INTERCONNECTION, AND CONTACT
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1 PROCEEDINGS OF THE SYMPOSIA ON RELIABILITY OF SEMICONDUCTOR DEVICES AND INTERCONNECTION AND MULTILEVEL METALLIZATION, INTERCONNECTION, AND CONTACT TECHNOLOGIES Edited by Harzara S. Rathore Hopewell Junction, New York Geraldine C. Schwartz Hopewell Junction, New York Robin A. Susko Endicott, New York DIELECTRICS AND INSULATION AND ELECTRONICS DIVISIONS Proceedings Volume 89-6 THE ELECTROCHEMICAL SOCIETY, INC., 10 South Main St., Pennington, NJ
2 TABLE OP CONTENTS * PREFACE iii RELIABILITY OP SEMICONDUCTOR DEVICES AND INTERCONNECTION ELECTOMIGRATION IN SUBMICRON 1 INTERCONNECTS AND MULTILEVEL INTERCONNECTIONS T. Kwok IMPROVED ELECTROMIGRATION PERFORMANCE IN Al/4% 13 Cu USING A RANGE OF REFRACTORY CAPS Armstrong, N. P. STRESS-INDUCED MIGRATION OP ALUMINUM-SILICON FILMS: 26 INFLUENCING FACTORS AND COUNTERMEASURES Katto, H., and Shimizu, S. A STUDY OP ELECTROMIGRATION PERFORMANCE IN RANGE OF 39 Al/Si/Ti ALLOYS Armstrong, N. P., Dulniak, R. J., and Turnbull, A. HUMIDITY-TEMPERATURE-VOLTAGE ACCELERATION MODEL 53 FOR CORROSION OF THIN FILM ALUMINUM Osenbach, J. W., and Zell, J. L. CORROSION PRODUCTS AND SURFACE STRUCTURE OF Pb/Sn 81 SOLDER PADS Yeh, H., and Dalai, H. A PRACTICAL APPROACH TO HAST FOR RELIABILITY 10 6 TESTING OF 3um CMOS VLSI TELECOMMUNICATION SYSTEMS AND CORRELATION WITH 85/85 Hente, A., Allaert, K., and De Pauw, P. HOT CARRIER LIMITED OPERATING VOLTAGES FOR 116 SUBMICRON NON-LDD SHALLOW JUNCTION MOSFET'S Chaudhari, P. K., Wen, D. S., and Osburn, C. M. ANOMALOUS HOT ELECTRON EFFECTS INDUCED BY PECVD 124 PASSIVATION PROCESSES Kim, S.U., and Hinedi, F. v
3 CHARACTERISTICS OF Al-Ti-Si CONTACTS TO N+ AND 141 P+ SILICON Shenai, K., Piacente, P. A., Al-Marayati, S. and Baliga, B. J. ELECTRICAL CHARACTERISTIC OF INTER-POLY Si OXIDE 154 AND OPTIMIZED CELL STRUCTURE FOR RELIABLE FLASH EEPROM Tanaka, S., Kanebako, K., Hori, M., Tozawa, N. and Asano, M. TIME-DEPENDENT DEGRADATION IN MOS DEVICES 168 Yang, c. Y., Wang, C. M., Lin, G., Tan, P., and Tzou, J. J. RELIABILITY ISSUES FOR ULTRA THIN INSULATORS Nguyen, T. N., Ollvo, P. and Ricod, B. GATE OXIDE LEAKAGE RELIABILITY FAILURES IN CMOS 207 CIRCUITS Vandanbroeck, J., De Pauw, p., Van den Reeck, M., and Stevens, L. RELIABILITY STUDY OF PECVD SILICON NITRIDE FOR 215 COMPOSITE INSULATOR Nguyen, D., Rathore, H. S., Edwards, R., Depalma, V., and Gati, G. RELIABILITY OF A 10 NM STACKED INSULATOR 227 Sichart, K.V., Do Thanh, L,, Kleinert, Th., Rohl, s., and Reinainger, H. MULTILEVEL METALLIZATION, INTERCONNECTION, TECHNOLOGIES AND CONTACT ADHESION, SQLDERABILITY, NEXT GENERATION PTH Deckart, C. A, AND PRODUCTIVITY: 239 POLY(VINYLCINNAMATE) PHOTORESISTS FOR FINE LINE 257 PRINTED CIRCUITRY John, K., Simoliunaa, S., and Toroson, A. ELECTRICAL INTERCONNECTION THROUGH SILICON WAFER 264 Dupeux, T., Sibuet, H, and Deroux-Dauphin, P. vi
4 EFFECTS OF DRY ETCHING ON SHALLOW TITANIUM 2 73 SILICIDE CONTACT Tseng, M. F. and Chang, S. W. PLANARIZED CONTACT PROCESS FOR SUBMICRON VLSI 278 DEVICES USING RESIST ETCH BACK OF CVD TUNGSTEN Sivaram, S., Patterson, L., Liao, D., and Suh, K. RAPID THERMAL ANNEALING OF Ti AND TiW 289 METALLIZATION ON SILICON Mueller, B. K. and Kalkur, T. S. EXTREMELY LOW-RESISTANCE AND RELIABLE Al-TiW-TiSi2 CONTACTS TO n+ AND p+ SILICON FOR SILICON VLSI AND SMART POWER DEVICES Shenai, K., Piacente, P. A., Al-Marayati, Saia, R., and Baliga, B. J. s., 295 PLANARIZATION PROCESSES FOR MULTILEVEL METALLIZATION 310 Schwartz, G. C. ISOPLANAR METALLIZATION PROCESSES 3 48 Pai, P.-L., Paunovic, M. and Ting, c. H. EFFECT OF VIA FILLING ON THE VIA RESISTANCE AND 3 56 SURFACE TOPOGRAPHY Pai, P.-L. and Ting, C. H. A NON-ETCHBACK SPIN-ON-GLASS SOG PROCESS FOR 3 68 MULTILEVEL INTERCONNECTION TECHNOLOGY Ting, C. H., Lin, H. Y., Pai, P. L., and Rucker, T. G. CHEMICAL VAPOR DEPOSITION OF TUNGSTEN (CVD W) 380 AS SUBMICRON INTERCONNECTION AND VIA-STUD Lee, P.-I., Cronin, J., and Kaanta, C. APPLICATION OF BORON-DOPED PLASMA TEOS FOR 3 96 INTERLEVEL DIELECTRIC Moghadam, P. K. ETCHBACK OF CVD BLANKET TUNGSTEN FILMS IN A 412 HEXODE REACTOR Robb, F. Y., and Ginn, K. W. vii
5 TWO STEP TAPERED VIA HOLE ETCHING USING DOWN 425 FLOW AND REACTIVE ION ETCHING Tsuchiya, T., Konno, J., Takada, T., Fujimura, S., and Yano, H. A MODIFIED PHOTORESIST RESISTANT TO OXYGEN PLASMA 436 Tranjan, F. M., Bobbio, S. M., Dubois, T. D., Jones, S. K., Poole, J. D., Frieser, R. G., Nivedan, T., and Ashburn, S. RAPID THERMAL ANNEALING OF COBALT ON SILICON 451 Sitaram, A. R. and Murarka, S. P. TITANIUM SILICIDE FORMATION AND ARSENIC DOPING 458 BEHAVIOR UNDER RTP IN VACUUM Furlan, R. and Swart, J. W. CONTACT RESISTANCE: A REVIEW OF RECENT DEVELOPMENTS 472 IN MEASUREMENT AND MODELING Swirhun, S. E. AUTHOR INDEX 483 SUBJECT INDEX 485 vili
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