Thermomigration and electromigration in Sn58Bi ball grid array solder joints

Size: px
Start display at page:

Download "Thermomigration and electromigration in Sn58Bi ball grid array solder joints"

Transcription

1 J Mater Sci: Mater Electron (2010) 21: DOI /s Thermomigration and electromigration in Sn58Bi ball grid array solder joints X. Gu K. C. Yung Y. C. Chan Received: 18 August 2009 / Accepted: 30 September 2009 / Published online: 13 October 2009 Ó Springer Science+Business Media, LLC 2009 Abstract In the present study, individual effect of thermomigration (TM) and combined effects of TM and electromigration (EM) in Sn58Bi ball grid array (BGA) solder joints were investigated using a particular designed daisy chain supplied with 2.5 A direct current (DC) at 110 C. Driven by the electric current, Bi atoms migrated towards the anode side and formed a Bi-rich layer therein. With a thermal gradient, Bi atoms tended to accumulated at the low temperature side. When the effects of TM and EM were in same direction, TM assisted EM in the migration of Bi, otherwise it counteracted the effect of EM. The effect of electron charge swirling were detected when the electric current passed by the Cu trace on the top of the solder bump instead of entering into it. For the joint without current passing by or passing through, only TM induced the migration of the Bi atoms. 1 Introduction Electromigration (EM) of solder joints has become a most persistent reliability issue in interconnects of microelectronic devices due to continuous miniaturization and the X. Gu Y. C. Chan (&) Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong, People s Republic of China eeycchan@cityu.edu.hk K. C. Yung Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People s Republic of China requirements for enhanced performance of devices [1]. Recently, thermomigration (TM) has been regarded as another reliability concern as it has been found to accompany EM in flip chip solder joints [2]. TM may assist or counteract EM depending on the direction of the thermal gradient. Most of the studies are focused on the TM of Sn Pb solder joints [2 6]. The results showed that with a substantial thermal gradient, Pb atoms in the solder migrated towards the lower temperature side. Due to the increasing awareness of the toxicity of Pb, Pb-free solders are being widely used in the electronic industry to replace Pb-containing solders in recent years. Among all the Pb-free solders, the Sn58Bi solder alloy is a promising candidate for low-temperature applications due to its low melting point (139 C) [7], so it is important to study the reliability of the Sn58Bi solder joints. Especially for the similar bi-phase structure of Sn58Bi alloy to that of Sn37Pb alloy, the investigation of TM and EM in Sn58Bi solder joint is very necessary. Many studies have reported the EM behavior of Sn58Bi solder joints [8 11]. Generally, these investigations have found that a continuous Bi-rich layer formed near the anode side, while a Sn-rich band formed at the cathode side after the current stressing. However, very few studies have yet been published to explore the TM behavior of Sn58Bi solder. In our previous study [12], the combined effects of TM and EM in Sn58Bi solder joints were investigated by using a line-type structure supplied with direct current (DC) in opposite directions. The results showed that Bi migrated to the lower temperature side driven by the thermal gradient. This study is intended to study the individual effect of TM and the combined effects of EM and TM in Sn58Bi ball grid array (BGA) solder joints using a particular designed daisy chain structure supplied with DC current. In addition, to help understand the mechanism of TM, a three-dimensional

2 J Mater Sci: Mater Electron (2010) 21: thermal electrical finite element method (FEM) will be conducted to simulate the current density distribution and temperature distribution in the structure. 2 Experimental Both of the small substrates and large substrates used to fabricate the BGA solder joints were made of flame retardant 4 (FR4) materials. The thickness of each substrate was 1.5 mm. The BGA pads were a solder-mask-defined type, and the opening diameters of the pads on the small substrate and large substrate were 280 lm and 250 lm, respectively. The thickness of the Cu pads was 35 lm with organic solderability preservative (OSP) surface finishing. The pads were linked with designed Cu traces with a thickness of 35 lm for electrical continuity. The small substrate was attached to the large substrate using flip chip bonding technology by a Flip-Chip bonder (SUSS, FCM). The assembly process was similar to that of a conventional surface mount technology (SMT) procedure, including flux printing, ball placement, reflow soldering and cleaning. The aligned samples were reflowed using a hot air convection reflow oven (BTU PYRAMAX 100 N). The peak temperature in the temperature profile was 176 C and the duration above the melting point of Sn58Bi alloy was about 82 s. Figure 1a gives images of a small substrate and large substrate before the assembly. Figure 1b gives the image of a prepared structure, and four designed daisy chains formed at the edges of the small substrate. Solder joints 1 6 were prepared for each chain. Only one chain was supplied with a DC current during the testing. In order to create the thermal gradient across the solder joints, two Cu pads with dimensions of (35 lm lm lm) were designed on the other side of the large substrates. Each Cu pad was connected with the BGA pads of joints 2 and 5 through the plating through holes (PTH) (as shown in Fig. 1a). The prepared structure with one chain supplied with DC current and was put into the furnace set at 110 C. Figure 1c shows the electron flow through the solder joint chain. For the solder joints 1, 3, 4 and 6, the electric current passes through the solder bumps. While the electric current passes by the top of the solder bump of joint 2 instead of entering it. No current passes by or passes through the solder bump of joint 5. After predetermined periods of time, samples were taken out of the furnaces and quenched in air. Each one sample was mounted and cross sectioned carefully towards the center of the solder joint. Microstructural observations were performed using a Philips XL 40 FEG Scanning Electron Microscope (SEM) equipped with an energy dispersive x-ray (EDX). Three-dimensional thermal electric FEM simulation was used to calculate the current density distribution and temperature distribution in the test structure. In the simulation model, the height of the solder bump between the two substrates is 150 lm. The physical parameters are listed in Table 1 [3, 13 15]. TCR is the abbreviation of temperature coefficient of resistance. 3 Results and discussion 3.1 Results Figure 2 shows the typical microstructure of one Sn58Bi BGA solder joint aged at 110 C without current stressing for 480 h. It is clear that the two interfaces exhibited nearly the same microstructure. Figure 3 shows the microstructures of six solder joints in one daisy chain supplied with a 2.5 A DC current at 110 C for 480 h. The measured temperatures of the small substrate surface and the large substrate surface were about 112 and 132 C, which showed that a thermal gradient was created between the small substrate and the large substrate during the test. According to the microstructures of the solder joints shown in Fig. 3, substantial mass migration had occurred in the solder joints during the current stressing. In particular for joints 1 and 6, serious separation of Bi atoms had occurred. It is clear that phase separation in Sn58Bi solder is especially prominent for solder joints 1 and 6. Figure 4 shows the detailed microstructures of joint 1 and joint 6 with local magnified images. The Bi atoms accumulated at the small substrate side in solder joint 1, while a large Sn-rich area formed at the large substrate side. By contrast, Bi atoms accumulated at the large substrate side of joint 6. It is well known that Bi atoms migrate in the direction of the electron flow. As the direction of the electron flow was from the large substrate to the small substrate for joint 1, while it was from the small substrate to the large substrate for joint 6, it is reasonable to find the phenomena as the above illustrated. For solder joint 1, as shown in Fig. 4b, the IMC layer at the small substrate side is composed of a Cu 3 Sn IMC layer (near the Cu pad side) about 2.4 lm thick and a Cu 6 Sn 5 IMC layer (near the solder side) about 4.2 lm thick. By contrast, the IMC layer at the large substrate side (as shown in Fig. 4c) is mainly the Cu 6 Sn 5 phase with a thickness of more than 20 lm. About 12 lm of the Cu pad at the large substrate side had been consumed during the test. The IMC layer at the small substrate side is thinner than that at the large substrate side. The enhanced effect of the electric current and the barrier effect of the Bi-rich layer played important roles in the growth of the Cu-Sn IMC layer in

3 1092 J Mater Sci: Mater Electron (2010) 21: Fig. 1 a Optical images of a small substrate (chip) and large substrate (substrate) before the assembly, b optical image of a sample prepared for subsequent tests, and c schematic diagram of electrified daisy chain Table 1 Thermal conductivities and electrical resistivities for the materials used in the simulation Material Thermal conductivity (W/m C) Resistivity (lx cm) TCR (10-3 / C) Cu FR4 0.7 Sn58Bi Sn58Bi/Cu solder joints, which has been reported in our previous study [11]. It is worth noting that big voids formed at the interface between the Bi-rich phase and the Sn-rich phase. However, the solder joints chain did not open after the test. According to Fig. 4a, the solder joint is still partly connected. The formation of the crack can be ascribed to substantial Cu-Sn IMC growth in the solder joint which consumed a large amount of Sn atoms. Fig. 2 SEM image of one solder joint aged at 110 C without current stressing for 480 h

