Raman and Er-doped Microlasers on a Si chip by Solgel Method
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1 Raman and Er-doped Microlasers on a Si chip by Solgel Method Lan Yang, Sean Spillane, Bumki Min, Tal Carmon and Kerry Vahala Department of Applied Physics California Institute of Technology 1
2 Outline Introduction Background and motivation Sol-gel technology and its application in photonics Microlasers on a Si chip pure silica solgel film filow threshold Raman Microlaser on a silicon wafer Doped solgel film fi Low threshold Erdoped Microlaser on a silicon wafer Summary 2
3 Motivation Combination of ultra-high-q and small mode volume gives large circulating powers fl Ultra-low threshold microlaser Chip-based microcavities are integrable with other optical or electronic components * Optical microcavities, Vahala, Nature, Vol.424, , 2003 "Ultra-high-Q toroid microcavity on a chip, Deniz Armani, Tobias Kippenberg,Sean Spillane and Kerry Vahala, Nature, Vol. 421, ,
4 Sol Gel Process organometallics +dopants in alcohol solvents H 2 O hydrolysis viscous gel spin/dip coat Advantages: Capable of designing the materials composition at molecular level Ability to shape materials in bulk, fiber, powder and thin film forms Versatile method to deposit thin films on both planar and nonplanar surfaces cost-effective and simple procedure 4
5 Application of solgel process in photonics Buried-channel erbium-doped waveguide amplifiers ** Sol-gel silica-on-silicon buried-channel EDWAs,Huang, W.; Syms, R.R.A., J. Lighwave Tech. 21, 1339 (2003) microlenses ** Simple reflow technique for fabrication of a microlens array in solgel glass, M He, X C Yuan, N Q Ngo, J Bu, and V Kudryashow, Opt. Lett. 28, 731 (2003) one-dimensional photonic crystal devices ** SiO 2 _TiO 2 omnidirectional reflector and microcavity resonator via the solgel method, Kevin M Chen, Andew W Sparks, Hsin-Chiao Luan, Desmond R Lim, Kazumi Wade, and Lionel C Kimerling, Appl. Phys. Lett. 75, 3805 (1999). external-cavity distributed Bragg reflector (DBR) laser ** Solgel grating waveguides for distributed bragg reflector lasers M A Fardad, H Luo, Y Beregovski, and M Fallahi, Opt. Lett. 24, 460 (1999). 5
6 Method 1: Raman microlaser on a silicon wafer by solgel process 6
7 Nonlinear optics in ultra-high Q silica microcavities Cavity Build-up factor: P P cav = Q=1 10 8, D=50µm, V m =650 µm 3 : fi P in =1 mw P cav ~110W, I cav ~2.5 GW/cm 2 in λq 2 2π nd Combination of ultra-high-q and small mode volume gives large circulating powers * Ultralow-threshold monolithic micro-raman laser, Sean M Spillane, Deniz Armani, Tobias. J. Kippenberg, and Kerry J. Vahala, CLEO/QELS, Baltimore, MD,
8 Nonlinear optics in ultra- high Q silica microcavities * Ultralow-threshold Raman microlaser using a spherical dielectric microcavity, Sean M Spillane, Tobias. J. Kippenberg, and Kerry J. Vahala, Nature, Vol.415, , 2002 * Ultralow-threshold monolithic micro- Raman laser, Sean M Spillane, Deniz Armani, Tobias. J. Kippenberg, and Kerry J. Vahala, CLEO/QELS, Baltimore, MD,
9 Process Flow of high Q microtoroid cavity Q~ Q~ Steps: 1. Solgel silica spun on Si chip 2. Circular pads created on the chip 3. Use XeF 2 etch to remove Si, (SiO 2 disks act as etch mask during the XeF 2 etching process) 4. Selectively heat and reflow the undercut SiO 2 disks using a CO 2 laser(10.6 microns) (SiO 2 has a strong optical absorption at 10.6 microns) Q~ "Ultra-high-Q toroid microcavity on a chip, Deniz Armani, Tobias Kippenberg, Sean Spillane, and Kerry Vahala, Nature, Vol. 421, 925,
10 Silica Reflow Process SiO2 has a strong optical absorption for CO2 laser Si pillar under the silica disk works as a thermal sink Typical laser intensity ~100 MW/m2 10
11 Comparison with thermal silica Thermal silica (2 micron) Solgel silica (1.5 micron) (a) Circular pads on silicon wafer (b) under-etched silica disk (c) Microtoroid after CO 2 laser reflow 11
12 Raman microlasers on a silicon wafer by solgel process Principal Diameter is 55-µm Pump power is 1.2 mw at 1451 nm Raman oscillation is at 1551 nm 12
13 Method 2: Er-doped microlaser on a silicon wafer by solgel process 13
14 Process Flow of ultra-low threshold Er-doped microtoroid cavity Q~ Steps: 1. Er-doped Solgel silica spun on Si chip 2. Circular pads created on the chip 3. Use XeF 2 etch to remove Si, (SiO 2 disks act as etch mask during the XeF 2 etching process) 4. Selectively heat and reflow the undercut SiO 2 disks using a CO 2 laser(10.6 microns) (SiO 2 has a strong optical absorption at 10.6 microns) "Ultra-high-Q toroid microcavity on a chip, Deniz Armani, Tobias Kippenberg, Sean Spillane, and Kerry Vahala, Nature, Vol. 421, 925,
15 Er-doped microlasers on a silicon wafer by solgel process Principal Diameter is 60-µm Green ring is due to upconverted photoluminescence from Er 3+ 15
16 Ultra-Low-Threshold Er-doped Microlasers Microtoroid Diameter~60 µm Sub-microWatt threshold: 750 nw 16
17 Summary Solgel technology is used to achieve microlasers on Si chip Raman microlasers Er 3+ -doped microlasers on a silicon wafer Sub-microWatt threshold Er 3+ -doped microlaser on Si chip is achieved 17
18 Presentation will be available at Thanks for your attention! 18
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