recovered (15 min H-plasma exposure) surplus n-type doping profile follows the vacancy concentration profile vacancy-hydrogen-defects (15 min H-plasma exposure) at the surface weak reduction of the n-type doping acceptor-like defect states (15 min H-plasma exposure) Faculty of Mathematics and Computer Science 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma min H-Plasma Folie 31
32 Spreading resistance analyses Region close to R p : surplus n-type doping caused by vacancy-hydrogen-complexes (60 min H-plasma exposure) Subsurface region down to R p : indiffusing hydrogen passivates implantation damage (V-H 4 ) initial n-type doping level (60 min H-plasma exposure) surplus n-type doping follows vacancy concentration profile Close to the surface: acceptor-like defect states compensate for n-type doping (60 min H-plasma exposure) 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma min H-Plasma Folie 32
33 Spreading resistance analyses Region close to R p : surplus n-type doping caused by vacancy-hydrogen-complexes (60 min H-plasma exposure) Subsurface region down to R p : indiffusing hydrogen passivates implantation damage (V-H 4 ) initial n-type doping level surplus n-type doping follows vacancy concentration profile (60 min H-plasma exposure) Close to the surface: acceptor-like defect states compensate for n-type doping (60 min H-plasma exposure) 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma min H-Plasma Folie 33
34 Spreading resistance analyses Region close to R p : surplus n-type doping caused by vacancy-hydrogen-complexes (60 min H-plasma exposure) Subsurface region down to R p : indiffusing hydrogen passivates implantation damage (V-H 4 ) initial n-type doping level (60 min H-plasma exposure) surplus n-type doping follows vacancy concentration profile Close to the surface: acceptor-like defect states compensate for n-type doping (60 min H-plasma exposure) 3 MeV H + -Implantation & H-Plasma (400 C) min H-Plasma min H-Plasma Folie 34
35 Outline of the talk Introduction Light ion implantation into silicon Plasma hydrogenation of silicon Hydrogen related donor states in silicon Experimental details Sample preparation Experimental analyses Results and discussion Formation of doping profiles by H + -implantation and subsequent plasma hydrogenation at elevated temperatures Mechanisms of donor states formation Summary Folie 35
36 Summary Influence of plasma hydrogenation on H + -implanted FZ Si was studied Analysis as done be means of spreading resistance measurements It was observed that surplus n-type doping occurs near R p (one order of magnitude above the initial doping level) surplus n-type doping occurs also towards the wafer surface for 15 min H-plasma exposure (less strong) surface acts as a getter center for vacancies hydrogenated vacancy defect complexes are responsible for surplus n-type doping in the subsurface layer down to R p near the surface (down to a depth of 2 µm) acceptor-like states were created, which compensate for the n-type doping acceptor-like defect states can be attributed to (multi-) vacancyhydrogen complexes Folie 36
37 Acknowledgements The technical support of Mrs. Renate Bommersbach (Infineon Technologies AG, Munich) & Mr. Josef Niedermeyr (Infineon Technologies AG, Munich) is gratefully acknowledged. Folie 37
Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
Solid State Phenomena Vols. 131-133 (2008) pp. 201-206 online at http://www.scientific.net (2008) Trans Tech Publications, Switzerland Online available since 2007/10/25 Radiation Defects and Thermal Donors
More informationControlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation. Pavel Hazdra and Jan Vobecký
Solid State Phenomena Online: 2003-09-30 ISSN: 1662-9779, Vols. 95-96, pp 559-564 doi:10.4028/www.scientific.net/ssp.95-96.559 Journal Citation (to be inserted by the publisher) Copyright 2004 Trans by
More informationIron in crystalline silicon solar cells: fundamental properties, detection techniques, and gettering
Iron in crystalline silicon solar cells: fundamental properties, detection techniques, and gettering Daniel Macdonald, AnYao Liu, and Sieu Pheng Phang Research School of Engineering The Australian National
More informationFuture technologies for electrical isolation of III-V Semiconductor devices
Future technologies for electrical isolation of III-V Semiconductor devices Contents The project... 1 Description of results... 2 GaAs based materials... 2 InP based materials... 4 Other experiments...
