Die Attach Materials. Die Attach G, TECH. 2U. TECHNICAL R&D DIV.

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1 Die Attach Materials Die Attach G, TECH. 2U. TECHNICAL R&D DIV.

2 2 Topics

3 3

4 What it is X 5,000 X 10,000 X 50,000 Si Chip Au Plating Substrate Ag Resin 4

5 Current Products Characteristics H9890-6A H9890-6S H High Thermal Conductivity High Modulus Long Open Time High Hot Die Shear Strength High Thermal Conductivity Middle Modulus Long Open Time High Hot Die Shear Strength High Thermal Conductivity Low Modulus Long Open Time Viscosity C C C T.I Density 4.2 g/cm g/cm g/cm 3 Non-Volatile Content 91% 90% 90% Silver Contents 87% 85% 82% Shrinkage Ratio at Cure 25% 25% 30% Volume Resistivity 8 x 10-6 Ohm.cm 11 x 10-6 Ohm.cm 20 x 10-6 Ohm.cm Die Shear RT 50 N/mm 2 45 N/mm 2 25 N/mm 2 Strength 260 C 25 N/mm 2 20 N/mm 2 5 N/mm 2 Storage RT 17 GPa 11 GPa 6 GPa Modulus 200 C 8.2 GPa 5.0 GPa 3.5 GPa C.T.E. 23 ppm 30 ppm 45 ppm Water Absorption 0.1% 0.1% 0.1% Thermal Conductivity (Bulk) 140 W/mK 100 W/mK 60 W/mK Pot Life 2 days 2 days 2 days 5

6 Selectivity Of Plating Die shear strength(mpa) Ag plated Ni/Pd/Au plated XH9890-6A Bare Cu Ni plated Sn plated Bare Al Substrate RT 260degC Die shear strength(mpa) Ag plated Ni/Pd/Au plated XH9890-6S H9890-6S RT 260degC Bare Cu Ni plated Sn plated Bare Al Substrate Die shear strength(mpa) Ag plated Ni/Pd/Au plated XH H Bare Cu Ni plated Sn plated Bare Al Substrate RT 260degC 6

7 Thermal Cycling Test Vehicle / Curing Si Chip: 2 mm x 2 mm x 100 micron Si chips (backside: Au) Substrate: Ag plated Cu LF Curing condition: 60 min. ramp to C + 60 min. at C Thermal Cycling: C to C for 1,000 hours at 2 cycles per hour Die shear strength (DSS) at room temperature Thermal resistance using T3Ster 7

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9 Conventional High Thermal H9683 Characteristics Curing - For QFN and QFP - High Thermal Conductivity at 3 Layer - High Resistivity - High Adhesion Strength - Good Dispensability 150 o C x 120min Viscosity [Pa s] (@ 2.5 rpm) 25 T.I (0.5 rpm / 5 rpm) 6.0 Volume Resistivity [x10^-4 W -cm] 0.5 Adhesive Strength [N/mm2] Thermal Conductivity [W/mK] RT o C layer 11 3 layer 6.5 Tg [ o C] *1 61 Storage Modulus*1 25 o C o C 0.07 *1: A film was prepared by curing paste between two glass pieces. 9

10 SAT After JEDEC Level 3 H9683 SAT Initial state After JEDEC Lv.3 SAT Results After JEDEC Lv.3 (30 o C / 70% / 264hrs + 3X Reflow at 260 o C Frame: PPF (Ni/Pd/Au); Thickness: 200 µm; Die Pad Size: 11.5 x 8 mm; Die Size: 3 mm Square; Die Thickness: 330 µm; Passivation: Polyimide 10

11 11

12 Resin Powder Technology Before Processing (wet) After Processing (cured) Die Die Substrate Substrate Ag Filler Liquid Carrier Polymer Powder 12

13 13 Resin Powder

14 Current Products PRODUCT Sk30 Sk70N/AP2 H9940 XH Sk100N (DEVELOPMENT) (DEVELOPMENT) Type *: Interim tested values Thermoplastic Thermoplastic / Thermoset Combination Thermoset - Lowest Elastic Modulus - For Large Dies - Low Elastic Modulus - For Middle Sized Dies - High Adhesion Strength - For Semiconductor Devices - BLT < 1 mil possible - For Middle Sized Dies - High Thermal Conductivity Viscosity [Pa 5 rpm 15* 14 TBA 15* 15* T.I [0.5 rpm / 5 rpm] 3.0* 3,2 TBA 4.0* 5.0* Silver Contents [%] TBA 93,0 76,0 TBA TBA Die Shear Strength (Si/Ag) 45* * 18* Tg [ o C] 73* TBA TBA Thermal Conductivity [W/mK] 20* * 70* Elastic Modulus < 1.0* 5,5 4,5 5.6* TBA 14

