Welcome MNT Conference 1 Albuquerque, NM - May 2010
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1 Welcome MNT Conference 1 Albuquerque, NM - May 2010
2 Introduction to Design Outline What is MEMs Design General Considerations Application Packaging Process Flow What s available Sandia SUMMiT Overview Review of surface micromachining process Draw a Cantileverl
3 What is MEMs Design? Develop a plan What will be the function? How will it be packaged? What will the environment be? Where will the part be built? What are the final specifications? The path from Concept to Reality
4 General Considerations - Applications BIOMEMs - BIO-Compatible Materials? Fluidics? Surface and/or Bulk processing? Both? Shock conditions? Vacuum? Or Atmosphere? Humidity? (Stiction) Use Few, Many, Millions, Billions Reliability Questions What materials are best for the given application? How and when will the parts be released?
5 Packaging Input Fluids (Glass, Poly tubing?) Pressure (Open? Glass Tubes?) Electrical Signals (Leads) Optical signals (Fiber optic) Vibration, Shock? How Many of each required? Are there standard Packages Available Output Fluids Electrical Signals Optical Signals Must Speak with the Packaging Folks FIRST!
6 Process Flow Where are you going to build this? Is there already a standard process Flow? Much faster and cheaper to use standardized flow Process is well defined and understood Material Properties well known Require new steps in the flow? $$$$$ in development and capital Cost
7 Before Actually Building Prototype Model Components Will the moving part move? Where are the weak points? Some Tools to Model FEA Finite Element Analysis Mechanical Electrical 3d Printers Takes CAD Like output and makes the part
8 SUMMiT Design Process Flow Initial Design AutoCAD Layout Visualization 2D Process Visualizer Design Validation Analysis Verification 3D Visualizer Design Rule checking Fabrication of Final Product
9 Sandia s Five-level Surface Micromachining Technology Enables Useful Complex Systems 2*-level 3-level 4-level 5-level Electrostatic Micromotor Motor Gear Bearing Motor Bearing Gear Drive Linkages Motor Bearing Gear Drive Linkages Moveable Plate Motor Silicon Substrate Silicon Substrate Silicon Substrate Pin Joints Silicon Substrate Polysilicon Level #1 Sensors Polysilicon Level #1 Polysilicon Level #2 Advanced Sensors Simple Actuators Polysilicon Level #1 Polysilicon Level #2 Polysilicon Level #3 Advanced Actuators Polysilicon Level #1 Polysilicon Level #2 Polysilicon Level #3 Polysilicon Level #4 Complex Systems * First Poly Level is a ground plane
10 Major Processing Steps in Surface Micromachine and IC Manufacturing Crystal growth & wafering Wafer Repeat N times Thin film formation Impurity doping Photolithography Mask Set Etching What does the designer Control? Dicing & packaging
11 Materials for Surface Micromachining Material system requirements: Structural film must have desirable mechanical and electrical properties (low stress, conductivity, etc.) Sacrificial film must be stable under structural film deposition conditions and etch readily in an etchant that doesn t attack the mechanical film or the substrate Both films must be compatible with fabrication environment (generally silicon IC fab) SUMMiT Process: Structural - Polysilicon Sacrificial - Silicon Dioxide Electrical Isolation - Silicon Nitride Substrate - Single Crystal Silicon Substrate Structural thin film Sacrificial thin film
12 Surface Micromachining Key Concepts: Mechanical part is formed out of deposited thin films Need one structural and one sacrificial material Substrate Structural thin film Sacrificial thin film Pattern structural film Example: Wet etch sacrificial film Single-level mechanical structure with unpatterned sacrificial layer
