NANO-FABRICATION FOR MESOSCOPIC PHYSICS
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1 NANO-FABRICATION FOR MESOSCOPIC PHYSICS Frédéric Pierre CNRS, Laboratory of Photonics and Nanostructures (LPN), Marcoussis, France ϕ Nano Team LPN
2 PLAN Overview Electron beam lithography Step by step realization of a 2DEG circuit: «Quantum dot spectrometer for the distribution function of electrons»
3 I. NANO-FABRICATION THE CLEAN ROOM ENVIRONMENT BASIC STRATEGY: TOP-DOWN vs BOTTOM-UP TYPCAL FABRICATION FLOWCHART OVERVIEW OF LITHOGRAPHY TECHNIQUES
4 LPN CLEAN ROOM 1100m 2 of clean room (700m 2 techno, 400m 2 epitaxy) Class 1000: less than 1000 particles 0.5µm/foot 3 (in cities /foot 3 ) How to keep a "clean room" clean? i) Limit dust sources ii) Positive pressure iii) Filtered laminar flow MAIN LPN CLEAN ROOM EQUIPMENTS Lithography (e-beam, UV and ion-beam) Dielectric deposition (e gun, sputtering, PECVD) Metallic deposition (Joules, e gun, sputtering) Etching (IBE, RIBE, RIE, wet etching) Characterization (SEM, AFM, optical, FTIR) Thermal treatments (wafer oxidation, eutectic Ω contacts) Back-end technologies (bonding, I-V on chip, lapping)
5 TWO MAIN APPROACHES TO NANO-FABRICATION TOP-DOWN VS BOTTOM-UP Nano-objects constructed from large entities Devices built from small components (atoms, nanotubes ) MZI (P. Roche, D. Mailly et al.) FUTURE: COMBINATION OF BOTH APPROACHES?
6 TYPICAL FABRICATION FLOWCHART substrate resist coating exposure development metal deposition etching electrolytic growth lift-off
7 LITHOGRAPHY CRUCIAL STEP THAT DETERMINES THE SMALLEST FEATURES g OPTICAL contact FOCUSED BEAM (e, ions ) e IMPRINT mold substrate 1. Heat + apply pressure (~50B) 2. Cooling projection 3. Remove mold 4. Etch residual resist
8 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm Labs and R&D Projection 50nm Industrial Economical but weak resolution Expensive but with constant progress EUV <50nm Industrial May be the next technique for 2010 Electron lithography 1nm Labs and R&D Fabrication of optical masks Technique without mask high resolution Ion lithography 3nm Labs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm Labs Economical, very slow Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
9 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm Labs and R&D Projection 50nm Industrial Economical but weak resolution Expensive but with constant progress EUV <50nm Industrial May be the next technique for 2010 Electron lithography Ion lithography Near field lithography Labs and R&D 1nmgap Fabrication b bof optical b e masks 3nm Light intensity on resist Atom 10nm Labs and R&D Labs Technique mask without mask high resist resolution substrate Better for etching than lithography (diagnostic) Ideal transfert Economical, very slow Real transfert Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
10 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm Labs and R&D Projection 50nm Industrial UV EUV <50nm Industrial Economical but weak resolution Expensive but with constant progress May be the next technique for 2010 Electron lithography 1nm Labs and R&D Fabrication of optical masks Technique without mask high resolution Ion lithography 3nm Labs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm Labs Economical, very slow Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
11 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm Labs and R&D Projection 50nm Industrial Economical but weak resolution Expensive but with constant progress EUV <50nm Industrial May be the next technique for 2010 Electron lithography 1nm Labs and R&D Fabrication of optical masks Technique without mask high resolution Ion lithography 3nm Labs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm Labs Economical, very slow Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