4 J Mater Sci: Mater Electron (2010) 21: Fig. 3 SEM images of Sn58Bi solder joints in one daisy chain under 2.5A DC current stressing at 110 C for 480 h, the red arrows indicate the electron current Fig. 4 SEM images of solder joints 1 and 6 under 2.5 A current stressing at 110 C for 480 h: a cross section of joint 1, b local magnified image of joint 1 at the small substrate side, c local magnified image of joint 1 at the large substrate side, d cross section of joint 6, e local magnified image of joint 6 at the small substrate side, and f local magnified image of joint 6 at the small substrate side For solder joint 6, as the direction of the electron flow was from the small substrate (cathode) to the large substrate (anode), most of the Bi atoms accumulated at the large substrate side. The IMC layer at the cathode is mainly Cu 6 Sn 5 with a thickness of about 8.3 lm. By contrast, the IMC layer at the anode is mainly Cu 3 Sn with a thickness of 3.1 lm, and only a very thin (about 0.5 lm) Cu 6 Sn 5 formed at the solder side. It is worth noting that more than 90% of the Bi atoms had accumulated at the anode side for joint 1 and joint 6, which was due to the rapid transfer of the Bi atoms driven by the electron flow. Also, the IMC formed at the anode

5 1094 J Mater Sci: Mater Electron (2010) 21: side is composed of the Cu 3 Sn phase and Cu 6 Sn 5 phase, it is different from the results reported in previous study [11], which showed the main phase of the IMC at the interface of the Cu/Sn58Bi solder is Cu 5 Sn 6. Two causes are responsible for this. One is the barrier effect of the Bi-rich layer. After long periods of current stressing, the Bi-rich layer became thick enough to block the transfer of Sn atoms and further IMC development was limited due to the lack of Sn atoms at the anode side, while more Cu atoms could be supplied by the Cu pad and more Cu 6 Sn 5 IMC turned into Cu 3 Sn. As the Bi-rich layer developed in the joints illustrated in the previous report was thinner than that in solder joint 1 and joint 6 considered here, substantial amounts of Sn atoms in the bulk solder could diffuse to the interface and react with the Cu atoms to form Cu 6 Sn 5. The other reason is that the actual annealing temperature in the solder joints in the previous report was lower than that in the case considered here. According to Laurila et al. [16], the high temperature will be helpful for the growth of the Cu 3 Sn. It was also reported that Kirkendall voids always tend to form inside Cu 3 Sn during the anneling of the Cu/solder [16, 17] interconnections. But no Kirkendall voids could be observed in our results, which maybe due to the shorter annealing time in this test than that cited in the above literature [16, 17]. For the cathode side, there were enough Sn atoms supplied for the Cu-Sn IMC formation and Cu 6 Sn 5 IMC was the main product. Figure 5 gives the magnified images of solder joint 3 and joint 4. The upper side of the image is the small substrate while the lower side is the large substrate side. There is no big difference in the microstructure between the two solder joint, except the Bi separation occurred at opposite substrate sides. The average thickness of the Bi-rich layer in solder joint 3 is about 24 lm, and that in solder joint 4 is about 22 lm. A layer of Cu 3 Sn IMC with a thickness of about 1 lm was detected at the interface of the anode side for each joint, but the main phase of the IMC layer is Cu 6 Sn 5. The IMC at the cathode interface is mainly Cu 6 Sn 5 for each solder joint. Figure 6 shows the detailed microstructure of solder joint 2. The electric current passed by on the top of the solder bump instead of entering into it. Despite the current did not pass through the solder joint, a Bi-rich phase also formed at the larger substrate side during the test. A major difference of the microstructure from the joints those shown in Figs. 4 and 5 is that two Bi-rich phase regions can be observed in Fig. 6. One Bi-rich phase region formed at the interface of the large substrate (as shown in Fig. 6d). The other one with small area formed at one side of the contact between the solder and the Cu trace on the small substrate (as shown in Fig. 6c), while the Sn-rich phase formed at the other side of the contact between the solder and the Cu trace (as shown in Fig. 6b). The mechanism of formation of the Bi-rich areas in solder joint 2 may be ascribed to the TM and the electron charge swirling, and this will be discussed in a following section. The average thickness of the Bi-rich layer at the large substrate side is about 15.5 lm. The IMC layer at the small substrate is about 4.9 lm, while that at the large substrate is about 4.3 lm which is only a slightly thinner than that at the small substrate side. Figure 7 shows the microstructure of solder joint 5. During the test, there was no current passing through this solder joint or pass by the Cu pads those contacted with the solder bump. It is clear that a Bi-rich layer with an average thickness about 5.9 lm formed at the large substrate side, which is thinner than that in solder joint 2, which also indicates that the migration of Bi in this joint is not prominent. No obvious Sn-rich phase can be observed at the small substrate side. As the Sn-rich phase is induced by the migration of Bi, the small amount of Bi atoms migration towards the large substrate could not leave a visible Sn-rich phase at the small substrate side. IMC layers at the two interfaces are nearly the same thickness, with the thickness of about 3.4 lm. For the Sn58Bi solder joint with current stressing, the polarity effect of the electric current and the barrier effect of the Bi-rich layer played critical roles in the growth of the IMC layers, so the thickness of Fig. 5 SEM images of the cross section of solder joints under 2.5 A DC current stressing at 110 C for 480 h: a solder joint 3 and b solder 4

6 J Mater Sci: Mater Electron (2010) 21: Fig. 6 SEM images of solder joint 2: a cross section of solder joint 2 with the electric current passing by on top of it, b, c and d local magnified micrographs of each indicated parts IMC layer developed at the anode side is not the same as that at the cathode side. For solder joint 5, no electric current affected the IMC growth, and the barrier effect is not obvious for a Bi-rich layer with a thickness of 5.9 lm, so the IMC layers at the two sides had similar thicknesses. As a thermal gradient was created across the small substrate and the large substrate, the accumulation of the Bi atoms at the large substrate side was due to the TM effect in the solder joint. This will be discussed later. Figure 8 gives the FEM simulation results of the current density distribution in solder joints 1 6 with a 2.5 A DC current applied. The calculated average current density in the powered solder joints is A/cm 2. According to the simulation results, the current density in most parts of solder joints 1, 3, 4, and 6 reached above A/cm 2. Current crowding was existed at the contact areas between the Cu traces and the solder bumps. The current density at the entry location was about 10 times of the average current density. For the joint 2, the current passing by the Cu trace on the top of the bump, it is clear that current crowding also existed at the entry location and exit location. The current density in most part of solder joint 2 was above 500 A/cm 2, which was due to the effect of electron charge swirling. The effect of electron charge swirling has been reported by Lai et al. [18], their results showed that for a solder joint with the electric current passing by on top of it, the induced vertical current density field leads to the initiation of a void around the UBM. As no current passed by solder joint 5, no current density existed in solder joint 5. In order to understand the effect of electron charge swirling, a vector display of the current density distribution in solder joint 2 is shown in Fig. 9. It is clear that a swirling current density field was created in the solder bump. The magnitude of the current density in the part near the Cu trace on the top of the solder bump was comparable to that on other solder joints having the electric current going through them. Figure 10 shows the FEM simulation results of temperature distribution in the test module supplied with a 2.5 A DC current at an ambient temperature of 110 C. It is obvious that a temperature differences about 40 C existed between the small substrate and the large substrate. The calculated local temperatures are larger than those measured by thermocouple. This may be because the measured locations are the outside surfaces of the test module. Figure 11 shows the detailed temperature distributions in solder joints 1 6. Thermal gradient and the maximum temperature in each solder joint is shown in Table 2. Itis clear that the largest thermal gradient existed in solder joint 2 during the test. 3.2 Discussion For solder joint 1 and solder joint 6, the maximum temperatures in the solder are and C, respectively.