More informationECE 440 Lecture 27 : Equilibrium P-N Junctions I Class Outline:
ECE 440 Lecture 27 : Equilibrium P-N Junctions I Class Outline: Fabrication of p-n junctions Contact Potential Things you should know when you leave Key Questions What are the necessary steps to fabricate
More informationLow temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS VOLUME 83, NUMBER 4 15 FEBRUARY 1998 Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition Youngboo Moon, Sangkee
More informationCrystalline Silicon Technologies
Crystalline Silicon Technologies in this web service in this web service Mater. Res. Soc. Symp. Proc. Vol. 1210 2010 Materials Research Society 1210-Q01-01 Hydrogen Passivation of Defects in Crystalline
More informationHydrogen in Crystalline Semiconductors r
S.J. Pearton J.W Corbett M. Stavola Hydrogen in Crystalline Semiconductors r ' With 250 Figures Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Hong Kong Barcelona Budapest Contents 1. Introduction
More informationPOWER DEVICES AND SENSORS
POWER DEVICES AND SENSORS (AG Leistungsbauelemente und Sensorik) apl. Prof. Dr. rer. nat. Reinhart Job Universitätsstr. 27 (PRG) D-58084 Hagen Tel. +49 (0)2331 987-1183 Fax: +49 (0)2331 987-4105 E-Mail:
More informationAbstract. Introduction
Light Induced Degradation in Manufacturable Multi-crystalline Silicon Solar Cells Ben Damiani, Mohamed Hilali, and Ajeet Rohatgi University Center of Excellence for Photovoltaics Research Georgia Institute
More informationContents. Abbreviations and Symbols... 1 Introduction... 1
Contents Abbreviations and Symbols... XIII 1 Introduction... 1 2 Experimental Techniques... 5 2.1 Positron Sources... 7 2.2 Positron Lifetime Spectroscopy... 9 2.2.1 Basics of the Measurement... 10 2.2.2
More informationDoping and Oxidation
Technische Universität Graz Institute of Solid State Physics Doping and Oxidation Franssila: Chapters 13,14, 15 Peter Hadley Technische Universität Graz Institute of Solid State Physics Doping Add donors
More informationFast recovery Radiation Enhanced Diffusion (RED) Diode:
Fast recovery Radiation Enhanced Diffusion (RED) Diode: Palladium versus Platinum J. Vobecký 1,2, V. Záhlava 2, V. Komarnitskyy 2 1 ABB SWITZERLAND Ltd. SEMICONDUCTORS Fabrikstrasse 3, CH-5600 Lenzburg,
More informationR Sensor resistance (Ω) ρ Specific resistivity of bulk Silicon (Ω cm) d Diameter of measuring point (cm)
4 Silicon Temperature Sensors 4.1 Introduction The KTY temperature sensor developed by Infineon Technologies is based on the principle of the Spreading Resistance. The expression Spreading Resistance derives
More informationFuture technologies for the electrical isolation of III-V semiconductor devices. Final report on grant no. GR/N32969 (including GR/S52797/01)
Future technologies for the electrical isolation of III-V semiconductor devices Final report on grant no. GR/N32969 (including GR/S52797/01) Introduction This report, which summarises the work done by
More informationImplant Metrology for Bonded SOI Wafers Using a Surface Photo-Voltage Technique
Implant Metrology for Bonded SOI Wafers Using a Surface Photo-Voltage Technique Adam Bertuch a, Wesley Smith a, Ken Steeples a, Robert Standley b, Anca Stefanescu b, and Ron Johnson c a QC Solutions Inc.,
More informationJunction formation in Ge by coimplant. and pre-heating techniques
Junction formation in Ge by coimplant. and pre-heating techniques Takashi Kuroi Nissin Ion Equipment Co., Ltd. 0 Content Introduction Purpose and Motivation Experimental Acceptor impurity implanted Germanium
More informationNuclear Instruments and Methods in Physics Research B 253 (2006)
Nuclear Instruments and Methods in Physics Research B 53 () 17 191 NIM B Beam Interactions with Materials & Atoms www.elsevier.com/locate/nimb Thermal donor formation in silicon enhanced by high-energy
More informationDevelopment of Particle Detectors made of Czochralski Grown Silicon
Development of Particle Detectors made of Czochralski Grown Silicon Helsinki Institute of Physics, CERN/EP, Switzerland Microelectronics Centre, Helsinki University of Technology, Finland Okmetic Ltd.,
More informationBehaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers
Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers Daniel Macdonald 1,a, Thomas Roth 1,b, L. J. Geerligs 2,c and Andres Cuevas 1,d 1 Department of Engineering,
More informationChapter 3 Silicon Device Fabrication Technology
Chapter 3 Silicon Device Fabrication Technology Over 10 15 transistors (or 100,000 for every person in the world) are manufactured every year. VLSI (Very Large Scale Integration) ULSI (Ultra Large Scale
More informationExtended defects in semiconductors studied by positron annihilation
Colloquium DES Poitiers 2003 Extended defects in semiconductors studied by positron annihilation Hartmut S. Leipner Interdisziplinäres Zentrum für Materialwissenschaften Martin-Luther-Universität Halle
More informationOxidation induced precipitation in Al implanted epitaxial silicon
JOURNAL OF APPLIED PHYSICS VOLUME 88, NUMBER 7 1 OCTOBER 2000 Oxidation induced precipitation in Al implanted epitaxial silicon A. La Ferla, G. Galvagno, P. K. Giri, G. Franzò, and E. Rimini Dipartimento
More informationCHAPTERS SUMMARY OF RESULTS
CHAPTERS SUMMARY OF RESULTS Aluminium diffusion was investigated by NRA in five different semiconductors. Different experimental methods were employed. For in-diffusion investigation thin aluminium films
More informationHydrogen isotope retention in W irradiated by heavy ions and helium plasma
Hydrogen isotope retention in W irradiated by heavy ions and helium plasma M. Sakamoto, H. Tanaka, S. Ino, H. Watanabe 1, M. Tokitani 2, R. Ohyama 3, A. Rusinov 3 and N. Yoshida 1 Plasma Research Center,
More informationAIST, 2 CREST/AIST, 3 Univ. Of Tsukuba
A. Traoré 1, A. Nakajima 1, T. Makino 1,2, D. Kuwabara 1,2,3, H. Kato 1,2, M. Ogura 1,2, D. Takeuchi 1,2, and S. Yamasaki 1,2,3 1 AIST, 2 CREST/AIST, 3 Univ. Of Tsukuba aboulaye.traore@aist.go.jp Diamond
More informationPresented at the 32nd European PV Solar Energy Conference and Exhibition, June 2016, Munich, Germany
IMPACT OF HIGH-TEMPERATURE PROCESSES ON CARRIER LIFETIME OF N-TYPE CZ SILICON S. Werner 1, A. Wolf 1, S. Mack 1, E. Lohmüller 1, R.C.G. Naber 2 1 Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße
More informationSURFACE PASSIVATION STUDY ON GETTERED MULTICRYSTALLINE SILICON
Erschienen in: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 213) ; Paris, France ; conference 3 September - 4 October 213. - München : WIP, 213. - S. 143-147.
More informationProperties and Barrier Material Interactions of Electroless Copper used for Seed Enhancement
Mat. Res. Soc. Symp. Proc. Vol. 766 2003 Materials Research Society E1.4.1 Properties and Barrier Material Interactions of Electroless Copper used for Seed Enhancement C. Witt a,b,k.pfeifer a,c a International
More informationSilicon Wafer Processing PAKAGING AND TEST
Silicon Wafer Processing PAKAGING AND TEST Parametrical test using test structures regularly distributed in the wafer Wafer die test marking defective dies dies separation die fixing (not marked as defective)
More informationChange in stoichiometry
Measurement of Gas Sensor Performance Gas sensing materials: 1. Sputtered ZnO film (150 nm (Massachusetts Institute of Technology) 2. Sputtered SnO 2 film (60 nm) (Fraunhofer Institute of Physical Measurement
More informationBoron Back Surface Field Using Spin-On Dopants by Rapid Thermal Processing
Journal of the Korean Physical Society, Vol. 44, No. 6, June 2004, pp. 1581 1586 Boron Back Surface Field Using Spin-On Dopants by Rapid Thermal Processing Ji Youn Lee Photovoltaics R&D Center, Sung Jin
More informationMeasuring of doping profiles with Spreading Resistance Profiling. Wolfgang Treberspurg (HEPHY Vienna)
Measuring of doping profiles with Spreading Resistance Profiling Wolfgang Treberspurg (HEPHY Vienna) 17. Oktober 2011 Wolfgang Treberspurg 2 1. Background: Motivation Background Silicon Sensors in Collider
More informationFigure 2.3 (cont., p. 60) (e) Block diagram of Pentium 4 processor with 42 million transistors (2000). [Courtesy Intel Corporation.
