Transmission Mode Photocathodes Covering the Spectral Range
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1 Transmission Mode Photocathodes Covering the Spectral Range 6/19/2002 New Developments in Photodetection 3 rd Beaune Conference June 17-21, 2002 Arlynn Smith, Keith Passmore, Roger Sillmon, Rudy Benz ITT Industries - 1
2 Introduction Goal: Produce negative electron affinity transmission mode cathodes covering a broad spectral range and possessing high quantum efficiency Low dark count and low cost are secondary goals Results are transmission mode photocathodes, semiconductor bonded to glass Photocathode material characterization tools Material composition, doping density (SIMS, Transmission) Photogenerated carrier decay rate (TRPL) Photocathode material systems investigated and the spectral ranges GaAs InGaAs Standard spectral range (450 nm nm) UV GaAs (250 nm nm) 960 nm peak (500 nm nm) 1060 nm (600 nm nm) InGaP (high QE above GaAs) 400 nm nm 2
3 Review of Photocathode Physics Photons are absorbed in semiconductor regions creating electron hole pairs The electrons must diffuse to the emission surface to be emitted to vacuum Electrons recombine in the bulk with a characteristic rate Electron recombination at a surface is described by surface recombination velocity (front surface recombination velocity {FSRV}) Emission probability at the vacuum surface is the final process to effect the photoresponse of a negative electron affinity photocathode In all cases, except the recombination velocity, the parameters should be maximized to maximize photoresponse Presenting results of applying a design methodology for attempting to maximize photoresponse 3
4 Entrance Windows Studied Standard glass faceplates for systems Fiber optics of similar glass are also in common use Thermal coefficient of expansion 51.5x10-7 cm/cm/ºc UV glass for higher blue response Thermal coefficient of expansion 38.0x10-7 cm/cm/ºc Sapphire - in an exploratory bonding and epitaxial growth phase 1 Normalized Transmission Glass fluorescence Wavelength (nm) 7056 Glass 9741 Glass 4
5 Characterization of Photocathode Material Monitor normal elemental constituents Check for known lifetime limiting constituents Checks for diffusion of dopant species Verify cutoff wavelength of material % Transmission ev, GaAs Ev, 9.7% In Ev, 14.7% In Wavelength (nm) 5
6 Photogenerated Carrier Decay Rate Photo-excite double layer heterostructure with fast laser pulse and observe light emitted from the material Rate of decay is an indication of minority carrier lifetime. Time resolved photoluminescence (TRPL), inverse of decay rate can be thought of as lifetime Lifetime and mobility are factors in diffusion length Photon Count Laser 1 High Power Laser 1 Low Power Laser 2 High Power Laser 2 Low Power Laser 3 High Power Laser 3 Low Power fit 11.3 nsec fit 8.1 nsec 0.0E E E E E E-08 Time (sec) Using power can saturate trap levels Using laser wavelengths can probe different depths Want all curves to produce same decay rate and possess a long time constant Can be performed on bonded and unbonded structures 6
7 TRPL Lifetime for GaAs Photocathodes Minority carrier lifetime depends upon intrinsic material properties Band to band and Auger coefficients Lifetime also has a dependence upon the grown structure Doping dependence Material quality Interface quality Typical values for GaAs Low doped material 11 nsec Typical photocathode 1.5 to 3 nsec Poor quality photocathode < 300 psec to 1 nsec 7
8 GaAs Photocathode with QE > 50% 60 Q uantum Efficiency ( % ) Field strength > 40 kv/cm Wavelength (nm) Material improvement for low FSRV Lessons learned from TRPL experiments UHV process improvements Non-standard UHV production process Now can the blue portion of the spectrum be enhanced by using a different photocathode structure 8
9 FSRV and Decay Rate Effect QE Shape Normalized QE Hi FSRV, Low TRPL GaAs Best GaAs High FSRV effects blue portion of spectrum for transmission mode integrated photoresponse was 3X lower TRPL lifetime was 6X lower due to contaminated growth source Wavelength (nm) 9
10 Extended Blue GaAs Photocathode Thinned the AlGaAs window layer for improved blue transmission Thickness can not be reduced to zero as FSRV increases Applied most of the lessons learned from best GaAs photocathodes Used production process Lower response but repeatable Lower red response is due to using a thinner photocathode Still not getting to cutoff of 7056 glass Fall off in blue is 50 nm to soon Quantum Efficiency ( % ) Extended blue 2 30 Typical GaAs Wavelength (nm) 10