7 1096 J Mater Sci: Mater Electron (2010) 21: Fig. 8 Current density distribution in solder joints (a) solder joints 1 3 and (b) solder joints 4 6 (units: A/m 2 ) Fig. 7 SEM images of solder joint 5: a cross section of solder joint 5 (without current stressing), b local magnified micrograph of the interface at the small substrate side, and c local magnified micrograph of the interface at the large substrate side The thermal gradient across joint 1 is C/cm, while that across solder joint 6 is about twice of this. As Bi atoms migrate towards the lower temperature side when the solder joint undergoes the thermal gradient [12], the TM and EM of Bi in solder joint 1 are in the opposite directions, Fig. 9 Vector show of the current density distribution in solder joints 2 (units: A/m 2 ) while those are in the same direction for the solder joint 6. However, EM played the overwhelming effect on the migration of Bi atoms for solder joints 1 and 6, it is rational

8 J Mater Sci: Mater Electron (2010) 21: Table 2 Thermal gradient and the maximum temperature in solder joints Solder joint Thermal gradient ( C/cm) Maximum temperature ( C) Fig. 10 Temperature distribution in the test module (units: C) to observe that most of the Bi atoms in the solder accumulated at the small substrate side for joint 1. For solder joint 6, as the thermal gradient is in the same direction of Fig. 11 Temperature distribution in solder joints 1 6 (units: C)

9 1098 J Mater Sci: Mater Electron (2010) 21: the electron flow, TM assisted the effects of EM on the migration of Bi. For solder joint 2, three factors played important effects on the migration of Bi. One is the effect of the electron charge swirling, which induced a current density above 500 A/cm 2 in the solder bump. The other is that a thermal gradient with magnitude of C/cm was created across the solder bump during the test, TM was in the direction from the small substrate to the large substrate side, which drove Bi atoms moving towards the large substrate. The last factor is that the maximum temperature in this joint is about C, and this temperature is very near the melting point of Sn58Bi solder alloy. As the migration of Bi is diffusion-controlled process, the temperature played an important effect on the diffusion of Bi atoms. For the above reasons, a Bi-rich layer about 15.5 lm thick formed at the large substrate in solder joint 2. The Bi-rich phase which formed at the contact of Cu trace with the solder bump can be ascribed to the electron charge swirling. For the joint 5, a thermal gradient with magnitude of C/cm existed in it, TM is the only driving force for Bi migration. According to the temperature simulation results, the thermal gradient and the maximum temperature are smaller than those for solder joint 2, so a thinner Bi-rich layer with thickness of 5.9 lm formed during the test, which is rational. For solder joint 3, there was no temperature difference in the solder bump, only EM induced the migration of Bi. For the solder joint 4, a thermal gradient about C/cm existed in the bump, but it is in the opposite direction of EM. Despite a maximum temperature of 142 C, since the TM counteracted with EM, the migration of Bi was not dramatic and an even thinner layer formed than that in solder joint 3. It is worth noting that the maximum simulation temperature in the solder joint is above the melting point of Sn58Bi alloy, but no obvious melting of the solder joint can be observed. This may be due to the counteract affect of the TM in the solder joint. 4 Conclusions TM and EM in Sn58Bi BGA solder joints were investigated using a particular designed daisy chain supplied with a 2.5 A DC current at 110 C. The individual effects of TM and EM, and combined effects of TM and EM were detected. Driven by the electric current, the Bi migrated towards the anode side and formed a Bi-rich layer therein. With a thermal gradient, the Bi atoms tended to migrate towards the lower temperature side. When the effects of TM and EM were in same direction, TM assisted EM in the migration of Bi, otherwise TM counteracted the effect of EM. The effects of electron charge swirling were detected when the electric current passed by the Cu trace on the top of the solder bump instead of entering into it. After stressed for 480 h, two Bi-rich areas formed in the solder bump. One Bi-rich area formed at one side of the contact between the Cu trace and the solder bump. The other formed at the large substrate side (low temperature side). The electron charge swirling and TM played combined effects on the accumulation of Bi. For the joint without current passing by or passing through, only TM induced the migration of the Bi atoms. A Bi-rich layer with a thickness about 5.9 lm formed at the low temperature side, which was thinner than that with the current passing by the Cu trace on the top of the solder bump. Acknowledgments This project has been supported by RGC General Research Fund (GRF) of Hong Kong (Project No ). References 1. K.N. Tu, J. Appl. Phys. 94, 5451 (2003) 2. H. Ye, C. Basaran, D.C. Hopkins, Appl. Phys. Lett. 82, 1045 (2003) 3. A.T. Huang, A.M. Gusak, Y.S. Lai, K.N. Tu, Appl. Phys. Lett. 88, (2006) 4. F.Y. Ouyang, K.N. Tu, Y.-S. Lai, A.M. Gusak, Appl. Phys. Lett. 89, (2006) 5. A.T. Huang, K.N. Tu, Y.S. Lai, J. Appl. Phys. 100, (2006) 6. D. Yang, B.Y. Wu, Y.C. Chan, K.N. Tu, J. Appl. Phys. 102, (2007) 7. K.J. Puttlitz, K.A. Stalter, Handbook of Lead-Free Solder Technology for Microelectronic Assemblies, vol. 9 (Marcel Dekker, Inc., New York, 2004), p Q.L. Yang, J.K. Shang, J. Electron. Mater. 34, 1363 (2005) 9. L.-T. Chen, C.-M. Chen, J. Mater. Res. 21, 962 (2006) 10. C.-M. Chen, L.-T. Chen, Y.-S. Lin, J. Electron. Mater. 36, 168 (2007) 11. X. Gu, D. Yang, Y.C. Chan, B.Y. Wu, J. Mater. Res. 23, 2591 (2008) 12. X. Gu, Y.C. Chan, J. Appl. Phys. 105, (2009) 13. D.R. Frear, S.N. Burchett, H.S. Morgan, J.H. Lau, The Mechanics of Solder Alloy Interconnects, vol. 3 (Van Nostrand Reinhold, New York, 1994), p Indium Corporation product data sheet, products/alloy_sorted_by_temperature.pdf 15. S.W. Liang, Y.W. Chang, C. Chen, J. Electron. Mater. 36, 159 (2007) 16. T. Laurila, V. Vuorinen, J.K. Kivilahti, Mater. Sci. Eng. R 49, 1 (2005) 17. K. Zeng, R. Stierman, T.-C. Chiu, D. Edwards, K. Ano, K.N. Tu, J. Appl. Phys. 97, (2005) 18. Y.S. Lai, C.W. Lee, C.L. Kao, J. Electron. Pack. 129, 56 (2007)

Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni P /Au metallization pads

Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni P /Au metallization pads JOURNAL OF APPLIED PHYSICS VOLUME 96, NUMBER 8 15 OCTOBER 2004 Electromigration failure mechanisms for SnAg3.5 solder bumps on Ti/Cr-Cu/Cu and Ni P /Au metallization pads T. L. Shao, Y. H. Chen, S. H.

More information

Dissolution of electroless Ni metallization by lead-free solder alloys

Dissolution of electroless Ni metallization by lead-free solder alloys Journal of Alloys and Compounds 388 (2005) 75 82 Dissolution of electroless Ni metallization by lead-free solder alloys Ahmed Sharif, Y.C. Chan, M.N. Islam, M.J. Rizvi Department of Electronic Engineering,

More information

Interfacial reactions of BGA Sn 3.5%Ag 0.5%Cu and Sn 3.5%Ag solders during high-temperature aging with Ni/Au metallization

Interfacial reactions of BGA Sn 3.5%Ag 0.5%Cu and Sn 3.5%Ag solders during high-temperature aging with Ni/Au metallization Materials Science and Engineering B 113 (2004) 184 189 Interfacial reactions of BGA Sn 3.5%Ag 0.5%Cu and Sn 3.5%Ag solders during high-temperature aging with Ni/Au metallization Ahmed Sharif, M.N. Islam,

More information

Bi Layer Formation at the Anode Interface in Cu/Sn 58Bi/Cu Solder Joints with High Current Density

Bi Layer Formation at the Anode Interface in Cu/Sn 58Bi/Cu Solder Joints with High Current Density J. Mater. Sci. Technol., 2012, 28(1), 46 52. Bi Layer Formation at the Anode Interface in Cu/Sn 58Bi/Cu Solder Joints with High Current Density Hongwen He 1), Haiyan Zhao 1), Fu Guo 2) and Guangchen Xu

More information

Electromigration Behavior of through-si-via (TSV) Interconnect for 3-D Flip Chip Packaging