Figure 2.1 (p. 58) Basic fabrication steps in the silicon planar process: (a) oxide formation, (b) selective oxide removal, (c) deposition of dopant atoms on wafer, (d) diffusion of dopant atoms into exposed
More informationImpact of electron irradiation on N- and O-enriched FZ silicon p-in-n pad detectors
Impact of electron irradiation on N- and O-enriched FZ silicon p-in-n pad detectors K. Lauer 1, X. Xu 1, D. Karolewski 1, U. Gohs 2, M. Kwestarz 3, P. Kaminski 4, R. Täschner 1, T. Klein 1, T. Wittig 1,
More informationHydrogen in Semiconductors
Hydrogen in Semiconductors SEMICONDUCTORS AND SEMIMETALS Volume 34 Volume Editors JACQUES I. PANKOVE UNIVERSITY OF COLORADO AT BOULDER BOULDER, COLORADO NOBLE M. JOHNSON XEROX PALO ALTO RESEARCH CENTER
More informationPreliminary Results of the CiS-HH SRD Project G. Lindström*, E. Fretwurst*, I. Pintilie, R. Röder, J. Stahl*
Preliminary Results of the CiS-HH SRD Project G. Lindström*, E. Fretwurst*, I. Pintilie, R. Röder, J. Stahl* * Uni-Hamburg, guest from NIMP, Bucharest, CiS Institute for Microsensors, Erfurt Optimization
More informationProcess steps for Field Emitter devices built on Silicon wafers And 3D Photovoltaics on Silicon wafers
Process steps for Field Emitter devices built on Silicon wafers And 3D Photovoltaics on Silicon wafers David W. Stollberg, Ph.D., P.E. Research Engineer and Adjunct Faculty GTRI_B-1 Field Emitters GTRI_B-2
More informationProcess Flow in Cross Sections
Process Flow in Cross Sections Process (simplified) 0. Clean wafer in nasty acids (HF, HNO 3, H 2 SO 4,...) --> wear gloves! 1. Grow 500 nm of SiO 2 (by putting the wafer in a furnace with O 2 2. Coat
More informationInfluence of Temperature on Light Induced Phenomena in Multicrystalline Silicon
Influence of Temperature on Light Induced Phenomena in Multicrystalline Silicon Axel Herguth a), Philipp Keller b) and Noemi Mundhaas c) University of Konstanz, Department of Physics, 78457 Konstanz, Germany
More informationComparison of different electrochemical deposits for contact metallization of silicon solar cells
Metallization Workshop October 1 st 2008 Utrecht Comparison of different electrochemical deposits for contact metallization of silicon solar cells Caroline Boulord Overview I Ni-P Electroless Deposition
More informationAvailable online at ScienceDirect. Energy Procedia 55 (2014 )
Available online at www.sciencedirect.com ScienceDirect Energy Procedia 55 (2014 ) 827 833 4th International Conference on Silicon Photovoltaics, SiliconPV 2014 Hydrogen plasma treatments of amorphous/crystalline
More informationInductive Coupled Plasma (ICP) Textures as Alternative for Wet Chemical Etching in Solar Cell Fabrication
Inductive Coupled Plasma (ICP) Textures as Alternative for Wet Chemical Etching in Solar Cell Fabrication 1 Motivation 2 Experimental setup 3 ICP textures as alternative technique 3.1 Surface morphology
More informationCHAPTER 4: Oxidation. Chapter 4 1. Oxidation of silicon is an important process in VLSI. The typical roles of SiO 2 are:
Chapter 4 1 CHAPTER 4: Oxidation Oxidation of silicon is an important process in VLSI. The typical roles of SiO 2 are: 1. mask against implant or diffusion of dopant into silicon 2. surface passivation
More informationElectrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure
JOURNAL OF APPLIED PHYSICS 99, 033506 2006 Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure Irina V. Antonova a Institute
