Long-term reliability of SiC devices. Power and Hybrid
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1 Long-term reliability of SiC devices Power and Hybrid
2 Rob Coleman Business Development and Applications Manager TT electronics, Power and Hybrid Roger Tall Product Specialist Charcroft Electronics Ltd 2 TT Electronics plc
3 Who we are Manufacturers of ultra reliable, high performance discrete semiconductors, power modules & hybrid microelectronic solutions designed to operate in any environment. Through our flexibility and innovation, we aim to be recognised as trusted technology leaders in the aerospace, space, defence, medical and high-end industrial markets. We research, design and manufacture an innovative range of MOSFETS, Bipolar Transistors, IGBTS, Power Modules, Diodes, Voltage Regulators and Customised Hybrid Microcircuits. 3 TT Electronics plc
4 Who we are Charcroft Electronics is a privately-owned specialist distributor of commercial, BS/CECC & Mil-Std passive, interconnect, hi-reliability discrete components, ICs and Emech components and also a manufacturer of leaded & SMT Metal Foil Vishay-approved precision resistors & BS/CECC-approved radial MLCCs. Supplying for 40 years into Military Aerospace, Industrial & Audio - now focussing on niche markets who require Hi-Reliability components. Extensive product knowledge enables support of ongoing programs, full traceability and management of obsolescence issues. Fully franchised for TT electronics, including Power & Hybrid. Staff have an excellent working knowledge of the product-range, capabilities and have worked with P&H customers for many years. 4 TT Electronics plc
5 Long-term reliability of SiC devices 5 TT Electronics plc
6 SiC devices Property of SiC material SiC (silicon Carbide) is a compound semiconductor comprising of silicon (Si) and carbon (C). Compared to Si, SiC has properties including: 10 x dielectric breakdown voltage 3 x band-width 3 x thermal conductivity 6 TT Electronics plc
7 Advantages of SiC material for Power Device application SiC devices can be made with higher doping concentrate and hence a higher breakdown Voltage (typ 600V+) and yet have a very low resistance. Si IGBT MOSFETS high breakdown low on resistance But x Achieve at cost of switching speed high breakdown low on resistance high switching speeds Due to the injection into the drift region of the structure of minority carriers. MOSFETS are majority carrier devices with higher breakdown BONUS; When properly packaged they can operate at >>200⁰C 7 TT Electronics plc
8 So what about long term reliability if used at these temperatures? 8 TT Electronics plc
9 SiC experiments 1 TT Electronics Semelab Ltd s initial thoughts were to verify a basic structure Diode at elevated temperatures. Cree CPWR/CPW2 Schottky barrier die family were chosen for our initial design of experiments. These were mounted in the TO-257AA and DLCC3 package. The aim of the experiment was to monitor Vf and Ir over a period of time (in excess of 6000 hours) at elevated temperatures i.e. 225⁰C 9 TT Electronics plc
10 SiC experiments 1 Test Conditions 10 TT Electronics plc
11 Current (A) ΔVF(mV) SiC experiments 1 Test results Long Term Reliability Tests 8,000 hour at 225 C, 1200V DLCC3 Diode SiC Reverse Leakage Current Thermal Impedance 1200V Leakage Current vs Time at 225 C Storage Bake Zth - ΔVF(mV) Vs Time at 225 C Storage Bake 6.0E E E-6 3.0E-6 2.0E E E Hours Hours 11 TT Electronics plc
12 12 TT Electronics plc Zero Reverse Recovery Junction Capacitance charge related effects only constant over temperature
13 SiC experiments 2 Having shown the success of SiC diode reliability, Semelab Ltd went on to analyse both Cree and Rohm 1200Volt 80 mω Mosfets co-packed with a SiC diode. H.T.R.B (high temperature reverse bias) was carried out for 2000 hours at a temperature of 225⁰C. Engineering samples were assembled using each of the die types co-packed in a To-258 package with an anti-parallel diode. As previous engineering trials; it was found that the MOSFET body diode had a high forward voltage (VSD). HTRB configuration The devices were bias at a VDD 80% of the maximum rating with a gate to source Vs = Vg = 0 Volts 13 TT Electronics plc
14 SiC experiments 2 test results 14 TT Electronics plc
15 Conclusion After a period of 2000 hours H.T.R.B, neither the Cree or Rohm Devices are showing significant changes in electrical performance and continues to meet the test specifications 15 TT Electronics plc
16 SiC experiments 3 - radiation performance Semelab is presently working with ESA (European Space Agency) to undertake SEU (single event upset) testing No problems detected during beam exposure for Gate/Drain current Gate sensitivity was detected during PIGS (Post irradiation stress test) after the heavy ions test (PIGS tests performed during intermediate measurements) The threshold for the Gate degradation was found around LET = 16MeV/cm2 mg After all data is processed, results will show if there is correlation between Drain and Gate Voltage during beam exposition Results should be available in 2-3 weeks Total dose campaign is also scheduled: Dose rate of 3.6Krad/hour till reaching 300Krad accumulated dose 16 TT Electronics plc
17 Die attachment to achieve greater reliability Non-Pressure Large area 20mm Square Ag sintering Gold plated alsic base plate on gold plated DBC Samples have been temperature cycled from -40 C to 250 C (minimum of 3 hours at each extreme) 4 of 6 samples delaminated after 50 cycles Ag sintering on Ag thick film 5 mm sq chip The samples have completed 3000 temperature cycles -55/150 C with no signs of delamination of the die attach seen 17 TT Electronics plc
18 High Temperature Materials Research Pressureless Ag sinter die attach has been tested from 0 C to 350 C using a Ag backed SiC device and a Au plated substrate with 310 cycles completed 2000hrs 300 C and 2000hrs 300 C have been completed HTSB HTRB 18 TT Electronics plc
19 High Temperature Materials Research Cross sections of the Ag sinter paste before and after testing has revealed that the sintering process continues Porous section in silver sinter layer seen section of die attach immediately after die attach section of die attach after temperature cycling and test 19 TT Electronics plc Tests by Warwick University
20 High Temperature Materials Research SiC and GaN manufacturer s have been tested as bare die above 300 C 20 TT Electronics plc
21 High Temperature Materials Research 21 TT Electronics plc Tests by Warwick University
22 High Temperature Hybrids Pressure & Temperature sensing for down hole operation at 200 o C Double sided hermetically sealed High Temperature Cofired Ceramic Module High Temperature Multi-Chip Electronics Module HTCC Substrate/Package Double sided cavity/assembly Qualified at 200 o C Wire bonded bare die in dual hermetic cavities 22 TT Electronics plc
23 23 TT Electronics plc We are presently working on the next generation of Aero-engine FADEC s which will be placed closer to the engine and need to operate at 200 o C
24 Thank you further details are available at Or by ing Rob or Roger at 24 TT Electronics plc
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