Electromigration Behavior of through-si-via (TSV) Interconnect for 3-D Flip Chip Packaging Materials Transactions, Vol. 51, No. 5 (2010) pp. 1020 to 1027 #2010 The Japan Institute of Metals EXPRESS REGULAR ARTICLE Electromigration Behavior of through-si-via (TSV) Interconnect for 3-D Flip Chip

More information

Lead-Free Solder Bump Technologies for Flip-Chip Packaging Applications

Lead-Free Solder Bump Technologies for Flip-Chip Packaging Applications Lead-Free Solder Bump Technologies for Flip-Chip Packaging Applications Zaheed S. Karim 1 and Jim Martin 2 1 Advanced Interconnect Technology Ltd. 1901 Sunley Centre, 9 Wing Yin Street, Tsuen Wan, Hong

More information

Interfacial Reactions between the Sn-9Zn Solder and Au/Ni/SUS304 Multi-layer Substrate

Interfacial Reactions between the Sn-9Zn Solder and Au/Ni/SUS304 Multi-layer Substrate , July 6-8, 2011, London, U.K. Interfacial Reactions between the Sn-9Zn Solder and Au/Ni/SUS304 Multi-layer Substrate *Yee-Wen Yen 1, Chien-Chung Jao 2, Kuo-Sing Chao 1, Shu-Mei Fu Abstract Sn-9Zn lead-free

More information

Microelectronic Engineering

Microelectronic Engineering Microelectronic Engineering 86 (2009) 2347 2353 Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: www.elsevier.com/locate/mee Effect of small Sn 3.5Ag 0.5Cu additions

More information

Study of the Interface Microstructure of Sn-Ag-Cu Lead-Free Solders and the Effect of Solder Volume on Intermetallic Layer Formation.

Study of the Interface Microstructure of Sn-Ag-Cu Lead-Free Solders and the Effect of Solder Volume on Intermetallic Layer Formation. Study of the Interface Microstructure of Sn-Ag-Cu Lead-Free Solders and the Effect of Solder Volume on Intermetallic Layer Formation. B. Salam +, N. N. Ekere, D. Rajkumar Electronics Manufacturing Engineering

More information

Influence of Thermomigration on Lead-Free Solder Joint Mechanical Properties

Influence of Thermomigration on Lead-Free Solder Joint Mechanical Properties Mohd F. Abdulhamid Cemal Basaran 1 e-mail: cjb@buffalo.edu Electronic Packaging Laboratory, University at Buffalo, SUNY, Buffalo, NY 14260 Influence of Thermomigration on Lead-Free Solder Joint Mechanical

More information

IEEE TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY PART B, VOL. 20, NO. 1, FEBRUARY

IEEE TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY PART B, VOL. 20, NO. 1, FEBRUARY IEEE TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY PART B, VOL. 20, NO. 1, FEBRUARY 1997 87 Effect of Intermetallic Compounds on the Thermal Fatigue of Surface Mount Solder Joints

More information

Failure Modes of Flip Chip Solder Joints Under High Electric Current Density

Failure Modes of Flip Chip Solder Joints Under High Electric Current Density C. Basaran e-mail: cjb@buffalo.edu H. Ye D. C. Hopkins Electronic Packaging Laboratory, University at Buffalo, SUNY, Buffalo, New York D. Frear J. K. Lin Freescale semiconductor Inc., Tempe, Arizona Failure

More information

Y.C. Chan *, D.Y. Luk

Y.C. Chan *, D.Y. Luk Microelectronics Reliability 42 (2002) 1185 1194 www.elsevier.com/locate/microrel Effects of bonding parameters on the reliability performance of anisotropic conductive adhesive interconnects for flip-chip-on-flex

More information

Interfacial Reactions between Ni-Zn Alloy Films and Lead-free Solders

Interfacial Reactions between Ni-Zn Alloy Films and Lead-free Solders Interfacial Reactions between -Zn Alloy Films and Lead-free Solders Pay Ying Chia 1, A.S.M.A. Haseeb 2 University of Malaya Department of Mechanical Engineering, University of Malaya, 50603, Kuala Lumpur,

More information

Study of anisotropic conductive adhesive joint behavior under 3-point bending

Study of anisotropic conductive adhesive joint behavior under 3-point bending Microelectronics Reliability 45 (2005) 589 596 www.elsevier.com/locate/microrel Study of anisotropic conductive adhesive joint behavior under 3-point bending M.J. Rizvi a,b, Y.C. Chan a, *, C. Bailey b,h.lu

More information

Advanced Analytical Techniques for Semiconductor Assembly Materials and Processes. Jason Chou and Sze Pei Lim Indium Corporation

Advanced Analytical Techniques for Semiconductor Assembly Materials and Processes. Jason Chou and Sze Pei Lim Indium Corporation Advanced Analytical Techniques for Semiconductor Assembly Materials and Processes Jason Chou and Sze Pei Lim Indium Corporation Agenda Company introduction Semiconductor assembly roadmap challenges Fine

More information

1 Thin-film applications to microelectronic technology

1 Thin-film applications to microelectronic technology 1 Thin-film applications to microelectronic technology 1.1 Introduction Layered thin-film structures are used in microelectronic, opto-electronic, flat panel display, and electronic packaging technologies.

More information

SCV Chapter, CPMT Society, IEEE September 14, Voids at Cu / Solder Interface and Their Effects on Solder Joint Reliability

SCV Chapter, CPMT Society, IEEE September 14, Voids at Cu / Solder Interface and Their Effects on Solder Joint Reliability Voids at / Solder Interface and Their Effects on Solder Joint Reliability Zequn Mei, Mudasir Ahmad, Mason Hu, Gnyaneshwar Ramakrishna Manufacturing Technology Group Cisco Systems, Inc. Acknowledgement:

More information

Copyright 2009 Year IEEE. Reprinted from 2009 Electronic Components and Technology Conference. Such permission of the IEEE does not in any way imply

Copyright 2009 Year IEEE. Reprinted from 2009 Electronic Components and Technology Conference. Such permission of the IEEE does not in any way imply Copyright 2009 Year IEEE. Reprinted from 2009 Electronic Components and Technology Conference. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Institute of Microelectronics

More information

Fabrication of Smart Card using UV Curable Anisotropic Conductive Adhesive (ACA) Part I: Optimization of the curing conditions

Fabrication of Smart Card using UV Curable Anisotropic Conductive Adhesive (ACA) Part I: Optimization of the curing conditions Fabrication of Smart Card using UV Curable Anisotropic Conductive Adhesive (ACA) Part I: Optimization of the curing conditions K. K. Lee, K T Ng, C. W. Tan, *Y. C. Chan & L. M. Cheng Department of Electronic

More information

Suppression of Cu 3 Sn and Kirkendall voids at Cu/Sn-3.5Ag solder joints by adding a small amount of Ge

Suppression of Cu 3 Sn and Kirkendall voids at Cu/Sn-3.5Ag solder joints by adding a small amount of Ge J Mater Sci: Mater Electron (2012) 23:56 60 DOI 10.1007/s10854-011-0412-z Suppression of Cu 3 Sn and Kirkendall voids at Cu/Sn-3.5Ag solder joints by adding a small amount of Ge Chun Yu Yang Yang Peilin

More information

EFFECT OF Ag COMPOSITION, DWELL TIME AND COOLING RATE ON THE RELIABILITY OF Sn-Ag-Cu SOLDER JOINTS. Mulugeta Abtew

EFFECT OF Ag COMPOSITION, DWELL TIME AND COOLING RATE ON THE RELIABILITY OF Sn-Ag-Cu SOLDER JOINTS. Mulugeta Abtew EFFECT OF Ag COMPOSITION, DWELL TIME AND COOLING RATE ON THE RELIABILITY OF Sn-Ag-Cu SOLDER JOINTS Mulugeta Abtew Typical PCB Assembly Process PCB Loading Solder Paste Application Solder Paste Inspection

More information

The Effect of Cu and Ni on the Structure and Properties of the IMC Formed by the Reaction of Liquid Sn-Cu Based Solders with Cu Substrate

The Effect of Cu and Ni on the Structure and Properties of the IMC Formed by the Reaction of Liquid Sn-Cu Based Solders with Cu Substrate WDS'08 Proceedings of Contributed Papers, Part III, 220 224, 2008. ISBN 978-80-7378-067-8 MATFYZPRESS The Effect of Cu and Ni on the Structure and Properties of the IMC Formed by the Reaction of Liquid