12 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm Labs and R&D Projection 50nm Industrial Economical but weak resolution Expensive but with constant progress EUV <50nm Industrial May be the next technique for 2010 Electron lithography 1nm Labs and R&D Fabrication of optical masks Technique without mask high resolution Ion lithography 3nm Labs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm Labs Economical, very slow Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
13 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Optical lithography Delft Univ. 1. Nano-FIB Technology Engineering Contact 0.25µm Labs and R&D Economical L2M-CNRS (FIB) Raith GmbH (Platform & software) Fug GmbH (Electronics) 2. Ion Source Proximity 2µm Labs and R&D Projection 50nm Industrial 3. Ion Optics Surrey Univ. L2M-CNRS CEA CEMES Delft Univ. L2M-CNRS Economical but weak resolution Expensive but with constant progress EUV <50nm Industrial Electron lithography 5. Final Exploitation Raith GmbH 1nm 150 mm Essen Univ. 4. Nano-FIB LPS Applications L2M-CNRS Labs and R&D Fabrication of optical masks May be the next technique for 2010 Technique without mask high resolution Ion lithography 3nm Labs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm Labs Economical, very slow Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
14 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm Labs and R&D Projection 50nm Industrial Economical but weak resolution ETH-ZurichExpensive but with constant progress EUV <50nm Industrial May be the next technique for 2010 Electron lithography 1nm Labs and R&D Fabrication of optical masks Technique without mask high resolution Ion lithography 3nm Labs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm Labs Economical, very slow Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
15 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution mold Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm substrate Labs and R&D 1. Heat + apply pressure (~50B) Projection 50nm Industrial Economical but weak resolution Expensive but with constant progress EUV <50nm Industrial 2. Cooling May be the next technique for 2010 Electron lithography 1nm Labs and R&D Fabrication of optical masks Technique without mask high resolution Ion lithography 3nm 3. Remove moldlabs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm 4. Etch residual resist Labs Nanoimprint 10nm Labs and industry? Economical, very slow Economical, fast Alignment problems mask 1 :1
16 LITHOGRAPHY OVERVIEW OF USUAL TECHNIQUES Technique Resolution Use Remarks Contact 0.25µm Labs and R&D Economical Optical lithography Proximity 2µm Labs and R&D Projection 50nm Industrial Economical but weak resolution Expensive but with constant progress EUV <50nm Industrial May be the next technique for 2010 Electron lithography 1nm Labs and R&D Fabrication of optical masks Technique without mask high resolution Ion lithography 3nm Labs and R&D Better for etching than lithography (diagnostic) Near field lithography Atom 10nm Labs Economical, very slow Nanoimprint 10nm Labs and industry? Economical, fast Alignment problems mask 1 :1
17 II. ELECTRON BEAM LITHOGRAPHY A TECHNIQUE USED IN THE FABRICATION OF MOST MESOSCOPIC DEVICES
18 ELECTRON BEAM LITHOGRAPHY e Leica EBPG5000+ Electron beam spot size ~1nm Very small wavelength: no diffraction limitation Direct writing: maskless Sequential writing: small throughput Resolution: depends on resist, down to spot size ~1nm
19 ELECTRON-RESIST INTERACTION organic resist (PMMA: polymethyl-meta-acrylate) PMMA m m m m m m m m m m m m m m m m non-soluble soluble Typical energy for breaking a bond: 10eV Typical energy of e-beam: several 10keV ( aberration problems at low energy)
20 ENERGY DEPOSITION SIMULATIONS e e DOUBLE GAUSSIAN MODEL 2 2 E( r) = a exp r 2 + b exp r 2 β β F R E β F β R r Forward scattering spreading of the beam: loss of resolution Substrate backscattering energy far from impact: proximity effects Tension [kv] β F [µm] β R [µm] nm resist on Si substrate
21 PROXIMITY EFFECTS Real dose depends on pattern intra proximity Real dose modified by surrounding of pattern D=E(1+b) (E Area = I e-beam time) Real dose as exposed dose proximity effect proximity effect software corrections (very expensive) Negative doses could be needed!