More informationMethod to obtain TEOS PECVD Silicon Oxide Thick Layers for Optoelectronics devices Application
Method to obtain TEOS PECVD Silicon Oxide Thick Layers for Optoelectronics devices Application ABSTRACT D. A. P. Bulla and N. I. Morimoto Laboratório de Sistemas Integráveis da EPUSP São Paulo - S.P. -
More informationUltrafast carrier trapping and recombination in highly resistive ion implanted InP
JOURNAL OF APPLIED PHYSICS VOLUME 94, NUMBER 2 15 JULY 2003 Ultrafast carrier trapping and recombination in highly resistive ion implanted InP C. Carmody, a) H. H. Tan, and C. Jagadish Department of Electronic
More informationFIBRE-COUPLED HIGH-INDEX PECVD SILICON- OXYNITRIDE WAVEGUIDES ON SILICON
FIBRE-COUPLED HIGH-INDEX PECVD SILICON- OXYNITRIDE WAVEGUIDES ON SILICON Maxim Fadel and Edgar Voges University of Dortmund, High Frequency Institute, Friedrich-Woehler Weg 4, 44227 Dortmund, Germany ABSTRACT
More informationPROCESS FLOW AN INSIGHT INTO CMOS FABRICATION PROCESS
Contents: VI Sem ECE 06EC63: Analog and Mixed Mode VLSI Design PROCESS FLOW AN INSIGHT INTO CMOS FABRICATION PROCESS 1. Introduction 2. CMOS Fabrication 3. Simplified View of Fabrication Process 3.1 Alternative
More informationI. GaAs Material Properties
I. GaAs Material Properties S. Kayali GaAs is a III V compound semiconductor composed of the element gallium (Ga) from column III and the element arsenic (As) from column V of the periodic table of the
More informationLarge area silicon epitaxy using pulsed DC magnetron sputtering deposition
Large area silicon epitaxy using pulsed DC magnetron sputtering deposition Pascale Plantin, Fatiha Challali, Olivier Carriot, Frédéric Lainat, Michel Ancilotti, Gérard Gadot, Pascal Brault To cite this
More informationQuarterly Report EPRI Agreement W
Quarterly Report EPRI Agreement W08069-07 PI: S.J. Pearton, University of Florida (Co-investigators F. Ren, C.R. Abernathy, R.K. Singh, P.H. Holloway, T.J. Anderson, M. Berding, A. Sher, S. Krishnimurthy,
More informationDefect annealing in 4H-SiC
Defect annealing in 4H-SiC A. Castaldini 1, A. Cavallini 1, L. Rigutti 1, F. Nava 2 1 INFM and Dipartimento di Fisica, Università di Bologna, Bologna, IT 2 INFN and Dipartimento di Fisica, Università di
More informationIMEC, LEUVEN, BELGIUM, 2 KU LEUVEN, BELGIUM, 3 U HASSELT, BELGIUM
INVESTIGATION OF RADIATION DAMAGE OF CU PLATED IBC CELLS CAUSED BY SPUTTERING OF SEED LAYER SUKHVINDER SINGH 1, BARRY O SULLIVAN 1, SHRUTI JAMBALDINNI 1, MAARTEN DEBUCQUOY 1 AND JEF POORTMANS 1,2,3 1 IMEC,
More information1. Introduction. What is implantation? Advantages
Ion implantation Contents 1. Introduction 2. Ion range 3. implantation profiles 4. ion channeling 5. ion implantation-induced damage 6. annealing behavior of the damage 7. process consideration 8. comparison
More informationCharacteristics of HfO 2 pmosfet with Ultrashallow Junction Prepared by Plasma Doping and Laser Annealing
Characteristics of HfO 2 pmosfet with Ultrashallow Junction Prepared by Plasma Doping and Laser Annealing Sungkweon Baek, Sungho Heo, and Hyunsang Hwang Dept. of Materials Science and Engineering Kwangju
More informationIsolation of elements
1 In an IC, devices on the same substrate must be isolated from one another so that there is no current conduction between them. Isolation uses either the junction or dielectric technique or a combination
More informationEffective Mg activation for p-type GaN in mixed gas ambient of oxygen and nitrogen Wei Lu 1,2, David Aplin 2, A. R. Clawson 2 and Paul K. L.
