Solder alloy development for FOWLP Hikaru Nomura
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1 Solder alloy development for FOWLP Hikaru Nomura Researcher, Senju Metal Industry Co., Ltd., Solder technical center
2 Introduction
3 Wafer Level Packaging(WLP) and Fun-out WLP Wafer level packaging (WLP) is one of the key PKG technology to meet the demands for smaller and faster electronic components. Recently, FOWLP is the most interest technology. WLP Wafer Level CSP CTE Coefficient of Thermal Expansion Si Characteristics that require mainly Thermal Cycle Reliability Board Assembly Board Solder Difference of CTE is very large [Si/Board] Lead to larger strain
4 Accumulation rate.% Temperature [degc] Changes of thermal cycle reliability due to PKG design PBGA, CSP Image of Joint part +125C TCT Thermal Cycle Test -40 /+125 Si Board Assembly Mold resin Interposer Solder Board -40C Cycle WLP Wafer Level Packaging Si Image of Joint part SAC305 CSP SAC305 WLP Board Assembly Board Solder Change of TC reliability occurs in the same solder composition Mismatch of CTE [PKG/Solder/Board]
5 How to achieve high thermal cycle reliability
6 Higher strengthening approach Ag SAC305 SAC205 SAC105 Ag [Precipitation strengthening] Network of Ag3Sn prevent slip dislocation. Therefore, Solder has higher strength. SAC105 SAC305 Bi SAC308 SAC308+1Bi Bi [Solid solution strengthening] SAC308+2Bi SAC308+3Bi SAC308+4Bi Dislocation Dislocation stop Solid solution Higher strength should lead to higher thermal cycle reliability.
7 Precipitation strengthening; microstructure level Precipitation strengthening improvement dispersion hardening by intermetallic Compound (Cu 6 Sn 5 Ag 3 Sn, etc.) SAC alloy Sn Network of Ag3Sn Micron size Sn Sn Sn Sn Intermetallic compounds exists at grain boundary. Thermal cycle reliability SAC105 < SAC305 Network of Ag3Sn prevent slip dislocation. Therefore, Solder has higher strength.
8 Solid solution strengthening; atomic level Solid solution strengthening improvement strength improvement by solute Sn phase of etc. Sn Solid solution is distributed at an atomic size. Dislocation Dislocation Solid solution Atom of Soldid solute element prevent slip dislocation. It leads to prevent to deform solder bulk. Therefore, bulk metal is strengthen.
9 Solid solution strengthening Crystal lattice difference with different solid solute element Sn Bi In Sb Atomic radius [A ] Sn Bi Indium Higher strain in crystal lattice lower strain in crystal lattice Bi is exist in the Sn lattice with having higher strain. Therefore, Bi doping has more impact to become higher strength.
10 Bi effect on thermal cycle reliability
11 Temperature [degc] Thermal cycle test WLCSP S/F : Cu Size : 7 x 7mm Ball Size : 0.3mm dia. Pitch : 0.5mm SRO : 0.24mm (SMD) PCB Board : FR-4 Thickness : 0.6mmt S/F : Cu+ OSP SRO : 0.24mm (SMD) Assembly Paste: SAC305 Rosin type paste Stencil Thickness : 100um Chamber +125C 10min -40C TCT Test board Exp. -40 /+125 3min Cycle 10min Test condition Impact acceleration : -40 /+125 each10min Test number : N=15 The resistance of the Daisy Chain is measured. Initial resistance is 3-5Ω. When 15Ω is exceeded, it is judged as the breaks down.
12 Accumulation rate.% Thermal cycle reliability with Bi doping 99.9 TCT S/F : Cu Good Product Name SAC305 SAC405 SAC308+0Bi+Ni SAC308+1Bi+Ni SAC308+2Bi+Ni SAC308+3Bi+Ni SAC308+4Bi+Ni Cycle Number Higher Bi content leads to higher thermal cycle reliability.
13 RDL crack issue POR(SAC) alloy has strength poverty in thermal-cycle reliability. However High strengthen by doping element for improvement thermal-cycle reliability. It is concerned about stress concentration to RDL due to higher strength of solder alloy. (The tendency of which RDL is formed thin) RDL crack (after Thermal Cycling) Solder Cu Ni Si RDL RDL crack PKG Side It is important Bi doping effect to some properties, not only strength.
14 Elemental study of Bi doping
15 Grain size measurement Grain size is important factor for understand effect of solder microstructure. Image processor : Scandium Scandium measured area of grain. Average grain size was measured using area of grain. dia.[um] = (4*Area[um2] / π)^(1 / 2) Sample area class Above [um2] Under [um2] Leg 1 SAC405 2 SAC405Ge 3 SAC405+NiGe 4 SAC Bi 5 SAC405+1Bi 6 SAC405+1Bi+Ge 7 SAC405+1Bi+NiGe 8 SAC Bi 9 SAC405+2Bi 10 SAC405+3Bi
16 Grain size classes after Ball Attach Sample area class Above [um2] Under [um2] There are not big difference with Bi content after ball attach.
17 Grain size classes after assembly Sample area class Above [um2] Under [um2] There are not big difference with Bi content after assembly.
18 Grain size classes after TCT Sample area class Above [um2] Under [um2] There are not big difference with Bi content after TCT. Grain size should not cause RDL crack.
19 Vickers hardness test Mitutoyo Load force : 0.49N Loading time : 30s Vickers hardness become higher with increasing Bi content. It is same tendency with tensile strength.
20 Bi effect to tensile strength RT 125C Bi content impact tensile strength. Higher Bi content has higher tensile strength. Higher Bi content Cause RDL crack Bi content should be lower or less.
21 Considerable concept of Solder alloy design To inhibit RDL crack Bi content decrease. Purpose : We estimate tensile strength is one of the key factor for RDL crack. Therefore, we are considering Bi content should be lower or less to obtain lower strength. To obtain higher thermal cycle reliability Combination doping about Bi under and Indium under or Bi under and Sb. Purpose : When Bi content is lower or less, we are concerning that thermal cycle reliability become lower. Therefore, we are considering Indium and Sb doping as well as solid solute element. Microstructure control by Ni and X doping or other element. Purpose : If grain size and precipitation network is small after TCT, we think crack progression become slower. It leads higher thermal-cycle reliability.
22 Summary
23 Summary Bi has effect to improve thermal cycle reliability. Bi does not have effect grain size. It is concerned about RDL crack with higher Bi content due to higher strength. We need design solder alloy not only Bi doping but also microstructure control.
24 THANK YOU
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