Comparison of Different Sputter Processes for ITO: Planar DC versus Planar AC
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1 Comparison of Different Sputter Processes for ITO: Planar DC versus Planar AC P. Sauer,H.-G.Lotz, A. Hellmich R. Kukla, J. Schröder Applied Films GmbH &,Co. KG, Alzenau, Germany
2 Outline n n n n n n Current ITO layers on glass and web Motivation for MF coating Influence of magnetic field Processing Equipment Results Conclusions
3 Current ITO layers on glass and web ITO on glass at higher substrate temperatures > C Low specific resistivity < 200 micro * Ohm * cm Thickness of 20 Ohm layer : 100 nm. J ITO on web at low substrate temperatures < C High specific resistivity ~ 500 micro * Ohm * cm Thickness of 20 Ohm layer : 250 nm. è high costs, poor optical properties (absorption, light scattering) L
4 Sheet Resistance of ITO layers for different Applications Fraunhofer Institute FeP, Dresden
5 Layer thickness for different specific Resistivities of ITO ITO Layer Thickness [nm] Mikro Ohm * cm 500 Mikro Ohm * cm 400 Mikro Ohm * cm 300 Mikro Ohm * cm 200 Mikro Ohm * cm Sheet Resistance [Ohm/Square]
6 ITO Transmission for different Layer Thickness Values 300 nm ITO 100 nm ITO
7 Motivation for Mid Frequency Sputtering of ITO Higher ion energy è Higher Surface Mobility? è Effect similar to higher Substrate Temp.? è Lower Specific Resistivity? Reduced arcing è Less nodule growth? è Longer target utilization without cleaning? è Lower Specific Resistivity?
8 Smart Web Sputter Coating Machine
9 Sputter Deposition of ITO in MF-Mode MF/AC Power Supply Matching Box Process Conditions: Gas Flow P(Cathode) 1-3 kw Ar flow rate sccm Ar/O 2 flow rate 0-90 sccm Total Target Surface 1400 cm 2 Effective Power Density 0,7-2,1 W/cm 2 Rate (1,2,3 kw) 10, 20, 30 nm*m/min Cathode Substrate (PET)
10 Sputter Deposition of ITO in DC-Mode DC Power Supply left right Process Conditions: Gas Flow P(Cathode on left side) 1,368 kw P(Cathode on right side) 1,290 kw Ar flow rate 255 sccm Ar/O 2 flow rate sccm Total Target Surface 700 cm 2 Effective Power Density Rate of Cathode on left side 1,95 W/cm 2 16 nm*m/min Cathodes Substrate (PET) Rate of Cathode on right side 16,6 nm*m/min
11 Specific Resistivity for different power levels in MF-Mode on Glass Specific Resistivity [Mikro Ohm * cm] P = 1 kw P = 2 kw P = 3 kw Ar/O2-Flow [sccm/min]
12 Specific Resistivity on Glass and PET (MF-Mode, 2 kw) Specific Resistivity [Mikro Ohm * cm] PET Glass Glas Folie Ar/O2 - Flow [sccm/min]
13 Specific Resistivity on PET (MF-Mode, 2 kw) for different layer thickness values 750 Specific Resistivity [Mikro Ohm * cm] ITO Layer Thickness [nm]
14 Specific Resistivity and Roughness of MF sputtered ITO layers on PET (ITO Thickness nm, 1.0 kw) Specific Resistivity [MicroOhm * cm] Roughness Rmax [nm] ITO Layer Thickness [nm]
15 Specific Resistivity and Absorption of MF sputtered ITO layers on PET (Thickness 40 nm, 1.0 kw, A=1-R-T) 1400, ,0 14 Specif. Resistivity [mikro Ohm*cm] 1000,0 800,0 600,0 400,0 200,0 Specific Resistivity Absorption (incl. PET) Absorption (400 nm) in % 0,0 0 0,0 10,0 20,0 30,0 40,0 50,0 60,0 70,0 Ar/O2 Flow [sccm/min]
16 Specific Resistivity and Absorption of DC sputtered ITO layers (Thickness nm, 1,37 kw, A=1-R-T) 1400,0 16 spec. Resistivity (MikroOhm*cm) 1200,0 1000,0 800,0 600,0 400,0 200,0 Specific Resistivity Absorption (incl. PET) Absorption (400 nm) [%] 0, Ar/O 2 -Flow [sccm/min] 0
17 Specific Resistivity of MF-sputtered ITO layers on Glass and PET substrates (P=1.3 kw). Rate of first Cathode: 16 nm * m / min; Rate of second Cathode = 16,6 nm * m / min spec. Resistivity (MikroOhm*cm) Left cathode 22 sccm/min Right cathode Glass LS, Rate PET LS Glass RS PET RS Ar/O2-Flow [sccm/min]
18 Influence of magnetic field on Target utilization and Specific Resistance ka Magnetic field strength N/S/N magnetic field HLK optimised mag. field ToraMag Targetwidth / mm
19 Erosion profiles using different magnetic fields Targetthickness / mm Targetwidth / mm Cathode utilization HLK 22 % ToraMag 40 %
20 Specific Resistivity on PET for different magnetic field strength Spec. Resistance ITO Specific Resistance HLK ToraMag ITO Layerthickness
21 Conclusions : Similar layer properties were obtained with MF and DC sputtering. Operating point for sputter process must be optimized for both cathodes separately. No beneficial effect of MF sputtering compared to DC. Higher Target utilization using adapted mag. Fields for planar cathodes. Save Money :Use optimized mag. fields Don t change from DC to MF sputtering of ITO
22 Thank you
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