Thin film PV Technologies Thin film Silicon PV Technology

Transcription

1 Thin film PV Technologies Thin film Silicon PV Technology Week 5.2 Arno Smets

2 Thin film Silicon solar cell

3 Semiconductor Materials IV semiconductors: Si, Ge Rn Xe Kr Ar Ne He At I Br Cl F Po Te Se S O Bi Sb As P N Pb Sn Ge Si C Tl In Ga Al B Hg Cd Zn Au Ag Cu VlllA VllA VlA VA lva lllva llb lb (222) (210) (210) H

4 Semiconductor Materials IV semiconductors: Si, Ge Rn Xe Kr Ar Ne He At I Br Cl F Po Te Se S O Bi Sb As P N Pb Sn Ge Si C Tl In Ga Al B Hg Cd Zn Au Ag Cu VlllA VllA VlA VA lva lllva llb lb (222) (210) (210) H

5 Semiconductor Materials IV semiconductors: Si, Ge Rn Xe Kr Ar Ne He At I Br Cl F Po Te Se S O Bi Sb As P N Pb Sn Ge Si C Tl In Ga Al B Hg Cd Zn Au Ag Cu VlllA VllA VlA VA lva lllva llb lb (222) (210) (210) H

6 Semiconductor Materials IV semiconductors: Si, Ge Rn Xe Kr Ar Ne He At I Br Cl F Po Te Se S O Bi Sb As P N Pb Sn Ge Si C Tl In Ga Al B Hg Cd Zn Au Ag Cu VlllA VllA VlA VA lva lllva llb lb (222) (210) (210) H

7 Semiconductor Materials IV semiconductors: Si, Ge VlllA 1 H 29 lb Cu llb Zn lllva B Al Ga lva C Si Ge VA N P As VlA O S Se VllA F Cl Br He Ne Ar Kr a- Si x Ge 1- x :H nc- Si x Ge 1- x :H Ag Au Cd Hg In Tl Sn Pb Sb Bi Te Po (210) I At (210) Xe Rn (222)

8 Semiconductor Materials IV semiconductors: Si, Ge VlllA 1 H 29 lb Cu llb Zn lllva B Al Ga lva C Si Ge VA N P As VlA O S Se VllA F Cl Br He Ne Ar Kr a- Si x Ge 1- x :H nc- Si x Ge 1- x :H a-si x C 1-x :H Ag Au Cd Hg In Tl Sn Pb Sb Bi Te Po (210) I At (210) Xe Rn (222)

9 Semiconductor Materials IV semiconductors: Si, Ge VlllA 1 H lb Cu Ag Au llb Zn Cd Hg lllva B Al Ga In Tl lva C Si Ge Sn Pb VA N P As Sb Bi VlA O S Se Te Po (210) 9 VllA F Cl Br I At (210) He Ne Ar Kr Xe Rn (222) a- Si x Ge 1- x :H nc- Si x Ge 1- x :H a- Si x C 1- x :H nc- Si x O 1- x :H

10 Amorphous Network Source:

11 2 Material Phases: amorphous and microcrystalline silicon Several 100nm ~30-50 nm sta[onary columnar growth incuba[on zone substrate

12 Indirect band gap Energy photon phonon Momentum

13 Comparison with c- Si: ladce Wavenlength [micrometers] Absorp[on coefficient [cm - 1 ] a- Si Ge:H c- Si Photon [ev]

14 absorp[on no absorp[on 2.00 alloy Band gap ev P(λ) (x10 9 W m - 2 m - 1 ) AM Wavenlength (x10-9 m)

15 absorp[on no absorp[on 2.00 alloy Band gap 1.75 a-si:h ev ev P(λ) (x10 9 W m - 2 m - 1 ) AM Wavenlength (x10-9 m)

16 absorp[on no absorp[on 2.00 alloy Band gap 1.75 a-si:h a-sige:h ev ev ev P(λ) (x10 9 W m - 2 m - 1 ) AM Wavenlength (x10-9 m)

17 absorp[on no absorp[on 2.00 alloy Band gap 1.75 a-si:h a-sige:h a-sic:h ev ev ev >1.9 ev P(λ) (x10 9 W m - 2 m - 1 ) AM Wavenlength (x10-9 m)

18 absorp[on no absorp[on 2.00 alloy Band gap 1.75 a-si:h a-sige:h a-sic:h nc-sio:h ev ev ev >1.9 ev >2.0 ev P(λ) (x10 9 W m - 2 m - 1 ) AM Wavenlength (x10-9 m)

19 Defects in the ladce

20 An p- i- n juncion Back Reflector TCO Glass

21 : drij mechanism required for transport p- a- SiC:H Intrinsic n- E Fermi

22 Principle of p- i- n juncion p- a- SiC:H Intrinsic n- Conduc[on band E Fermi Valence band

23 A typical p- i- n juncion Back Reflector n i p TCO TCO Glass

24 Spectral Irradiance (W/m 2 /nm) UV O 3 AbsorpIon Visible Solar RadiaIon Spectrum O 2 Infrared Sunlight Top of the Atmosphere H 2 O 5800 K Blackbody Spectrum H 2 O H 2 O Radia[on at Sea Level H 2 O AbsorpIon Bands CO 2 H 2 O Wavelength (nm) Does not cover en[re spectrum! Back Reflector TCO Glass