Effective Mg activation for p-type GaN in mixed gas ambient of oxygen and nitrogen Wei Lu 1,2, David Aplin 2, A. R. Clawson 2 and Paul K. L. Yu 2 1 Zhejiang University, Zhejiang, PRC 2 Calit2, University
More informationTHERMAL OXIDATION - Chapter 6 Basic Concepts
THERMAL OXIDATION - Chapter 6 Basic Concepts SiO 2 and the Si/SiO 2 interface are the principal reasons for silicon s dominance in the IC industry. Oxide Thickness µm 0. µm 0 nm nm Thermally Grown Oxides
More informationREAR SURFACE PASSIVATION OF INTERDIGITATED BACK CONTACT SILICON HETEROJUNCTION SOLAR CELL AND 2D SIMULATION STUDY
REAR SURFACE PASSIVATION OF INTERDIGITATED BACK CONTACT SILICON HETEROJUNCTION SOLAR CELL AND 2D SIMULATION STUDY Meijun Lu 1,2, Ujjwal Das 1, Stuart Bowden 1, and Robert Birkmire 1,2 1 Institute of Energy
More informationCrystalline Silicon Solar Cells With Two Different Metals. Toshiyuki Sameshima*, Kazuya Kogure, and Masahiko Hasumi
Crystalline Silicon Solar Cells With Two Different Metals Toshiyuki Sameshima*, Kazuya Kogure, and Masahiko Hasumi Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588,
More informationCharacterization and erosion of metal-containing carbon layers
Characterization and erosion of metal-containing carbon layers Martin Balden Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching, Germany Materials Research Division (MF) Outline
More informationOptically Assisted Metal-Induced Crystallization of Thin Si Films for Low-Cost Solar Cells
Optically Assisted Metal-Induced Crystallization of Thin Si Films for Low-Cost Solar Cells Wei Chen, Bhushan Sopori, Kim Jones, and Robert Reedy, National Renewable Energy Laboratory, Golden, CO; N. M.
More informationA Nano-thick SOI Fabrication Method
A Nano-thick SOI Fabrication Method C.-H. Huang 1, J.T. Cheng 1, Y.-K. Hsu 1, C.-L. Chang 1, H.-W. Wang 1, S.-L. Lee 1,2, and T.-H. Lee 1,2 1 Dept. of Mechanical Engineering National Central University,
More informationAn advantage of thin-film silicon solar cells is that they can be deposited on glass substrates and flexible substrates.
ET3034TUx - 5.2.1 - Thin film silicon PV technology 1 Last week we have discussed the dominant PV technology in the current market, the PV technology based on c-si wafers. Now we will discuss a different
More informationLifetime Enhancement and Low-Cost Technology Development for High-Efficiency Manufacturable Silicon Solar Cells. A. Rohatgi, V. Yelundur, J.
Lifetime Enhancement and Low-Cost Technology Development for High-Efficiency Manufacturable Silicon Solar Cells A. Rohatgi, V. Yelundur, J. Jeong University Center of Excellence for Photovoltaics Research
More informationET3034TUx High efficiency concepts of c- Si wafer based solar cells
ET3034TUx - 4.4 - High efficiency concepts of c- Si wafer based solar cells In the previous block we have discussed various technological aspects on crystalline silicon wafer based PV technology. In this
More informationDefense Technical Information Center Compilation Part Notice
UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADPO 11871 TITLE: Annealing of GaSb Single Crystals in lonised Hydrogen Atmosphere DISTRIBUTION: Approved for public release, distribution
More information2. High Efficiency Crystalline Si Solar Cells
2 High Efficiency Crystalline Si Solar Cells Students: Karthick Murukesan, Sandeep S S, Meenakshi Bhaisare, Bandana Singha, Kalaivani S and Ketan Warikoo Faculty members: Anil Kottantharayil, B M Arora,
More informationFeature-level Compensation & Control. Workshop April 15, 2004 A UC Discovery Project
Feature-level Compensation & Control Workshop April 15, 2004 A UC Discovery Project 2 Diffusion in Silicon Germanium Alloys UC-DISCOVERY/ Workshop April 15, 2004 Hughes Silvestri, 1,2 Hartmut Bracht, 3
More informationEvolution of Wafer Warpage and Lattice Level Stress of Silicon Wafers with Through Silicon Via Structures along Various Process Integration Steps
Evolution of Wafer Warpage and Lattice Level Stress of Silicon Wafers with Through Silicon Via Structures along Various Process Integration Steps Woo Sik Yoo WaferMasters, Inc. 246 East Gish Road, San
More informationChapter 3 CMOS processing technology
Chapter 3 CMOS processing technology (How to make a CMOS?) Si + impurity acceptors(p-type) donors (n-type) p-type + n-type => pn junction (I-V) 3.1.1 (Wafer) Wafer = A disk of silicon (0.25 mm - 1 mm thick),
