Macroscopic Arrays of Block Copolymers with Areal Densities of 10 Terbit/inch 2 and Beyond

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Macroscopic Arrays of Block Copolymers with Areal Densities of 10 Terbit/inch 2 and Beyond Soojin Park*, Dong Hyun Lee, Bokyung Kim, Sung Woo Hong Department of Polymer Science and Engineering,

1 Macroscopic Arrays of Block Copolymers with Areal Densities of 10 Terbit/inch 2 and Beyond Soojin Park*, Dong Hyun Lee, Bokyung Kim, Sung Woo Hong Department of Polymer Science and Engineering, University of Massachusetts, Amherst, MA *Ulsan National Institue of Science and Technology Shuaigang Xiao Seagate Technologies Ting Xu Department of Materials Science and Engineering & Department of Chemistry, University of California at Berkeley, Berkeley, CA Supported by: DOE BES, NSF MRSEC & CHM, Seagate Technologies

6 Russell, T.P., Physica B, 1995, 213&214, 22.

7 Balanced Interfacial Interactions Thermal Annealing UV Exposed

8 Application of Self-Assembled Block Copolymers Nanocrystal Flash Memory Semiconductor Capacitor Formation Applied Physics Letters (2001) Magnetic Data Storage Adv. Mater (2001) IEEE International Electron Devices 16 (2007) Nanoporous Membranes Magnetic Patterned Media Appl. Phys. Lett (2005) Low K Adv. Mater (2006) IEEE Trans Magn (2002)

9 PS-b-PEO (19.0k-6.3k) As-spun film (~120 nm) Solvent annealed film

10 Grazing Incidence X-ray Scattering I ( q) ( ) E( ) E( ) Fs ( q) Ss( q) Fc ( q ) 2

11 GISAXS Patterns of PS-b-P4VP Thin Films As-spun 30 mins 1 hr hrs 3 hrs 4 hrs

12 Schematic diagram of solvent evaporation Solvent Evaporation f s Ordering Front r substrate DISORDERED ORDERED

13 Schematic Diagram of Template Preparation Polystyrene-b-poly(4-vinylpyridine) (PS-b-P4VP) Spin coating Solvent annealing in Tol/THF Solvent mixture For 3-6 hrs in solvent vapor SFM Images As-spun 29.6 ± 5.9 nm Solvent annealing 25.0 ± 1.7 nm Scale bars: 200nm S. Park et al. ACS Nano 2008, 2, 766

14 Reversible Reconstruction SFM image Solvent annealed film Reconstructed Film Recovery of initial morphology Solvent annealing in Toluene/THF Immersion in EtOH for 20 min Thermal annealing at 115 o C for 10 min Scale Bars: 200 nm (PS-b-P4VP: 47.6k-20.9k)

Guided BCP Array Highly Ordered BCP Films Solvent

16 Macroscopic Arrays of BCP Microdomains Mis-cut Single Crystal Thermal Annealing Sawtooth Pattern Guided BCP Array Highly Ordered BCP Films Solvent Annealing Spin-coated BCP Film Spin-Coated BCP Film

17 Highly Ordered PS-b-PEO Microdomains PS-b-PEO (20k-6.5k) Phase mode PS-b-PEO (19k-6.4k) Phase mode d-spacing: 30.2 nm Feature size: ~13 nm 0.74 Terabit/inch 2 (2 µm x 2 µm) (2 µm x 2 µm) d-spcing: 24.4 nm Feature size: 9.5 nm 1.21 Terabit/inch 2

18 Highly Ordered PS-b-PEO Microdomains PS-b-PEO (16k-5k) PS-b-PEO (5k-2k) (Au complex) (1.5 µm x 1.5 µm) (1 µm x 1 µm) d-spacing: ~18.1 nm Feature size: ~ 7.8 nm 2.42 Terabit/inch 2 d-spacing: 6.93 nm Feature size: ~ 3.1 nm 10.5 terabit/inch 2

19 Orientational Ordering

20 Translational Ordering

21 Two-Dimensional Hexagonal Lattice (11) plane (10) plane Solid and dotted lines represent the symmetry planes perpendicular to the planes of paper Hexagonal lattice: (10), (11), (20), (21), (30), (22), (31), etc. Diffraction peaks: 1, 3, 4, 7, 9, 12, etc.

Log (I) (a.u.) GISAXS Patterns of Highly Ordered BCPs Log (I) (a.u.) 2.