More information

Effects of Current Stressing on Shear Properties of Sn-3.8Ag-0.7Cu Solder Joints

Effects of Current Stressing on Shear Properties of Sn-3.8Ag-0.7Cu Solder Joints J. Mater. Sci. Technol., 2010, 26(8), 737-742. Effects of Current Stressing on Shear Properties of Sn-3.8Ag-0.7Cu Solder Joints X.J. Wang 1), Q.L. Zeng 1), Q.S. Zhu 1), Z.G. Wang 1) and J.K. Shang 1,2)

More information

WF6317. A superactive low-volatile/high heat-resistant water-soluble flux for ball soldering

WF6317. A superactive low-volatile/high heat-resistant water-soluble flux for ball soldering WF637 A superactive low-volatile/high heat-resistant water-soluble flux for ball soldering Low viscosity and high tacking power stabilize ball holding force and ensures excellent solder wettability Easy

More information

Correlations between IMC thickness and three factors in Sn-3Ag-0.5Cu alloy system

Correlations between IMC thickness and three factors in Sn-3Ag-0.5Cu alloy system Correlations between IMC thickness and three factors in Sn-3Ag-0.5Cu alloy system MENG Gong-ge( 孟工戈 ) 1, T. Takemoto 2, H. Nishikawa 2 1. College of Materials Science and Engineering, Harbin University

More information

IMPACT OF MICROVIA-IN-PAD DESIGN ON VOID FORMATION

IMPACT OF MICROVIA-IN-PAD DESIGN ON VOID FORMATION IMPACT OF MICROVIA-IN-PAD DESIGN ON VOID FORMATION Frank Grano, Felix Bruno Huntsville, AL Dana Korf, Eamon O Keeffe San Jose, CA Cheryl Kelley Salem, NH Joint Paper by Sanmina-SCI Corporation EMS, GTS

More information

Endoscopic Inspection of Solder Joint Integrity in Chip Scale Packages

Endoscopic Inspection of Solder Joint Integrity in Chip Scale Packages Endoscopic Inspection of Joint Integrity in Chip Scale Packages Y.C. Chan, C.W. Tang and P.L. Tu Department of Electronic Engineering City University of Hong Kong ABSTRACT This paper reports, for the first

More information

Interface Reaction Between Electroless Ni Sn P Metallization and Lead-Free Sn 3.5Ag Solder with Suppressed Ni 3 P Formation

Interface Reaction Between Electroless Ni Sn P Metallization and Lead-Free Sn 3.5Ag Solder with Suppressed Ni 3 P Formation Journal of ELECTRONIC MATERIALS, Vol. 43, No. 11, 2014 DOI: 10.1007/s11664-014-3306-z Ó 2014 The Minerals, Metals & Materials Society Interface Reaction Between Electroless Ni Sn P Metallization and Lead-Free

More information

Effects of Bi Content on Mechanical Properties and Bump Interconnection Reliability of Sn-Ag Solder Alloys

Effects of Bi Content on Mechanical Properties and Bump Interconnection Reliability of Sn-Ag Solder Alloys Effects of Bi Content on Mechanical Properties and Bump Interconnection Reliability of Sn-Ag Solder Kazuki Tateyama, Hiroshi Ubukata*, Yoji Yamaoka*, Kuniaki Takahashi*, Hiroshi Yamada** and Masayuki Saito

More information

Influence of Thermal Cycling on the Microstructure and Shear Strength of Sn3.5Ag0.75Cu and Sn63Pb37 Solder Joints on Au/Ni Metallization

Influence of Thermal Cycling on the Microstructure and Shear Strength of Sn3.5Ag0.75Cu and Sn63Pb37 Solder Joints on Au/Ni Metallization 68 J. Mater. Sci. Technol., Vol.23 No.1, 2007 Influence of Thermal Cycling on the Microstructure and Shear Strength of Sn3.5Ag0.75Cu and Sn63Pb37 Solder Joints on Au/Ni Metallization Hongtao CHEN 1,2),

More information

Effects of Flux and Reflow Parameters on Lead-Free Flip Chip Assembly. Sandeep Tonapi 1 Doctoral Candidate

Effects of Flux and Reflow Parameters on Lead-Free Flip Chip Assembly. Sandeep Tonapi 1 Doctoral Candidate Effects of Flux and Reflow Parameters on Lead-Free Flip Chip Assembly Sandeep Tonapi 1 Doctoral Candidate Peter Borgesen, Ph.D. 2 Manager, Area Array Consortium K. Srihari, Ph.D. 1 Professor, Department

More information

Composition/wt% Bal SA2 (SABI) Bal SA3 (SABI + Cu) Bal

Composition/wt% Bal SA2 (SABI) Bal SA3 (SABI + Cu) Bal Improving Thermal Cycle and Mechanical Drop Impact Resistance of a Lead-free Tin-Silver-Bismuth-Indium Solder Alloy with Minor Doping of Copper Additive Takehiro Wada 1, Seiji Tsuchiya 1, Shantanu Joshi

More information

Microelectronics Reliability

Microelectronics Reliability Microelectronics Reliability 51 (2011) 975 984 Contents lists available at ScienceDirect Microelectronics Reliability journal homepage: www.elsevier.com/locate/microrel Microstructure, thermal analysis

More information

Unique Failure Modes from use of Sn-Pb and Lead-Free (mixed metallurgies) in PCB Assembly: CASE STUDY

Unique Failure Modes from use of Sn-Pb and Lead-Free (mixed metallurgies) in PCB Assembly: CASE STUDY Unique Failure Modes from use of Sn-Pb and Lead-Free (mixed metallurgies) in PCB Assembly: CASE STUDY Frank Toth, and Gary F. Shade; Intel Corporation, Hillsboro, OR, USA {francis.toth.jr@intel.com, (503)-696-1546}

More information

Thermomigration in lead-free solder joints. Mohd F. Abdulhamid, Shidong Li and Cemal Basaran*

Thermomigration in lead-free solder joints. Mohd F. Abdulhamid, Shidong Li and Cemal Basaran* Int. J. Materials and Structural Integrity, Vol. 2, Nos. 1/2, 2008 11 Thermomigration in lead-free solder joints Mohd F. Abdulhamid, Shidong Li and Cemal Basaran* Electronic Packaging Laboratory University

More information

PCB Technologies for LED Applications Application note

PCB Technologies for LED Applications Application note PCB Technologies for LED Applications Application note Abstract This application note provides a general survey of the various available Printed Circuit Board (PCB) technologies for use in LED applications.

More information

Microelectronics Reliability

Microelectronics Reliability Microelectronics Reliability 49 (2009) 746 753 Contents lists available at ScienceDirect Microelectronics Reliability journal homepage: www.elsevier.com/locate/microrel Interfacial microstructure and shear

More information

White Paper Quality and Reliability Challenges for Package on Package. By Craig Hillman and Randy Kong

White Paper Quality and Reliability Challenges for Package on Package. By Craig Hillman and Randy Kong White Paper Quality and Reliability Challenges for Package on Package By Craig Hillman and Randy Kong Background Semiconductor technology advances have been fulfilling Moore s law for many decades. However,

More information

Aging Treatment Characteristics of Shear Strength in Micro Solder Bump

Aging Treatment Characteristics of Shear Strength in Micro Solder Bump Materials Transactions, Vol. 43, No. 2 (22) pp. 3234 to 3238 c 22 The Japan Institute of Metals Aging Treatment Characteristics of Shear Strength in Micro Solder Bump Chong-Hee Yu, Kyung-Seob Kim 2, Yong-Bin

More information

Manufacturing and Reliability Modelling

Manufacturing and Reliability Modelling Manufacturing and Reliability Modelling Silicon Chip C Bailey University of Greenwich London, England Printed Circuit Board Airflow Temperature Stress at end of Reflow Stress Product Performance in-service

More information

IMPLEMENTATION OF A FULLY MOLDED FAN-OUT PACKAGING TECHNOLOGY

IMPLEMENTATION OF A FULLY MOLDED FAN-OUT PACKAGING TECHNOLOGY IMPLEMENTATION OF A FULLY MOLDED FAN-OUT PACKAGING TECHNOLOGY B. Rogers, C. Scanlan, and T. Olson Deca Technologies, Inc. Tempe, AZ USA boyd.rogers@decatechnologies.com ABSTRACT Fan-Out Wafer-Level Packaging