15 Application Stress Chart Sk100N Sk100 Sk70N Sk70N/AP2 Sk60N Sk60 Sk30N Sk30 E =0.6GPa 12.7mm 5.0mm E =4.1GPa E =2.0GPa E =1.2GPa Cu/Al 15

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17 Current Materials Product XS XS High Die Shear Strenght High Die Shear Strenght Characteristics Elevated Thermal Conductivity High Thermal Conductivity AluminaFiller AluminaFiller 5rpm Pas 8 14 TI 2,2 1,3 Tg C CTE < Tg ppm/ K > Tg ppm/ K RT C 8 5 Adhesion Strength Storage Modulus GPa 4,3 8 Thermal Conductivity W/mK 1,2 2,5 Curing 30 Min ramp-up + Hold for 30 C 17

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19 Conductive Materials Product H9800 XH XH XH Characterisitcs High Adhesion Strength Low Elastic Modulus, No Bleeding High Adhesion Strength on Au & Ag plated Lead-Frame No Bleeding Passes MSL3 Good Moisture Resistance 5 rpm Pas 9,4 10,1 11,2 11,9 TI 6,4 5,3 6,6 5,9 Tg C 73,0 35,0 70,0 55,0 CTE < Tg ppm/ K 50,0 50,0 45,0 50,0 > Tg ppm/ K 130,0 125,0 130,0 125,0 Elastic RT GPa 7,4 1,1 8,4 6,1 Modulus 260 C GPa 0,2 0,1 0,2 0,2 Die Shear RT N/mm 2 45,0 15,0 58,0 43,0 Strength (Si/Cu) 260 C N/mm 3 5,0 2,0 5,8 8,4 Curing 30 Min Ramp-Up + Hold 30 Min. 30 Min Ramp-Up + Hold 30 C 19

20 Non-Conductive Product DA Low Modulus Characteristics High Reliability No Bleeding Viscosity Pas 8 TI 4,7 Tg (DMA) C 57 CTE < Tg ppm/ K 40 > Tg ppm/ K 160 Elastic Modulus RT GPa C GPa 0,13 Die Shear Strength RT N/mm² C N/mm² 4 Moisture Absorption % 0,5 Curing 30 Min. Ramp-up + Hold for C 20

21 Low Cost Conductive Product XH9816-8F Characteristics Ag Coated Filler Low Weight 5 rpm Pas 9,7 TI 5,6 Tg C 60 CTE < Tg ppm/ K 35 > Tg ppm/ K 120 Elastic RT GPa 2,3 Modulus 260 C GPa 0,1 Die Shear Strength (Si/Cu) Curing RT N/mm² C N/mm² 4,5 Ramp-up for 0 Min. + Hold C 21

22 22

23 Wafer-Applied B-Stage Process Squeegee Metal Mask D/A Paste Wafer Printing Wafer B-stage (First Curing) Wafer Pick up Dicing Wafer Ag Paste Dicing Tape Wafer Ag Paste Dicing Tape Dicing Tape Lead-Frame Heating Chip Mounting Curing (Second Curing) Wire Bonding Molding Compound 23

24 Wafer Applied / B-Stage Product XH XS8483W-8 (Development) Type Conductive Non-Conductive Printable Easy Pick-up Characteristic Good Bondability Good Bondability High Die Shear Strength High Die Shear Strength 5 rpm Pas TI 6,5 1,1 Tg C Storage RT GPa 8 5,5 Modulus 200 C GPa 0,22 0,12 Adhesion RT N/mm² Strength 200 C N/mm² 3,5 6 Volume Resisitvity Ohm.cm 9 X 10E-3 N/A Thermal Conductivity W/m K 2,6 TBA Curing B-Stage C C Final Cure C C 24

25 Thickness Measurement After B-Staging XH XS8483W Lamination Back Grind Tape Dicing Tape SB-165HRB-BH20-R2 (Mitsui Chemicals. Inc) or SB-228LBP-CH8-PB2 (Mitsui Chemicals. Inc) JE-115AJ (Nitto Denko) SPV-224S (Nitto Denko) Cut Method 1 time 1 time Thickness Measuring Ave : 36.2 um Ave:42.7um Dicing 3. Mounting Blade Spindle Speed S233JH S233JH 50.4D D0.035 T-40H T-40H rpm rpm Cut Speed 7 mm/sec 3 mm/sec Die Temp. 25 deg. C 25 deg. C 220 deg. C Sub. Temp. (>100 deg. 160 deg. C C) Pressure > 0.1 kg 0.12 kg Time > 0.1 sec. 0.2 sec Rz:4.5um 25