0 3 4 7 f (deg.) 1.5 1.0 0.2 0.4 0.6 0.8 q xy (nm -1 ) f (deg.) 1.5 1.0 0.2 0.4 0.6 0.8 q xy (nm -1 ) 0.

22 Log (I) (a.u.) GISAXS Patterns of Highly Ordered BCPs Log (I) (a.u.) Sample stage: 0 o Sample stage: 30 o f (deg.) q xy (nm -1 ) f (deg.) q xy (nm -1 ) f (deg.) f (deg.)

23 Nanoporous Materials from PS-b-PLA HO Cl + CuBr, PMDETA 110 o C, 12 h HO Cl n O O O O Sn(Oct) 2, Toluene 110 o C, 3 h HO m O O O O Cl n Biologically and Chemically Degradable Polymer

24 Cl 110 o C, 12 h Nanoporous Materials from PS-b-PLA O O O O Sn(Oct) 2, Toluene 110 o C, 3 h HO m O O O O Cl n 0.5 Hexagonal Packing on Flat Substrate 0.0 f + i (deg.) -0.5 q q q 3q 500 nm 2q 2q -1.5

q z (nm -1 ) f (deg.) 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.5 0.4 0.2 0.0-0.2-0.4-0.5-0.6 +60 o q z (nm -1 ) f (deg.) 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.5 0.4 0.2 0.0-0.2-0.4-0.5-0.6 +30 o Hx Packing of PS-b-PLA on Faceted Substrate d +0o > d +30o -1.

26 q z (nm -1 ) f (deg.) o q z (nm -1 ) f (deg.) o Hx Packing of PS-b-PLA on Faceted Substrate d +0o > d +30o f (deg.) q y (nm -1 ) 2 f (deg.) q y (nm -1 ) q z (nm -1 ) f (deg.) o q z (nm -1 ) f (deg.) o f (deg.) q y (nm -1 ) 2 f (deg.) q y (nm -1 )

27 BCP Ordering Relative to Substrate

28 Pattern Transfer Process

29 Topography Transfer PDMS FEP 200 nm PI PBT

30 BCP Ordering on Soft, Flexible Substrate Reconstructed Sapphire PBT Replica PS-b-PEO Annealed in o-xylene vapor 2 mm x 2 mm

31 Transmission SAXS PS-b-PEO on PBT Replica 1 hr 2 hr 3 hr

32 Imperfections: Parallel Alignment PS 20K -b-peo 6.5K Thin film 5 µm 5 µm

33 Parallel Alignment Perpendicular to Sawtooth Preliminary Results from Simulation J.Hu Yonsei, W.H.Jo, SNU 90 o no elastic penalty for gliding!!! (after removing major block)

34 Annihilation of Defects Thickness = 37 nm Thickness = 42 nm Height Height Trace of Annihilation 1 µm 1 µm 1 µm 1 µm The defects are effectively annihilated upon increasing the thickness!

35 Line Pattern with High Degree of Straightness Height Phase 2 µm 2 µm 2 µm 2 µm The defects are completely annihilated at the optimum thickness and annealing condition!

PERFECT or NOT? 0 o Only 3 sec, 32409 counts!

36 PERFECT or NOT? 0 o Only 3 sec, counts!!! 2 o 12 sec, counts 4 o 50 sec, There must be some defects by nature. However, the probability is less than 2%. The line pattern is highly aligned and oriented along one direction!

37 Solvent Annealing: on Hard Faceted Substrate Orientation Parameter (f) Normalized Intensity, I( ) Intensity at (1,0) Plane Rotation Angle, (rad.) cos 2 f I I 3 c s 2 cos sin d I sin d 2 cos sin d I 2 o 1 2 sin d f Orientation 1 Perfectly parallel 0 Random -0.5 Perfectly perpendicular

38 Transmission-SAXS Study: Pattern Transfer PBT Film Line Patterns on Polymeric Replica Pattern Transferring Solvent Annealing Polymeric Replica As-spun Film on Polymeric Replica

39 Transmission-SAXS Study: Pattern Transfer Peak Positions are same! The line pattern is highly aligned and oriented along one direction!

Vertically aligned Ni magnetic nanowires fabricated by diblock-copolymer-directed Al thin film anodization

Vertically aligned Ni magnetic nanowires fabricated by diblock-copolymer-directed Al thin film anodization Researcher: Kunbae (Kevin) Noh, Graduate Student, MAE Dept. and CMRR Collaborators: Leon Chen,