13 Fabrication Processes: Photolithography Photolithography is used to pattern the thin-film layers IC industry uses positive photoresist becomes soluble in developer when exposed to UV light 5:1 pattern transfer Mask defines single die and pattern is stepped across wafer 0.3 µm resolution (there is a 0.5um Minimum Design Rule) 2820 µm x 6340 µm modules ~ 63 die per wafer
14 SUMMiT Sandia s Ultra-planar Multi-level MEMS Technology LPCVD 2.25 µm MMpoly4 PECVD LPCVD 2.0 µm SacOx4 (CMP) 2.25 µm MMpoly3 0.2 µm Dimple4 gap PECVD 0.3 µm SacOx2 2.0 µm SacOx3 (CMP) 1.5 µm MMpoly2 1.0 µm MMpoly1 0.4 µm Dimple3 gap 0.3 µm MMpoly0 2.0 µm SacOx µm Thermal SiO µm Silicon Nitride Substrate 6 inch wafer, <100>, n-type- 0.5 µm Dimple1 gap This process is fixed you can t change it (part of the design package as well)
15 Fabrication Review Start with single-crystal silicon wafer Deposit layer of sacrificial oxide
16 Fabrication Review (2) Mask Spin on light-sensitive photoresist Expose photoresist to light using oxide mask
17 Fabrication Review (3) Develop photoresist Etch away oxide not protected by photoresist
18 Fabrication Review (4) Strip off photoresist Deposit conformal layer of polysilicon
19 Fabrication Review (5) Mask Spin on light-sensitive photoresist Expose photoresist to light using polysilicon mask
20 Fabrication Review (6) Develop photoresist Etch away polysilicon not protected by photoresist
21 Fabrication Review (7) Strip off photoresist Etch away sacrificial oxide to complete
22 Final Product Low Angle View Thunderbird Actuator Flexible cantilever style arms Hole in oxide created anchor post
23 Simple Example? How many Masks? How Many Etches? Two, three Or four? How Many Depositions? So Will this move? What does it need?
24 Sandia MEMS Microengine Design Example Two orthogonal linear drives linked to a rotary gear output Rotating gear output allows unlimited movement Can run in excess of 350,000 rpm Lifetime of >7 (10 9 ) revolutions with millions of start/stop cycles demonstrated
25 Summary Designers are confronted with a plethora of Details Design Rules Process Limitations Packaging Concerns Interface issues Modeling Communication is the key!! Teamwork!
26 Let s draw a cantilever! LPCVD 2.25 µm MMpoly4 PECVD LPCVD 2.0 µm SacOx4 (CMP) 2.25 µm MMpoly3 0.2 µm Dimple4 gap PECVD 0.3 µm SacOx2 2.0 µm SacOx3 (CMP) 1.5 µm MMpoly2 1.0 µm MMpoly1 0.4 µm Dimple3 gap 0.3 µm MMpoly0 2.0 µm SacOx µm Thermal SiO µm Silicon Nitride Substrate 6 inch wafer, <100>, n-type- 0.5 µm Dimple1 gap This process is fixed you can t change it (part of the design package as well)
27 Get Started Open Sandia Design tools Open Drawing 1 Check out the tools Demo 3D Viewer Demo 2D Viewer Demo 3D Model MNT Conference 1 Albuquerque, NM - May 2010
28 Draw the beam first Why? Change layer to Poly2! (there s a reason for this just do it) Follow along to create a box Select rectangle and draw the LPCVD PECVD LPCVD PECVD 2.0 µm SacOx4 (CMP) 2.25 µm MMpoly µm MMpoly3 2.0 µm SacOx3 (CMP) 0.4 µm Dimple3 gap 1.5 µm MMpoly2 0.3 µm SacOx2 1.0 µm MMpoly1 2.0 µm SacOx1 0.3 µm MMpoly µm Thermal SiO 0.80 µm Silicon Nitride 2 Substrate 6 inch wafer, <100>, n-type- 0.2 µm Dimple4 gap 0.5 µm Dimple1 gap MNT Conference 1 Albuquerque, NM - May 2010
29 Need a Ground Plane Poly0 is a doped, structural material - selec LPCVD PECVD LPCVD PECVD 0.3 µm SacOx2 2.0 µm SacOx4 (CMP) 2.0 µm SacOx3 (CMP) 2.25 µm MMpoly µm MMpoly3 1.5 µm MMpoly2 1.0 µm MMpoly1 2.0 µm SacOx1 0.3 µm MMpoly µm Silicon Nitride 0.63 µm Thermal SiO 2 Substrate 6 inch wafer, <100>, n-type- 0.2 µm Dimple4 gap 0.4 µm Dimple3 gap 0.5 µm Dimple1 gap MNT Conference 1 Albuquerque, NM - May 2010
30 Ground and Actuator Elements Follow along to create a box Need a post Need an actuator pad MNT Conference 1 Albuquerque, NM - May 2010
31 Connect em! Anchor em SACOX 1 MNT Conference 1 Albuquerque, NM - May 2010
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