22 E-BEAM LITHOGRAPHY WITH A BILAYER PMMA MMA Bilayer spinning e-beam exposition e e Development suspended PMMA mask Metal deposition 1 st evap. 2 nd evap. Lift-off LOR-PMMA Al-Al 2 O 3 -Al tunnel JN Combine materials in good contacts Make good Al 2 O 3 tunnel junctions Easy lift-off even possible with sputtering deposition
23 INORGANIC RESISTS sensitive to high energy diffusion pump oil Polymerisation under e-beam resolution ~ few nm VERY HIGH RESOLUTION (~ few nm) BUT VERY THIN RESIST NO LIFT OFF VERY HIGH DOSES (~ C/cm 2 ) Other inorganic resists: Al 2 O 3, NaCl, AlF 3,
24 ELECTRON BEAM PATTERN GENERATOR WRITING STRATEGY Main deflection coil: position in Field Subfield deflection coil Field Subfield Field + Subfield Higher bandwidth (50MHz) Typical size: Field ~ 300µmx300µm to 1mmx1mm (mechanical displacement from field to field) Subfield ~ 2µmx2µm to 10µmx10µm (1.25nm to 100nm, depends on pixel size )
25 ELECTRON BEAM PATTERN GENERATOR STAGE POSITION WITH LASER INTERFEROMETRY R Asked position e-beam R-M BEF DAC Correction translation and rotation Deflection coil M Measure d position Laser interferometer Measured position Miror (R-M) Real position Sample holder Asked position
26 ELECTRON BEAM PATTERN GENERATOR DEFLECTION COIL CALIBRATION & ABERRATION CORRECTION Signal on secondary e detector for mark detection Can also sweep the mark everywhere in field for aberration correction
27 ELECTRON BEAM PATTERN GENERATOR LASER HEIGHT SENSOR FOR FOCUS CORRECTIONS System reads change in spot position on CCD Laser Diode 1. Laser projects spot onto surface of substrate. Substrate 3. Laser spot reflected onto Detector. 2. Laser spot movement due to change in height of substrate surface. 4. Signals from Dual-diode detector determine distance moved by laser beam.
28 A FEW THINGS TO REMEMBER WHEN DRAWING A CIRCUIT REALIZED WITH E-BEAM LITHOGRAPHY RESOLUTION: very best ~10nm, easy: 50nm PROXIMITY EFFECT: do not forget it when drawing your circuit NOT THAT FAST: exposure time = dose (~1000µC/cm 2 ) * Area / current (1-100nA)
29 III. STEP BY STEP REALIZATION OF A 2DEG CIRCUIT «Quantum dot spectrometer for the distribution function of electrons»
30 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 1. DRAWING THE CIRCUIT 1mm Lithographic steps 1. Alignment marks (Ti-Au) 2. Ω contacts (Ni-Ge-Au-Ni-Au) 3. 2DEG Mesa 30µm 3.5µm 4. Schottky gates (Al) EBPG reads GDSII (generated with L-Edit)
31 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 2. THE GaAs/Ga(Al)As HETEROJUNCTION HETEROJUNCTION ENGINEERING SCHEMATIC OF MBE Si doping 2DEG (~100nm deep) 0.8eV E surface GaAs Al x Ga 1-x As (x 0.33) GaAs E F substrate LPN HIGH e MOBILITY MBE A. Cavanna B. Etienne U. Gennser K. Ouerghi
32 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 3. ALIGNMENT MARKS REFERENCE POSITION AND ORIENTATION 1. Resist coating by spinning (~5000rpm) PMMA diluted in chlorobenzene 2. E-beam exposition & development in MIBK/IPA (1/3) 3. Metal deposition (Ti-Au: 20nm-200nm) by e-gun evaporation & lift-off in trichloroethylene
33 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 4. OHMIC CONTACTS MAKING CONTACT WITH THE 2DEG 1. e-beam lithography 2. Metal deposition: AuGe eutectic T melt =360 C 3. Fast annealing (~450 C for 1mn) Au 200nm Ni 20nm Au 120nm Ge 60nm Ni 10nm [donor]
34 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 4. OHMIC CONTACTS Before baking After baking Mechanism for Ω contacts: strong local Ge doping Typical good Ω contacts 0.5Ω mm at 4.2K
35 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 5. MESA DEFINING THE 2DEG AREAS WITH ETCHING 1. e-beam lithography & Al deposition on 2DEG areas 2. Wet etching with H 3 PO 4 /H 2 O 2 /H 2 O (3:1:80 ~50nm/mn) Alternate etching solution: IBE 3. Removal of Al with NaOH
36 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 6. SCHOTTKY GATES TOP METAL GATES USED TO SHAPE THE CIRCUIT 1. Very small size test dose required on GaAs substrate 1100µC/cm 2 2. e-beam lithography & Al deposition on real sample
37 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 7. BONDING 1. Test gate leakage 2. Connect to sample holder with wire bonding Westbond Extra precautions necessary to avoid burning the Schottky gates
38 STEP BY STEP REALIZATION OF A 2DEG CIRCUIT 8. MEASUREMENT OF ENERGY RELAXATION IN THE QUANTUM HALL REGIME See posters: Carles Altimiras Hélène le Sueur
39 MERCI!
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