More information

Effects of Pd Addition on Au Stud Bumps/Al Pads Interfacial Reactions and Bond Reliability

Effects of Pd Addition on Au Stud Bumps/Al Pads Interfacial Reactions and Bond Reliability Journal of ELECTRONIC MATERIALS, Vol. 33, No. 10, 2004 Special Issue Paper Effects of Pd Addition on Au Stud Bumps/Al Pads Interfacial Reactions and Bond Reliability HYOUNG-JOON KIM, 1,3 JONG-SOO CHO,

More information

IMPACT OF LEAD-FREE COMPONENTS AND TECHNOLOGY SCALING FOR HIGH RELIABILITY APPLICATIONS

IMPACT OF LEAD-FREE COMPONENTS AND TECHNOLOGY SCALING FOR HIGH RELIABILITY APPLICATIONS IMPACT OF LEAD-FREE COMPONENTS AND TECHNOLOGY SCALING FOR HIGH RELIABILITY APPLICATIONS Chris Bailey, Ph.D. University of Greenwich London, United Kingdom c.bailey@gre.ac.uk ABSTRACT Semiconductor technology

More information

Project Proposal. Cu Wire Bonding Reliability Phase 3 Planning Webinar. Peng Su June 6, 2014

Project Proposal. Cu Wire Bonding Reliability Phase 3 Planning Webinar. Peng Su June 6, 2014 Project Proposal Cu Wire Bonding Reliability Phase 3 Planning Webinar Peng Su June 6, 2014 Problem Statement Background Work of the inemi Cu wire reliability project identified that bonding quality and

More information

Jeong et al.: Effect of the Formation of the Intermetallic Compounds (1/7)

Jeong et al.: Effect of the Formation of the Intermetallic Compounds (1/7) Jeong et al.: Effect of the Formation of the Intermetallic Compounds (1/7) Effect of the Formation of the Intermetallic Compounds between a Tin Bump and an Electroplated Copper Thin Film on both the Mechanical

More information

Mater. Res. Soc. Symp. Proc. Vol Materials Research Society

Mater. Res. Soc. Symp. Proc. Vol Materials Research Society Mater. Res. Soc. Symp. Proc. Vol. 940 2006 Materials Research Society 0940-P13-12 A Novel Fabrication Technique for Developing Metal Nanodroplet Arrays Christopher Edgar, Chad Johns, and M. Saif Islam

More information

Controlling the Microstructures from the Gold-Tin Reaction

Controlling the Microstructures from the Gold-Tin Reaction Controlling the Microstructures from the Gold-Tin Reaction J. Y. Tsai, C. W. Chang, Y. C. Shieh, Y. C. Hu, and C. R. Kao* Department of Chemical & Materials Engineering National Central University Chungli

More information

' Department of Electronic Engineering

' Department of Electronic Engineering Degradation Mechanisms of Anisotropic Conductive Adhesive Joints for Flip Chip on Flex Applications Y.C. Chad, K.C. Hung', C.W. Tang', and C.M.L. Wu* ' Department of Electronic Engineering * Department

More information

Thermo-Mechanical FEM Analysis of Lead Free and Lead Containing Solder for Flip Chip Applications

Thermo-Mechanical FEM Analysis of Lead Free and Lead Containing Solder for Flip Chip Applications Thermo-Mechanical FEM Analysis of Lead Free and Lead Containing Solder for Flip Chip Applications M. Gonzalez 1, B. Vandevelde 1, Jan Vanfleteren 2 and D. Manessis 3 1 IMEC, Kapeldreef 75, 3001, Leuven,

More information

Chips Face-up Panelization Approach For Fan-out Packaging

Chips Face-up Panelization Approach For Fan-out Packaging Chips Face-up Panelization Approach For Fan-out Packaging Oct. 15, 2015 B. Rogers, D. Sanchez, C. Bishop, C. Sandstrom, C. Scanlan, TOlson T. REV A Background on FOWLP Fan-Out Wafer Level Packaging o Chips

More information

Calorimetric Study of the Energetics and Kinetics of Interdiffusion in Cu/Cu 6. Film Diffusion Couples. Department of Physics

Calorimetric Study of the Energetics and Kinetics of Interdiffusion in Cu/Cu 6. Film Diffusion Couples. Department of Physics Calorimetric Study of the Energetics and Kinetics of Interdiffusion in Cu/Cu 6 Thin Film Diffusion Couples K. F. Dreyer, W. K. Niels, R. R. Chromik, D. Grosman, and E. J. Cotts Department of Physics Binghamton

More information

New Pb-Free Solder Alloy for Demanding Applications. Presented by Karl Seelig, VP Technology, AIM

New Pb-Free Solder Alloy for Demanding Applications. Presented by Karl Seelig, VP Technology, AIM New Pb-Free Solder Alloy for Demanding Applications Presented by Karl Seelig, VP Technology, AIM Why REL? The evolution and expansion of electronics into more harsh operating environments performing more

More information

Available online at ScienceDirect. Procedia Engineering 79 (2014 )

Available online at  ScienceDirect. Procedia Engineering 79 (2014 ) Available online at www.sciencedirect.com ScienceDirect Procedia Engineering 79 (2014 ) 333 338 37th National Conference on Theoretical and Applied Mechanics (37th NCTAM 2013) & The 1st International Conference

More information

INTERFLUX ELECTRONICS NV

INTERFLUX ELECTRONICS NV Reflow soldering temperature profiling Min : 30sec Max : 120sec Max : +4 C/sec Max : 250 C Min : 230 C Min: +0,5 C/sec Min : +1 C/sec Max : +3 C/sec Max : +1 C/sec Max : -6 C/sec Min : -2 C/sec Min : +1

More information

System Level Effects on Solder Joint Reliability

System Level Effects on Solder Joint Reliability System Level Effects on Solder Joint Reliability Maxim Serebreni 2004 2010 Outline Thermo-mechanical Fatigue of solder interconnects Shear and tensile effects on Solder Fatigue Effect of Glass Style on

More information

Atmosphere Effect on Soldering of Flip Chip Assemblies. C. C. Dong Air Products and Chemicals, Inc. U.S.A.

Atmosphere Effect on Soldering of Flip Chip Assemblies. C. C. Dong Air Products and Chemicals, Inc. U.S.A. Atmosphere Effect on Soldering of Flip Chip Assemblies C. C. Dong Air Products and Chemicals, Inc. U.S.A. Atmosphere Effect on Soldering of Flip Chip Assemblies Abstract An experimental study was conducted

More information

Faculty of Mechanical and Manufacturing Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia

Faculty of Mechanical and Manufacturing Engineering, Universiti Tun Hussein Onn Malaysia, Johor, Malaysia ', Advanced Materials Research Vol. 845 (2014) pp 76-80 Online available since 2013/Dec/04 at www.scient$c net O (2014) Trans Tech Publications, Switzerland doi: l0.4028/www.scient~~$c. net/amr. 845.76

More information

Loading Mixity on the Interfacial Failure Mode in Lead-Free Solder Joint

Loading Mixity on the Interfacial Failure Mode in Lead-Free Solder Joint Journal of ASTM International, Vol. 7, No. 5 Paper ID JAI103021 Available online at www.astm.org Feng Gao, 1 Jianping Jing, 2 Frank Z. Liang, 3 Richard L. Williams, 3 and Jianmin Qu 4 Loading Mixity on

More information

Non-Conductive Adhesive (NCA) Trapping Study in Chip on Glass Joints Fabricated Using Sn Bumps and NCA

Non-Conductive Adhesive (NCA) Trapping Study in Chip on Glass Joints Fabricated Using Sn Bumps and NCA Materials Transactions, Vol. 49, No. 9 (2008) pp. 2100 to 2106 #2008 The Japan Institute of Metals Non-Conductive Adhesive (NCA) Trapping Study in Chip on Glass Joints Fabricated Using Sn Bumps and NCA

More information

14. Designing with FineLine BGA Packages

14. Designing with FineLine BGA Packages 14. Designing with FineLine BGA Packages S51014-1.0 Chapter 14, Designing with FineLine BGA Packages, replaces AN 114: Designing with FineLine BGA Packages. Introduction As programmable logic devices (PLDs)

More information

The Morphology Evolution and Voiding of Solder Joints on QFN Central Pads with a Ni/Au Finish

The Morphology Evolution and Voiding of Solder Joints on QFN Central Pads with a Ni/Au Finish The Morphology Evolution and Voiding of Solder Joints on QFN Central Pads with a Ni/Au Finish Julie Silk 1, Jianbiao Pan 2, Mike Powers 1 1 Agilent Technologies, 1400 Fountaingrove Parkway, Santa Rosa,

More information

Mater. Res. Soc. Symp. Proc. Vol Materials Research Society

Mater. Res. Soc. Symp. Proc. Vol Materials Research Society Mater. Res. Soc. Symp. Proc. Vol. 993 2007 Materials Research Society 0993-E03-01 Dissolution Kinetics of Nickel in Lead-Free Sn-Bi-In-Zn-Sb Soldering Alloys Katayun Barmak 1, David C. Berry 1, Vira G.