11 Transmission Mode UV GaAs Design First attempt was a windowless GaAs structure (similar to UV Silicon systems) Failed for low photoresponse Can GaAs process be improved to the glass cutoff for UV response Refine structure from Spectral Characteristics of GaAs Solar Cells Grown by LPE in JEM Vol. 28 #1, pp , Conduction Bandedge (ev) 2.1E E E E E E E E-01 Higher doping concentrations possible using MOVPE compared to LPE GaAs thickness {doping}, AlAs thickness {doping} 100 A {4e18}, 100 A {4e18} 100 A {1e19}, 100 A {4e18} 50 A {1e19}, 100 A {4e18} 50 A {1e19}, 100 A {1e19} 50 A {1e19}, 50 A {1e19} 50 A {3e19}, 50 A {1e19} 0.0E E E E E E-08 Distance from Faceplate (m) Trade off absorption characteristics for FSRV reduction Settled on structure between red and black Based on current doping capability Going to be very sensitive to FSRV 11
12 Reached Cutoff Wavelength of Glass Normalized QE (to 600 nm) UV GaAs Structure Extended Blue GaAs Wavelength (nm) TRPL lifetime of 2.42 to 2.48 nsec before bonding to glass (roughly standard values) Response in the 275 nm to 375 nm higher than extended blue 375 nm to 475 nm response lower Postulated due to FSRV pulling response down If true then higher response possible with higher doping or lower FSRV Now attempt to push cutoff wavelength by using different glass 12
13 UV GaAs Structure on 9741 Results Result was low integrated photoresponse, typically 3X lower than the same structure on 7056 glass Spectral response shows very low blue response Shape is indicative of high FSRV TCE mismatch of faceplate/semiconductor puts GaAs in tension Widens the bandgap and decreases doping effectiveness 1 Normalized QE (to peak QE) Glass Faceplate 9741 Glass Faceplate Wavelength (nm) 13
14 High QE GaAs Photocathode Summary Have demonstrated QE in excess of 50% for GaAs photocathodes over a broad spectral range Broadened the spectral range to 250 nm nm through the use of photocathode design First attempts to reach 200 nm were unsuccessful due to physical properties of glass Looking for glass with UV transmission, suitable physical characteristics and TCE equal to or greater than GaAs 14
15 Extended NIR Photocathodes Move to the longer wavelength side of the GaAs spectrum Substitution of InGaAs for GaAs material in cathode (no other changes) In concentration controls cutoff wavelength (960, 1060 nm) High In concentration leads to higher lattice mismatch in epitaxial layer Chose material system due to cost and experience with the GaAs epitaxial growth Lattice mismatch creates defects which reduce minority carrier properties Substrate orientation can also play a role in lattice mismatch 6% In 16% In 15
16 TRPL Lifetimes for InGaAs Samples TRPL RT broad band PL Cathode avg. τ (ns) Avg. Intensity (rel.) Std. GaAs % In % In Structure ** 6% In Structure ** 8% In Structure ** 8% In Structure ** 16% In Structure 4 <0.12 Near noise level 16% In Structure 5 <0.12 Near noise level 16% In Structure % In Structure substrate orientation 1 2 substrate orientation 2 ** uncorrected for detector response relative to GaAs TRPL lifetimes sensitive to: Indium concentration Structure Buffer layer Doping concentration Growth conditions Substrate Optimization results shown in Table, best structures processed into tube 16
17 Results of Extended NIR Photocathodes Quantum Efficiency nm Response Tube nm Response Tube nm Response Tube nm Response Tube S1 Photocathode High QE GaAs Wavelength (nm) Peak QE of 18% on 960 nm photocathode structure (13% at 960 nm) Peak QE of ~5% on 1060 nm photocathode structure (1% at 1060 nm) Further InGaAs material optimization possible UHV processing optimization possible Lower band gap and low lifetime affecting performance Switching to lattice matched material could improve minority carrier properties Lattice matched material would also remove visible cross hatch pattern 17
18 Preliminary InGaP Material Results Why use InGaP: Wider band gap should give higher QE over smaller spectral range Lattice matched to GaAs First hurdle was growth conditions for lattice match to GaAs Second step is structure with acceptable TRPL and PL Structure TRPL PL Intensity Free surface/ingap <0.2 1 Window Structure 1 < Window Structure 2 < Window Structure 3 <
19 Initial InGaP Photocathode Results 10 Quantum Efficiency (%) Surface Etch 1 Surface Etch Wavelength (nm) Spectral response is again indicative of a high FRSV or low minority carrier lifetime Does not eliminate the possibility of using material in reflection mode photocathodes 19
20 Conclusions High QE transmission mode GaAs photocathodes are possible Can be extended into the UV range Further work must be performed to find suitable faceplate Lattice mis-matched InGaAs can provide extended red transmission mode photocathodes Lattice matched material could improve performance Initial InGaP transmission mode photocathodes processed Quantum efficiency indicative of low diffusion length or high FSRV Experiments planned for reflection mode tests Confirm structure is FSRV limited Design experiments to investigate methods of reducing FSRV for transmission mode cathodes 20
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