More informationExtended Abstracts of the Sixth International Workshop on Junction Technology
IWJT-2006 Extended Abstracts of the Sixth International Workshop on Junction Technology May.15-16, 2006, Shanghai, China Editors: Yu-Long Jiang, Guo-Ping Ru, Xin-Ping Qu, and Bing-Zong Li IEEE Press IEEE
More informationCHAPTER 8: Diffusion. Chapter 8
1 CHAPTER 8: Diffusion Diffusion and ion implantation are the two key processes to introduce a controlled amount of dopants into semiconductors and to alter the conductivity type. Figure 8.1 compares these
More informationFRONT END PROCESSES - CLEANING, LITHOGRAPHY, OXIDATION ION IMPLANTATION, DIFFUSION, DEPOSITION AND ETCHING
Manufacturing, Cleaning, Gettering - Chapter 4 FRONT END PROCESSES - CLEANING, LITHOGRAPHY, OXIDATION ION IMPLANTATION, DIFFUSION, DEPOSITION AND ETCHING Over the next several weeks, we ll study front
More informationCorrelation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS Vol. 15, No. 4, pp. 207-212, August 25, 2014 Regular Paper pissn: 1229-7607 eissn: 2092-7592 DOI: http://dx.doi.org/10.4313/teem.2014.15.4.207 Correlation
More informationMicrostructure of Electronic Materials. Amorphous materials. Single-Crystal Material. Professor N Cheung, U.C. Berkeley
Microstructure of Electronic Materials Amorphous materials Single-Crystal Material 1 The Si Atom The Si Crystal diamond structure High-performance semiconductor devices require defect-free crystals 2 Crystallographic
More informationDamage buildup in GaN under ion bombardment
PHYSICAL REVIEW B VOLUME 62, NUMBER 11 15 SEPTEMBER 2000-I Damage buildup in GaN under ion bombardment S. O. Kucheyev,* J. S. Williams, and C. Jagadish Department of Electronic Materials Engineering, Research
More informationCzochralski Crystal Growth
Czochralski Crystal Growth Crystal Pulling Crystal Ingots Shaping and Polishing 300 mm wafer 1 2 Advantage of larger diameter wafers Wafer area larger Chip area larger 3 4 Large-Diameter Wafer Handling
More informationImpacts of Back Grind Damage on Si Wafer Thinning for 3D Integration
Impacts of Back Grind Damage on Si Wafer Thinning for 3D Integration Tomoji Nakamura, Yoriko Mizushima, Young-suk Kim, Akira Uedono, and Takayuki Ohba Fujitsu Laboratories Ltd., University of Tsukuba Tokyo
More informationPre-treatment of low temperature GaN buffer layer deposited on AlN Si substrate by hydride vapor phase epitaxy
Ž. Surface and Coatings Technology 131 000 465 469 Pre-treatment of low temperature GaN buffer layer deposited on AlN Si substrate by hydride vapor phase epitaxy Ha Jin Kim, Ho-Sun Paek, Ji-Beom Yoo Department
More informationPresented at the 28th European PV Solar Energy Conference and Exhibition, 30 Sept October 2013, Paris, France
A NOVEL APPROACH TO HIGH PERFORMANCE AND COST EFFECTIVE SURFACE CLEANING FOR HIGH EFFICIENCY SOLAR CELLS A. Moldovan 1A, M. Zimmer 1, J.Rentsch 1, B.Ferstl 2, S.Rajagopalan 2, S.Thate 2, J.Hoogboom 2,
More informationGraduate Student Presentations
Graduate Student Presentations Dang, Huong Chip packaging March 27 Call, Nathan Thin film transistors/ liquid crystal displays April 4 Feldman, Ari Optical computing April 11 Guerassio, Ian Self-assembly
More informationHigh Purity and High Mobility Semiconductors 14
High Purity and High Mobility Semiconductors 14 Editors: E. Simoen R. Falster O. Kononchuk O. Nakatsuka C. Claeys Sponsoring Divisions: Electronics and Photonics Dielectric Science & Technology Published
More informationLocalized laser doped contacts for silicon solar cells: characterization and efficiency potential
Localized laser doped contacts for silicon solar cells: characterization and efficiency potential Andreas Fell, Evan Franklin, Daniel Walter, Klaus Weber SPREE Seminar Sydney, 21/08/2014 2 Outline What
More information2007 Elsevier Science. Reprinted with permission from Elsevier.
J. Härkönen, E. Tuovinen, P. Luukka, H.K. Nordlund, and E. Tuominen, Magnetic Czochralski silicon as detector material, Nuclear Instruments and Methods in Physics Research A 579 (2007) 648 652. 2007 Elsevier
More informationLab IV: Electrical Properties
Lab IV: Electrical Properties Study Questions 1. How would the electrical conductivity of the following vary with temperature: (a) ionic solids; (b) semiconductors; (c) metals? Briefly explain your answer.