More information

Ag Plating and Its Impact on Void-Free Ag/Sn Bumping

Ag Plating and Its Impact on Void-Free Ag/Sn Bumping Ag Plating and Its Impact on Void-Free Ag/Sn Bumping Hirokazu Ezawa, Kazuhito Higuchi, Msaharu Seto, Takashi Togasaki, Sachiko Takeda* and Rei Kiumi* Toshiba Corporation Semiconductor Company Advanced

More information

Arch. Metall. Mater. 62 (2017), 2B,

Arch. Metall. Mater. 62 (2017), 2B, Arch. Metall. Mater. 62 (2017), 2B, 1225-1229 DOI: 10.1515/amm-2017-0182 S.S. KIM*, I. SON* #, K.T. KIM** EFFECT OF ELECTROLESS Ni P PLATING ON THE BONDING STRENGTH OF Bi Te-BASED THERMOELECTRIC MODULES

More information

Reliability And Processability Of Sn/Ag/Cu Solder Bumped Flip Chip Components On Organic High Density Substrates

Reliability And Processability Of Sn/Ag/Cu Solder Bumped Flip Chip Components On Organic High Density Substrates Reliability And Processability Of Sn/Ag/Cu Solder Bumped Flip Chip Components On Organic High Density Substrates Minja Penttilä, Kauppi Kujala Nokia Mobile Phones, Research and Technology Access Itamerenkatu

More information

Arch. Metall. Mater. 62 (2017), 2B,

Arch. Metall. Mater. 62 (2017), 2B, Arch. Metall. Mater. 62 (2017), 2B, 1027-1031 DOI: 10.1515/amm-2017-0147 D. KONCZ-HORVÁTH*#, G. GERGELY*, Z. GÁCSI* WHISKER-LIKE FORMATIONS IN Sn-3.0Ag-Pb ALLOYS In this study, different types of whisker-like

More information

LEAD FREE ALLOY DEVELOPMENT

LEAD FREE ALLOY DEVELOPMENT LEAD FREE ALLOY DEVELOPMENT Karl F. Seelig, VP of Technology AIM Cranston, RI. USA. kseelig@aimsolder.com Abstract. When lead-free solders were first introduced to the electronics industry in the early

More information

Fast Spreading of Liquid SnPb Solder on Gold-coated Copper Wheel Pattern

Fast Spreading of Liquid SnPb Solder on Gold-coated Copper Wheel Pattern J. Mater. Sci. Technol., 2010, 26(12), 1143-1147. Fast Spreading of Liquid SnPb Solder on Gold-coated Copper Wheel Pattern Wei Liu 1), Lei Zhang 1), K.J. Hsia 2) and J.K. Shang 1,3) 1) Shenyang National

More information

Low Cycle Fatigue Testing of Ball Grid Array Solder Joints under Mixed-Mode Loading Conditions

Low Cycle Fatigue Testing of Ball Grid Array Solder Joints under Mixed-Mode Loading Conditions Tae-Sang Park Mechatronics & Manufacturing Technology Center, Corporate Technology Operations, Samsung Electronics Co., LTD, 416, Maetan-3Dong, Yeongtong-Gu, Suwon-City, Gyeonggi-Do, 443-742, Korea e-mail:

More information

Critical Use Conditions and their Effect on the Reliability of Soldered Interconnects in Under the Hood Application

Critical Use Conditions and their Effect on the Reliability of Soldered Interconnects in Under the Hood Application 1 Fraunhofer ISIT, Itzehoe Critical Use Conditions and their Effect on the Reliability of Soldered Interconnects in Under the Hood Application Dr. T. Ahrens and Mr. F. W. Wulff, CEM GmbH, Mr. S. Wiese,

More information

Hybrid atomization method suitable for production of fine spherical lead-free solder powder

Hybrid atomization method suitable for production of fine spherical lead-free solder powder NUKLEONIKA 2006;51(Supplement 1):S83 S88 PROCEEDINGS Hybrid atomization method suitable for production of fine spherical lead-free solder powder Kazumi Minagawa, Hideki Kakisawa, Susumu Takamori, Yoshiaki

More information

THIN IMMERSION TIN USING ORGANIC METALS

THIN IMMERSION TIN USING ORGANIC METALS THIN IMMERSION TIN USING ORGANIC METALS Jim Kenny, Nils Arendt, Bernhard Wessling, and Karl Wengenroth Enthone Inc., A Business of Cookson Electronics West Haven, CT, USA ABSTRACT With the international

More information

Lead-Free Inspection Methods. Tom Perrett Marketing Manager Soldertec & Keith Bryant European Sales Manager Dage Precision Industries

Lead-Free Inspection Methods. Tom Perrett Marketing Manager Soldertec & Keith Bryant European Sales Manager Dage Precision Industries Lead-Free Inspection Methods Tom Perrett Marketing Manager Soldertec & Keith Bryant European Sales Manager Dage Precision Industries Overview Look at the solder!! ICP 610D Lead detection fluids Microsectioning

More information

Electromigration induced Kirkendall void growth in Sn-3.5Ag/Cu solder joints

Electromigration induced Kirkendall void growth in Sn-3.5Ag/Cu solder joints Electromigration induced Kirkendall void growth in Sn-3.5Ag/Cu solder joints Yong Jung and Jin Yu Citation: Journal of Applied Physics 115, 083708 (2014); doi: 10.1063/1.4867115 View online: http://dx.doi.org/10.1063/1.4867115

More information

3D-WLCSP Package Technology: Processing and Reliability Characterization

3D-WLCSP Package Technology: Processing and Reliability Characterization 3D-WLCSP Package Technology: Processing and Reliability Characterization, Paul N. Houston, Brian Lewis, Fei Xie, Ph.D., Zhaozhi Li, Ph.D.* ENGENT Inc. * Auburn University ENGENT, Inc. 2012 1 Outline Packaging

More information

Effects of Design, Structure and Material on Thermal-Mechanical Reliability of Large Array Wafer Level Packages

Effects of Design, Structure and Material on Thermal-Mechanical Reliability of Large Array Wafer Level Packages Effects of Design, Structure and Material on Thermal-Mechanical Reliability of Large Array Wafer Level Packages Bhavesh Varia 1, Xuejun Fan 1, 2, Qiang Han 2 1 Department of Mechanical Engineering Lamar

More information

Interconnection Reliability of HDI Printed Wiring Boards

Interconnection Reliability of HDI Printed Wiring Boards Presented in the ECWC 10 Conference at IPC Printed Circuits Expo, SMEMA Council APEX and Designers Summit 05 Interconnection Reliability of HDI Printed Wiring Boards Tatsuo Suzuki Nec Toppan Circuit Solutions,

More information

Welding Processes. Consumable Electrode. Non-Consumable Electrode. High Energy Beam. Fusion Welding Processes. SMAW Shielded Metal Arc Welding

Welding Processes. Consumable Electrode. Non-Consumable Electrode. High Energy Beam. Fusion Welding Processes. SMAW Shielded Metal Arc Welding Fusion Consumable Electrode SMAW Shielded Metal Arc Welding GMAW Gas Metal Arc Welding SAW Submerged Arc Welding Non-Consumable Electrode GTAW Gas Tungsten Arc Welding PAW Plasma Arc Welding High Energy

More information

Visit

Visit Practical Applications for Nano- Electronics by Vimal Gopee E-mail: Vimal.gopee@npl.co.uk 10/10/12 Your Delegate Webinar Control Panel Open and close your panel Full screen view Raise hand for Q&A at the

More information

YOUR Strategic TESTING ENGINEERING CONCEPT SMT FLIP CHIP PRODUCTION OPTO PACKAGING PROCESS DEVELOPMENT CHIP ON BOARD SUPPLY CHAIN MANAGEMENT