26 Current Development Ink-Jet Product XS8469IJ-1 Characteristic Easy Printing B-Stage 30 rpm Pas 20 Solid Contents % ~25 Tg C 90 Sorage RT GPa 2,4 Modulus 200 C GPa 0,04 Die Shear RT N/mm² 15 Strength 200 C N/mm² 4 Curing TBA 26

27 Ink-Jet Process 1.Ink Jet 2.B-Stage (UV Applied) UV cure within 1 min. after Ink-Jet printing 3.Chip Attach 4.Final Curing Substrate Temp.: 80 C Open Time: < 24 hours Post Cure 27

28 Thermal Interface Material Product XH High Thermal Conductivity Characteristics Low Modulus High Reliability 5 rpm Pas 50 TI 6,2 Tg C 11 CTE < Tg ppm/ K 45 > Tg ppm/ K 110 Storage Modulus RT GPa 0,5 200 C GPa 0,1 Adhesion Strenght RT N/mm² C N/mm² 4,4 Volume Resisitivity Ohm.cm 3,3 X 10E-4 Thermal Conductivy W/mK 5,3 Curing 30 Min Ramp-up + Hold for C 28

29 29

30 LED Adhesives Conductive Type Product H9863 H9607 Characteristics Blue White LEDs, Dispensing and Transferring High Thermal Conductivity High Hot Die Shear Strength Less Susceptible to Heat and Light General Type LED, Dispensing and Transferring High Thermal Conductivity High Hot Die Shear Strength Easy Processing 2.5 rpm Pas 25,0 25,0 T.I. 6,1 7.0 Tg C 175,0 70,0 RT N/mm² 11,0 16,0 Adhesion Strength 200 o C N/mm² 3,2 3,2 Thermal Conductivity W/mK 17,0 10,0 Volume Resistivity Ohmcm 0.3 X 10E-4 1,5 X 10E-4 30

31 Color 150 C Reflectance [%] Conventional o C INI 250hr 500hr 1000hr 2000hr Wave length [nm] Reflectance [%] o C H9863 (XH ) Wave length [nm] INI 250hr 500hr 1000hr 2000hr Reflectance [%] nm Conventional type BUV Wave length [nm] INI 250hr 500hr 1000hr 2000hr Reflectance [%] H9863 XH BUV Wave length [nm] INI 250hr 500hr 1000hr 2000hr 31

32 LED Non-Conductive Product DA DA Epoxy - Silicone Hybrid Resin Type Transferring and Dispensing Color Transparent White Characteristics High Die Shear and Hot Die Shear Strength No Bleeding High Die Shear and Hot Die Shear Strength High Thermal Conductivity Pas 7,0 15,0 Gel Time Sec. 60,0 47,0 Tg C 65,0 90,0 Storage Modulus GPa 2,0 7,5 RT N/mm² 23,0 22,0 Adhesion Strength 200 o C N/mm² 2,5 7.0 Storage Modulus GPa 2.0 7,5 Thermal Conductivity W/mK 0.2 2,4 Curing o C 32

33 Transmittance Change Trancemittance [%] Trancemittance [%] Conventional XS Type o 150 o C INI hr 250hr hr hr hr 300 Conventional type 600BUV 700 Wave length [nm] XS UV INI hr 250hr hr hr 2000hr Wave length [nm] Transmittance [%] Transmittance [%] DA XS DA o C INI 100hr 250hr 500hr 1000hr 2000hr Wave length [nm] XS BUV INI 100hr hr hr 1000hr hr Wave length [nm] 33

34 Reflectance Change Reflectance [%] DA o C Wave length [nm] INI 250hr 500hr 1000hr Reflectance [%] DA XS BUV Wave length [nm] INI 250hr 500hr 1000hr 2000hr 34

35 Sintering Die Attach For LED Product XH XH Type Dispense Stamping Characteristics High Thermal Conductivity High Modulus High Reflectance High Die Shear and Hot Die Shear Strength Viscosity Pas T.I. 7,8 8,0 Silver Contents % Volume Resistivity Ohmcm 4,00E-06 2,50E-06 CTE ppm/ K Storage RT GPa Modulus 200 C GPa Die Shear RT RT Strength 260 C 260 C Thermal Conductivity W/mK 280 W/mK 300 Curing 60 Min. Ramp + 60 Min. 200 C 35

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