More information1. Introduction. 2. Experiments. Paper
Paper Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF 4 Plasma Małgorzata Kalisz, Grzegorz Głuszko, and Romuald B. Beck
More informationSupporting Online Material for
www.sciencemag.org/cgi/content/full/327/5961/60/dc1 Supporting Online Material for Polarization-Induced Hole Doping in Wide Band-Gap Uniaxial Semiconductor Heterostructures John Simon, Vladimir Protasenko,
More informationEE 330 Lecture 9. IC Fabrication Technology Part II. -Oxidation -Epitaxy -Polysilicon -Planarization -Resistance and Capacitance in Interconnects
EE 330 Lecture 9 IC Fabrication Technology Part II -Oxidation -Epitaxy -Polysilicon -Planarization -Resistance and Capacitance in Interconnects Review from Last Time IC Fabrication Technology Crystal Preparation
More informationSilicon VLSI Technology. Fundamentals, Practice and Modeling
Text Book: Silicon VLSI Technology Fundamentals, Practice and Modeling Authors: J. D. Plummer, M. D. Deal, and P. B. Griffin Crystal Growth, Wafer Fab and Properties High Quality Single Crystal Wafers
More informationChapter 6. AlGaAs/GaAs/GaAs Wafer-fused HBTs
Chapter 6. AlGaAs/GaAs/GaAs Wafer-fused HBTs 6.1. Overview Previous chapters described an AlGaAs-GaAs-GaN HBT, in which an epitaxially grown AlGaAs-GaAs emitter-base was wafer-fused to a GaN collector.
More informationTest Methods for Contactless Carrier Recombination Lifetime in Silicon Wafers, Blocks, and Ingots
Test Methods for Contactless Carrier Recombination Lifetime in Silicon Wafers, Blocks, and Ingots Ronald A. Sinton Sinton Instruments, Inc. Boulder, Colorado USA SEMI Standards Meeting Hamburg, 21 September,
More informationFabrication Technology
Fabrication Technology By B.G.Balagangadhar Department of Electronics and Communication Ghousia College of Engineering, Ramanagaram 1 OUTLINE Introduction Why Silicon The purity of Silicon Czochralski
More informationFABRICATION ENGINEERING MICRO- NANOSCALE ATTHE AND. Fourth Edition STEPHEN A. CAMPBELL. of Minnesota. University OXFORD UNIVERSITY PRESS
AND FABRICATION ENGINEERING ATTHE MICRO- NANOSCALE Fourth Edition STEPHEN A. CAMPBELL University of Minnesota New York Oxford OXFORD UNIVERSITY PRESS CONTENTS Preface xiii prrt i OVERVIEW AND MATERIALS
More informationDeuterium retention mechanism in tungsten-coatings exposed to JT-60U divertor plasmas
1 EXD/P3-10 Deuterium retention mechanism in tungsten-coatings exposed to JT-60U divertor plasmas M. Fukumoto 1), T. Nakano 1), K. Itami 1), T. Wada 2), Y. Ueda 2), T. Tanabe3) 1) Japan Atomic Energy Agency,
More informationReview of CMOS Processing Technology
- Scaling and Integration Moore s Law Unit processes Thin Film Deposition Etching Ion Implantation Photolithography Chemical Mechanical Polishing 1. Thin Film Deposition Layer of materials ranging from
More informationPEAK EFFICIENCIES WITH FALLING MANUFACTURING COSTS
PEAK EFFICIENCIES WITH FALLING MANUFACTURING COSTS Simple and cost-effective introduction of PERC technology into the mass production of solar cells Kerstin Strauch, Florian Schwarz, Sebastian Gatz 1 Introduction
More informationTi silicide electrodes low contact resistance for undoped AlGaN/GaN structure
222nd ECS meeting 11 Oct. 2012 Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure K. Tsuneishi, J. Chen, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui,
More informationTHIN NICKEL OXIDE LAYERS PREPARED BY ION BEAM SPUTTERING: FABRICATION AND THE STUDY OF ELECTROPHYSICAL PARAMETERS
THIN NICKEL OXIDE LAYERS PREPARED BY ION BEAM SPUTTERING: FABRICATION AND THE STUDY OF ELECTROPHYSICAL PARAMETERS Pavel HORÁK a,b, Václav BEJŠOVEC b, Vasyl LAVRENTIEV b, Jiří VACÍK b, Martin VRŇATA a,
More information