YOUR Strategic TESTING ENGINEERING CONCEPT SMT FLIP CHIP PRODUCTION OPTO PACKAGING PROCESS DEVELOPMENT CHIP ON BOARD SUPPLY CHAIN MANAGEMENT YOUR Strategic TECHNOLOGY PARTNER Wafer Back-End OPTO PACKAGING PROCESS DEVELOPMENT CONCEPT FLIP CHIP PROTOTYping ENGINEERING TESTING SMT PRODUCTION CHIP ON BOARD SUPPLY CHAIN MANAGEMENT Next Level 0f

More information

Failure Modes in Wire bonded and Flip Chip Packages

Failure Modes in Wire bonded and Flip Chip Packages Failure Modes in Wire bonded and Flip Chip Packages Mumtaz Y. Bora Peregrine Semiconductor San Diego, Ca. 92121 mbora@psemi.com Abstract The growth of portable and wireless products is driving the miniaturization

More information

Impacts of the bulk Phosphorous content of electroless Nickel layers to Solder Joint Integrity

Impacts of the bulk Phosphorous content of electroless Nickel layers to Solder Joint Integrity Impacts of the bulk Phosphorous content of electroless Nickel layers to Solder Joint Integrity Sven Lamprecht, Kuldip Johal, Dr. H.-J. Schreier, Hugh Roberts Atotech Deutschland GmbH Atotech USA, Berlin

More information

Silicon Wafer Processing PAKAGING AND TEST

Silicon Wafer Processing PAKAGING AND TEST Silicon Wafer Processing PAKAGING AND TEST Parametrical test using test structures regularly distributed in the wafer Wafer die test marking defective dies dies separation die fixing (not marked as defective)

More information

Copyright 2008 Year IEEE. Reprinted from IEEE ECTC May 2008, Florida USA.. This material is posted here with permission of the IEEE.

Copyright 2008 Year IEEE. Reprinted from IEEE ECTC May 2008, Florida USA.. This material is posted here with permission of the IEEE. Copyright 2008 Year IEEE. Reprinted from IEEE ECTC 2008. 27-30 May 2008, Florida USA.. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE

More information

Impact of Intermetallic Growth on the Mechanical Strength of Pb-Free BGA Assemblies

Impact of Intermetallic Growth on the Mechanical Strength of Pb-Free BGA Assemblies Impact of Intermetallic Growth on the Mechanical Strength of Pb-Free BGA Assemblies Patrick Roubaud, Grace Ng, Greg Henshall Hewlett Packard Ronald Bulwith, Robert Herber - Alpha Metals Swaminath Prasad,

More information

Effect of Magnesium Addition on Microstructure and Mechanical Properties of Lead-Free Zinc-Silver Solder Alloys

Effect of Magnesium Addition on Microstructure and Mechanical Properties of Lead-Free Zinc-Silver Solder Alloys Effect of Magnesium Addition on Microstructure and Mechanical Properties of Lead-Free Zinc-Silver Solder Alloys Md. Anisul Islam * and Ahmed Sharif Department of Materials and Metallurgical Engineering,

More information

IBM Research Report. Yoon-Chul Sohn, Jin Yu KAIST 373-1, Guseong-Dong, Yuseong-Gu Daejeon Korea

IBM Research Report. Yoon-Chul Sohn, Jin Yu KAIST 373-1, Guseong-Dong, Yuseong-Gu Daejeon Korea RC23513 (W0502-039) February 4, 2005 Materials Science IBM Research Report Effect of Intermetallics Spalling on the Mechanical Behavior of Electroless Ni(P)/Pb-free Solder Interconnection Yoon-Chul Sohn,

More information

A LOW TEMPERATURE CO-FIRED

A LOW TEMPERATURE CO-FIRED Active and Passive Elec. Comp., 1998, Vol. 20, pp. 215-224 Reprints available directly from the publisher Photocopying permitted by license only (C) 1998 OPA (Overseas Publishers Association) Amsterdam

More information

Ultralow Residue Semiconductor Grade Fluxes for Copper Pillar Flip-Chip

Ultralow Residue Semiconductor Grade Fluxes for Copper Pillar Flip-Chip Ultralow Residue Semiconductor Grade Fluxes for Copper Pillar Flip-Chip SzePei Lim (Presenter), Jason Chou, Maria Durham, and Dr. Andy Mackie Indium Corporation 1 Outline of Presentation Roadmaps and challenges

More information

Field Condition Reliability Assessment for SnPb and SnAgCu Solder Joints in Power Cycling Including Mini Cycles

Field Condition Reliability Assessment for SnPb and SnAgCu Solder Joints in Power Cycling Including Mini Cycles Field Condition Reliability Assessment for SnPb and SnAgCu Solder Joints in Power Cycling Including Mini Cycles Min Pei 1, Xuejun Fan 2 and Pardeep K. Bhatti 2 1 Georgia Tech, 801 Ferst Dr. NW, Atlanta,

More information

COMPUTER SIMULATION AND EXPERIMENTAL RESEARCH OF CAST PISTON POROSITY

COMPUTER SIMULATION AND EXPERIMENTAL RESEARCH OF CAST PISTON POROSITY Tome V (year 2007), Fascicole 2, (ISSN 1584 2665) COMPUTER SIMULATION AND EXPERIMENTAL RESEARCH OF CAST PISTON POROSITY D. KAKAS, L. KOVACEVIC, P. TEREK UNIVERSITY OF NOVI SAD, FACULTY OF TECHNICAL SCIENCES,

More information

Y. Zhou, X. Zhou, Q. Teng, Q.S. Wei, Y.S. Shi

Y. Zhou, X. Zhou, Q. Teng, Q.S. Wei, Y.S. Shi Investigation on the scan strategy and property of 316L stainless steel-inconel 718 functionally graded materials fabricated by selective laser melting Y. Zhou, X. Zhou, Q. Teng, Q.S. Wei, Y.S. Shi State

More information

UBM (Under Bump Metallization) Study for Pb-Free Electroplating Bumping : Interface Reaction and Electromigration

UBM (Under Bump Metallization) Study for Pb-Free Electroplating Bumping : Interface Reaction and Electromigration UBM (Under Bump Metallization) Study for Pb-Free Electroplating Bumping : Interface Reaction and Electromigration Se-Young Jang+, Juergen Wolf*, Woon-Seong Kwon, Kyung-Wook Paik Dept. Materials Science

More information

Fluxless soldering using Electron Attachment (EA) Technology

Fluxless soldering using Electron Attachment (EA) Technology Fluxless soldering using Electron Attachment (EA) Technology Proprietary, patented innovation for wafer level packaging applications including wafer bump and copper pillar reflow. Air Products has partnered

More information

Automotive Electronic Material Challenges. Anitha Sinkfield, Delphi

Automotive Electronic Material Challenges. Anitha Sinkfield, Delphi Automotive Electronic Material Challenges Anitha Sinkfield, Delphi Automotive Electronic Material Challenges Project Update About inemi Project Participants Problem Statement Project Details Summary and

More information

Challenges and Future Directions of Laser Fuse Processing in Memory Repair

Challenges and Future Directions of Laser Fuse Processing in Memory Repair Challenges and Future Directions of Laser Fuse Processing in Memory Repair Bo Gu, * T. Coughlin, B. Maxwell, J. Griffiths, J. Lee, J. Cordingley, S. Johnson, E. Karagiannis, J. Ehrmann GSI Lumonics, Inc.

More information

Dynamic strength of anisotropic conductive joints in flip chip on glass and flip chip on flex packages

Dynamic strength of anisotropic conductive joints in flip chip on glass and flip chip on flex packages Microelectronics Reliability 44 (2004) 295 302 www.elsevier.com/locate/microrel Dynamic strength of anisotropic conductive joints in flip chip on glass and flip chip on flex packages Y.P. Wu a,b, M.O.

More information

Intermetallic Phase Growth and Reliability of Sn-Ag-Soldered Solar Cell Joints

Intermetallic Phase Growth and Reliability of Sn-Ag-Soldered Solar Cell Joints Vailable online at www.sciencedirect.com Energy Procedia 27 (2012 ) 664 669 SiliconPV 2012, 03-05 April 2012, Leuven, Belgium Intermetallic Phase Growth and Reliability of Sn-Ag-Soldered Solar Cell Joints

More information