25 Spectral Irradiance (W/m 2 /nm) Solar RadiaIon Spectrum 2.5 UV Visible Infrared 2 Sunlight Top of the Atmosphere 5800 K Blackbody Spectrum H 2 O Radia[on at Sea Level 0.5 H 2 O AbsorpIon Bands O 2 H 2 O CO O 2 H 2 O 3 H 0 2 O Wavelength (nm) AbsorpIon Does not cover en[re spectrum! Back Reflector TCO Glass

26 Back Reflector Solar RadiaIon Spectrum 2.5 UV Visible Infrared Spectral Irradiance (W/m 2 /nm) O 3 AbsorpIon A- Si:H O 2 Sunlight Top of the Atmosphere H 2 O 5800 K Blackbody Spectrum H 2 O H 2 O Radia[on at Sea Level H 2 O AbsorpIon Bands CO 2 H 2 O Wavelength (nm) AbsorpIon Beler spectrum coverage! µc- Si:H TCO Glass

27 The / tandem E Fermi nm nm

28 p- a- SiC:H Intrinsic n- p- n- Conduc[on band E Fermi Valence band nm nm

29 Double- juncion approach 30 Single pin 30 Tandem Back Reflector 25 The / Back Reflector 25 J (ma/cm 2 ) TCO Glass flexible substrate J (ma/cm 2 ) ? µc- Si:H TCO Glass Voltage (V) Voltage (V)

30 Double- juncion approach 30 Single pin 30 Tandem Back Reflector 25 The / Back Reflector 25 J (ma/cm 2 ) TCO Glass flexible substrate J (ma/cm 2 ) µc- Si:H TCO Glass Voltage (V) Voltage (V)

31 MulI- juncion based solar cells Ag Ag Ag Ag 180 Ito Ito 160 ΖnΟ Ag Flexible SS / / n- i- p / n- i- p / n- i- p a- Si:Ge:H a- Si:Ge:H ΖnΟ Ag Flexible SS a- Si:Ge:H / a- Si:Ge:H / n- i- p / n- i- p / n- i- p AM 1.5 spectum (mw/(cm 2 μm)) Wavelength (nm)

32 /a- SiGe:H/ mul5- junc5ons United Solar: IniIal efficiency: 16.3 % B. Yan, Appl. Phys. Le1. 99, (2011).

33 MulI- juncion approach 10.1% 12.3% Ag 13.4% 16.3% (ini[al) Ag lto Ito Ito Back Reflector Ag Ag Ag Ag Back Reflector a- Si:Ge:H a- Si:Ge:H a- Si:Ge:H TCO TCO ΖnΟ ΖnΟ ΖnΟ Glass Flexible substrate Glass Ag Flexible SS Ag Flexible SS Ag Flexible SS p- i- n / p- i- n / p- i- n / p- i- n / / n- i- p / n- i- p / n- i- p a- Si:Ge:H / a- Si:Ge:H / n- i- p / n- i- p / n- i- p / a- Si:Ge:H / n- i- p / n- i- p / n- i- p

34 MulI- juncion approach 12.3% Ag 13.4% lto Back Reflector Ag TCO Glass / p- i- n / p- i- n ΖnΟ Ag Flexible SS / / n- i- p / n- i- p / n- i- p

35 MulI- juncion approach 12.3% Ag 13.4% lto Back Reflector Ag TCO Glass / p- i- n / p- i- n ΖnΟ Ag Flexible SS / / n- i- p / n- i- p / n- i- p

36 Glass Front TCO A- Si:H Black metal Encapsulant

37 TF silicon modules manufacturing Glass Front TCO Black metal Encapsulant

38 TF silicon modules manufacturing 1. Glass plates used as substrate carrier Glass

39 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition Glass Front TCO

40 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition 3. Laser scribing: L1 Glass Front TCO

41 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition 3. Laser scribing: L1 4. Si:H layers deposition Glass Front TCO

42 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition 3. Laser scribing: L1 4. Si:H layers deposition 5. Laser scribing: L2 Glass Front TCO

43 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition 3. Laser scribing: L1 4. Si:H layers deposition 5. Laser scribing: L2 Glass Front TCO Black metal 6. Back metal deposition

44 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition 3. Laser scribing: L1 4. Si:H layers deposition 5. Laser scribing: L2 Glass Front TCO Black metal 6. Back metal deposition 7. Laser scribing: L3

45 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition 3. Laser scribing: L1 4. Si:H layers deposition 5. Laser scribing: L2 6. Back metal deposition Glass Front TCO Black metal Encapsulant 7. Laser scribing: L3 8. Encapsulant

46 TF silicon modules manufacturing 1. Glass plates used as substrate carrier 2. Front TCO deposition 3. Laser scribing: L1 4. Si:H layers deposition 5. Laser scribing: L2 6. Back metal deposition Glass Front TCO Black metal Encapsulant 7. Laser scribing: L3 8. Encapsulant

47 Micromorph Tandem Module

48 HyET Solar Manufacturing sequence: Al foil + TCO + + back contact + carrier foil Al foil + series connect + contact wires + curng + encapsulant

49 Flexible Products

50 Thank you for your azenion!